NjbW
IPD50R520CP
CoolMOSTM Power Transistor
Package
V*EL;HI<?=JG;E<C ;G?I0 IHM/ Y
V3 BIG7BEL=7I;9>7G=;
V# MIG;C ;: K: IG7I;:
V& ?=>F;7A9JGG;DI97F78?B?IN
V.8<G;;B;7: FB7I?D=0 E& 19EC FB?7DI
V/ J7B!<?;: 799EG: ?D=IE( # "# !
+$
CoolMOS CP is designed for:
V& 7G: 1E<IHL?I9>?D=1+ .1IEFEBE=?;H
V"!+ .$ !<EG*7C F87BB7HI
V.5 + <EG*7C F 7BB7HI.".7D: *!"24
V"19N\_Si //* P
R>M#a`$&_Si *(/,* "
QY&ejb +- `=
Product Summary
Type Package Marking
CJ>/*L/,*=J JA'NI,/, /L/,*J
JA'NI,/,
0 ;K F7=;
Maximum ratings, 7IT\ Y!JDB;HHEI>;GL?H;HF;9?<?;:
Parameter Symbol Conditions Unit
!EDI?DJEJH: G7?D9JGG;DI I>T= Y! ;
T= Y!
.JBH;: : G7?D9JGG;DI
,$ I>&bf^dW T= Y!
K7B7D9>;;D;G=NH?D=B;FJBH; E;M I> V>> 4 +00 _D
K7B7D9>;;D;G=NG;F;I?I?K;t;L
,$&-$ E;L I> V>> 4
K7B7D9>;9JGG;DIG;F;I?I?K;t;L
,$&-$ I;L ;
+ - 1 $ # 2: v)VtGJ==;: D;HH : v)VtV>M 4 P)`d
% 7I;HEJG9;KEBI7=; VAM deSe[U P
!f & O
.EL;G: ?HH?F7I?ED Peae T= Y! Q
- F;G7I?D=7D: HIEG7=;I;C F;G7IJG; T\TdeY u=
*&,/
,&/
/*
v,*
Value
1&+
.&/
+/
v-*
00
V"19N\_Si //* P
R>M#a`$&_Si *(/,* "
QY&ejb +- `=
Product Summary
Type Package Marking
CJ>/*L/,*=J JA'NI,/, /L/,*J
JA'NI,/,
0 ;K F7=;
2.1
2013-07-31
; available in Halogen free mold compounda)
a) non-Halogen free (OPN: IPD50R520CPBT); Halogen free (OPN: IPD50R520CPAT)
IPD50R520CP
Maximum ratings, 7IT\ Y!JDB;HHEI>;GL?H;HF;9?<?;:
Parameter Symbol Conditions Unit
!EDI?DJEJH: ?E: ;<EGL7G: 9JGG;DI IM;
"?E: ;FJBH;9JGG;DI
,$ IM&bf^dW +/
0 ;K;GH;: ?E: ;: v)Vt.$ Vv)Vt+/ P)`d
Parameter Symbol Conditions Unit
min. typ. max.
Thermal characteristics
2>;GC 7BG;H?HI7D9;@JD9I?ED97H; ReZD= ' ' +&3 E)Q
ReZD; ^WSVWV ' ' 0,
1EB: ;G?D=I;C F;G7IJG;
L7K;HEB: ;G?D=EDBN7BBEL;: 7IB;7: H Tda^V
C C ?D
<GEC 97H;<EG H ' ' ,0* u=
Electrical characteristics, 7IT\ Y!JDB;HHEI>;GL?H;HF;9?<?;:
Static characteristics
> [ T ]V ^e
V
V
* P
I
,/* w;
/**
P
Value
T= Y!
-&2
Values
2>;GC 7BG;H?HI7D9;@JD9I?ED
S_T[W`e
0 ;K F7=;
"G7?DHEJG9;8G;7A: ELDKEBI7=;
V
#<L$>MM
V
AM7
*
P
I
>7
,/*
[
;
/** ' ' P
% 7I;I>G;H>EB: KEBI7=; VAM#eZ$ V>M7VAMI> C ,&/ - -&/
6;GE=7I;KEBI7=;: G7?D9JGG;DI I>MM V>M 4 VAM 4
T\ Y! ' ' + w;
V>M 4 VAM 4
T\ Y! ' +* '
% 7I;HEJG9;B;7A7=;9JGG;DI IAMM VAM 4 V>M 4 ' ' +** `;
"G7?DHEJG9;EDHI7I;G;H?HI7D9; R>M#a`$ VAM 4 I>
T\ Y! ' *&.1 *&/, "
VAM 4 I>
T\ Y! ' +&, '
% 7I;G;H?HI7D9; RAf + & OEF;D: G7?D ' ,&, ' "
0 ;K F7=;
2013-07-31
2.1
IPD50R520CP
Parameter Symbol Conditions Unit
min. typ. max.
Dynamic characteristics
'DFJI97F79?I7D9; C[dd ' 02* ' b@
- JIFJI97F79?I7D9; Cadd ' -+ '
# <<;9I?K;EJIFJI97F79?I7D9;;D;G=N
cW^SeWV0$ Ca#Wc$ ' ,3 '
# <<;9I?K;EJIFJI97F79?I7D9;I?C ;
cW^SeWV1$ Ca#ec$ ' 0- '
2JGDED: ;B7NI?C ; tV#a`$ ' -/ ' `d
0 ?H;I?C ; tc' +. '
2JGDE<<: ;B7NI?C ; tV#aXX$ ' 2* '
$ 7BBI?C ; tX' +1 '
% 7I;!>7G=;!>7G79I;G?HI?9H
% 7I;IEHEJG9;9>7G=; QYd ' - ' `=
% 7I;IE: G7?D9>7G=; QYV ' / '
Values
VAM 4 V>M 4
f + & O
V>> 4
VAM 4 I>
RA "
V
>> 4
I
>
VAM 4 V>M 4
IE 4
0 ;K F7=;
% 7I;9>7G=;IEI7B QY' +- +1
% 7I;FB7I;7JKEBI7=; Vb^SeWSf ' /&, ' P
Reverse Diode
"?E: ;<EGL7G: KEBI7=; VM> VAM 4 I@
T\ Y! ' *&3 +&, P
0 ;K;GH;G;9EK;GNI?C ; tcc ' ,.* ' `d
0 ;K;GH;G;9EK;GN9>7G=; Qcc ' +&0 ' w=
.;7AG;K;GH;G;9EK;GN9JGG;DI Icc_ ' +- ' ;
+$( 12" 7D: ( # 1 "
,$. JBH;L?: I>tbB?C ?I;: 8NT\&_Si
-$0 ;F;I?I?K;7K7B7D9>;97JH;H7: : ?I?ED7BFEL;GBEHH;HI>7I97D8;97B9JB7I;: 7H P;P7E;L%f.
0$ Ca#ec$?H7<?M;: 97F79?I7D9;I>7I=?K;HI>;H7C ;9>7G=?D=I?C ;7H CaddL>?B;V>M?HG?H?D=<GEC IE V>MM(
.$ IM>"I>: i)Vt" [ HV>=^[`] 4 VbWS]6V#<L$>MMT\6T\_Si?: ;DI?97BBEL7D: >?=>H?: ;HL?I9>
VL 4 I@7IM
Vi@)Vt [ H
/$ Ca#Wc$?H7<?M;: 97F79?I7D9;I>7I=?K;HI>;H7C ;HIEG;: ;D;G=N7H CaddL>?B;V>M?HG?H?D=<GEC IE V>MM(
>>
** &
>
- 2 &
VAM IE 4
0 ;K F7=;
2.1
2013-07-31
IPD50R520CP
1 Power dissipation 2 Safe operating area
Peae7X#T=$I>7X#V>MT= Y!D7*
F7G7C ;I;Gtb
0
10
20
30
40
50
60
70
0 25 50 75 100 125 150 175
Ptot [W]
TC[°C]
[ H
[ H
[ H
C H
C H
>=
100101102103
10-1
100
101
102
ID[A]
VDS [V]
B?C ?I;: 8NEDHI7I;
cWd[deS`UW
0 ;K F7=;
3 Max. transient thermal impedance 4 Typ. output characteristics
R#eZD=$7X#eb I>7X#V>MT\ Y!
F7G7C ;I;GD=tb)TF7G7C ;I;GVAM
0
10
20
30
40
50
60
70
0 25 50 75 100 125 150 175
Ptot [W]
TC[°C]
[ H
[ H
[ H
C H
C H
>=
100101102103
10-1
100
101
102
ID[A]
VDS [V]
H?D=B;FJBH;
*(*+
*(*,
*(*/
*(+
*(,
*(/
10-5 10-4 10-3 10-2 10-1 100
10-2
10-1
100
101
ZthJC [K/W]
tp[s]
4
4
4
4
4
4
4
4
0
5
10
15
20
0 5 10 15 20
ID[A]
VDS [V]
B?C ?I;: 8NEDHI7I;
cWd[deS`UW
0 ;K F7=;
2.1
2013-07-31
IPD50R520CP
5 Typ. output characteristics 6 Typ. drain-source on-state resistance
I>7X#V>MT\ Y! R>M#a`$7X#I>T\ Y!
F7G7C ;I;GVAM F7G7C ;I;GVAM
4
4
4
4
4
4
4
4
0
2
4
6
8
10
12
0 5 10 15 20 25
ID[A]
VDS [V]
4
4
4
4
4
1,1
1,2
1,3
1,4
1,5
1,6
1,7
1,8
1,9
2
0 2 4 6 8 10 12 14
RDS(on) [ ]
ID[A]
0 ;K F7=;
7 Drain-source on-state resistance 8 Typ. transfer characteristics
R>M#a`$7X#T\I> VAM 4 I>7X#VAMPV>Ml8,lI>lR>M#a`$_Si
F7G7C ;I;GT\
ejb
0,2
0,3
0,4
0,5
0,6
0,7
0,8
0,9
1
1,1
1,2
1,3
1,4
-60 -20 20 60 100 140 180
RDS(on) [ ]
Tj[°C]
Y!
Y!
0
5
10
15
20
25
0246810
ID[A]
VGS [V]
4
4
4
4
4
4
4
4
0
2
4
6
8
10
12
0 5 10 15 20 25
ID[A]
VDS [V]
4
4
4
4
4
1,1
1,2
1,3
1,4
1,5
1,6
1,7
1,8
1,9
2
0 2 4 6 8 10 12 14
RDS(on) [ ]
ID[A]
0 ;K F7=;
2.1
2013-07-31
IPD50R520CP
9 Typ. gate charge 10 Forward characteristics of reverse diode
VAM7X#QYSeWI> FJBH;: I@7X#VM>$
F7G7C ;I;GV>> F7G7C ;I;GT\
Y!
Y! Y!
Y!
10-1
100
101
102
0 0,5 1 1,5 2
IF[A]
VSD [V]
4
4
0
1
2
3
4
5
6
7
8
9
10
0 5 10 15
VGS [V]
Qgate [nC]
0 ;K F7=;
11 Avalanche energy 12 Drain-source breakdown voltage
E;M7X#T\I> V>> 4 V<L#>MM$7X#T\I> C
Y!
Y! Y!
Y!
10-1
100
101
102
0 0,5 1 1,5 2
IF[A]
VSD [V]
4
4
0
1
2
3
4
5
6
7
8
9
10
0 5 10 15
VGS [V]
Qgate [nC]
440
460
480
500
520
540
560
580
-60 -20 20 60 100 140 180
VBR(DSS) [V]
Tj[°C]
0
25
50
75
100
125
150
175
25 75 125 175
EAS [mJ]
Tj[°C]
0 ;K F7=;
2.1
2013-07-31
IPD50R520CP
13 Typ. capacitances 14 Typ. Coss stored energy
C7X#V>MVAM 4 f + & O Eadd=X(V>M)
0
1
2
3
4
0 100 200 300 400 500
Eoss [µJ]
VDS [V]
=add
=cdd
100
101
102
103
104
=[dd
0 100 200 300 400 500
C[pF]
VDS [V]
0 ;K F7=;
0
1
2
3
4
0 100 200 300 400 500
Eoss [µJ]
VDS [V]
=add
=cdd
100
101
102
103
104
=[dd
0 100 200 300 400 500
C[pF]
VDS [V]
0 ;K F7=;
2.1
2013-07-31
IPD50R520CP
Definition of diode switching characteristics
0 ;K F7=; 0 ;K F7=;
2.1
2013-07-31
IPD50R520CP
PG-TO252-3-1/PG-TO252-3-11/PG-TO252-3-21 (D-PAK)
0 ;K F7=; 0 ;K F7=;
2.1
2013-07-31
IPD50R520CP
Published by
Infineon Technologies AG
81726 Munich, Germany
© 2008 Infineon Technologies AG
All Rights Reserved.
Legal Disclaimer
The information given in this document shall in no event be regarded as a guarantee of
conditions or characteristics. With respect to any examples or hints given herein, any typical
values stated herein and/or any information regarding the application of the device,
Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind,
including without limitation, warranties of non-infringement of intellectual property rights
of any third party.
Information
For further information on technology, delivery terms and conditions and prices, please
contact the nearest Infineon Technologies Office
#hhh([`X[`Wa`(Ua_$(
Warnings
Due to technical requirements, components may contain dangerous substances. For information
on the types in question, please contact the nearest Infineon Technologies Office.
Infineon Technologies components may be used in life-support devices or systems only with
the express written approval of Infineon Technologies, if a failure of such components can
reasonably be expected to cause the failure of that life-support device or system or to affect
the safety or effectiveness of that device or system. Life support devices or systems are
i t d d t b i l t d i th h b d t t d/ i t i d t i
0 ;K F7=;
intended to be im
p
lanted in the human bod
y
or to su
pp
ort and/or maintain and sustain
and/or protect human life. If they fail, it is reasonable to assume that the health of the user
or other persons may be endangered.
0 ;K F7=;
2.1
2013-07-31
