SD1224 - Advanced Power Technology

SD1224

Advanced Power Technology reserves the right to change, without notice, the specifications and information contained herein

Visit our website at WWW.ADVANCEDPOWER.COM or contact our factory direct.

DESCRIPTION:

The SD1224 is an epitaxial silicon NPN planar transistor designed

primarily for 28 V FM Class C RF amplifiers utilized in ground station

transmitters. This device utilizes ballasted emitter resistors and

improved metallization systems to achieve optimum load mismatch

capability.

ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C)

Symbol Parameter Value Unit

VCBO Collector-Base Voltage 65 V

VCEO Collector-Emitter Voltage 35 V

VEBO Emitter-Base Voltage 4.0 V

IC Device Current 5.0 A

PDISS Power Dissipation 60 W

TJ Junction Temperature +200 °°C

TSTG Storage Temperature -65 to +150 °°C

THERMAL DATA

RTH(j-c) Junction-Case Thermal Resistance 2.9 °°C/W

FeaturesFeatures

• 175 MHz

• 28 VOLTS

• CLASS C

• COMMON EMITTER

• EFFICIENCY 60% MIN.

• POUT = 40 W MIN.

• GP = 7.6 dB GAIN

RF AND MICROWAVE TRANSISTORS

VHF FM APPLICATIONS

140 COMMERCE DRIVE

MONTGOMERYVILLE, PA

18936-1013

PHONE: (215) 631-9840

FAX: (215) 631-9855

SD1224

Advanced Power Technology reserves the right to change, without notice, the specifications and information contained herein

Visit our website at WWW.ADVANCEDPOWER.COM or contact our factory direct.

ELECTRICAL SPECIFICATIONS (Tcase = 25ELECTRICAL SPECIFICATIONS (Tcase = 25°°C)C)

STATIC Value

Symbol Test Conditions Min. Typ. Max. Units

BVCBO IC = 10 mA IB = 0 mA 65 V

BVCES IC = 200 mA VBE = 0 V 65 V

BVCEO IC = 200 mA IB = 0 mA 35 V

BVEBO IE = 10 mA IC = 0 mA 4.0 V

ICES VCE = 30 V IE = 0 mA 10 mA

ICBO VCB = 30 V IE = 0 mA 1 mA

hFE VCE = 5 V IC = 500 mA 5 200

DYNAMIC Value

Symbol Test Conditions Min. Typ. Max. Units

POUT f = 175 MHz PIN = 7.0 W VCE = 28 V 40 W

GP f = 175 MHz PIN = 7.0 W VCE = 28 V 7.6 dB

ηηC f = 175 MHz PIN = 7.0 W VCE = 28 V 60 %

COB f = 1 MHz VCB = 30 V 65 pF

IMPEDANCE DATAIMPEDANCE DATA

PIN (W) POUT (W) ZIN (ΩΩ) ZCL (ΩΩ)

2.0 28.5 0.85 + j 1.20 3.25 + j 7.05

4.0 43.0 1.02 + j 1.32 4.45 + j 5.40

6.0 53.0 1.01 + j 1.42 5.25 + j 4.42

8.0 60.5 1.05 + j 1.35 5.45 + j 4.12

Test Conditions: VCE = 28 V

f = 175 MHz

SD1224

Advanced Power Technology reserves the right to change, without notice, the specifications and information contained herein

Visit our website at WWW.ADVANCEDPOWER.COM or contact our factory direct.

PACKAGE MECHANICAL DATAPACKAGE MECHANICAL DATA