DNA30E2200FE
Single Diode
High Voltage Standard Rectifier
5 1
Part number
DNA30E2200FE
Backside: isolated
FAV
F
VV1.22
RRM
30
2200
=
V= V
I= A
Features / Ad vantages: Applications: Package:
● Planar passivated chips
● Very low leakage current
● Very low forward voltage drop
● Improved thermal behaviour
● Diode for main rectification
● For single and three phase
bridge configurations
i4-Pac
● Industry convenient outline
● RoHS compliant
● Epoxy meets UL 94V-0
● Soldering pins for PCB mounting
● Backside: DCB ceramic
● Reduced weight
● Advanced power cycling
● Isolation Voltage: V~
3000
IXYS reserves the right to change limits, conditions and dimensions. 20130123cData according to IEC 60747and per semiconductor unless otherwise specified
© 2013 IXYS all rights reserved
DNA30E2200FE
V = V
A²s
A²s
A²s
A²s
Symbol Definition
Ratings
typ. max.
I
R
V
IA
V
F
1.25
R1.35 K/W
R
min.
30
V
RSM
V
40T = 25°C
VJ
T = °C
VJ
mA1.5V = V
R
T = 25°C
VJ
I = A
F
V
T = °C
C
110
P
tot
110 WT = 25°C
C
RK/W
30
2200
max. non-repetitive reverse blocking voltage
reverse current, drain current
forward voltage drop
total power dissipation
Conditions Unit
1.50
T = 25°C
VJ
150
V
F0
V0.83T = °C
VJ
175
r
F
12.8 mΩ
V1.22T = °C
VJ
I = A
F
V
30
1.59
I = A
F
60
I = A
F
60
threshold voltage
slope resistance for power loss calculation only
µA
150
V
RRM
V2200
max. re pe titive rev er se blockin g volt a ge T = 25°C
VJ
IA47
C
J
7
j
unction capacitance V = V700 T = 25°Cf = 1 MHz
RVJ
pF
I
FSM
t = 10 ms; (50 Hz), sine T = 45°C
VJ
max. forward surge current
T = °C
VJ
150
I²t T = 45°C
value for fusing
T = °C150
V = 0 V
R
V = 0 V
R
V = 0 V
V = 0 V
t = 8,3 ms; (60 Hz), sine
t = 10 ms; (50 Hz), sine
t = 8,3 ms; (60 Hz), sine
t = 10 ms; (50 Hz), sine
t = 8,3 ms; (60 Hz), sine
t = 10 ms; (50 Hz), sine
t = 8,3 ms; (60 Hz), sine
VJ
R
VJ
R
T = °C
VJ
175
370
400
495
480
A
A
A
A
315
340
685
665
2200
RMS forward current
F(RMS)
FAV
d =rectangular 0.5
average forward current
thermal resistance junction to case
thJC
thermal resistance case to heatsink
thCH
Rectifier
2300
0.20
IXYS reserves the right to change limits, conditions and dimensions. 20130123cData according to IEC 60747and per semiconductor unless otherwise specified
© 2013 IXYS all rights reserved
DNA30E2200FE
Ratings
IXYS
Date Code
Part No.
Logo
U
Llisted
Product
M
arkin
g
D
N
A
30
E
2200
FE
Part number
Diode
High Voltage Standard Rectifier
(>= 2000V)
Single Diode
i4-Pac (2HV)
=
=
=
DNA30E2200PC TO-263AB (D2Pak) (2) 2200
Current Rating [A]
Reverse Voltage [V]
=
=
=
=
Package
T
VJ
°C
T
stg
°C150
storage temperature -55
Weight g9
Symbol Definition typ. max.min.Conditions
virt ua l j un ctio n temp eratu re
Unit
F
C
N120
mount ing for ce w i th cli p 20
VV
t = 1 second
V
t = 1 minute
isolation voltage
mm
mm
13.8
5.1
d
Spp/App
creepage distance on surface | striking distance through air
d
Spb/Apb
terminal to backside
I
RMS
RMS current 70 A
per terminal
175-55
terminal to terminal
DNA30EM2200PC TO-263AB (D2Pak) (2) 2200
i4-Pac
Similar Part Package Voltage class
DNA30E2200PA TO-220AC (2) 2200
Delivery Mode Quantity Code No.Part Number Marking on ProductOrdering
50/60 Hz, RMS; I ≤ 1 mA
ISOL
DNA30E2200FE 508861Tube 25DNA30E2200FEStandard
2500
3000
ISOL
threshold voltage V0.83
mΩ
V
0 max
R
0 max
slope resistance * 10.2
Equivalent Circuits for Simulation
T =
VJ
IV
0
R
0
Rectifier
175°C
* on die level
IXYS reserves the right to change limits, conditions and dimensions. 20130123cData according to IEC 60747and per semiconductor unless otherwise specified
© 2013 IXYS all rights reserved
DNA30E2200FE
E
W
A
A2
A1
c2x b2
2x b
E1
D1
D2
L1
LD
R
Q
15 e
D3
Die konvexe Form des Substrates ist typ. < 0.05 mm über
der Kunststoffoberfläche der Bauteilunterseite
Theconvexbowof substrate is typ. < 0.05mmover plastic
surface level ofdevice bottomside
min max min max
A 4.83 5.21 0.190 0.205
A1 2.59 3.00 0.102 0.118
A2 1.17 2.16 0.046 0.085
b 1.14 1.40 0.045 0.055
b2 1.47 1.73 0.058 0.068
c 0.51 0.74 0.020 0.029
D 20.80 21.34 0.819 0.840
D1 14.99 15.75 0.590 0.620
D2 1.65 2.03 0.065 0.080
D3 20.30 20.70 0.799 0.815
E 19.56 20.29 0.770 0.799
E1 16.76 17.53 0.660 0.690
e 15.24 BSC 0.600 BSC
L 19.81 21.34 0.780 0.840
L1 2.11 2.59 0.083 0.102
Q 5.33 6.20 0.210 0.244
R2.54 4.57 0.100 0.180
W-0.10 -0.004
Dim. Millimeter Inches
5 1
Outlines i4-Pac
IXYS reserves the right to change limits, conditions and dimensions. 20130123cData according to IEC 60747and per semiconductor unless otherwise specified
© 2013 IXYS all rights reserved
DNA30E2200FE
0.001 0.01 0.1 1
100
150
200
250
300
23456789011
10
2
10
3
0.5 1.0 1.5
0
20
40
60
0102030
0
10
20
30
40
50
1 10 100 1000 10000
0.0
0.4
0.8
1.2
1.6
0 50 100 150 200
0
20
40
60
80
I
F
[A]
V
F
[V]
I
FSM
[A]
t[s]
I
2
t
[A
2
s]
t[ms]
P
tot
[W]
I
F(AV)M
T]A[
amb
[°C]
I
F(AV)M
[A]
T
C
[°C]
Z
thJC
[K/W]
Fig. 1 Forward current versus
voltagedropperdiode
Fig. 2 Surge overload current Fig. 3 I
2
t versus time per diode
Fig. 4 Power dissipation versus direct output current & ambient temperature Fig. 5 Max. forward current versus
case temperature
Fig. 6 Transient thermal impedance junction to case
t[ms]
Constants for Z
thJC
calculation:
iR
thi
(K/W) t
i
(s)
1 0.03 0.0003
2 0.072 0.0065
3 0.122 0.083
4 0.736 0.152
5 0.39 0.4
0 25 50 75 100 125 150 175 200
T
VJ
= 150°C
T
VJ
= 125°C
T
VJ
= 25°C
T
VJ
=45°C
50 Hz, 80% V
RRM
T
VJ
= 45°C
V
R
=0 V
R
thKA
=
0.6 K/W
0.8 K/W
1.0 K/W
2.0 K/W
4.0 K/W
8.0 K/W
dc =
1
0.5
0.4
0.33
0.17
0.08
dc =
1
0.5
0.4
0.33
0.17
0.08
T
VJ
= 150°C T
VJ
= 150°C
Rectifier
IXYS reserves the right to change limits, conditions and dimensions. 20130123cData according to IEC 60747and per semiconductor unless otherwise specified
© 2013 IXYS all rights reserved
