TC74HC00AP/AF/AFN TOSHIBA CMOS Digital Integrated Circuit Silicon Monolithic TC74HC00AP,TC74HC00AF,TC74HC00AFN Quad 2-Input NAND Gate The TC74HC00A is a high speed CMOS 2-INPUT NAND GATE fabricated with silicon gate C2MOS technology. It achieves the high speed operation similar to equivalent LSTTL while maintaining the CMOS low power dissipation. The internal circuit is composed of 3 stages including buffer output, which provide high noise immunity and stable output. All inputs are equipped with protection circuits against static discharge or transient excess voltage. Note: xxxFN (JEDEC SOP) is not available in Japan. TC74HC00AP Features TC74HC00AF * High speed: tpd = 6 ns (typ.) at VCC = 5 V * Low power dissipation: ICC = 1 A (max) at Ta = 25C * High noise immunity: VNIH = VNIL = 28% VCC (min) * Output drive capability: 10 LSTTL loads * * Symmetrical output impedance: |IOH| = IOL = 4 mA (min) tpHL Balanced propagation delays: tpLH - * Wide operating voltage range: VCC (opr) = 2 to 6 V * Pin and function compatible with 74LS00 TC74HC00AFN Pin Assignment Weight DIP14-P-300-2.54 SOP14-P-300-1.27A SOL14-P-150-1.27 : 0.96 g (typ.) : 0.18 g (typ.) : 0.12 g (typ.) IEC Logic Symbol 1 2007-10-01 TC74HC00AP/AF/AFN Truth Table A B Y L L H L H H H L H H H L Absolute Maximum Ratings (Note 1) Characteristics Symbol Rating Unit Supply voltage range VCC -0.5 to 7 V DC input voltage VIN -0.5 to VCC + 0.5 V DC output voltage VOUT -0.5 to VCC + 0.5 V Input diode current IIK 20 mA Output diode current IOK 20 mA DC output current IOUT 25 mA DC VCC/ground current ICC 50 mA Power dissipation PD 500 (DIP) (Note 2)/180 (SOP) mW Storage temperature Tstg -65 to 150 C Note 1: Exceeding any of the absolute maximum ratings, even briefly, lead to deterioration in IC performance or even destruction. Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings and the operating ranges. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook ("Handling Precautions"/"Derating Concept and Methods") and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Note 2: 500 mW in the range of Ta = -40 to 65C. From Ta = 65 to 85C a derating factor of -10 mW/C shall be applied until 300 mW. Operating Ranges (Note) Characteristics Symbol Rating Unit Supply voltage VCC 2 to 6 V Input voltage VIN 0 to VCC V VOUT 0 to VCC V Topr -40 to 85 C Output voltage Operating temperature 0 to 1000 (VCC = 2.0 V) Input rise and fall time tr, tf 0 to 500 (VCC = 4.5 V) ns 0 to 400 (VCC = 6.0 V) Note: The operating ranges must be maintained to ensure the normal operation of the device. Unused inputs must be tied to either VCC or GND. 2 2007-10-01 TC74HC00AP/AF/AFN Electrical Characteristics DC Characteristics Characteristics High-level input voltage Low-level input voltage VCC (V) Min Typ. Max Min Max 2.0 1.50 1.50 4.5 3.15 3.15 6.0 4.20 4.20 2.0 0.50 0.50 4.5 1.35 1.35 6.0 1.80 1.80 2.0 1.9 2.0 1.9 4.5 4.4 4.5 4.4 6.0 5.9 6.0 5.9 IOH = -4 mA 4.5 4.18 4.31 4.13 IOH = -5.2 mA 6.0 5.68 5.80 5.63 2.0 0.0 0.1 0.1 4.5 0.0 0.1 0.1 6.0 0.0 0.1 0.1 IOL = 4 mA 4.5 0.17 0.26 0.33 IOL = 5.2 mA 6.0 0.18 0.26 0.33 VIH VIL IOH = -20 A High-level output voltage VOH VIN = VIH or VIL IOL = 20 A Low-level output voltage VOL Ta = -40 to 85C Ta = 25C Test Condition Symbol VIN = VIH or VIL Unit V V V V Input leakage current IIN VIN = VCC or GND 6.0 0.1 1.0 A Quiescent supply current ICC VIN = VCC or GND 6.0 1.0 10.0 A Test Condition Min Typ. Max Unit 4 8 ns 6 12 ns AC Characteristics (CL = 15 pF, VCC = 5 V, Ta = 25C, input: tr = tf = 6 ns) Characteristics Output transition time Propagation delay time Symbol tTLH tTHL tpLH tpHL 3 2007-10-01 TC74HC00AP/AF/AFN AC Characteristics (CL = 50 pF, input: tr = tf = 6 ns) Characteristics Output transition time Propagation delay time Symbol tTLH tTHL tpLH tpHL Input capacitance CIN Power dissipation capacitance CPD Note: (Note) Ta = -40 to 85C Ta = 25C Test Condition Unit VCC (V) Min Typ. Max Min Max 2.0 25 75 95 4.5 7 15 19 6.0 6 13 16 2.0 27 75 95 4.5 9 15 19 6.0 8 13 16 5 10 10 pF 20 pF ns ns CPD is defined as the value of the internal equivalent capacitance which is calculated from the operating current consumption without load. Average operating current can be obtained by the equation: ICC (opr) = CPDVCCfIN + ICC/4 (per gate) 4 2007-10-01 TC74HC00AP/AF/AFN Package Dimensions Weight: 0.96 g (typ.) 5 2007-10-01 TC74HC00AP/AF/AFN Package Dimensions Weight: 0.18 g (typ.) 6 2007-10-01 TC74HC00AP/AF/AFN Package Dimensions (Note) Note: This package is not available in Japan. Weight: 0.12 g (typ.) 7 2007-10-01 TC74HC00AP/AF/AFN RESTRICTIONS ON PRODUCT USE * Toshiba Corporation, and its subsidiaries and affiliates (collectively "TOSHIBA"), reserve the right to make changes to the information in this document, and related hardware, software and systems (collectively "Product") without notice. * This document and any information herein may not be reproduced without prior written permission from TOSHIBA. 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