MMBT4401LT3G - ON SEMICONDUCTOR

October, 2011 − Rev. 10

1Publication Order Number:

MMBT4401LT1/D

MMBT4401L, SMMBT4401L

Switching Transistor

NPN Silicon

Features

•These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS

Compliant

•AEC−Q101 Qualified and PPAP Capable

•S Prefix for Automotive and Other Applications Requiring Unique

Site and Control Change Requirements

MAXIMUM RATINGS

Rating Symbol Value Unit

Collector−Emitter Voltage VCEO 40 Vdc

Collector−Base Voltage VCBO 60 Vdc

Emitter−Base Voltage VEBO 6.0 Vdc

Collector Current − Continuous IC600 mAdc

Collector Current − Peak ICM 900 mAdc

THERMAL CHARACTERISTICS

Characteristic Symbol Max Unit

Total Device Dissipation FR−5 Board

(Note 1) @TA = 25°C

Derate above 25°C

PD225

1.8

mW/°C

Thermal Resistance, Junction−to−Ambient RqJA 556 °C/W

Total Device Dissipation Alumina

Substrate (Note 2) @TA = 25°C

Derate above 25°C

PD300

2.4

mW/°C

Thermal Resistance, Junction−to−Ambient RqJA 417 °C/W

Junction and Storage Temperature TJ, Tstg −55 to +150 °C

Stresses exceeding Maximum Ratings may damage the device. Maximum

Ratings are stress ratings only. Functional operation above the Recommended

Operating Conditions is not implied. Extended exposure to stresses above the

Recommended Operating Conditions may affect device reliability.

*Transient pulses must not cause the junction temperature to be exceeded.

1. FR−5 = 1.0  0.75  0.062 in.

2. Alumina = 0.4  0.3  0.024 in. 99.5% alumina.

SOT−23 (TO−236)

CASE 318

STYLE 6

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COLLECTOR

BASE

EMITTER

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*Date Code orientation and/or overbar may

vary depending upon manufacturing location.

2X M G

2X = Specific Device Code

M = Date Code*

G= Pb−Free Package

(Note: Microdot may be in either location)

MARKING DIAGRAM

Device Package Shipping†

ORDERING INFORMATION

MMBT4401LT3G SOT−23

(Pb−Free)

†For information on tape and reel specifications,

including part orientation and tape sizes, please

refer to our Tape and Reel Packaging Specifications

Brochure, BRD8011/D.

MMBT4401LT1G

SMMBT4401LT1G

SOT−23

(Pb−Free)

3000 / Tape &

Reel

10,000 / Tape &

Reel

MMBT4401L, SMMBT4401L

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ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)

Characteristic Symbol Min Max Unit

OFF CHARACTERISTICS

Collector−Emitter Breakdown Voltage (Note 3) (IC = 1.0 mAdc, IB = 0) V(BR)CEO 40 −Vdc

Collector−Base Breakdown Voltage (IC = 0.1 mAdc, IE = 0) V(BR)CBO 60 −Vdc

Emitter−Base Breakdown Voltage (IE = 0.1 mAdc, IC = 0) V(BR)EBO 6.0 −Vdc

Base Cutoff Current (VCE = 35 Vdc, VEB = 0.4 Vdc) IBEV −0.1 mAdc

Collector Cutoff Current (VCE = 35 Vdc, VEB = 0.4 Vdc) ICEX −0.1 mAdc

ON CHARACTERISTICS (Note 3)

DC Current Gain

(IC = 0.1 mAdc, VCE = 1.0 Vdc)

(IC = 1.0 mAdc, VCE = 1.0 Vdc)

(IC = 10 mAdc, VCE = 1.0 Vdc)

(IC = 150 mAdc, VCE = 1.0 Vdc)

(IC = 500 mAdc, VCE = 2.0 Vdc)

hFE 20

100

−

300

−

Collector−Emitter Saturation Voltage

(IC = 150 mAdc, IB = 15 mAdc)

(IC = 500 mAdc, IB = 50 mAdc)

VCE(sat)

−

0.4

0.75

Vdc

Base −Emitter Saturation Voltage

(IC = 150 mAdc, IB = 15 mAdc)

(IC = 500 mAdc, IB = 50 mAdc)

VBE(sat) 0.75

−

0.95

1.2

Vdc

SMALL−SIGNAL CHARACTERISTICS

Current−Gain − Bandwidth Product (IC = 20 mAdc, VCE = 10 Vdc, f = 100 MHz) fT250 −MHz

Collector−Base Capacitance (VCB = 5.0 Vdc, IE = 0, f = 1.0 MHz) Ccb −6.5 pF

Emitter−Base Capacitance (VEB = 0.5 Vdc, IC = 0, f = 1.0 MHz) Ceb −30 pF

Input Impedance (IC = 1.0 mAdc, VCE = 10 Vdc, f = 1.0 kHz) hie 1.0 15 kW

Voltage Feedback Ratio (IC = 1.0 mAdc, VCE = 10 Vdc, f = 1.0 kHz) hre 0.1 8.0 X 10−4

Small−Signal Current Gain (IC = 1.0 mAdc, VCE = 10 Vdc, f = 1.0 kHz) hfe 40 500 −

Output Admittance (IC = 1.0 mAdc, VCE = 10 Vdc, f = 1.0 kHz) hoe 1.0 30 mmhos

SWITCHING CHARACTERISTICS

Delay Time (VCC = 30 Vdc, VEB = 2.0 Vdc,

IC = 150 mAdc, IB1 = 15 mAdc)

td−15

Rise Time tr−20

Storage Time (VCC = 30 Vdc, IC = 150 mAdc,

IB1 = IB2 = 15 mAdc)

ts−225

Fall Time tf−30

3. Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle ≤ 2.0%.

Figure 1. Turn−On Time Figure 2. Turn−Off Time

SWITCHING TIME EQUIVALENT TEST CIRCUITS

Scope rise time < 4.0 ns

*Total shunt capacitance of test jig connectors, and oscilloscope

+16 V

-2.0 V < 2.0 ns

1.0 to 100 ms,

DUTY CYCLE ≈ 2.0%

1.0 kW

+30 V

200 W

CS* < 10 pF

+16 V

-14 V

< 20 ns

1.0 to 100 ms,

DUTY CYCLE ≈ 2.0%

1.0 kW

+30 V

200 W

CS* < 10 pF

-4.0 V

MMBT4401L, SMMBT4401L

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Figure 3. Charge Data

IC, COLLECTOR CURRENT (mA)

Q, CHARGE (nC)

2.0

3.0

5.0

7.0

1.0

10 20 50 70 100 200

0.1 300 500

0.7

0.5

VCC = 30 V

IC/IB = 10

Figure 4. Turn−On Time

IC, COLLECTOR CURRENT (mA)

5.0

7.0

Figure 5. Rise and Fall Times

IC, COLLECTOR CURRENT (mA)

Figure 6. Storage Time

IC, COLLECTOR CURRENT (mA)

Figure 7. Fall Time

IC, COLLECTOR CURRENT (mA)

100

5.0

7.0

25°C 100°C

TRANSIENT CHARACTERISTICS

0.3

0.2

ts, STORAGE TIME (ns)

′t, TIME (ns)

t, TIME (ns)tf, FALL TIME (ns)

100

10 20 50 70 100 200 300 500

IC/IB = 10

tr @ VCC = 30 V

tr @ VCC = 10 V

td @ VEB = 2.0 V

td @ VEB = 0 20

5.0

7.0

100

10 20 50 70 100 200 300 500

VCC = 30 V

IC/IB = 10

10 20 50 70 100 200 300 500

100

200

300

10 20 50 70 100 200 300 500

ts′ = ts - 1/8 tf

IB1 = IB2

IC/IB = 10 to 20

VCC = 30 V

IB1 = IB2

IC/IB = 20

IC/IB = 10

MMBT4401L, SMMBT4401L

http://onsemi.com

6.0

8.0

4.0

2.0

0.1 2.0 5.0 10 20 50

1.00.50.20.01 0.02 0.05 100

Figure 8. Frequency Effects

f, FREQUENCY (kHz)

SMALL−SIGNAL CHARACTERISTICS NOISE FIGURE

VCE = 10 Vdc, TA = 25°C; Bandwidth = 1.0 Hz

NF, NOISE FIGURE (dB)

IC = 1.0 mA, RS = 150 W

IC = 500 mA, RS = 200 W

IC = 100 mA, RS = 2.0 kW

IC = 50 mA, RS = 4.0 kW

RS = OPTIMUM

RS = SOURCE

RS = RESISTANCE

100k50 100 200 500 1.0k 2.0k 5.0k 10k 20k 50k

6.0

8.0

4.0

2.0

NF, NOISE FIGURE (dB)

Figure 9. Source Resistance Effects

RS, SOURCE RESISTANCE (OHMS)

f = 1.0 kHz

IC = 50 mA

IC = 100 mA

IC = 500 mA

IC = 1.0 mA

h PARAMETERS

VCE = 10 Vdc, f = 1.0 kHz, TA = 25°C

This group of graphs illustrates the relationship between hfe and other “h” parameters for this series of transistors. To obtain

these curves, a high−gain and a low−gain unit were selected from the MMBT4401LT1 lines, and the same units were used to

develop the correspondingly numbered curves on each graph.

hie, INPUT IMPEDANCE (OHMS)

Figure 10. Input Impedance

IC, COLLECTOR CURRENT (mA)

50k

500

20k

10k

5.0k

2.0k

1.0k

0.1 0.2 0.5 0.7 1.0 2.0 3.0 10

0.3 5.0 7.0

Figure 11. Voltage Feedback Ratio

IC, COLLECTOR CURRENT (mA)

0.1 0.2 0.5 0.7 1.0 2.0 3.0 10

0.3

0.2

Figure 12. Output Admittance

IC, COLLECTOR CURRENT (mA)

100

1.0

5.0 7.0

5.0

2.0

7.0

5.0

3.0

2.0

1.0

0.7

0.5

0.3

h , OUTPUT ADMITTANCE ( mhos)

h , VOLTAGE FEEDBACK RATIO (X 10 )

-4

0.1 0.2 0.5 0.7 1.0 2.0 3.0 10

0.3 5.0 7.0

MMBT4401LT1 UNIT 1

MMBT4401LT1 UNIT 2

MMBT4401LT1 UNIT 1

MMBT4401LT1 UNIT 2

MMBT4401LT1 UNIT 1

MMBT4401LT1 UNIT 2

MMBT4401L, SMMBT4401L

http://onsemi.com

STATIC CHARACTERISTICS

-55°C

Figure 13. DC Current Gain

IC, COLLECTOR CURRENT (A)

Figure 14. Collector Saturation Region

IB, BASE CURRENT (mA)

0.4

0.6

0.8

1.2

0.2

V , COLLECTOR-EMITTER VOLTAGE (VOLTS)

IC = 1.0 mA

0.001

10 mA 100 mA 500 mA

250

300

500

0.01

h , DC CURRENT GAIN

0.1

TJ = 150°C

400

25°C

VCE = 5.0 V

VCE = 2.0 V

VCE = 1.0 V

Figure 15. Collector−Emitter Saturation

Voltage vs. Collector Current

IC, COLLECTOR CURRENT (A)

0.15

0.20

0.30

0.35

0.05

Figure 16. Temperature Coefficients

IC, COLLECTOR CURRENT (mA)

VCE(sat), COLLECTOR-EMITTER SATURATION VOLTAGE (V)

0.01 0.1

-0.5

+0.5

-1.0

-1.5

-2.0

150°C

qVC for VCE(sat)

qVB for VBE

0.0001

COEFFICIENT (mV/ C)°

-2.5 1.0 2.0 5.0 10 20 50 100 500

200

0.1 0.2 0.5

0.01 0.1

1.0

110

300 mA

100

150

200

350

450

-55°C

0.001

25°C

0.10

0.25

IC/IB = 10

100

MMBT4401L, SMMBT4401L

http://onsemi.com

STATIC CHARACTERISTICS

Figure 17. Base−Emitter Saturation Voltage vs.

Collector Current

Figure 18. Base−Emitter Turn On Voltage vs.

Collector Current

IC, COLLECTOR CURRENT (A) IC, COLLECTOR CURRENT (A)

10.10.010.0010.0001

0.3

0.4

0.5

0.6

0.7

0.9

1.0

1.1

10.10.010.0010.0001

0.3

0.4

0.5

0.6

0.7

0.9

1.0

VBE(sat), BASE−EMITTER SATURA-

TION VOLTAGE (V)

VBE(on), BASE−EMITTER TURN ON

VOLTAGE (V)

0.8

150°C

25°C

−55°C

0.8

150°C

25°C

−55°C

IC/IB = 10 VCE = 2.0 V

Figure 19. Input Capacitance vs. Emitter Base

Voltage

Figure 20. Output Capacitance vs. Collector

Base Voltage

Veb, EMITTER BASE VOLTAGE (V) Vcb, COLLECTOR BASE VOLTAGE (V)

63210

503025100

1.5

2.5

3.5

4.5

6.5

8.5

Cibo, INPUT CAPACITANCE (pF)

Cobo, OUTPUT CAPACITANCE (pF)

5.5

4 5 5 1520 354045

7.5

Figure 21. Safe Operating Area Figure 22. Current−Gain−Bandwidth Product

VCE, COLLECTOR EMITTER VOLTAGE (V) IC, COLLECTOR CURRENT (mA)

100101

0.001

0.01

100.1

1000

IC, COLLECTOR CURRENT (A)

, CURRENT−GAIN−BANDWIDTH (MHz)

0.1

100

1 100 1000

10 msec

1 sec

VCE = 1.0 V

TA = 25°C

MMBT4401L, SMMBT4401L

http://onsemi.com

PACKAGE DIMENSIONS

SOT−23 (TO−236)

CASE 318−08

ISSUE AP

ǒmm

inchesǓ

SCALE 10:1

0.8

0.031

0.9

0.035

0.95

0.037

0.95

0.037

2.0

0.079

SOLDERING FOOTPRINT*

*For additional information on our Pb−Free strategy and soldering

details, please download the ON Semiconductor Soldering and

Mounting Techniques Reference Manual, SOLDERRM/D.

STYLE 6:

PIN 1. BASE

2. EMITTER

3. COLLECTOR

NOTES:

1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M,

1982.

2. CONTROLLING DIMENSION: INCH.

3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH

THICKNESS. MINIMUM LEAD THICKNESS IS THE MINIMUM

THICKNESS OF BASE MATERIAL.

4. DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH,

PROTRUSIONS, OR GATE BURRS.

VIEW C

0.25

SEE VIEW C

DIM

MIN NOM MAX MIN

MILLIMETERS

0.89 1.00 1.11 0.035

INCHES

A1 0.01 0.06 0.10 0.001

b0.37 0.44 0.50 0.015

c0.09 0.13 0.18 0.003

D2.80 2.90 3.04 0.110

E1.20 1.30 1.40 0.047

e1.78 1.90 2.04 0.070

L0.10 0.20 0.30 0.004

0.040 0.044

0.002 0.004

0.018 0.020

0.005 0.007

0.114 0.120

0.051 0.055

0.075 0.081

0.008 0.012

NOM MAX

2.10 2.40 2.64 0.083 0.094 0.104

0.35 0.54 0.69 0.014 0.021 0.029

0−−− 10 0 −−− 10

q°°°°

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to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability

arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.

“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All

operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights

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MMBT4401LT1/D

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