IHW40T120
Soft Switching Series
Power Semiconductors 1 Rev. 2.3 Sep 08
Low Loss DuoPack : IGBT in TrenchStop® and Fieldstop technology
with soft, fast recovery anti-parallel EmCon HE diode
• Short circuit withstand time – 10µs
• Designed for :
- Soft Switching Applications
- Induction Heating
• TrenchStop® and Fieldstop technology for 1200 V applications
offers :
- very tight parameter distribution
- high ruggedness, temperature stable behavior
- easy parallel switching capability due to positive
temperature coefficient in VCE(sat)
• Very soft, fast recovery anti-parallel EmCon™ HE diode
• Low EMI
• Qualified according to JEDEC1 for target applications
• Application specific optimisation of inverse diode
• •Pb-free lead plating; RoHS compliant
Type VCE I
C VCE(sat),Tj=25°C Tj,max Marking Package
IHW40T120 1200V 40A 1.8V 150°C H40T120 PG-TO247-3
Maximum Ratings
Parameter Symbol Value Unit
Collector-emitter voltage VCE 1200 V
DC collector current
TC = 25°C
TC = 100°C
IC
75
40
Pulsed collector current, tp limited by Tjmax ICpuls 105
Turn off safe operating area
VCE ≤ 1200V, Tj ≤ 150°C
- 105
Diode forward current
TC = 25°C
TC = 100°C
IF
31
19.8
Diode pulsed current, tp limited by Tjmax IFpuls 47
A
Diode surge non repetitive current, tp limited by Tjmax
TC = 25°C, tp = 10ms, sine halfwave
TC = 25°C, tp ≤ 2.5µs, sine halfwave
TC = 100°C, tp ≤ 2.5µs, sine halfwave
IFSM
78
200
160
A
Gate-emitter voltage VGE ±20 V
Short circuit withstand time2)
VGE = 15V, VCC ≤ 1200V, Tj ≤ 150°C
tSC 10
µs
Power dissipation, TC = 25°C Ptot 270 W
Operating junction temperature Tj -40...+150
Storage temperature Tstg -55...+150
°C
1 J-STD-020 and JESD-022
2) Allowed number of short circuits: <1000; time between short circuits: >1s.
G
C
E
PG-TO-247-3
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IHW40T120
Soft Switching Series
Power Semiconductors 2 Rev. 2.3 Sep 08
Soldering temperature, 1.6mm (0.063 in.) from case for 10s - 260
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IHW40T120
Soft Switching Series
Power Semiconductors 3 Rev. 2.3 Sep 08
Thermal Resistance
Parameter Symbol Conditions Max. Value Unit
Characteristic
IGBT thermal resistance,
junction – case
RthJC 0.45
Diode thermal resistance,
junction – case
RthJCD 1.1
Thermal resistance,
junction – ambient
RthJA 40
K/W
Electrical Characteristic, at Tj = 25 °C, unless otherwise specified
Value
Parameter Symbol Conditions
min. Typ. max.
Unit
Static Characteristic
Collector-emitter breakdown voltage V(BR)CES VGE=0V, IC=1.5mA 1200 - -
Collector-emitter saturation voltage VCE(sat) VGE = 15V, IC=40A
Tj=25°C
Tj=125°C
Tj=150°C
-
-
-
1.8
2.1
2.3
2.3
-
-
Diode forward voltage
VF VGE=0V, IF=18A
Tj=25°C
Tj=125°C
Tj=150°C
1.65
1.7
1.7
2.15
Gate-emitter threshold voltage VGE(th) IC=1.5mA,VCE=VGE 5.0 5.8 6.5
V
Zero gate voltage collector current
ICES VCE=1200V,
VGE=0V
Tj=25°C
Tj=150°C
-
-
-
-
0.4
4.0
mA
Gate-emitter leakage current IGES VCE=0V,VGE=20V - - 600 nA
Transconductance gfs VCE=20V, IC=40A - 21 - S
Integrated gate resistor RGint 6
Dynamic Characteristic
Input capacitance Ciss - 2500 -
Output capacitance Coss - 130 -
Reverse transfer capacitance Crss
VCE=25V,
VGE=0V,
f=1MHz - 110 -
pF
Gate charge QGate VCC=960V, IC=40A
VGE=15V
- 203 - nC
Internal emitter inductance
measured 5mm (0.197 in.) from case
LE - 13 - nH
Short circuit collector current1) IC(SC) VGE=15V,tSC≤10µs
VCC = 600V,
Tj = 25°C
- 210 - A
1) Allowed number of short circuits: <1000; time between short circuits: >1s.
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IHW40T120
Soft Switching Series
Power Semiconductors 4 Rev. 2.3 Sep 08
Switching Characteristic, Inductive Load, at Tj=25 °C
Value
Parameter Symbol Conditions
min. typ. max.
Unit
IGBT Characteristic
Turn-on delay time td(on) - 48 -
Rise time tr - 34 -
Turn-off delay time td(off) - 480 -
Fall time tf - 70 -
ns
Turn-on energy Eon - 3.3 -
Turn-off energy Eoff - 3.2 -
Total switching energy Ets
Tj=25°C,
VCC=600V,IC=40A,
VGE=0/15V,
RG=15Ω,
L
σ
2)=180nH,
C
σ
2)=39pF
Energy losses include
“tail” and diode
reverse recovery. - 6.5 -
mJ
Anti-Parallel Diode Characteristic
Diode reverse recovery time trr - 195 - ns
Diode reverse recovery charge Qrr - 1880 - nC
Diode peak reverse recovery current Irrm
Tj=25°C,
VR=800V, IF=18A,
diF/dt=800A/µs - 20.2 - A
Switching Characteristic, Inductive Load, at Tj=150 °C
Value
Parameter Symbol Conditions
min. typ. max.
Unit
IGBT Characteristic
Turn-on delay time td(on) - 52 -
Rise time tr - 40 -
Turn-off delay time td(off) - 580 -
Fall time tf - 120 -
ns
Turn-on energy Eon - 5.0 -
Turn-off energy Eoff - 5.4 -
Total switching energy Ets
Tj=150°C
VCC=600V,IC=40A,
VGE=0/15V,
RG= 15Ω,
L
σ
1)=180nH,
C
σ
1)=39pF
Energy losses include
“tail” and diode
reverse recovery. - 10.4 -
mJ
Anti-Parallel Diode Characteristic
Diode reverse recovery time trr - 300 ns
Diode reverse recovery charge Qrr - 3540 nC
Diode peak reverse recovery current Irrm
Tj=150°C
VR=800V, IF=18A,
diF/dt=800A/µs - 25.3 A
2) Leakage inductance L
σ
and Stray capacity Cσ due to dynamic test circuit in Figure E.
1) Leakage inductance L
σ
and Stray capacity Cσ due to dynamic test circuit in Figure E.
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IHW40T120
Soft Switching Series
Power Semiconductors 5 Rev. 2.3 Sep 08
IC, COLLECTOR CURRENT
10Hz 100Hz 1kHz 10kHz 100kHz
0A
20A
40A
60A
80A
1
00A
TC=110°C
TC=80°C
IC, COLLECTOR CURRENT
1V 10V 100V 1000V
0,1A
1A
10A
100A
DC
10µs
tp=3µs
50µs
500µs
20ms
150µs
f, SWITCHING FREQUENCY VCE, COLLECTOR-EMITTER VOLTAGE
Figure 1. Collector current as a function of
switching frequency
(Tj ≤ 150°C, D = 0.5, VCE = 600V,
VGE = 0/+15V, RG = 15Ω)
Figure 2. Safe operating area
(D = 0, TC = 25°C,
Tj ≤150°C;VGE=15V)
Ptot, POWER DISSIPATION
25°C 50°C 75°C 100°C 125°C
0W
50W
100W
150W
2
00W
2
50W
IC, COLLECTOR CURRENT
25°C 75°C 125°C
0A
10A
20A
30A
40A
50A
60A
70A
TC, CASE TEMPERATURE TC, CASE TEMPERATURE
Figure 3. Power dissipation as a function of
case temperature
(Tj ≤ 150°C)
Figure 4. Collector current as a function of
case temperature
(VGE ≥ 15V, Tj ≤ 150°C)
Ic
Ic
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IHW40T120
Soft Switching Series
Power Semiconductors 6 Rev. 2.3 Sep 08
IC, COLLECTOR CURRENT
0V 1V 2V 3V 4V 5V 6V
0A
10A
20A
30A
40A
50A
60A
70A
80A
90A
1
00A
15V
7V
9V
11V
13V
VGE=17V
IC, COLLECTOR CURRENT
0V 1V 2V 3V 4V 5V 6V
0A
10A
20A
30A
40A
50A
60A
70A
80A
90A
100A
15V
7V
9V
11V
13V
VGE=17V
VCE, COLLECTOR-EMITTER VOLTAGE VCE, COLLECTOR-EMITTER VOLTAGE
Figure 5. Typical output characteristic
(Tj = 25°C)
Figure 6. Typical output characteristic
(Tj = 150°C)
IC, COLLECTOR CURRENT
0V 2V 4V 6V 8V 10V 12V
0A
10A
20A
30A
40A
50A
60A
70A
80A
90A
100A
25°C
TJ=150°C
VCE(sat), COLLECTOR-EMITT SATURATION VOLTAGE
-50°C 0°C 50°C 100°C
0,0V
0,5V
1,0V
1,5V
2,0V
2,5V
3,0V
3,5V
IC=40A
IC=80A
IC=25A
IC=10A
VGE, GATE-EMITTER VOLTAGE TJ, JUNCTION TEMPERATURE
Figure 7. Typical transfer characteristic
(VCE=20V)
Figure 8. Typical collector-emitter
saturation voltage as a function of
junction temperature
(VGE = 15V)
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IHW40T120
Soft Switching Series
Power Semiconductors 7 Rev. 2.3 Sep 08
t, SWITCHING TIMES
0A 20A 40A 60A
1ns
10ns
100ns
tr
td(on)
tf
td(off)
t, SWITCHING TIMES
5Ω 15Ω 25Ω 35Ω 45Ω
1 ns
10 ns
100 ns
1000 ns
tf
tr
td(off)
td(on)
IC, COLLECTOR CURRENT RG, GATE RESISTOR
Figure 9. Typical switching times as a
function of collector current
(inductive load, TJ=150°C,
VCE=600V, VGE=0/15V, RG=15,
Dynamic test circuit in Figure E)
Figure 10. Typical switching times as a
function of gate resistor
(inductive load, TJ=150°C,
VCE=600V, VGE=0/15V, IC=40A,
Dynamic test circuit in Figure E)
t, SWITCHING TIMES
0°C 50°C 100°C 150°C
10ns
100ns
tr
tf
td(on)
td(off)
VGE(th), GATE-EMITT TRSHOLD VOLTAGE
-50°C 0°C 50°C 100°C 150°C
0V
1V
2V
3V
4V
5V
6V
7V
min.
typ.
max.
TJ, JUNCTION TEMPERATURE TJ, JUNCTION TEMPERATURE
Figure 11. Typical switching times as a
function of junction temperature
(inductive load, VCE=600V,
VGE=0/15V, IC=40A, RG=15,
Dynamic test circuit in Figure E)
Figure 12. Gate-emitter threshold voltage as
a function of junction temperature
(IC = 1.5mA)
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IHW40T120
Soft Switching Series
Power Semiconductors 8 Rev. 2.3 Sep 08
E, SWITCHING ENERGY LOSSES
10A 20A 30A 40A 50A 60A 70A
0,0mJ
5,0mJ
1
0,0mJ
1
5,0mJ
2
0,0mJ
2
5,0mJ
Ets*
Eoff
*) Eon and Etsinclude losses
due to diode recovery
Eon*
E, SWITCHING ENERGY LOSSES
5Ω 15Ω 25Ω 35Ω
0 mJ
5 mJ
10 mJ
15 mJ Ets*
Eon*
*) Eon and Ets include losses
due to diode recovery
Eoff
IC, COLLECTOR CURRENT RG, GATE RESISTOR
Figure 13. Typical switching energy losses
as a function of collector current
(inductive load, TJ=150°C,
VCE=600V, VGE=0/15V, RG=15,
Dynamic test circuit in Figure E)
Figure 14. Typical switching energy losses
as a function of gate resistor
(inductive load, TJ=150°C,
VCE=600V, VGE=0/15V, IC=40A,
Dynamic test circuit in Figure E)
E, SWITCHING ENERGY LOSSES
50°C 100°C 150°C
0mJ
5mJ
10mJ
15mJ
Ets*
Eon*
*) Eon and Ets include losses
due to diode recovery
Eoff
E, SWITCHING ENERGY LOSSES
400V 500V 600V 700V 800V
0mJ
5mJ
10mJ
15mJ
Ets*
Eon*
*) Eon and Ets include losses
due to diode recovery
Eoff
TJ, JUNCTION TEMPERATURE VCE, COLLECTOR-EMITTER VOLTAGE
Figure 15. Typical switching energy losses
as a function of junction
temperature
(inductive load, VCE=600V,
VGE=0/15V, IC=40A, RG=15,
Dynamic test circuit in Figure E)
Figure 16. Typical switching energy losses
as a function of collector emitter
voltage
(inductive load, TJ=150°C,
VGE=0/15V, IC=40A, RG=15,
Dynamic test circuit in Figure E)
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IHW40T120
Soft Switching Series
Power Semiconductors 9 Rev. 2.3 Sep 08
VGE, GATE-EMITTER VOLTAGE
0nC 50nC 100nC 150nC 200nC 250nC
0V
5V
10V
15V
960V
240V
c, CAPACITANCE
0V 10V 20V
10pF
100pF
1nF
Crss
Coss
Ciss
QGE, GATE CHARGE VCE, COLLECTOR-EMITTER VOLTAGE
Figure 17. Typical gate charge
(IC=40 A)
Figure 18. Typical capacitance as a function
of collector-emitter voltage
(VGE=0V, f = 1 MHz)
tSC, SHORT CIRCUIT WITHSTAND TIME
12V 14V 16V
0µs
5µs
10µs
15µs
IC(sc), short circuit COLLECTOR CURRENT
12V 14V 16V 18V
0A
100A
200A
300A
VGE, GATE-EMITTETR VOLTAGE VGE, GATE-EMITTETR VOLTAGE
Figure 19. Short circuit withstand time as a
function of gate-emitter voltage
(VCE=600V, start at TJ=25°C)
Figure 20. Typical short circuit collector
current as a function of gate-
emitter voltage
(VCE ≤ 600V, Tj ≤ 150°C)
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IHW40T120
Soft Switching Series
Power Semiconductors 10 Rev. 2.3 Sep 08
ZthJC, TRANSIENT THERMAL RESISTANCE
10µs 100µs 1ms 10ms 100ms
1
0-3K/W
1
0-2K/W
1
0-1K/W
single pulse
0.01
0.02
0.05
0.1
0.2
D=0.5
ZthJC, TRANSIENT THERMAL RESISTANCE
10
µ
s100
µ
s 1ms 10ms 100ms
10-2K/W
10-1K/W
100K/W
single pulse
0.01
0.02
0.05
0.1
0.2
D=0.5
tP, PULSE WIDTH tP, PULSE WIDTH
Figure 23. IGBT transient thermal resistance
(D = tp / T)
Figure 24. Diode transient thermal
impedance as a function of pulse
width
(D=tP/T)
trr, REVERSE RECOVERY TIME
200A/µs 400A/µs 600A/µs 800A/µs
0ns
100ns
200ns
300ns
400ns
500ns
600ns
TJ=25°C
TJ=150°C
Qrr, REVERSE RECOVERY CHARGE
200A/µs 400A/µs 600A/µs 800A/µs
0µC
1µC
2µC
3µC
TJ=25°C
TJ=150°C
diF/dt, DIODE CURRENT SLOPE diF/dt, DIODE CURRENT SLOPE
Figure 23. Typical reverse recovery time as
a function of diode current slope
(VR=600V, IF=15A,
Dynamic test circuit in Figure E)
Figure 24. Typical reverse recovery charge
as a function of diode current
slope
(VR=600V, IF=15A,
Dynamic test circuit in Figure E)
R,(K/W)
τ
, (s)
0.159 1.10*10-1
0.133 1.56*10-2
0.120 1.35*10-3
0.038 1.51*10-4
C1=
τ
1/R1
R1R2
C2=
τ
2
R2
R,(K/W)
τ
, (s)
0.2113 7.23*10-2
0.2922 8.13*10-3
0.3666 1.09*10-3
0.2248 1.55*10-4
C1=
τ
1/R1
R1R2
C2=
τ
2
R2
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IHW40T120
Soft Switching Series
Power Semiconductors 11 Rev. 2.3 Sep 08
Irr, REVERSE RECOVERY CURRENT
200A/µs 400A/µs 600A/µs 800A/µs
0A
5A
1
0A
1
5A
2
0A
2
5A
3
0A
TJ=25°C
TJ=150°C
d
i
rr/dt, DIODE PEAK RATE OF FALL
OF REVERSE RECOVERY CURRENT
200A/µs 400A/µs 600A/µs 800A/µs
-0A/µs
-100A/µs
-200A/µs
-300A/µs
TJ=25°C
TJ=150°C
diF/dt, DIODE CURRENT SLOPE diF/dt, DIODE CURRENT SLOPE
Figure 25. Typical reverse recovery current
as a function of diode current
slope
(VR=600V, IF=15A,
Dynamic test circuit in Figure E)
Figure 26. Typical diode peak rate of fall of
reverse recovery current as a
function of diode current slope
(VR=600V, IF=15A,
Dynamic test circuit in Figure E)
IF, FORWARD CURRENT
0V 1V 2V
0A
10A
2
0A
3
0A
4
0A
150°C
TJ=25°C
VF, FORWARD VOLTAGE
-50°C 0°C 50°C 100°C
0,0V
0,5V
1,0V
1,5V
2,0V
15A
8A
IF=30A
5A
VF, FORWARD VOLTAGE TJ, JUNCTION TEMPERATURE
Figure 27. Typical diode forward current as
a function of forward voltage
Figure 28. Typical diode forward voltage as a
function of junction temperature
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IHW40T120
Soft Switching Series
Power Semiconductors 12 Rev. 2.3 Sep 08
5.44
0.55
6.04
5.49
1.68
3.68
4.17
20.82
16.25
15.70
1.05
3.50
19.80
13.10
3
MIN
1.90
4.90
2.27
1.07
1.85
1.90
0.238
0.216
0.066
0.145
0.164
0.075
0.820
0.640
0.618
0.022
0.193
0.089
0.042
0.073
0.041
0.075
0.138
0.780
0.516
0.68
6.30
6.00
17.65
2.60
5.10
14.15
3.70
21.10
16.03
20.31
1.35
4.47
2.41
5.16
2.53
1.33
2.11
MAX
2.16
0.027
0.214
3
0.248
0.236
0.695
0.557
0.102
0.201
0.831
0.631
0.053
0.146
0.799
0.176
MIN MAX
0.095
0.203
0.099
0.052
0.083
0.085
0
7.5mm
55
0
17-12-2007
03
Z8B00003327
2.87
2.87
0.113
0.113
3.38
3.13
0.133
0.123
M
M
PG-TO247-3
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IHW40T120
Soft Switching Series
Power Semiconductors 13 Rev. 2.3 Sep 08
Figure A. Definition of switching times
Figure B. Definition of switching losses
I
rrm
90% I
rrm
10% I
rrm
di /dt
F
t
rr
I
F
i,
v
t
Q
S
Q
F
t
S
t
F
V
R
di /dt
rr
Q=Q Q
rr S F
+
t=t t
rr S F
+
Figure C. Definition of diodes
switching characteristics
p(t)
12 n
T(t)
j
τ
1
1
τ
2
2
n
n
τ
T
C
rr
r
r
rr
Figure D. Thermal equivalent
circuit
Figure E. Dynamic test circuit
Leakage inductance L
σ
=180nH
and Stray capacity Cσ =39pF.
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IHW40T120
Soft Switching Series
Power Semiconductors 14 Rev. 2.3 Sep 08
Published by
Infineon Technologies AG
81726 Munich, Germany
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