28
Silicon PNP Epitaxial Planar Transistor (Complement to type 2SC4467) Application : Audio and General Purpose
Symbol
VCBO
VCEO
VEBO
IC
IB
PC
Tj
Tstg
2SA1694
–120
–120
–6
–8
–3
80(Tc=25°C)
150
–55 to +150
Unit
V
V
V
A
A
W
°C
°C
■
Absolute maximum ratings
■
Electrical Characteristics
■Typical Switching Characteristics (Common Emitter)
Symbol
ICBO
IEBO
V(BR)CEO
hFE
VCE(sat)
fT
COB
2SA1694
–10max
–10max
–120min
50min∗
–1.5max
20typ
300typ
Unit
µ
A
µ
A
V
V
MHz
pF
Conditions
VCB=–120V
VEB=–6V
IC=–50mA
VCE=–4V, IC=–3A
IC=–3A, IB=–0.3A
VCE=–12V, IE=0.5A
VCB=–10V, f=1MHz
2SA1694
(Ta=25°C) (Ta=25°C)
VCC
(V)
–40
RL
(Ω)
10
IC
(A)
–4
VBB2
(V)
5
IB2
(A)
0.4
ton
(
µ
s)
0.14typ
tstg
(
µ
s)
1.40typ
tf
(
µ
s)
0.21typ
IB1
(A)
–0.4
VBB1
(V)
–10
IC–VCE Characteristics
(Typical)
hFE–IC Characteristics
(Typical)
Safe Operating Area (Single Pulse)
hFE–IC
Temperature Characteristics (Typical)
IC–VBE Temperature Characteristics
(Typical)
VCE(sat)–IB Characteristics
(Typical)
Pc–Ta Derating
0
0
–2
–4
–6
–8
–1 –2 –3 –4
Collector-Emitter Voltage VCE(V)
Collector Current IC(A)
–350mA
–200mA
–150mA
–25mA
–100mA
–75mA
–50mA
I
B
=–10mA
0
–3
–2
–1
0
–0.1 –0.2 –0.3 –0.4 –0.5 –0.6 –0.7 –0.8 –0.9 –1.0
Base Current IB(A)
Collector-Emitter Saturation Voltage VCE(sat)(V)
IC=–8A
–4A
–2A
–0.02 –0.1 –0.5 –1 –8–5
30
50
100
200
Collector Current IC(A)
DC Current Gain hFE
(VCE=–4V)
Typ
–10 –50–5 –100 –200
–0.1
–1
–0.5
–10
–20
–5
Collector-Emitter Voltage VCE(V)
Collector Current IC(A)
Without Heatsink
Natural Cooling
DC
100ms
10ms
0.02 0.10.05 0.5 1 5 8
0
20
10
30
Cut-off Frequency fT(MHZ)
(VCE=–12V)
Emitter Current IE(A)
Typ
0.3
1
3
0.5
1 10 100 1000
Time t(ms)
Transient Thermal Resistance θj-a(˚C/W)
θj-a–t Characteristics
fT–IE Characteristics
(Typical)
80
60
40
20
3.5
00 25 50 75 100 125 150
Ambient Temperature Ta(˚C)
Maximum Power Dissipation PC(W)
With Infinite heatsink
Without Heatsink
0
–8
–6
–2
–4
0 –1.5–1.0–0.5
Base-Emittor Voltage VBE(V)
Collector Current IC(A)
(VCE=–4V)
125˚C (Case Temp)
25˚C (Case Temp)
–30˚C (Case Temp)
(VCE=–4V)
–0.02 –0.1 –0.5 –1 –5 –8
30
50
100
300
DC Current Gain hFE
125˚C
25˚C
–30˚C
Collector Current IC(A)
External Dimensions MT-100(TO3P)
15.6±0.4
9.6
19.9±0.3
4.0 2.0
5.0±0.2
1.8
ø3.2±0.1
2
3
1.05
+0.2
-0.1
20.0min
4.0max
BE
5.45±0.1 5.45±0.1
C
4.8±0.2
0.65
+0.2
-0.1
1.4
2.0±0.1
a
b
Weight : Approx 6.0g
a. Type No.
b. Lot No.
∗hFE Rank O(50to100), P(70to140), Y(90to180)
