2008. 8. 29 1/3
SEMICONDUCTOR
TECHNICAL DATA
BC856W/7W/8W
EPITAXIAL PLANAR PNP TRANSISTOR
Revision No : 4
GENERAL PURPOSE APPLICATION.
SWITCHING APPLICATION .
FEATURES
·For Complementary With NPN Type BC846W/847W/848W.
MAXIMUM RATING (Ta=25℃)
DIM MILLIMETERS
A
B
D
E
USM
2.00 0.20
1.25 0.15
0.90 0.10
0.3+0.10/-0.05
2.10 0.20
0.65
0.15+0.1/-0.06
1.30
0.00~0.10
0.70
C
G
H
J
K
L
K
13
2
E
B
D
A
J
G
C
L
H
MM
NN
M 0.42 0.10
N 0.10 MIN
P0.1 MAX
+
_
+
_
+
_
+
_
+
_
P
1. EMITTER
2. BASE
3. COLLECTOR
MARK SPEC
TYPE BC856W-A BC856W-B BC857W-A BC857W-B BC857W-C BC858W-A BC858W-B BC858W-C
MARK 3A 3B 3E 3F 3G 3J 3K 3L
Type Name
Marking
Lot No.
CHARACTERISTIC SYMBOL RATING UNIT
Collector-Base Voltage
BC856W
VCBO
-80
VBC857W -50
BC858W -30
Collector-Emitter
Voltage
BC856W
VCEO
-65
VBC857W -45
BC858W -30
Emitter-Base Voltage
BC856W
VEBO
-5
VBC857W -5
BC858W -5
Collector Current IC-100 mA
Emitter Current IE100 mA
Collector Power Dissipation PC100 mW
Junction Temperature Tj150 ℃
Storage Temperature Range Tstg -55～150 ℃
2008. 8. 29 2/3
BC856W/7W/8W
Revision No : 4
ELECTRICAL CHARACTERISTICS (Ta=25℃)
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
Collector Cut-off Current ICBO VCB=-30V, IE=0 - - -15 nA
DC Current Gain (Note)
BC856W
hFE VCE=-5V, IC=-2mA
125 - 475
BC857W 125 - 800
BC858W 125 - 800
Collector-Emitter Saturation Voltage
VCE(sat) 1I
C=-10mA, IB=-0.5mA - -0.09 -0.3
V
VCE(sat) 2I
C=-100mA, IB=-5mA - -0.25 -0.65
Base-Emitter Saturation Voltage
VBE(sat) 1I
C=-10mA, IB=-0.5mA - -0.7 -
V
VBE(sat) 2I
C=-100mA, IB=-5mA - -0.9 -
Base-Emitter Voltage VBE(ON1) VCE=-5V, IC=-2mA -0.6 -0.65 -0.75 V
Base-Emitter Voltage VBE(ON2) VCE=-5V, IC=-10mA - - -0.82 V
Transition Frequency fTVCE=-5V, IC=-10mA, f=100MHz - 150 - MHz
Collector Output Capacitance Cob VCB=-10V, IE=0, f=1MHz - 4.5 - pF
Noise Figure NF
VCE=-6V, IC=-0.2mA
Rg=2kΩ, f=1kHz - 2.0 10 dB
NOTE : According to the value of hFE the BC856, BC857, BC858 are classified as follows.
CLASSIFICATION A B C
hFE
BC856W 125～250 220～475 -
BC857W 125～250 220～475 420～800
BC858W 125～250 220～475 420～800
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BC856W/7W/8W
Revision No : 4
C
COLLECTOR CURRENT I (mA)
0
COLLECTOR CURRENT I (mA)
C
-0.1
-0.2
BASE-EMITTER VOLTAGE V (V)
BE
0
COLLECTOR-EMITTER VOLTAGE V (V)
CE
CEC
I - V I - V
COLLECTOR-BASE VOLTAGE V (V)
CAPACITANCE C (pF)
ob
10
1
-1 -3
20
CB
-10 -30
C - V
COLLECTOR CURRENT I (mA)
DC CURRENT GAIN h
-0.1 -0.3
FE
-1 -3
C
h - I
-4 -8 -12 -16 -20
-10
-20
-30
-40
-50
I =-400µA
B
I =-350µA
B
I =-50µA
B
I =-100µA
B
I =-150µA
B
I =-200µA
B
I =-250µA
B
I =-300µA
B
CBE
-0.4 -0.6 -0.8 -1.0
-0.3
-0.5
-1
-3
-5
-10
-30
-50
-100
V =-5V
CE
FE C
-10 -30 -100
10
30
50
100
300
500
1k
SATURATION VOLTAGE
-1
COLLECTOR CURRENT I (mA)
-0.1
-0.01
-0.03
-0.1
-0.3 -30-3 -10
C
-100
BE(sat)
-0.3
-1
V , V - I
BE(sat) CCE(sat)
V , V (V)
CE(sat)
-3
-10
I /I =20
CB
VBE(sat)
VCE(sat)
ob CB
-100 -200
3
5
f=1MHz
I =0
E
V =-5V
CE
