PROFET® BTS 442 E2
Data Sheet 1 of 14 2010-Jan-26
Smart Highside Power Switch
Features
• Overload protection
• Current limitation
• Short-circuit protection
• Thermal shutdown
• Overvoltage protection (including load dump)
• Fast demagnetization of inductive loads
• Reverse battery protection1)
• Undervoltage and overvoltage shutdown with
auto-restart and hysteresis
• Open drain diagnostic output
• Open load detection in ON-state
• CMOS compatible input
• Loss of ground and loss of Vbb protection2)
• Electrostatic discharge (ESD) protection
• Green Product (RoHS compliant)
• AEC qualified
Application
• µC compatible power switch with diagnostic feedback for 12 V and 24 V DC grounded loads
• All types of resistive, inductive and capacitve loads
• Replaces electromechanical relays and discrete circuits
General Description
N channel vertical power FET with charge pump, ground referenced CMOS compatible input and diagnostic
feedback, integrated in Smart SIPMOS chip on chip technology. Providing embedded protective functions.
+ Vbb
IN
ST
Signal GND
ESD
PROFET
OUT
GND
Logic
Voltage
sensor
Voltage
source
Open load
detection
Short circuit
detection
Charge pump
Level shifter Temperature
sensor
Rectifier
Limit for
unclamped
ind. loads
Gate
protection
Current
limit
2
4
1
3
5
Load GND
Load
VLogic
Overvoltage
protection
Rbb
1) No external components required, reverse load current limited by connected load.
2) Additional external diode required for charged inductive loads
Product Summary
Overvoltage protection Vbb(AZ) 63 V
Operating voltage Vbb(on) 4.5 ... 42 V
On-state resistance RON 18 mΩ
Load current (ISO) IL(ISO) 21 A
Current limitation IL(SCr) 70 A
PG-TO220-5-11 PG-TO263-5-2
5
Standard
1
5
SMD
PROFET® BTS 442 E2
Data Sheet 2 2010-Jan-26
Pin Symbol Function
1 GND Logic ground
2 IN Input, activates the power switch in case of logical high signal
3 Vbb Positive power supply voltage,
the tab is shorted to this pin
4 ST Diagnostic feedback, low on failure
5 OUT
(Load, L)
Output to the load
Maximum Ratings at Tj = 25 °C unless otherwise specified
Parameter Symbol Values Unit
Supply voltage (overvoltage protection see page 3) Vbb 63 V
Load dump protection VLoadDump = UA + Vs, UA = 13.5 V
RI= 2 Ω, RL= 1.1 Ω, td= 200 ms, IN= low or high
VLoad dump3) 80 V
Load current (Short-circuit current, see page 4) IL self-limited A
Operating temperature range
Storage temperature range
Tj
Tstg
-40 ...+150
-55 ...+150
°C
Power dissipation (DC) Ptot 167 W
Inductive load switch-off energy dissipation,
single pulse T
j=150 °C:
EAS 2.1 J
Electrostatic discharge capability (ESD)
(Human Body Model)
VESD 2.0 kV
Input voltage (DC) VIN -0.5 ... +6 V
Current through input pin (DC)
Current through status pin (DC)
see internal circuit diagrams page 6...
IIN
IST
±5.0
±5.0
mA
Thermal resistance chip - case:
junction - ambient (free air):
RthJC
RthJA
≤ 0.75
≤ 75
K/W
SMD version, device on pcb4): typ. 33
3) VLoad dump is setup without the DUT connected to the generator per ISO 7637-1 and DIN 40839
4) Device on 50mm*50mm*1.5mm epoxy PCB FR4 with 6cm2 (one layer, 70µm thick) copper area for Vbb
connection. PCB is vertical without blown air.
PROFET® BTS 442 E2
Data Sheet 3 2010-Jan-26
Electrical Characteristics
Parameter and Conditions Symbol Values Unit
at Tj = 25 °C, Vbb = 12 V unless otherwise specified
min typ max
Load Switching Capabilities and Characteristics
On-state resistance (pin 3 to 5)
IL = 5 A T
j=25 °C:
T
j=150 °C:
RON
--
15
28
18
35
mΩ
Nominal load current (pin 3 to 5)
ISO Proposal: VON = 0.5 V, T
C = 85 °C
IL(ISO) 17 21 -- A
Output current (pin 5) while GND disconnected or
GND pulled up, VIN= 0, see diagram page 7,
Tj =-40...+150°C
IL(GNDhigh) -- -- 1 mA
Turn-on time to 90% VOUT:
Turn-off time to 10% VOUT:
RL = 12 Ω, Tj =-40...+150°C
ton
toff
100
10
--
--
350
130
µs
Slew rate on
10 to 30% VOUT, RL = 12 Ω, Tj =-40...+150°C
dV /dton 0.2 -- 2 V/µs
Slew rate off
70 to 40% VOUT, RL = 12 Ω, Tj =-40...+150°C
-dV/dtoff 0.4 -- 5 V/µs
Operating Parameters
Operating voltage 5) Tj =-40...+150°C: Vbb(on) 4.5 -- 42 V
Undervoltage shutdown Tj =-40...+150°C: Vbb(under) 2.4 -- 4.5 V
Undervoltage restart Tj =-40...+150°C: Vbb(u rst) -- -- 4.5 V
Undervoltage restart of charge pump
see diagram page 12 Tj =-40...+150°C:
Vbb(ucp) -- 6.5 7.5 V
Undervoltage hysteresis
∆Vbb(under) = Vbb(u rst) - Vbb(under)
∆Vbb(under) -- 0.2 -- V
Overvoltage shutdown Tj =-40...+150°C: Vbb(over) 42 -- 52 V
Overvoltage restart Tj =-40...+150°C: Vbb(o rst) 42 -- -- V
Overvoltage hysteresis Tj =-40...+150°C: ∆Vbb(over) -- 0.2 -- V
Overvoltage protection6) Tj =-40°C:
Ibb=40 mA Tj =25...+150°C:
Vbb(AZ) 60
63
--
67
-- V
Standby current (pin 3) Tj=-40...+25°C:
VIN=0 T
j=150°C:
Ibb(off) --
--
12
18
25
60
µA
Leakage output current (included in Ibb(off))
VIN=0
IL(off) -- 6 -- µA
Operating current (Pin 1)7), VIN=5 V IGND -- 1.1 -- mA
5) At supply voltage increase up to Vbb= 6.5 V typ without charge pump, VOUT ≈Vbb - 2 V
6) see also VON(CL) in table of protection functions and circuit diagram page 7. Measured without load.
7) Add IST, if IST > 0, add IIN, if VIN>5.5 V
PROFET® BTS 442 E2
Parameter and Conditions Symbol Values Unit
at Tj = 25 °C, Vbb = 12 V unless otherwise specified
min typ max
Data Sheet 4 2010-Jan-26
Protection Functions8)
Initial peak short circuit current limit (pin 3 to 5)9),
( max 400 µs if VON > VON(SC) )
IL(SCp)
Tj =-40°C:
Tj =25°C:
Tj =+150°C:
--
--
45
--
95
--
140
--
--
A
Repetitive short circuit current limit IL(SCr)
Tj = Tjt (see timing diagrams, page 10) 30 70 -- A
Short circuit shutdown delay after input pos. slope
VON > VON(SC), Tj =-40..+150°C:
min value valid only, if input "low" time exceeds 30 µs
td(SC)
80
-- 400 µs
Output clamp (inductive load switch off)
at VOUT = Vbb - VON(CL), IL= 30 mA
VON(CL)
--
58 -- V
Short circuit shutdown detection voltage
(pin 3 to 5)
VON(SC)
--
8.3 -- V
Thermal overload trip temperature Tjt 150 -- -- °C
Thermal hysteresis
∆
Tjt -- 10 -- K
Inductive load switch-off energy dissipation10),
Tj Start = 150 °C, single pulse Vbb = 12 V:
Vbb = 24 V:
EAS
ELoad12
ELoad24
-- -- 2.1
1.7
1.2
J
Reverse battery (pin 3 to 1) 11) -Vbb -- -- 32 V
Integrated resistor in Vbb line Rbb -- 120 -- Ω
Diagnostic Characteristics
Open load detection current Tj=-40 °C:
(on-condition) Tj=25..150°C:
IL (OL) 2
2
--
--
1900
1500
mA
8) Integrated protection functions are designed to prevent IC destruction under fault conditions described in the
data sheet. Fault conditions are considered as "outside" normal operating range. Protection functions are not
designed for continuous repetitive operation.
9) Short circuit current limit for max. duration of td(SC) max=400 µs, prior to shutdown
10) While demagnetizing load inductance, dissipated energy in PROFET is EAS= ∫ VON(CL) * iL(t) dt, approx.
EAS= 1/2 * L * I2
L * ( VON(CL)
VON(CL) - Vbb ), see diagram page 8.
11) Reverse load current (through intrinsic drain-source diode) is normally limited by the connected load.
Reverse current IGND of ≈ 0.3 A at Vbb= -32 V through the logic heats up the device. Time allowed under
these condition is dependent on the size of the heatsink. Reverse IGND can be reduced by an additional
external GND-resistor (150 Ω). Input and Status currents have to be limited (see max. ratings page 2 and
circuit page 7).
PROFET® BTS 442 E2
Parameter and Conditions Symbol Values Unit
at Tj = 25 °C, Vbb = 12 V unless otherwise specified
min typ max
Data Sheet 5 2010-Jan-26
Input and Status Feedback12)
Input turn-on threshold voltage
Tj =-40..+150°C:
VIN(T+) 1.5 -- 2.4 V
Input turn-off threshold voltage
Tj =-40..+150°C:
VIN(T-) 1.0 -- -- V
Input threshold hysteresis ∆ VIN(T) -- 0.5 -- V
Off state input current (pin 2), VIN = 0.4 V IIN(off) 1 -- 30 µA
On state input current (pin 2), VIN = 3.5 V IIN(on) 10 25 50 µA
Status invalid after positive input slope
(short circuit) Tj=-40 ... +150°C:
td(ST SC)
80 200 400 µs
Status invalid after positive input slope
(open load) Tj=-40 ... +150°C:
td(ST)
350 -- 1600 µs
Status output (open drain)
Zener limit voltage T
j =-40...+150°C, IST = +1.6 mA:
ST low voltage Tj =-40...+150°C, IST = +1.6 mA:
VST(high)
VST(low)
5.4
--
6.1
--
--
0.4
V
12) If a ground resistor RGND is used, add the voltage drop across this resistor.
PROFET® BTS 442 E2
Data Sheet 6 2010-Jan-26
Truth Table
Input- Output Status
level level 442
E2
Normal
operation
L
H
L
H
H
H
Open load L
H
13)
H
H
L
Short circuit
to GND
L
H
L
L
H
L
Short circuit
to Vbb
L
H
H
H
H
H (L14))
Overtem-
perature
L
H
L
L
L
L
Under-
voltage
L
H
L
L
H
H
Overvoltage L
H
L
L
H
H
L = "Low" Level
H = "High" Level
13) Power Transistor off, high impedance
14) Low resistance short Vbb to output may be detected by no-load-detection
Terms
PROFET
V
IN
ST
OUT
GND
bb
VST
VIN
IST
IIN
Vbb
Ibb
IL
VOUT
IGND
VON
1
2
4
3
5
RGND
Input circuit (ESD protection)
IN
GND
I
R
ZD ZD
I
I
I1 I2
ESD-
ZDI1 6.1 V typ., ESD zener diodes are not to be used
as voltage clamp at DC conditions. Operation in this
mode may result in a drift of the zener voltage
(increase of up to 1 V).
PROFET® BTS 442 E2
Data Sheet 7 2010-Jan-26
Status output
ST
GND
ESD-
ZD
+5V
RST(ON)
ESD-Zener diode: 6.1 V typ., max 5 mA;
RST(ON) < 250 Ω at 1.6 mA, ESD zener diodes are not
to be used as voltage clamp at DC conditions.
Operation in this mode may result in a drift of the zener
voltage (increase of up to 1 V).
Short Circuit detection
Fault Condition: VON > 8.3 V typ.; IN high
Short circuit
detection
Logic
unit
+ Vbb
OUT
VON
Inductive and overvoltage output clamp
+ Vbb
OUT
GND
VZ
VON
VON clamped to 58 V typ.
Overvolt. and reverse batt. protection
+ Vbb
VOUT
IN
ST
bb
R
Signal GND
Logic
PROFET
VZ
RGND
GND
IN
R
ST
R
Rbb = 120 Ω typ., VZ +Rbb*40 mA = 67 V typ., add
RGND, RIN, RST for extended protection
Open-load detection
ON-state diagnostic condition: VON < RON * IL(OL); IN
high
Open load
detection
Logic
unit
+ Vbb
OUT
ON
VON
GND disconnect
PROFET
V
IN
ST
OUT
GND
bb
Vbb 1
2
4
3
5
VIN VST V
GND
Any kind of load. In case of Input=high is VOUT ≈ VIN - VIN(T+) .
Due to VGND >0, no VST = low signal available.
PROFET® BTS 442 E2
Data Sheet 8 2010-Jan-26
GND disconnect with GND pull up
PROFET
V
IN
ST
OUT
GND
bb
Vbb
1
2
4
3
5
VGND
VIN VST
Any kind of load. If VGND > VIN - VIN(T+) device stays off
Due to VGND >0, no VST = low signal available.
Vbb disconnect with charged inductive
load
PROFET
V
IN
ST
OUT
GND
bb
Vbb
1
2
4
3
5
high
PROFET
V
IN
ST
OUT
GND
bb
Vbb
1
2
4
3
5
high
Inductive Load switch-off energy
dissipation
PROFET
V
IN
ST
OUT
GND
bb
=
E
E
E
EAS
bb
L
R
ELoad
Energy dissipated in PROFET EAS = Ebb + EL - ER.
ELoad < EL, EL = 1/2 * L * I2
L
PROFET® BTS 442 E2
Data Sheet 9 2010-Jan-26
Options Overview
all versions: High-side switch, Input protection, ESD protection, load dump and
reverse battery protection , protection against loss of ground
Type BTS 442E2
Logic version E
Overtemperature protection
Tj >150 °C, latch function15)16)
Tj >150 °C, with auto-restart on cooling
X
Short-circuit to GND protection
switches off when VON>8.3 V typ.15)
(when first turned on after approx. 200 µs)
X
Open load detection
in OFF-state with sensing current 30 µA typ.
in ON-state with sensing voltage drop across
power transistor
X
Undervoltage shutdown with auto restart X
Overvoltage shutdown with auto restart X
Status feedback for
overtemperature
short circuit to GND
short to Vbb
open load
undervoltage
overvoltage
X
X
-17)
X
-
-
Status output type
CMOS
Open drain
X
Output negative voltage transient limit
(fast inductive load switch off)
to Vbb - VON(CL) X
Load current limit
high level (can handle loads with high inrush currents)
medium level
low level (better protection of application)
X
15) Latch except when Vbb -VOUT < VON(SC) after shutdown. In most cases VOUT = 0 V after shutdown (VOUT ≠
0 V only if forced externally). So the device remains latched unless Vbb < VON(SC) (see page 4). No latch
between turn on and td(SC).
16) With latch function. Reseted by a) Input low, b) Undervoltage, c) Overvoltage
17) Low resistance short Vbb to output may be detected by no-load-detection
PROFET® BTS 442 E2
Data Sheet 10 2010-Jan-26
Timing diagrams
Figure 1a: Vbb turn on:
IN
V
OUT
t
V
bb
ST open drain
A
A
td(bb IN)
in case of too early VIN=high the device may not turn on (curve A)
td(bb IN) approx. 150 µs
Figure 2a: Switching a lamp,
IN
ST
OUT
L
t
V
I
Figure 2b: Switching an inductive load
IN
ST
L
t
V
I
*)
OUT
td(ST)
IL(OL)
*) if the time constant of load is too large, open-load-status may
occur
Figure 3a: Turn on into short circuit,
IN
ST
OUT
L
t
V
I
td(SC)
t
d(SC) approx. 200µs if Vbb - VOUT > 8.3 V typ.
PROFET® BTS 442 E2
Data Sheet 11 2010-Jan-26
Figure 3b: Turn on into overload,
IN
ST
L
t
I
L(SCr)
I
IL(SCp)
Heating up may require several milliseconds,
Vbb - VOUT < 8.3 V typ.
Figure 3c: Short circuit while on:
IN
ST
OUT
L
t
V
I**)
**) current peak approx. 20 µs
Figure 4a: Overtemperature:
Reset if Tj <Tjt
IN
ST
OUT
J
t
V
T
Figure 5a: Open load: detection in ON-state, turn
on/off to open load
IN
ST
OUT
L
t
V
I
open
td(ST)
PROFET® BTS 442 E2
Data Sheet 12 2010-Jan-26
Figure 5b: Open load: detection in ON-state, open
load occurs in on-state
IN
ST
OUT
L
t
V
Iopen
normal normal
td(ST OL1) td(ST OL2)
td(ST OL1) = tbd µs typ., td(ST OL2) = tbd µs typ
Figure 6a: Undervoltage:
IN
V
OUT
t
V
bb
ST open drain
VV
bb(under)
bb(u rst)
bb(u cp)
V
Figure 6b: Undervoltage restart of charge pump
VON [V]
bb(under)
V
Vbb(u rst)
Vbb(over)
Vbb(o rst)
Vbb(u cp)
off
on
off
V
ON(CL)
Vbb
Von
Vbb [V]
charge pump starts at Vbb(ucp) =6.5 V typ.
Figure 7a: Overvoltage:
IN
V
OUT
t
V
bb
ST
ON(CL)
VVbb(over) Vbb(o rst)
PROFET® BTS 442 E2
Data Sheet 13 2010-Jan-26
Package and Ordering Code
All dimensions in mm
PG-TO220-5-11
BTS 442 E2
A
A0.25 M
9.9 ±0.2
2.8
1)
15.65
±0.3
12.95
0...0.15
±0.1
1.27
4.4
9.25
±0.2
0.05
C
±0.2
17
±0.3
8.5 1)
10 ±0.2
3.7-0.15
C
0.5 ±0.1
±0.3
8.6
10.2
±0.3
±0.4
3.9
±0.4
8.4
3.7
±0.3
5 x ±0.1
0.8
1.74 x
2.4
±0.3
1.6
All metal surfaces tin plated, except area of cut.
Typical
1)
0...0.3
SMD PG-TO263-5-2
BTS442E2 E3062A
BA0.25
M
±0.2
GPT09062
10
8.5
1)
(15)
±0.2
9.25
±0.3
1
0...0.15
5 x 0.8
±0.1
±0.1
1.27
4.4
B
0.5
±0.1
±0.3
2.7
4.7
±0.5
±0.3
1.3
2.4
1.7
0...0.3 A
1)
7.55
4 x
All metal surfaces tin plated, except area of cut.
Metal surface min. X = 7.25, Y = 6.9
Typical
1)
0.1 B
0.1
0.05
8˚ MAX.
Green Product
To meet the world-wide customer requirements for environmentally friendly products and to be compliant with
government regulations the device is available as a green product. Green products are RoHS-Compliant (i.e Pb-
free finish on leads and suitable for Pb-free soldering according to IPC/JEDEC J-STD-020).
Revision History
Version Date Changes
Rev. 1.1 2010-01-26 Page 13: Package drawing for PG-TO220-5-11 corrected.
Rev. 1.0 2009-11-12 RoHS-compliant version of BTS442E2
Removal of straight lead package variant E3043
Page 1, page 13: RoHS compliance statement and Green product feature added
Page 1, page 13: Change to RoHS compliant packages; PG-TO220-5-11 for
standard (staggered) variant; PG-TO263-5-2 for E3062A variant.
Page 2: Thermal resistance junction to ambient for SMD version set to typically
33K/W.
Page 2: Pin marking removed.
Page 6, 9: Discontinued variants removed from truth table & options overview.
Legal disclaimer updated
PROFET® BTS 442 E2
Data Sheet 14 2010-Jan-26
Published by
Infineon Technologies AG
81726 Munich, Germany
© 2010 Infineon Technologies AG
All Rights Reserved.
Legal Disclaimer
The information given in this document shall in no event be regarded as a guarantee of conditions or
characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any
information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties
and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights
of any third party.
Information
For further information on technology, delivery terms and conditions and prices, please contact the nearest
Infineon Technologies Office (www.infineon.com).
Warnings
Due to technical requirements, components may contain dangerous substances. For information on the types in
question, please contact the nearest Infineon Technologies Office.
Infineon Technologies components may be used in life-support devices or systems only with the express written
approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure
of that life-support device or system or to affect the safety or effectiveness of that device or system. Life support
devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain
and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may
be endangered.
