$GYDQFHG 3RZHU 026)(7 IRF730A FEATURES BVDSS = 400 V Avalanche Rugged Technology Rugged Gate Oxide Technology RDS(on) = 1.0 Lower Input Capacitance Improved Gate Charge ID = 5.5 A Extended Safe Operating Area Lower Leakage Current: 10A (Max.) @ VDS = 400V TO-220 Lower RDS(ON): 0.765 (Typ.) 1 2 3 1.Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol VDSS ID Value Units Drain-to-Source Voltage Characteristic 400 V Continuous Drain Current (TC=25C) 5.5 Continuous Drain Current (TC=100C) 3.5 A IDM Drain Current-Pulsed VGS Gate-to-Source Voltage 30 V EAS Single Pulsed Avalanche Energy (2) 346 mJ A 22 (1) A IAR Avalanche Current (1) 5.5 EAR Repetitive Avalanche Energy (1) 7.3 mJ dv/dt Peak Diode Recovery dv/dt (3) 4.0 V/ns 73 W 0.58 W/C PD TJ , TSTG TL Total Power Dissipation (TC=25C) Linear Derating Factor Operating Junction and - 55 to +150 Storage Temperature Range C Maximum Lead Temp. for Soldering 300 Purposes, 1/8 from case for 5-seconds Thermal Resistance Symbol Characteristic Typ. Max. RJC Junction-to-Case -- 1.71 RCS Case-to-Sink 0.5 -- RJA Junction-to-Ambient -- 62.5 Units C/W Rev. B (c)1999 Fairchild Semiconductor Corporation 1&+$11(/ 32:(5 026)(7 IRF730A Electrical Characteristics (TC=25C unless otherwise specified) Symbol Characteristic BVDSS Drain-Source Breakdown Voltage 400 -- -- BV/TJ Breakdown Voltage Temp. Coeff. -- 0.52 -- IGSS IDSS RDS(on) Gate Threshold Voltage 2.0 -- 4.0 Gate-Source Leakage , Forward -- -- 100 Gate-Source Leakage , Reverse -- -- -100 -- -- 10 -- -- 100 -- -- 1.0 Drain-to-Source Leakage Current Static Drain-Source On-State Resistance gfs Forward Transconductance -- 4.03 -- Ciss Input Capacitance -- 675 880 Coss Output Capacitance -- 95 110 Crss Reverse Transfer Capacitance -- 43 52 td(on) Turn-On Delay Time -- 15 40 Rise Time -- 18 50 Turn-Off Delay Time -- 62 140 Fall Time -- 22 60 Qg Total Gate Charge -- 32 42 Qgs Gate-Source Charge -- 4.6 -- Qgd Gate-Drain ( Miller ) Charge -- 16.6 -- tr td(off) tf V Test Condition VGS=0V,ID=250A V/C ID=250A V nA A VGS(th) Min. Typ. Max. Units pF See Fig 7 VDS=5V,ID=250A VGS=30V VGS=-30V VDS=400V VDS=320V,TC=125C VGS=10V,ID=2.75A (4) VDS=50V,ID=2.75A (4) VGS=0V,VDS=25V,f =1MHz See Fig 5 VDD=200V,ID=5.5A, ns RG=12 See Fig 13 (4) (5) VDS=320V,VGS=10V, nC ID=5.5A See Fig 6 & Fig 12 (4) (5) Source-Drain Diode Ratings and Characteristics Symbol Characteristic Min. Typ. Max. Units Test Condition IS Continuous Source Current -- -- 5.5 ISM Pulsed-Source Current (1) -- -- 22 VSD Diode Forward Voltage (4) -- -- 1.5 V trr Reverse Recovery Time -- 259 -- ns TJ=25C,IF=5.5A Qrr Reverse Recovery Charge -- 1.81 -- C diF/dt=100A/s A Notes; (1) Repetitive Rating: Pulse Width Limited by Maximum Junction Temperature (2) L=20mH, IAS=5.5A, VDD=50V, RG=27, Starting TJ =25C (3) ISD 5.5A, di/dt 140A/s, VDD BVDSS , Starting TJ =25C (4) Pulse Test: Pulse Width = 250s, Duty Cycle 2% (5) Essentially Independent of Operating Temperature Integral reverse pn-diode in the MOSFET TJ=25C,IS=5.5A,VGS=0V (4) 1&+$11(/ 32:(5 026)(7 IRF730A Fig 1. Output Characteristics Fig 2. Transfer Characteristics VGS Top : 15 V 10 V 8.0 V 7.0 V 6.0 V 5.5 V 5.0 V Bottom : 4.5 V 101 ID , Drain Current [A] ID , Drain Current [A] 101 100 @ Notes : 1. 250 s Pulse Test 2. TC = 25 oC 10-1 10-1 100 150 oC 100 25 oC - 55 oC 10-1 101 @ Notes : 1. VGS = 0 V 2. VDS = 50 V 3. 250 s Pulse Test 2 4 6 8 10 VGS , Gate-Source Voltage [V] VDS , Drain-Source Voltage [V] Fig 3. On-Resistance vs. Drain Current Fig 4. Source-Drain Diode Forward Voltage IDR , Reverse Drain Current [A] RDS(on) , [ ] Drain-Source On-Resistance 2.5 2.0 VGS = 10 V 1.5 1.0 VGS = 20 V 0.5 o @ Note : TJ = 25 C 0.0 0 5 10 15 20 101 100 o 25 C 10-1 0.4 25 @ Notes : 1. VGS = 0 V 2. 250 s Pulse Test 150 oC 0.6 0.8 1.0 1.2 1.4 ID , Drain Current [A] VSD , Source-Drain Voltage [V] Fig 5. Capacitance vs. Drain-Source Voltage Fig 6. Gate Charge vs. Gate-Source Voltage 1000 C iss 600 @ Notes : 1. VGS = 0 V 2. f = 1 MHz 400 C oss 200 00 10 C rss 1 10 VDS , Drain-Source Voltage [V] VDS = 80 V 10 VGS , Gate-Source Voltage [V] Capacitance [pF] 800 Ciss= Cgs+ Cgd ( Cds= shorted ) Coss= Cds+ Cgd Crss= Cgd VDS = 200 V VDS = 320 V 5 @ Notes : ID = 5.5 A 0 0 5 10 15 20 25 QG , Total Gate Charge [nC] 30 35 1&+$11(/ 32:(5 026)(7 IRF730A Fig 7. Breakdown Voltage vs. Temperature Fig 8. On-Resistance vs. Temperature 3.0 RDS(on) , (Normalized) Drain-Source On-Resistance BVDSS , (Normalized) Drain-Source Breakdown Voltage 1.2 1.1 1.0 0.9 0.8 -75 @ Notes : 1. VGS = 0 V 2. ID = 250 A -50 -25 0 25 50 75 100 125 150 2.5 2.0 1.5 1.0 @ Notes : 1. VGS = 10 V 2. ID = 2.75 A 0.5 0.0 -75 175 -50 -25 o 0 25 50 75 100 125 150 175 TJ , Junction Temperature [oC] TJ , Junction Temperature [ C] Fig 9. Max. Safe Operating Area Fig 10. Max. Drain Current vs. Case Temperature 6.0 ID , Drain Current [A] Operation in This Area is Limited by R DS(on) 10 s 101 100 s 1 ms 10 ms DC 100 @ Notes : 1. TC = 25 oC 10-1 4.5 3.0 1.5 o 2. TJ = 150 C 3. Single Pulse 10-2 0 10 101 102 0.0 25 103 50 75 100 Tc , Case Temperature [oC] VDS , Drain-Source Voltage [V] Thermal Response Fig 11. Thermal Response 100 D=0.5 @ Notes : 1. Z J C (t)=1.71 o C/W Max. 2. Duty Factor, D=t1 /t2 3. TJ M -TC =PD M *Z J C (t) 0.2 0.1 -1 10 0.05 0.02 0.01 PDM single pulse t1 t2 Z JC(t) , ID , Drain Current [A] 102 10- 2 - 5 10 10- 4 10- 3 10- 2 10- 1 t1 , Square Wave Pulse Duration 100 [sec] 101 125 150 1&+$11(/ 32:(5 026)(7 IRF730A Fig 12. Gate Charge Test Circuit & Waveform Current Regulator VGS Same Type as DUT 50k Qg 200nF 12V 10V 300nF VDS Qgs VGS Qgd DUT 3mA R1 R2 Current Sampling (IG) Resistor Charge Current Sampling (ID) Resistor Fig 13. Resistive Switching Test Circuit & Waveforms RL Vout Vout 90% VDD Vin ( 0.5 rated VDS ) RG DUT Vin 10% 10V tr td(on) td(off) t on tf t off Fig 14. Unclamped Inductive Switching Test Circuit & Waveforms BVDSS 1 EAS = ---- LL IAS2 -------------------2 BVDSS -- VDD LL VDS Vary tp to obtain required peak ID BVDSS IAS ID RG C DUT ID (t) VDD VDS (t) VDD 10V tp tp Time 1&+$11(/ 32:(5 026)(7 IRF730A Fig 15. Peak Diode Recovery dv/dt Test Circuit & Waveforms DUT + VDS -- IS L Driver VGS RG VGS VGS ( Driver ) Same Type as DUT VDD dv/dt controlled by RG IS controlled by Duty Factor D Gate Pulse Width D = -------------------------Gate Pulse Period 10V IFM , Body Diode Forward Current IS ( DUT ) di/dt IRM Body Diode Reverse Current VDS ( DUT ) Body Diode Recovery dv/dt Vf Body Diode Forward Voltage Drop VDD TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACExTM CoolFETTM CROSSVOLTTM E2CMOSTM FACTTM FACT Quiet SeriesTM FAST(R) FASTrTM GTOTM HiSeCTM ISOPLANARTM MICROWIRETM POPTM PowerTrenchTM QSTM Quiet SeriesTM SuperSOTTM-3 SuperSOTTM-6 SuperSOTTM-8 TinyLogicTM DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. LIFE SUPPORT POLICY FAIRCHILD'S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or 2. A critical component is any component of a life support device or system whose failure to perform can systems which, (a) are intended for surgical implant into be reasonably expected to cause the failure of the life the body, or (b) support or sustain life, or (c) whose support device or system, or to affect its safety or failure to perform when properly used in accordance with instructions for use provided in the labeling, can be effectiveness. reasonably expected to result in significant injury to the user. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Definition Advance Information Formative or In Design This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Preliminary First Production This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. No Identification Needed Full Production This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only.