V
RRM
= 600 V -1000 V
I
O
= 8 A
Features
GBU Package
Mechanical Data
Parameter Symbol GBU8J GBU8K Unit
Repetitive peak reverse voltage V
RRM
600 800 V
RMS reverse volta
eV
420 560 V
Terminals: Plated leads, solderable per MIL-STD-750 Method 2026.
• Glass passivated chip junction
• Plastic package has Underwriters Laboratory
Flammability Classification 94V-0
• Not ESD Sensitive
GBU8J thru GBU8M
Single Phase Glass Passivated Silicon
Brid
e Rectifier
• High case dielectric strength of 1500 V
RMS
• High surge overload rating
1000
700
GBU8M
Maximum ratings at Tc
= 25 °C, unless otherwise specified
Mounting position: Any
Conditions
• Ideal for printed circuit boards
Case: Molded plastic body over passivated junctions
• High temperature soldering guaranteed: 260⁰C/ 10
seconds, 0.375 (9.5mm) lead length
DC blocking voltage V
DC
600 800 V
Operating temperature T
j
-55 to 150 -55 to 150 °C
Storage temperature T
stg
-55 to 150 -55 to 150 °C
Parameter Symbol GBU8J GBU8K Unit
Maximum average forward rectified
current
1,2
I
O
8.0 8.0 A
Peak forward surge current I
FSM
200 200 A
Maximum instantaneous forward
voltage drop per leg 1.1 1.1
55
500 500
Rating for fusing I
t166 166
sec
Typical junction capacitance per leg
3
C
j
94 94 pF
R
ΘJA
21 21
R
ΘJL
2.2 2.2 °C/W
1
- Device mounted on 82 mm x 82 mm x 3 mm Al plate heatsink
- Measured at 1.0 MHz and applied reverse bias of 4.0 V
2
- Recommended mounted position is to bolt down device on a heatsink with silicon thermal
compond for maximum heat transfer using #6 screw.
Maximum DC reverse current at
rated DC blocking voltage per leg I
R
V
F
t < 8.3 ms
Typical thermal resistance per leg
1,2
21
166
Conditions
-55 to 150
I
F
= 8 A
μA
1000
T
a
= 25 °C
94
5
GBU8M
T
a
= 125 °C
1.1
V
Electrical characteristics at Tc = 25 °C, unless otherwise specified
500
Single phase, half sine wave, 60 Hz, resistive or inductive load.
For capacitive load derate current by 20%.
2.2
T
c
= 100 °C 8.0
t
p
= 8.3 ms, half sine 200
-55 to 150
www.genesicsemi.com/silicon-products/bridge-rectifiers/
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