IXTA152N085T7 - IXYS - Pdf.Support

Symbol Test Conditions Maximum Ratings

VDSS TJ= 25°C to 175°C85V

VDGR TJ= 25°C to 175°C; RGS = 1 MΩ85 V

VGSM Transient ± 20 V

ID25 TC= 25°C 152 A

ILRMS Lead Current Limit, RMS 120 A

IDM TC= 25°C, pulse width limited by TJM 410 A

IAR TC= 25°C25A

EAS TC= 25°C 750 mJ

dv/dt IS≤ I

DM, di/dt ≤ 100 A/µs, VDD ≤ V

DSS 3 V/ns

TJ≤ 175°C, RG = 5 Ω

PDTC= 25°C 360 W

TJ-55 ... +175 °C

TJM 175 °C

Tstg -55 ... +175 °C

TL1.6 mm (0.062 in.) from case for 10 s 300 °C

TSOLD Plastic body for 10 seconds 260 °C

Weight 3g

Symbol Test Conditions Characteristic Values

(TJ = 25°C unless otherwise specified) Min. Typ. Max.

BVDSS VGS = 0 V, ID = 250 µA85V

VGS(th) VDS = VGS, ID = 250 µA 2.0 4.0 V

IGSS VGS = ± 20 V, VDS = 0 V ± 200 nA

IDSS VDS = VDSS 5µA

VGS = 0 V TJ = 150°C 250 µA

RDS(on) VGS = 10 V, ID = 25 A, Notes 1 5.5 7.0 m Ω

TrenchMVTM

Power MOSFET

Preliminary Technical Information

N-Channel Enhancement Mode

Avalanche Rated

IXTA152N085T7 VDSS =85 V

ID25 = 152 A

RDS(on) ≤≤

≤≤

≤7.0 m ΩΩ

ΩΩ

Ω

TO-263 (7-lead) (IXTA..7)

Pin-out:1 - Gate

2, 3 - Source

4 - NC (cut)

5,6,7 - Source

TAB (8) - Drain

1

7

(TAB)

Features

Ultra-low On Resistance

Unclamped Inductive Switching (UIS)

rated

Low package inductance

- easy to drive and to protect

175 °C Operating Temperature

Advantages

Easy to mount

Space savings

High power density

Applications

Automotive

- Motor Drives

- 42V Power Bus

- ABS Systems

 DC/DC Converters and Off-line UPS

Primary Switch for 24V and 48V

Systems

 High Current Switching

Applications

IXYS reserves the right to change limits, test conditions, and dimensions.

IXTA152N085T7

Symbol Test Conditions Characteristic Values

(TJ = 25°C unless otherwise specified) Min. Typ. Max.

gfs VDS= 10 V; ID = 60 A, Note 1 60 100 S

Ciss 5500 pF

Coss VGS = 0 V, VDS = 25 V, f = 1 MHz 720 pF

Crss 150 pF

td(on) Resistive Switching Times 30 ns

trVGS = 10 V, VDS = 0.5 VDSS, ID = 25 A 50 ns

td(off) RG = 5 Ω (External) 50 ns

tf45 ns

Qg(on) 114 nC

Qgs VGS= 10 V, VDS = 0.5 VDSS, ID = 25 A 30 nC

Qgd 35 nC

RthJC 0.42°C/W

Source-Drain Diode

Symbol Test Conditions Characteristic Values

TJ = 25°C unless otherwise specified) Min. Typ. Max.

ISVGS = 0 V 152 A

ISM Pulse width limited by TJM 410 A

VSD IF = 25 A, VGS = 0 V, Note 1 1.0 V

trr IF = 25 A, -di/dt = 100 A/µs90ns

VR = 40 V, VGS = 0 V

Notes: 1. Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 %.

Pins: 1 - Gate

2, 3 - Source

4 - Drain

5,6,7 - Source

Tab (8) - Drain

TO-263 (7-lead) (IXTA...7) Outline

IXYS MOSFETs and IGBTs are covered by 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2

one or moreof the following U.S. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405B2 6,759,692 7,063,975 B2

4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6771478 B2 7,071,537

PRELIMINARY TECHNICAL INFORMATION

The product presented herein is under development. The Technical Specifications

offered are derived from data gathered during objective characterizations of preliminary

engineering lots; but also may yet contain some information supplied during a pre-

production design evaluation. IXYS reserves the right to change limits, test conditions,

and dimensions without notice.

IXTA152N085T7

Fig. 1. Output Characteristics

@ 25ºC

0

20

40

60

80

100

120

140

160

0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1 1.1

V

DS

- Volts

I

D

- Amperes

V

GS

= 10V

9V

8V

6V

7V

5V

Fig. 2. Extended Output Characteristics

@ 25ºC

0

30

60

90

120

150

180

210

240

270

300

012345678

V

DS

- Volts

I

D

- Amperes

V

GS

= 10V

9V

8V

6V

7V

5V

Fig. 3. Output Characteristics

@ 150ºC

0

20

40

60

80

100

120

140

160

0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 2 2.2 2.4

V

DS

- Volts

I

D

- Amperes

V

GS

= 10V

9V

8V

6V

5V

7V

Fig. 4. R

DS(on)

Normalized to I

D

= 76A Value

vs. Junction Temperature

0.6

0.8

1.0

1.2

1.4

1.6

1.8

2.0

2.2

2.4

2.6

-50 -25 0 25 50 75 100 125 150 175

T

J

- Degrees Centigrade

R

DS(on)

- Normalized

V

GS

= 10V

I

D

= 152A

I

D

= 76A

Fig. 5. R

DS(on)

Normalized to I

D

= 76A Value

vs. Drain Current

0.8

1

1.2

1.4

1.6

1.8

2

2.2

2.4

2.6

2.8

3

0 50 100 150 200 250 300

I

D

- Amperes

R

DS(on)

- Normalized

V

GS

= 10V

15V - - - -

T

J

= 175ºC

T

J

= 25ºC

Fig. 6. Drain Current vs. Case Temperature

0

20

40

60

80

100

120

140

-50 -25 0 25 50 75 100 125 150 175

T

C

- Degrees Centigrade

I

D

- Amperes

External Lead Current Limit for TO-263 (7-Lead)

External Lead Current Limit for TO-3P, TO-220, & TO-263

IXYS reserves the right to change limits, test conditions, and dimensions.

IXTA152N085T7

Fig. 7. Input Admittance

0

30

60

90

120

150

180

210

240

270

3.5 4 4.5 5 5.5 6 6.5 7

V

GS

- Volts

I

D

- Amperes

T

J

= -40ºC

25ºC

150ºC

Fig. 8. Transconductance

0

20

40

60

80

100

120

140

0 40 80 120 160 200 240

I

D

- Amperes

g

f s

- Siemens

T

J

= - 40ºC

25ºC

150ºC

Fig. 9. Forward Voltage Drop of

Intrinsic Diode

0

40

80

120

160

200

240

280

0.4 0.5 0.6 0.7 0.8 0.9 1 1.1 1.2 1.3

V

SD

- Volts

I

S

- Amperes

T

J

= 150ºC

T

J

= 25ºC

Fig. 10. Gate Charge

0

1

2

3

4

5

6

7

8

9

10

0 102030405060708090100110120

Q

G

- NanoCoulombs

V

GS

- Volts

V

DS

= 43V

I

D

= 25A

I

G

= 10mA

Fig. 11. Capacitance

100

1,000

10,000

0 5 10 15 20 25 30 35 40

V

DS

- Volts

Capacitance - PicoFarad

s

f

= 1 MHz

Ciss

Crss

Coss

Fig. 12. Maximum Transient Thermal

Impedance

0.01

0.10

1.00

0.0001 0.001 0.01 0.1 1 10

Pulse Width - Seconds

Z

(th)JC

- ºC / W

IXTA152N085T7

Fig. 14. Resistive Turn-on

Rise Time vs. Drain Current

10

15

20

25

30

35

40

45

50

55

60

24 26 28 30 32 34 36 38 40 42 44 46 48 50

I

D

- Amperes

t

r

- Nanoseconds

R

G

= 5Ω

V

GS

= 10V

V

DS

= 43V

T

J

= 125ºC

T

J

= 25ºC

Fig. 15. Resistive Turn-on

Switching Times vs. Gate Resistance

10

20

30

40

50

60

70

80

90

100

110

4 6 8 10 12 14 16 18 20

R

G

- Ohms

t r

- Nanoseconds

23

25

27

29

31

33

35

37

39

41

43

t

d ( o n ) - Nanoseconds

t

r

t

d(on)

- - - -

T

J

= 125ºC, V

GS

= 10V

V

DS

= 43V

I

D

= 50A

I

D

= 25A

Fig. 16. Resistive Turn-off

Switching Times vs. Junction Temperature

40

41

42

43

44

45

46

47

25 35 45 55 65 75 85 95 105 115 125

T

J

- Degrees Centigrade

t

f - Nanoseconds

48

52

56

60

64

68

72

76

t

d ( o f f )

- Nanoseconds

t f

td(off)

- - - -

R

G

= 5Ω, V

GS

= 10V

V

DS

= 43V

I

D

= 25A

I

D

= 50A

Fig. 17. Resistive Turn-off

Switching Times vs. Drain Current

39

40

41

42

43

44

45

46

24 28 32 36 40 44 48

I

D

- Amperes

t

f - Nanoseconds

45

50

55

60

65

70

75

80

t

d ( o f f )

- Nanoseconds

t

f

t

d(off)

- - - -

R

G

= 5Ω, V

GS

= 10V

V

DS

= 43V

T

J

= 125ºC

T

J

= 25ºC

T

J

= 25ºC

T

J

= 125ºC

Fig. 13. Resistive Turn-on

Rise Time vs. Junction Temperature

10

15

20

25

30

35

40

45

50

55

60

25 35 45 55 65 75 85 95 105 115 125

T

J

- Degrees Centigrade

t

r

- Nanoseconds

R

G

= 5Ω

V

GS

= 10V

V

DS

= 43V

I

D

= 50A

I

D

= 25A

Fig. 18. Resistive Turn-off

Switching Times vs. Gate Resistance

30

40

50

60

70

80

90

100

110

120

130

4 6 8 101214161820

R

G

- Ohms

t f

- Nanoseconds

20

40

60

80

100

120

140

160

180

200

220

t

d ( o f f ) - Nanoseconds

t

f

t

d(off)

- - - -

T

J

= 125ºC, V

GS

= 10V

V

DS

= 43V

I

D

= 50A

I

D

= 25A

IXYS REF: T_152N085T (4V) 6-12-06.xls