BFT 92 PNP Silicon RF Transistor 3 For broadband amplifiers up to 2 GHz at collector currents up to 20 mA Complementary type: BFR 92P (NPN) 2 1 VPS05161 ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking BFT 92 W1s Pin Configuration 1=B 2=E Package 3=C SOT-23 Maximum Ratings Parameter Symbol Collector-emitter voltage VCEO 15 Collector-emitter voltage VCES 20 Collector-base voltage VCBO 20 Emitter-base voltage VEBO 2 Collector current IC 25 Base current IB 3 Total power dissipation, TS 78 C 1) Ptot 200 mW Junction temperature Tj 150 C Ambient temperature TA -65 ... 150 Storage temperature Tstg -65 ... 150 Value Unit V mA Thermal Resistance Junction - soldering point RthJS 360 K/W 1T is measured on the collector lead at the soldering point to the pcb S 1 Oct-25-1999 BFT 92 Electrical Characteristics at TA = 25C, unless otherwise specified. Parameter Symbol Values Unit min. typ. max. 15 - - V ICBO - - 100 nA IEBO - - 10 A hFE 15 50 - DC Characteristics Collector-emitter breakdown voltage V(BR)CEO IC = 1 mA, IB = 0 Collector-base cutoff current VCB = 10 V, IE = 0 Emitter-base cutoff current VEB = 2 V, IC = 0 DC current gain - IC = 15 mA, VCE = 8 V 2 Oct-25-1999 BFT 92 Electrical Characteristics at TA = 25C, unless otherwise specified. Parameter Symbol Values Unit min. typ. max. 3.5 5 - Ccb - 0.54 0.8 Cce - 0.25 - Ceb - 0.77 - AC characteristics (verified by random sampling) Transition frequency fT GHz IC = 15 mA, VCE = 8 V, f = 500 MHz Collector-base capacitance pF VCB = 10 V, f = 1 MHz Collector-emitter capacitance VCE = 10 V, f = 1 MHz Emitter-base capacitance VEB = 0.5 V, f = 1 MHz Noise figure dB F IC = 2 mA, VCE = 8 V, ZS = ZSopt , f = 900 MHz - 2 - f = 1.8 GHz - 3.2 - f = 900 MHz - 13.5 - f = 1.8 GHz - 8 - - 11.5 - - 6 - Power gain, maximum available F) Gma IC = 15 mA, VCE = 8 V, ZS = ZSopt, ZL = ZLopt , |S21e|2 Transducer gain IC = 15 mA, VCE = 8 V, ZS = ZL = 50 , f = 900 MHz f = 1.8 GHz 1G ma = |S21 / S12 | (k-(k2-1)1/2 ) 3 Oct-25-1999 BFT 92 SPICE Parameters (Gummel-Poon Model, Berkley-SPICE 2G.6 Syntax) : Transistor Chip Data IS = 4.5354 fA BF = 98.533 - NF = 0.90551 - VAF = 10.983 V IKF = 0.016123 A ISE = 12.196 fA NE = 1.1172 - BR = 10.297 - NR = 1.2703 - VAR = 47.577 V IKR = 0.019729 A ISC = 0.024709 fA NC = 1.206 - RB = 7.9562 IRB = 0.79584 mA RBM = 1.5939 RE = 1.5119 RC = 0.66749 CJE = 1.7785 fF VJE = 0.79082 V MJE = 0.32167 - TF = 32.171 ps XTF = 0.30227 - VTF = 0.21451 V ITF = 0.013277 mA PTF = 0 deg CJC = 922.07 fF VJC = 1.2 V MJC = 0.3 - XCJC = 0.3 - TR = 2.0779 ns CJS = 0 fF VJS = 0.75 V MJS = 0 - XTB = 0 - EG = 1.11 eV XTI = 3 - FC = 0.75167 - TNOM 300 K L BI = 0.85 nH L BO = 0.51 L EI = 0.69 L EO = 0.61 L CI = 0 L CO = 0.49 C BE = - C CB = 84 C CE = 165 All parameters are ready to use, no scaling is necessary. Extracted on behalf of SIEMENS Small Signal Semiconductors by: Institut fur Mobil-und Satellitentechnik (IMST) 1996 SIEMENS AG Package Equivalent Circuit: fF Valid up to 6GHz For examples and ready to use parameters please contact your local Infineon Technologies distributor or sales office to obtain a Infineon Technologies CD-ROM or see Internet: http://www.infineon.com/products/discrete/index.htm 4 Oct-25-1999 BFT 92 Total power dissipation Ptot = f (TA *, TS ) * Package mounted on epoxy 300 P tot mW 200 TS 150 TA 100 50 0 0 20 40 60 80 100 120 C 150 TA,TS Permissible Pulse Load RthJS = f (tp ) Permissible Pulse Load Ptotmax/P totDC = f (tp) 10 2 Ptotmax / PtotDC 10 3 RthJS K/W 10 2 - D=0 0.005 0.01 0.02 0.05 0.1 0.2 0.5 10 1 0.5 0.2 0.1 0.05 0.02 0.01 0.005 D=0 10 1 -7 10 10 -6 10 -5 10 -4 10 -3 10 -2 s 10 10 0 -7 10 0 tp 10 -6 10 -5 10 -4 10 -3 10 -2 s 10 0 tp 5 Oct-25-1999 BFT 92 Collector-base capacitance Ccb = f (VCB ) Transition frequency f T = f (I C) f = 1MHz V CE = Parameter 1.6 6.0 GHz 10V pF 5.0 4.5 5V 4.0 fT Ccb 1.2 8V 1.0 0.8 3.5 3V 3.0 2V 2.5 0.6 1V 2.0 0.4 0.7V 1.5 1.0 0.2 0.5 0.0 0 4 8 12 16 V 0.0 0 22 5 10 15 mA 20 VCB IC Power Gain Gma , Gms = f(IC ) Power Gain Gma, Gms = f(I C) f = 0.9GHz f = 1.8GHz VCE = Parameter VCE = Parameter 16 8.5 5V 10V 7.0 8V 5V 12 3V G 10 8 1V 6 0.7V 3V 6.0 2V G 10V dB dB 30 2V 5.0 4.0 1V 3.0 4 2.0 0.7V 2 0 0 1.0 5 10 15 20 mA 0.0 0 30 IC 5 10 15 20 mA 30 IC 6 Oct-25-1999 BFT 92 Power Gain Gma , Gms = f(VCE):_____ Intermodulation Intercept Point IP3=f(IC) |S21|2 = f(VCE):--------- (3rd order, Output, ZS=ZL=50 ) VCE = Parameter, f = 900MHz f = Parameter 16 28 IC=15mA dB 0.9GHz 0.9GHz IP 3 12 G 8V dBm 10 24 3V 22 2V 20 18 1.8GHz 8 1V 16 1.8GHz 14 6 12 4 10 8 2 6 0 0 2 4 6 V 8 4 0 12 4 8 12 16 20 VCE mA 28 IC Power Gain |S21|2= f(f) Power Gain Gma , Gms = f(f) V CE = Parameter VCE = Parameter 30 26 IC=15mA dB IC =15mA 22 dB 20 18 G S21 20 16 14 15 12 10 8 10 6 5 0 0.0 0.5 1.0 1.5 2.0 2.5 10V 4 2V 2 1V 0.7 0 GHz -2 0.0 3.5 f 10V 0.7V 0.5 1.0 1.5 2.0 2V 2.5 GHz 3.5 f 7 Oct-25-1999