BLU6H0410LS-600P,1 - NXP Semiconductors

1. Product profile

1.1 General description

A 600 W LDMOS RF power transistor for radar transmitter applications and industrial

applications in the frequency range of 400 MHz to 900 MHz.

[1] Measured at  = 10 %; tp = 1 ms.

1.2 Features and benefits

Excellent ruggedness (VSWR  40 : 1 through all phases)

Optimum thermal behavior and reliability, Rth(j-c) = 0.15 K/W

High power gain

High efficiency

Internal input matching for high gain and optimum broadband operation

Excellent reliability

Easy power control

Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances

(RoHS)

1.3 Applications

Power amplifier for radar transmitter applications in the 400 MHz to 900 MHz

frequency range

BLU6H0410L-600P;

BLU6H0410LS-600P

Power LDMOS transistor

Rev. 3 — 1 September 2015 Product data sheet

Table 1. Application information

Typical RF performance at V DS = 50 V; in a common source 860 MHz narrowband test circuit;

unless otherwise specified.

Test signal f IDq PL(AV) PL(M) GpDIMD3

(MHz) (mA) (W) (W) (dB) (%) (dBc)

pulsed, class-AB [1] 860 1.3 - 600 20 58 -

Product data sheet Rev. 3 — 1 September 2015 2 of 15

BLU6H0410L(S)-600P

Power LDMOS transistor

2. Pinning information

[1] Connected to flange.

3. Ordering information

4. Limiting values

Table 2. Pinning

Pin Description Simplified outline Graphic symbol

BLU6H0410L-600P (SOT539A)

1drain1

2drain2

3gate1

4gate2

5source [1]

BLU6H0410LS-600P (SOT539B)

1drain1

2drain2

3gate1

4gate2

5source [1]

2sym117

Table 3. Ordering information

Type number Package

Name Description Version

BLU6H0410L-600P - flanged balanced LDMOST ceramic package;

2 mounting holes; 4 leads

SOT539A

BLU6H0410LS-600P - earless flanged balanced LDMOST ceramic

package; 4 leads

SOT539B

Table 4. Limiting values

In accordance with the Absolute Maximum Rating System (IEC 60134).

Symbol Parameter Conditions Min Max Unit

VDS drain-source voltage - 110 V

VGS gate-source voltage 0.5 +11 V

Tstg storage temperature 65 +150 C

Tjjunction temperature - 200 C

Product data sheet Rev. 3 — 1 September 2015 3 of 15

BLU6H0410L(S)-600P

Power LDMOS transistor

5. Thermal characteristics

[1] Rth(j-c) is measured under RF conditions.

6. Characteristics

[1] ID is the drain current.

[2] Capacitance values without internal matching.

Table 5. Thermal characteristics

Symbol Parameter Conditions Typ Unit

Rth(j-c) thermal resistance from junction to case Tj= 150 C[1] 0.15 K/W

Zth(j-c) transient thermal impedance from

junction to case

Tj= 150 C

tp = 100 s; = 10 % 0.020 K/W

tp = 200 s; = 10 % 0.023 K/W

tp = 300 s; = 10 % 0.025 K/W

tp = 500 s; = 10 % 0.028 K/W

tp = 100 s; = 20 % 0.035 K/W

Table 6. DC characteristics

Tj=25



C; per section unless otherwise specified.

Symbol Parameter Conditions Min Typ Max Unit

V(BR)DSS drain-source breakdown voltage VGS =0V; I

D= 2.4 mA [1] 110 - - V

VGS(th) gate-source threshold voltage VDS =10 V; I

D= 240 mA [1] 1.4 1.9 2.4 V

IDSS drain leakage current VGS =0V; V

DS =50V - - 2.8 A

IDSX drain cut-off current VGS =V

GS(th) +3.75 V;

VDS =10V

-36- A

IGSS gate leakage current VGS =10V; V

DS = 0 V - - 280 nA

RDS(on) drain-source on-state resistance VGS =V

GS(th) +3.75 V;

ID=8.5A

[1] -143- m

Ciss input capacitance VGS = 0 V; VDS =50V;

f=1MHz

[2] -220- pF

Coss output capacitance VGS = 0 V; VDS =50V;

f=1MHz

-74- pF

Crss reverse transfer capacitance VGS = 0 V; VDS =50V;

f=1MHz

-1.2- pF

Product data sheet Rev. 3 — 1 September 2015 4 of 15

BLU6H0410L(S)-600P

Power LDMOS transistor

[1] IDq for total device.

6.1 Ruggedness in class-AB operation

The BLU6H0410L-600P and BLU6H0410LS-600P are capable of withstanding a load

mismatch corresponding to VSWR  40 : 1 through all phases under the following

conditions: VDS = 50 V; f = 860 MHz at rated power.

Table 7. RF characteristics

Test signal: 2-Tone; Tcase =25



C unless otherwise specified; in a class-AB Ampleon production

narrowband test circuit.

Symbol Parameter Conditions Min Typ Max Unit

VDS drain-source voltage - 50 - V

IDq quiescent drain current [1] -1.3- A

PL(AV) average output power f1= 860 MHz;

f2=860.1MHz

250 - - W

Gppower gain f1= 860 MHz;

f2=860.1MHz

20 21 - dB

Ddrain efficiency f1= 860 MHz;

f2=860.1MHz

42 46 - %

IMD3 third-order intermodulation distortion f1= 860 MHz;

f2=860.1MHz

-32 28 dBc

VGS = 0 V; f = 1 MHz.

Fig 1. Output capacitance as a function of drain-source voltage; typical values per

section

001aam579

VDS (V)

0604020

200

100

300

400

Coss

(pF)

Product data sheet Rev. 3 — 1 September 2015 5 of 15

BLU6H0410L(S)-600P

Power LDMOS transistor

7. Application information

7.1 Narrowband RF figures

7.1.1 2-Tone

7.2 Impedance information

VDS = 50 V; IDq = 1.3 A; measured in a common source

narrowband 860 MHz test circuit.

VDS = 50 V; IDq = 1.3 A; measured in a common source

narrowband 860 MHz test circuit.

Fig 2. 2-Tone power gain and drain efficiency as

function of load power; typical values

Fig 3. 2-Tone power gain and third order

intermodulation distortion as function of

load power; typical values

PL(AV) (W)

0 500400200 300100

001aan761

(dB)

ηD

(%)

ηD

PL(AV) (W)

0 500400200 300100

001aan762

(dB)

IMD3

(dBc)

-40

-20

-60

IMD3

Fig 4. Definition of transistor impedance

Table 8. Typical push-pull impedance

Simulated Zi and ZL device impedance; impedance info at VDS = 50 V and PL(M) = 600 W.

f ZiZL

MHz  

300 0.617  j1.715 4.989 + j1.365

325 0.635  j1.355 4.867 + j1.424

350 0.655  j1.026 4.741 + j1.472

375 0.677  j0.721 4.614 + j1.511

001aan207

gate 1

gate 2

drain 2

drain 1

ZiZL

Product data sheet Rev. 3 — 1 September 2015 6 of 15

BLU6H0410L(S)-600P

Power LDMOS transistor

400 0.702  j0.435 4.486 + j1.540

425 0.731  j0.164 4.357 + j1.559

450 0.762 + j0.096 4.228 + j1.570

475 0.798 + j0.347 4.100 + j1.573

500 0.839 + j0.592 4.974 + j1.567

525 0.884 + j0.833 3.850 + j1.554

550 0.936 + j1.072 3.728 + j1.534

575 0.995 + j1.310 3.608 + j1.508

600 1.063 + j1.549 3.492 + j1.475

625 1.141 + j1.791 3.378 + j1.437

650 1.230 + j2.037 3.268 + j1.394

675 1.334 + j2.289 3.161 + j1.347

700 1.456 + j2.548 3.057 + j1.295

725 1.599 + j2.814 2.957 + j1.239

750 1.768 + j3.090 2.860 + j1.180

775 1.971 + j3.376 2.676 + j1.118

800 2.214 + j3.671 2.677 + j1.053

825 2.510 + j3.975 2.591 + j0.985

850 2.873 + j4.282 2.508 + j0.915

875 3.320 + j4.584 2.428 + j0.843

900 3.875 + j4.865 2.351 + j0.770

925 4.562 + j5.095 2.277 + j0.695

950 5.409 + j5.223 2.206 + j0.618

975 6.426 + j5.166 2.138 + j0.540

1000 7.587 + j4.807 2.073 + j0.461

Table 8. Typical push-pull impedance …continued

Simulated Zi and ZL device impedance; impedance info at VDS = 50 V and PL(M) = 600 W.

f ZiZL

MHz  

Product data sheet Rev. 3 — 1 September 2015 7 of 15

BLU6H0410L(S)-600P

Power LDMOS transistor

8. Test information

[1] American technical ceramics type 800R or capacitor of same quality.

[2] American technical ceramics type 800B or capacitor of same quality.

[3] American technical ceramics type 180R or capacitor of same quality.

[4] American technical ceramics type 100A or capacitor of same quality.

[5] Printed-Circuit Board (PCB): Taconic RF35; r = 3.5 F/m; height = 0.762 mm; Cu (top/bottom metallization);

thickness copper plating = 35 m.

Table 9. List of components

For test circuit, see Figure 5, Figure 6 and Figure 7.

Component Description Value Remarks

B1, B2 semi rigid coax 25 ; 49.5 mm UT-090C-25 (EZ 90-25)

C1 multilayer ceramic chip capacitor 12 pF [1]

C2, C3, C4, C5,

multilayer ceramic chip capacitor 8.2 pF [1]

C7 multilayer ceramic chip capacitor 6.8 pF [2]

C8 multilayer ceramic chip capacitor 2.7 pF [2]

C9 multilayer ceramic chip capacitor 2.2 pF [2]

C10, C13, C14 multilayer ceramic chip capacitor 100 pF [3]

C11, C12 multilayer ceramic chip capacitor 10 pF [2]

C15, C16 multilayer ceramic chip capacitor 4.7 F; 50 V Kemet C1210X475K5RAC-TU or

capacitor of same quality.

C17, C18, C23,

C24

multilayer ceramic chip capacitor 100 pF [2]

C19, C20 multilayer ceramic chip capacitor 10 F; 50 V TDK C570X7R1H106KT000N or

capacitor of same quality.

C21, C22 electrolytic capacitor 470 F; 63 V

C30 multilayer ceramic chip capacitor 10 pF [4]

C31 multilayer ceramic chip capacitor 9.1 pF [4]

C32 multilayer ceramic chip capacitor 3.9 pF [4]

C33, C34, C35 multilayer ceramic chip capacitor 100 pF [4]

C36, C37 multilayer ceramic chip capacitor 4.7 F; 50 V TDK C4532X7R1E475MT020U or

capacitor of same quality.

L1 microstrip - [5] (W  L) 15 mm  13 mm

L2 microstrip - [5] (W  L) 5 mm  26 mm

L3, L32 microstrip - [5] (W  L) 2 mm  49.5 mm

L4 microstrip - [5] (W  L) 1.7 mm  3.5 mm

L5 microstrip - [5] (W  L) 2 mm  9.5 mm

L30 microstrip - [5] (W  L) 5 mm  13 mm

L31 microstrip - [5] (W  L) 2 mm  11 mm

L33 microstrip - [5] (W  L) 2 mm  3 mm

R1, R2 wire resistor 10 

R3, R4 SMD resistor 5.6 0805

R5, R6 wire resistor 100 

R7, R8 potentiometer 10 k

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Product data sheet Rev. 3 — 1 September 2015 8 of 15

BLU6H0410L(S)-600P

Power LDMOS transistor

See Table 9 for a list of components.

Fig 5. Class-AB common source broadband amplifier; VD1(test), VD2(test), VG1(test) and VG2(test) are drain and gate test voltages

+VG1(test)

+VD1(test)

+VD2(test)

C32

C31 C30

C19

C20

C15

C10 50 Ω

50 Ω L4

C21

C22

C13

C16

C14

C9C7C6C4

C8C5

+VG2(test)

L30 L1

L31

C34

C36

C33

C37

L33

C35

L32

C11

C12

C17

C18

001aan763

C23

C24

Product data sheet Rev. 3 — 1 September 2015 9 of 15

BLU6H0410L(S)-600P

Power LDMOS transistor

See Table 9 for a list of components.

Fig 6. Printed-Circuit Board (PCB) for class-AB common source amplifier

50 mm

001aam588

105 mm

L33

L32

L31

L30

L31

See Table 9 for a list of components.

Fig 7. Component layout for class-AB common source amplifier

6.3 mm

4 mm

+VG2(test) +VD2(test)

+VD1(test)

+VG1(test)

001aan764

C37

C35

C34 C32 C30

C31

C36

C17

C19

C11

C12

C7 C9

C21

C23

C24

C22

C20

C18

C15

C13

C14

C16

C33

50 Ω

C10

50 Ω

49.6 mm

36.8 mm

26.3 mm

25.3 mm

44 mm

Product data sheet Rev. 3 — 1 September 2015 10 of 15

BLU6H0410L(S)-600P

Power LDMOS transistor

9. Package outline

Fig 8. Package outline SOT539A

REFERENCES

OUTLINE

VERSION

EUROPEAN

PROJECTION ISSUE DATE

IEC JEDEC EIAJ

SOT539A 12-05-02

10-02-02

0 5 10 mm

scale

w1AB

M M M

M M

w2C

UNIT A

11.81

11.56

0.18

0.10

31.55

30.94 13.72 9.53

9.27

17.12

16.10

10.29

10.03

4.7

4.2

ce U2

0.250.25 0.51

35.56

1.75

1.50

41.28

41.02

25.53

25.27

3.30

3.05

2.26

2.01

9.50

9.30

inches 0.465

0.455

0.007

0.004

1.242

1.218

31.52

30.96

1.241

1.219 0.540 0.375

0.365

0.674

0.634

0.405

0.395

0.185

0.165 0.0100.010 0.0201.400

0.069

0.059

1.625

1.615

1.005

0.995

0.130

0.120

0.089

0.079

0.374

0.366

3.48

2.97

0.137

0.117

DIMENSIONS (millimetre dimensions are derived from the original inch dimensions)

Flanged balanced ceramic package; 2 mounting holes; 4 leads SOT539A

Note

1. millimeter dimensions are derived from the original inch dimensions.

2. recommended screw pitch dimension of 1.52 inch (38.6 mm) based on M3 screw.

Product data sheet Rev. 3 — 1 September 2015 11 of 15

BLU6H0410L(S)-600P

Power LDMOS transistor

Fig 9. Package outline SOT539B

References

Outline

version

European

projection Issue date

IEC JEDEC JEITA

SOT539B

sot539b_po

12-05-02

13-05-24

Unit(1)

max

nom

min

4.7

4.2

11.81

11.56

31.55

30.94

31.52

30.96

9.5

9.3

9.53

9.27

1.75

1.50

17.12

16.10

3.48

2.97

10.29

10.03

0.25

Dimensions

Earless flanged balanced ceramic package; 4 leads SOT539B

0.18

0.10

1EE

13.72

FHH

25.53

25.27

2.26

2.01

32.39

32.13

U2w2

0.25

inches

max

nom

min

0.185

0.165

0.465

0.455

1.242

1.218

1.241

1.219

0.374

0.366

0.375

0.365

0.069

0.059

0.674

0.634

0.137

0.117

0.405

0.395

0.01

0.007

0.004

0.54

1.005

0.995

0.089

0.079

1.275

1.265

0.01

0 5 10 mm

scale

Dw2

1 2

3 4

Note

1. millimeter dimensions are derived from the original inch dimensions.

Product data sheet Rev. 3 — 1 September 2015 12 of 15

BLU6H0410L(S)-600P

Power LDMOS transistor

10. Handling information

11. Abbreviations

12. Revision history

CAUTION

This device is sensitive to ElectroStatic Discharge (ESD). Observe precautions for handling

electrostatic sensitive devices.

Such precautions are described in the ANSI/ESD S20.20, IEC/ST 61340-5, JESD625-A or

equivalent standards.

Table 10. Abbreviations

Acronym Description

LDMOS Laterally Diffused Metal-Oxide Semiconductor

LDMOST Laterally Diffused Metal-Oxide Semiconductor Transistor

RF Radio Frequency

SMD Surface Mounted Device

VSWR Voltage Standing-Wave Ratio

Table 11. Revision history

Document ID Release

date

Data sheet

status

Change

notice

Supersedes

BLU6H0410L-600P_6H0410LS-600P#3 20150901 Product

data sheet

BLU6H0410L-600P_6H0410LS-600P v.2

Modifications: •The format of this document has been redesigned to comply with the new

identity guidelines of Ampleon.

•Legal texts have been adapted to the new company name where

appropriate.

BLU6H0410L-600P_6H0410LS-600P v.2 20130712 Product

data sheet

- BLU6H0410L-600P_6H0410LS-600P v.1

BLU6H0410L-600P_6H0410LS-600P v.1 20120426 Product

data sheet

Product data sheet Rev. 3 — 1 September 2015 13 of 15

BLU6H0410L(S)-600P

Power LDMOS transistor

13. Legal information

13.1 Data sheet status

[1] Please consult the most recently issued document before initiating or completing a design.

[2] The term ‘short data sheet’ is explained in section “Definitions”.

[3] The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status

information is available on the Internet at URL http://www.ampleon.com.

13.2 Definitions

Draft — The document is a draft version only. The content is still under

internal review and subject to formal approval, which may result in

modifications or additions. Ampleon does not give any representations or

warranties as to the accuracy or completeness of information included herein

and shall have no liability for the consequences of use of such information.

Short data sheet — A short data sheet is an extract from a full data sheet

with the same product type number(s) and title. A short data sheet is intended

for quick reference only and should not be relied upon to contain detailed and

full information. For detailed and full information see the relevant full data

sheet, which is available on request via the local Ampleon sales office. In

case of any inconsistency or conflict with the short data sheet, the full data

sheet shall prevail.

Product specification — The information and data provided in a Product

data sheet shall define the specification of the product as agreed between

Ampleon and its customer, unless Ampleon and customer have explicitly

agreed otherwise in writing. In no event however, shall an agreement be valid

in which the Ampleon product is deemed to offer functions and qualities

beyond those described in the Product data sheet.

13.3 Disclaimers

Limited warranty and liability — Information in this document is believed to

be accurate and reliable. However, Ampleon does not give any

representations or warranties, expressed or implied, as to the accuracy or

completeness of such information and shall have no liability for the

consequences of use of such information. Ampleon takes no responsibility for

the content in this document if provided by an information source outside of

Ampleon.

In no event shall Ampleon be liable for any indirect, incidental, punitive,

special or consequential damages (including - without limitation - lost profits,

lost savings, business interruption, costs related to the removal or

replacement of any products or rework charges) whether or not such

damages are based on tort (including negligence), warranty, breach of

contract or any other legal theory.

Notwithstanding any damages that customer might incur for any reason

whatsoever, Ampleon’ aggregate and cumulative liability towards customer

for the products described herein shall be limited in accordance with the

Terms and conditions of commercial sale of Ampleon.

Right to make changes — Ampleon reserves the right to make changes to

information published in this document, including without limitation

specifications and product descriptions, at any time and without notice. This

document supersedes and replaces all information supplied prior to the

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Suitability for use — Ampleon products are not designed, authorized or

warranted to be suitable for use in life support, life-critical or safety-critical

systems or equipment, nor in applications where failure or malfunction of an

Ampleon product can reasonably be expected to result in personal injury,

death or severe property or environmental damage. Ampleon and its

suppliers accept no liability for inclusion and/or use of Ampleon products in

such equipment or applications and therefore such inclusion and/or use is at

the customer’s own risk.

Applications — Applications that are described herein for any of these

products are for illustrative purposes only. Ampleon makes no representation

or warranty that such applications will be suitable for the specified use without

further testing or modification.

Customers are responsible for the design and operation of their applications

and products using Ampleon products, and Ampleon accepts no liability for

any assistance with applications or customer product design. It is customer’s

sole responsibility to determine whether the Ampleon product is suitable and

fit for the customer’s applications and products planned, as well as for the

planned application and use of customer’s third party customer(s). Customers

should provide appropriate design and operating safeguards to minimize the

risks associated with their applications and products.

Ampleon does not accept any liability related to any default, damage, costs or

problem which is based on any weakness or default in the customer’s

applications or products, or the application or use by customer’s third party

customer(s). Customer is responsible for doing all necessary testing for the

customer’s applications and products using Ampleon products in order to

avoid a default of the applications and the products or of the application or

use by customer’s third party customer(s). Ampleon does not accept any

liability in this respect.

Limiting values — Stress above one or more limiting values (as defined in

the Absolute Maximum Ratings System of IEC 60134) will cause permanent

damage to the device. Limiting values are stress ratings only and (proper)

operation of the device at these or any other conditions above those given in

the Recommended operating conditions section (if present) or the

Characteristics sections of this document is not warranted. Constant or

repeated exposure to limiting values will permanently and irreversibly affect

the quality and reliability of the device.

Terms and conditions of commercial sale — Ampleon products are sold

subject to the general terms and conditions of commercial sale, as published

at http://www.ampleon.com/terms, unless otherwise agreed in a valid written

individual agreement. In case an individual agreement is concluded only the

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hereby expressly objects to applying the customer’s general terms and

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Export control — This document as well as the item(s) described herein

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Document status[1][2] Product status[3] Definition

Objective [short] data sheet Development This document contains data from the objective specification for product development.

Preliminary [short] data sheet Qualification This document contains data from the preliminary specification.

Product [short] data sheet Production This document contains the product specification.

Product data sheet Rev. 3 — 1 September 2015 14 of 15

BLU6H0410L(S)-600P

Power LDMOS transistor

Quick reference data — The Quick reference data is an extract of the

product data given in the Limiting values and Characteristics sections of this

document, and as such is not complete, exhaustive or legally binding.

Non-automotive qualified products — Unless this data sheet expressly

states that this specific Ampleon product is automotive qualified, the product

is not suitable for automotive use. It is neither qualified nor tested in

accordance with automotive testing or application requirements. Ampleon

accepts no liability for inclusion and/or use of non-automotive qualified

products in automotive equipment or applications.

In the event that customer uses the product for design-in and use in

automotive applications to automotive specifications and standards, customer

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Translations — A non-English (translated) version of a document is for

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Notice: All referenced brands, product names, service names and trademarks

are the property of their respective owners.

Any reference or use of any ‘NXP’ trademark in this document or in or on the

surface of Ampleon products does not result in any claim, liability or

entitlement vis-à-vis the owner of this trademark. Ampleon is no longer part of

the NXP group of companies and any reference to or use of the ‘NXP’

trademarks will be replaced by reference to or use of Ampleon’s own Any

reference or use of any ‘NXP’ trademark in this document or in or on the

surface of Ampleon products does not result in any claim, liability or

entitlement vis-à-vis the owner of this trademark. Ampleon is no longer part of

the NXP group of companies and any reference to or use of the ‘NXP’

trademarks will be replaced by reference to or use of Ampleon’s own

trademarks.

14. Contact information

For more information, please visit:

http://www.ampleon.com

For sales office addresses, please visit:

http://www.ampleon.com/sales

BLU6H0410L(S)-600P

Power LDMOS transistor

For more information, please visit: http://www.ampleon.com

For sales office addresses, please visit: http://www.ampleon.com/sales

Date of release: 1 September 2015

Document identifier: BLU6H0410L-600P_6H0410LS-600P#3

Please be aware that important notices concerning this document and the product(s)

described herein, have been included in section ‘Legal information’.

15. Contents

1 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1

1.1 General description . . . . . . . . . . . . . . . . . . . . . 1

1.2 Features and benefits. . . . . . . . . . . . . . . . . . . . 1

1.3 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1

2 Pinning information. . . . . . . . . . . . . . . . . . . . . . 2

3 Ordering information. . . . . . . . . . . . . . . . . . . . . 2

4 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 2

5 Thermal characteristics . . . . . . . . . . . . . . . . . . 3

6 Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . 3

6.1 Ruggedness in class-AB operation . . . . . . . . . 4

7 Application information. . . . . . . . . . . . . . . . . . . 5

7.1 Narrowband RF figures . . . . . . . . . . . . . . . . . . 5

7.1.1 2-Tone. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5

7.2 Impedance information . . . . . . . . . . . . . . . . . . . 5

8 Test information. . . . . . . . . . . . . . . . . . . . . . . . . 7

9 Package outline . . . . . . . . . . . . . . . . . . . . . . . . 10

10 Handling information. . . . . . . . . . . . . . . . . . . . 12

11 Abbreviations. . . . . . . . . . . . . . . . . . . . . . . . . . 12

12 Revision history. . . . . . . . . . . . . . . . . . . . . . . . 12

13 Legal information. . . . . . . . . . . . . . . . . . . . . . . 13

13.1 Data sheet status . . . . . . . . . . . . . . . . . . . . . . 13

13.2 Definitions. . . . . . . . . . . . . . . . . . . . . . . . . . . . 13

13.3 Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . 13

13.4 Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . 14

14 Contact information. . . . . . . . . . . . . . . . . . . . . 14

15 Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15

Mouser Electronics

Authorized Distributor

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NXP:

BLU6H0410LS-600P,1 BLU6H0410L-600P,11