PD - 97549 IRG7PH50UPbF IRG7PH50U-EP INSULATED GATE BIPOLAR TRANSISTOR Features * * * * * * * * C Low VCE (ON) trench IGBT technology Low switching losses Maximum junction temperature 175 C Square RBSOA 100% of the parts tested for ILM Positive VCE (ON) temperature co-efficient Tight parameter distribution Lead -Free VCES = 1200V IC = 90A, TC = 100C G TJ(max) =175C E VCE(on) typ. = 1.7V n-channel Benefits * High efficiency in a wide range of applications * Suitable for a wide range of switching frequencies due to low VCE (ON) and low switching losses * Rugged transient performance for increased reliability * Excellent current sharing in parallel operation C C GC Applications * * * * E TO-247AC IRG7PH50UPbF U.P.S Welding Solar inverter Induction heating G Gate E GC TO-247AD IRG7PH50U-EP C Collector E Emitter Absolute Maximum Ratings Max. Units VCES Collector-to-Emitter Voltage Parameter 1200 V IC @ TC = 25C Continuous Collector Current (Silicon Limited) 140 IC @ TC = 100C Continuous Collector Current (Silicon Limited) 90 INOMINAL ICM Nominal Current Pulse Collector Current, VGE = 15V 150 A 50 c ILM Clamped Inductive Load Current, VGE = 20V VGE Continuous Gate-to-Emitter Voltage 30 PD @ TC = 25C Maximum Power Dissipation 556 PD @ TC = 100C Maximum Power Dissipation 278 TJ Operating Junction and TSTG Storage Temperature Range 200 V W -55 to +175 C Soldering Temperature, for 10 sec. 300 (0.063 in. (1.6mm) from case) Mounting Torque, 6-32 or M3 Screw 10 lbf*in (1.1 N*m) Thermal Resistance Parameter f RJC (IGBT) Thermal Resistance Junction-to-Case-(each IGBT) TO-247AC RCS Thermal Resistance, Case-to-Sink (flat, greased surface) RJA Thermal Resistance, Junction-to-Ambient (typical socket mount) 1 f Min. Typ. Max. --- --- 0.27 --- 0.24 --- --- 40 --- Units C/W www.irf.com 07/28/2010 IRG7PH50UPbF/IRG7PH50U-EP Electrical Characteristics @ TJ = 25C (unless otherwise specified) Parameter V(BR)CES Collector-to-Emitter Breakdown Voltage Min. Typ. 1200 -- V(BR)CES/TJ Temperature Coeff. of Breakdown Voltage -- VCE(on) Collector-to-Emitter Saturation Voltage -- Max. Units -- 1.0 -- -- 1.7 2.0 -- 2.0 -- 2.1 -- VGE(th) Gate Threshold Voltage 3.0 -- 6.0 VGE(th)/TJ Threshold Voltage temp. coefficient -- -17 -- gfe ICES Forward Transconductance -- 55 -- Collector-to-Emitter Leakage Current -- 2.0 100 -- 1700 -- -- -- 200 IGES Gate-to-Emitter Leakage Current V Conditions VGE = 0V, IC = 100A e e d = 150C d = 175C d V/C VGE = 0V, IC = 1mA (25C-150C) IC = 50A, VGE = 15V, TJ = 25C V IC = 50A, VGE = 15V, TJ IC = 50A, VGE = 15V, TJ V VCE = VGE, IC = 2.0mA mV/C VCE = VGE, IC = 1mA (25C - 175C) S VCE = 50V, IC = 50A, PW = 80s A nA VGE = 0V, VCE = 1200V VGE = 0V, VCE = 1200V, TJ = 175C VGE = 30V Switching Characteristics @ TJ = 25C (unless otherwise specified) Min. Typ. Qg Total Gate Charge (turn-on) Parameter -- 290 Max. Units IC = 50A 440 d Conditions Qge Gate-to-Emitter Charge (turn-on) -- 40 60 Qgc Gate-to-Collector Charge (turn-on) -- 110 170 VCC = 600V Eon Turn-On Switching Loss -- 3600 4600 IC = 50A, VCC = 600V, VGE = 15V RG = 5.0, L = 200H,TJ = 25C nC VGE = 15V Eoff Turn-Off Switching Loss -- 2200 3200 Etotal Total Switching Loss -- 5800 7800 td(on) Turn-On delay time -- 35 55 tr Rise time -- 40 60 td(off) Turn-Off delay time -- 430 500 tf Fall time -- 45 65 Eon Turn-On Switching Loss -- 5600 -- Eoff Turn-Off Switching Loss -- 3900 -- Etotal Total Switching Loss -- 9500 -- td(on) Turn-On delay time -- 30 -- tr Rise time -- 45 -- td(off) Turn-Off delay time -- 500 -- tf Fall time -- 210 -- Cies Input Capacitance -- 6000 -- Coes Output Capacitance -- 190 -- VCC = 30V Cres Reverse Transfer Capacitance -- 130 -- f = 1.0Mhz IC = 200A RBSOA Reverse Bias Safe Operating Area FULL SQUARE J d Energy losses include tail & diode reverse recovery Diode clamp the same as IRG7PH50UDPbF ns d IC = 50A, VCC = 600V, VGE=15V J RG=5.0, L=200H, TJ = 175C Energy losses include tail & diode reverse recovery Diode clamp the same as IRG7PH50UDPbF ns pF VGE = 0V VCC = 960V, Vp =1200V Rg = 5.0, VGE = +20V to 0V, TJ =175C Notes: VCC = 80% (VCES), VGE = 20V, L = 200H, RG = 5.0. Pulse width 400s; duty cycle 2%. Refer to AN-1086 for guidelines for measuring V(BR)CES safely. R is measured at TJ of approximately 90C. 2 www.irf.com IRG7PH50UPbF/IRG7PH50U-EP 120 Duty cycle : 50% Tj = 150C Tc = 100C Vcc = 600V Gate drive as specified Power Dissipation = 183W 100 Load Current ( A ) 80 Square Wave: VCC 60 I 40 20 Diode as specified 0 0.1 1 10 100 f , Frequency ( kHz ) Fig. 1 - Typical Load Current vs. Frequency (Load Current = IRMS of fundamental) 140 600 120 500 400 80 Ptot (W) IC (A) 100 60 300 200 40 100 20 0 0 25 50 75 100 125 150 175 25 50 75 100 125 150 175 T C (C) T C (C) Fig. 2 - Maximum DC Collector Current vs. Case Temperature Fig. 3 - Power Dissipation vs. Case Temperature 1000 1000 100 10sec IC (A) 100sec 1msec 1 10 DC 0.1 IC (A) 100 10 Tc = 25C Tj = 175C Single Pulse 1 0.01 1 10 100 1000 VCE (V) Fig. 4 - Forward SOA TC = 25C, TJ 175C; VGE =15V www.irf.com 10000 10 100 1000 10000 VCE (V) Fig. 5 - Reverse Bias SOA TJ = 175C; VGE =20V 3 200 200 150 150 ICE (A) ICE (A) IRG7PH50UPbF/IRG7PH50U-EP 100 VGE = 18V VGE = 15V VGE = 12V VGE = 10V 50 100 VGE = 18V VGE = 15V VGE = 12V VGE = 10V 50 VGE = 8.0V VGE = 8.0V 0 0 0 2 4 6 8 0 10 2 4 6 8 10 VCE (V) VCE (V) Fig. 6 - Typ. IGBT Output Characteristics TJ = -40C; tp = 30s Fig. 7 - Typ. IGBT Output Characteristics TJ = 25C; tp = 30s 12 200 10 150 VCE (V) ICE (A) 8 VGE = 18V VGE = 15V 100 VGE = 12V VGE = 10V 50 2 0 2 4 6 8 6 4 VGE = 8.0V 0 0 10 0 VCE (V) 12 10 10 8 ICE = 50A VCE (V) VCE (V) ICE = 25A ICE = 100A 15 20 ICE = 25A ICE = 50A ICE = 100A 6 4 4 2 2 0 0 0 5 10 15 VGE (V) Fig. 10 - Typical VCE vs. VGE TJ = 25C 4 10 VGE (V) 12 6 5 Fig. 9 - Typical VCE vs. VGE TJ = -40C Fig. 8 - Typ. IGBT Output Characteristics TJ = 175C; tp = 30s 8 ICE = 25A ICE = 50A ICE = 100A 20 0 5 10 15 20 VGE (V) Fig. 11 - Typical VCE vs. VGE TJ = 175C www.irf.com IRG7PH50UPbF/IRG7PH50U-EP 12000 ICE, Collector-to-Emitter Current (A) 200 10000 150 Energy (J) 8000 T J = 25C T J = 175C 100 EON 6000 4000 EOFF 50 2000 0 0 0 2 4 6 8 0 10 20 40 Fig. 12- Typ. Transfer Characteristics VCE = 50V; tp = 30s 1000 60 80 100 IC (A) VGE, Gate-to-Emitter Voltage (V) Fig. 13 - Typ. Energy Loss vs. IC TJ = 175C; L = 200H; VCE = 600V, RG = 5.0; VGE = 15V 16000 tdOFF 14000 EOFF Energy (J) Swiching Time (ns) 12000 tF 100 tdON 10000 EON 8000 6000 4000 2000 tR 0 10 0 20 40 60 80 0 100 20 40 IC (A) 60 80 100 Rg () Fig. 14 - Typ. Switching Time vs. IC TJ = 175C; L = 200H; VCE = 600V, RG = 5.0; VGE = 15V Fig. 15 - Typ. Energy Loss vs. RG TJ = 175C; L = 200H; VCE = 600V, ICE = 50A; VGE = 15V Swiching Time (ns) 10000 tdOFF 1000 tF 100 tR tdON 10 0 20 40 60 80 100 RG () Fig. 16 - Typ. Switching Time vs. RG TJ = 175C; L = 200H; VCE = 600V, ICE = 50A; VGE = 15V www.irf.com 5 IRG7PH50UPbF/IRG7PH50U-EP 10000 16 VGE, Gate-to-Emitter Voltage (V) Capacitance (pF) Cies 1000 Coes 100 Cres 14 VCES = 600V VCES = 400V 12 10 10 8 6 4 2 0 0 100 200 300 400 500 600 0 50 VCE (V) 100 150 200 250 300 Q G, Total Gate Charge (nC) Fig. 18- Typical Gate Charge vs. VGE ICE = 50A Fig. 17 - Typ. Capacitance vs. VCE VGE= 0V; f = 1MHz Thermal Response ( Z thJC ) 1 0.1 D = 0.50 0.20 0.10 0.01 0.05 0.02 0.01 J 0.001 R1 R1 J 1 R2 R2 R3 R3 C 1 2 2 3 3 Ci= i/Ri Ci i/Ri 1E-005 4 4 i (sec) 0.00296 0.000009 0.08150 0.000180 0.11707 0.003342 0.06917 0.017016 Notes: 1. Duty Factor D = t1/t2 2. Peak Tj = P dm x Zthjc + Tc SINGLE PULSE ( THERMAL RESPONSE ) 0.0001 1E-006 Ri (C/W) R4 R4 0.0001 0.001 0.01 0.1 t1 , Rectangular Pulse Duration (sec) Fig 19. Maximum Transient Thermal Impedance, Junction-to-Case (IGBT) TO-247AC 6 www.irf.com IRG7PH50UPbF/IRG7PH50U-EP L L DUT 0 80 V + VCC - 1K DUT VCC Rg Fig.C.T.1 - Gate Charge Circuit (turn-off) Fig.C.T.2 - RBSOA Circuit R= diode clamp / DUT VCC ICM L DUT -5V DUT / DRIVER VCC Rg VCC Rg Fig.C.T.3 - Switching Loss Circuit Fig.C.T.4 - Resistive Load Circuit C force 100K D1 22K C sense G force DUT 0.0075F E sense E force Fig.C.T.5 - BVCES Filter Circuit www.irf.com 7 IRG7PH50UPbF/IRG7PH50U-EP 1200 120 tf 1000 800 80 800 VCE (V) 60 90% ICE 400 40 VCE (V) 100 I CE (A) 1000 600 400 200 20 5% ICE 0 0 E off Los s 0 0.5 1 -20 1.5 2 time(s) Fig. WF1 - Typ. Turn-off Loss Waveform @ TJ = 175C using Fig. CT.4 8 100 TEST CURRENT 80 90% tes t current 600 5% V CE -200 -0.5 120 tr 60 40 10% test current I CE (A) 1200 5% V CE 200 20 0 0 E on L os s -200 -3 -2 -1 0 1 2 3 4 -20 5 time (s) Fig. WF2 - Typ. Turn-on Loss Waveform @ TJ = 175C using Fig. CT.4 www.irf.com IRG7PH50UPbF/IRG7PH50U-EP TO-247AC Package Outline Dimensions are shown in millimeters (inches) TO-247AC Part Marking Information (;$03/( 7+,6,6$1,5)3( :,7+$66(0%/< /27&2'( $66(0%/('21:: ,17+($66(0%/</,1(+ 1RWH3LQDVVHPEO\OLQHSRVLWLRQ LQGLFDWHV/HDG)UHH ,17(51$7,21$/ 5(&7,),(5 /2*2 $66(0%/< /27&2'( 3$57180%(5 ,5)3( + '$7(&2'( <($5 :((. /,1(+ TO-247AC package is not recommended for Surface Mount Application. Note: For the most current drawing please refer to IR website at http://www.irf.com/package/ www.irf.com 9 IRG7PH50UPbF/IRG7PH50U-EP TO-247AD Package Outline Dimensions are shown in millimeters (inches) TO-247AD Part Marking Information (;$03/( 7+,6,6$1,5*3%.'( :,7+$66(0%/< /27&2'( $66(0%/('21:: ,17+($66(0%/</,1(+ 1RWH3LQDVVHPEO\OLQHSRVLWLRQ LQGLFDWHV/HDG)UHH 3$57180%(5 ,17(51$7,21$/ 5(&7,),(5 /2*2 + $66(0%/< /27&2'( '$7(&2'( <($5 :((. /,1(+ TO-247AD package is not recommended for Surface Mount Application. Note: For the most current drawing please refer to IR website at http://www.irf.com/package/ Data and specifications subject to change without notice. This product has been designed and qualified for Industrial market. Qualification Standards can be found on IR's Web site. IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information. 07/2010 10 www.irf.com