INSULATED GATE BIPOLAR TRANSISTOR
1www.irf.com
07/28/2010
VCES = 1200V
IC = 90A, TC = 100°C
TJ(max) =175°C
VCE(on) typ. = 1.7V
Features
• Low VCE (ON) trench IGBT technology
• Low switching losses
• Maximum junction temperature 175 °C
• Square RBSOA
• 100% of the parts tested for ILM
• Positive VCE (ON) temperature co-efficient
• Tight parameter distribution
• Lead -Free
Benefits
• High efficiency in a wide range of applications
• Suitable for a wide range of switching frequencies due to
low VCE (ON) and low switching losses
• Rugged transient performance for increased reliability
• Excellent current sharing in parallel operation
E
C
G
n-channel
GC E
Gate Collector Emitter
TO-247AC
IRG7PH50UPbF
TO-247AD
IRG7PH50U-EP
GCE
C
GCE
C
IRG7PH50UPbF
IRG7PH50U-EP
Applications
• U.P.S
• Welding
• Solar inverter
• Induction heating
Absolute Maximum Ratings
Parameter Max. Units
V
CES
Collector-to-Emitter Voltage 1200 V
I
C
@ T
C
= 25°C Continuous Collector Current (Silicon Limited) 140
I
C
@ T
C
= 100°C Continuous Collector Current (Silicon Limited) 90
I
NOMINAL
Nominal Current 50
I
CM
Pulse Collector Current, V
GE
= 15V 150
I
LM
Clamped Inductive Load Current, V
GE
= 20V
c
200
V
GE
Continuous Gate-to-Emitter Voltage ±30 V
P
D
@ T
C
= 25°C Maximum Power Dissipation 556
P
D
@ T
C
= 100°C Maximum Power Dissipation 278
T
J
Operating Junction and -55 to +175
T
STG
Storage Temperature Range °C
Soldering Temperature, for 10 sec. 300 (0.063 in. (1.6mm) from case)
Mounting Torque, 6-32 or M3 Screw 10 lbf·in (1.1 N·m)
Thermal Resistance
Parameter Min. Typ. Max. Units
R
θJC
(IGBT) Thermal Resistance Junction-to-Case-(each IGBT) TO-247AC
f
––– ––– 0.27
R
θCS
Thermal Resistance, Case-to-Sink (flat, greased surface)
f
––– 0.24 –––
R
θJA
Thermal Resistance, Junction-to-Ambient (typical socket mount) ––– 40 –––
A
W
°C/W
PD - 97549
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IRG7PH50UPbF/IRG7PH50U-EP
Notes:
VCC = 80% (VCES), VGE = 20V, L = 200µH, RG = 5.0Ω.
Pulse width ≤ 400µs; duty cycle ≤ 2%.
Refer to AN-1086 for guidelines for measuring V(BR)CES safely.
Rθ is measured at TJ of approximately 90°C.
Electrical Characteristics @ T
J
= 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V
(BR)CES
Collector-to-Emitter Breakdown Voltage 1200 — — V V
GE
= 0V, I
C
= 100µA
e
∆V
(BR)CES
/∆T
J
Temperature Coeff. of Breakdown Voltage
—1.0—V/°C
V
GE
= 0V, I
C
= 1mA (25°C-150°C)
e
—1.72.0 I
C
= 50A, V
GE
= 15V, T
J
= 25°C
d
V
CE(on)
Collector-to-Emitter Saturation Voltage — 2.0 — V I
C
= 50A, V
GE
= 15V, T
J
= 150°C
d
—2.1— I
C
= 50A, V
GE
= 15V, T
J
= 175°C
d
V
GE(th)
Gate Threshold Voltage 3.0 — 6.0 V V
CE
= V
GE
, I
C
= 2.0mA
∆V
GE(th)
/∆TJ
Threshold Voltage temp. coefficient — -17 — mV/°C V
CE
= V
GE
, I
C
= 1mA (25°C - 175°C)
gfe Forward Transconductance — 55 — S V
CE
= 50V, I
C
= 50A, PW = 80µs
I
CES
Collector-to-Emitter Leakage Current — 2.0 100 V
GE
= 0V, V
CE
= 1200V
—1700— V
GE
= 0V, V
CE
= 1200V, T
J
= 175°C
I
GES
Gate-to-Emitter Leakage Current — — ±200 nA V
GE
= ±30V
Switching Characteristics @ T
J
= 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units
Q
g
Total Gate Charge (turn-on) — 290 440 I
C
= 50A
d
Q
ge
Gate-to-Emitter Charge (turn-on) — 40 60 nC V
GE
= 15V
Q
gc
Gate-to-Collector Charge (turn-on) — 110 170 V
CC
= 600V
E
on
Turn-On Switching Loss — 3600 4600 I
C
= 50A, V
CC
= 600V, V
GE
= 15V
d
E
off
Turn-Off Switching Loss — 2200 3200 µJ R
G
= 5.0Ω, L = 200µH,T
J
= 25°C
E
total
Total Switching Loss — 5800 7800 Energy losses include tail & diode reverse recovery
t
d(on)
Turn-On delay time — 35 55 Diode clamp the same as IRG7PH50UDPbF
t
r
Rise time — 40 60 ns
t
d(off)
Turn-Off delay time — 430 500
t
f
Fall time — 45 65
E
on
Turn-On Switching Loss — 5600 — I
C
= 50A, V
CC
= 600V, V
GE
=15V
d
E
off
Turn-Off Switching Loss — 3900 — µJ R
G
=5.0Ω, L=200µH, T
J
= 175°C
E
total
Total Switching Loss — 9500 — Energy losses include tail & diode reverse recovery
t
d(on)
Turn-On delay time — 30 — Diode clamp the same as IRG7PH50UDPbF
t
r
Rise time — 45 — ns
t
d(off)
Turn-Off delay time — 500 —
t
f
Fall time — 210 —
C
ies
Input Capacitance — 6000 — pF V
GE
= 0V
C
oes
Output Capacitance — 190 — V
CC
= 30V
C
res
Reverse Transfer Capacitance — 130 — f = 1.0Mhz
I
C
= 200A
RBSOA Reverse Bias Safe Operating Area FULL SQUARE V
CC
= 960V, Vp =1200V
Rg = 5.0Ω, V
GE
= +20V to 0V, T
J
=175°C
Conditions
µA
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IRG7PH50UPbF/IRG7PH50U-EP
Fig. 2 - Maximum DC Collector Current vs.
Case Temperature
Fig. 3 - Power Dissipation vs. Case
Temperature
Fig. 4 - Forward SOA
TC = 25°C, TJ ≤ 175°C; VGE =15V
Fig. 5 - Reverse Bias SOA
TJ = 175°C; VGE =20V
Fig. 1 - Typical Load Current vs. Frequency
(Load Current = IRMS of fundamental)
25 50 75 100 125 150 175
TC (°C)
0
20
40
60
80
100
120
140
IC (A)
25 50 75 100 125 150 175
TC (°C)
0
100
200
300
400
500
600
Ptot (W)
10 100 1000 10000
VCE (V)
1
10
100
1000
IC (A)
0.1 110 100
f , Frequency ( kHz )
0
20
40
60
80
100
120
Load Current ( A )
Duty cycle : 50%
Tj = 150°C
Tc = 100°C
Vcc = 600V
Gate drive as specified
Power Dissipation = 183W
I
Squ are Wave:
VCC
Diode as specified
1 10 100 1000 10000
VCE (V)
0.01
0.1
1
10
100
1000
IC (A)
10µsec
100µsec
Tc = 25°C
Tj = 175°C
Single Pulse
DC
1msec
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IRG7PH50UPbF/IRG7PH50U-EP
Fig. 8 - Typ. IGBT Output Characteristics
TJ = 175°C; tp = 30µs
Fig. 10 - Typical VCE vs. VGE
TJ = 25°C
Fig. 11 - Typical VCE vs. VGE
TJ = 175°C
Fig. 9 - Typical VCE vs. VGE
TJ = -40°C
Fig. 6 - Typ. IGBT Output Characteristics
TJ = -40°C; tp = 30µs
Fig. 7 - Typ. IGBT Output Characteristics
TJ = 25°C; tp = 30µs
0246810
VCE (V)
0
50
100
150
200
ICE (A)
VGE = 18V
VGE = 15V
VGE = 12V
VGE = 10V
VGE = 8.0V
0246810
VCE (V)
0
50
100
150
200
ICE (A)
VGE = 18V
VGE = 15V
VGE = 12V
VGE = 10V
VGE = 8.0V
0246810
VCE (V)
0
50
100
150
200
ICE (A)
VGE = 18V
VGE = 15V
VGE = 12V
VGE = 10V
VGE = 8.0V
0 5 10 15 20
VGE (V)
0
2
4
6
8
10
12
VCE (V)
ICE = 25A
ICE = 50A
ICE = 100A
0 5 10 15 20
VGE (V)
0
2
4
6
8
10
12
VCE (V)
ICE = 25A
ICE = 50A
ICE = 100A
0 5 10 15 20
VGE (V)
0
2
4
6
8
10
12
VCE (V)
ICE = 25A
ICE = 50A
ICE = 100A
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IRG7PH50UPbF/IRG7PH50U-EP
Fig. 14 - Typ. Switching Time vs. IC
TJ = 175°C; L = 200µH; VCE = 600V, RG = 5.0Ω; VGE = 15V Fig. 15 - Typ. Energy Loss vs. RG
TJ = 175°C; L = 200µH; VCE = 600V, ICE = 50A; VGE = 15V
Fig. 16 - Typ. Switching Time vs. RG
TJ = 175°C; L = 200µH; VCE = 600V, ICE = 50A; VGE = 15V
Fig. 13 - Typ. Energy Loss vs. IC
TJ = 175°C; L = 200µH; VCE = 600V, RG = 5.0Ω; VGE = 15V
Fig. 12- Typ. Transfer Characteristics
VCE = 50V; tp = 30µs
0 20406080100
IC (A)
0
2000
4000
6000
8000
10000
12000
Energy (µJ)
EOFF
EON
020 40 60 80 100
IC (A)
10
100
1000
Swiching Time (ns)
tR
tdOFF
tF
tdON
020 40 60 80 100
RG (Ω)
10
100
1000
10000
Swiching Time (ns)
tR
tdOFF
tF
tdON
0246810
VGE, Gate-to-Emitter Voltage (V)
0
50
100
150
200
ICE, Collector-to-Emitter Current (A)
TJ = 25°C
TJ = 175°C
0 20406080100
Rg (Ω)
0
2000
4000
6000
8000
10000
12000
14000
16000
Energy (µJ)
E
OFF
E
ON
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IRG7PH50UPbF/IRG7PH50U-EP
Fig 19. Maximum Transient Thermal Impedance, Junction-to-Case (IGBT) TO-247AC
Fig. 17 - Typ. Capacitance vs. VCE
VGE= 0V; f = 1MHz
Fig. 18- Typical Gate Charge vs. VGE
ICE = 50A
0100 200 300 400 500 600
VCE (V)
10
100
1000
10000
Capacitance (pF)
Cies
Coes
Cres
0 50 100 150 200 250 300
Q G, Total Gate Charge (nC)
0
2
4
6
8
10
12
14
16
VGE, Gate-to-Emitter Voltage (V)
VCES = 600V
VCES = 400V
1E-006 1E-005 0.0001 0.001 0.01 0.1
t1 , Rectangular Pulse Duration (sec)
0.0001
0.001
0.01
0.1
1
Thermal Response ( Z thJC )
0.20
0.10
D = 0.50
0.02
0.01
0.05
SINGLE PULSE
( THERMAL RESPONSE )
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
Ri (°C/W) τi (sec)
0.00296 0.000009
0.08150 0.000180
0.11707 0.003342
0.06917 0.017016
τJ
τJ
τ1
τ1
τ2
τ2τ3
τ3
R1
R1R2
R2R3
R3
Ci i/Ri
Ci= τi/Ri
τ
τC
τ4
τ4
R4
R4
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IRG7PH50UPbF/IRG7PH50U-EP
Fig.C.T.1 - Gate Charge Circuit (turn-off) Fig.C.T.2 - RBSOA Circuit
0
1K
VCCDUT
L
L
Rg
80 V
DUT VCC
+
-
Fig.C.T.4 - Resistive Load Circuit
Rg
VCC
DUT
R =
VCC
ICM
G force
C sens
e
100K
DUT
0.0075µF
D1 22K
E force
C force
E sense
Fig.C.T.5 - BVCES Filter Circuit
Fig.C.T.3 - Switching Loss Circuit
L
Rg
VCC
DUT /
DRIVER
diode clamp /
DUT
-5V
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IRG7PH50UPbF/IRG7PH50U-EP
Fig. WF1 - Typ. Turn-off Loss Waveform
@ TJ = 175°C using Fig. CT.4
Fig. WF2 - Typ. Turn-on Loss Waveform
@ TJ = 175°C using Fig. CT.4
-200
0
200
400
600
800
1000
1200
-0.5 0 0.5 1 1.5 2
time(µs)
V
CE
(V )
-20
0
20
40
60
80
100
120
I
CE
(A )
90% I
CE
5% V
CE
5% I
CE
Eoff Loss
t
f
-200
0
200
400
600
800
1000
1200
-3 -2 -1 0 1 2 3 4 5
time (µs)
VCE (V)
-20
0
20
40
60
80
100
120
ICE (A )
TEST
CURRENT
90% tes t
cur r ent
5% V
CE
10% test
current
tr
Eon Loss
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IRG7PH50UPbF/IRG7PH50U-EP
TO-247AC Part Marking Information
TO-247AC Package Outline
Dimensions are shown in millimeters (inches)
TO-247AC package is not recommended for Surface Mount Application.
Note: For the most current drawing please refer to IR website at http://www.irf.com/package/
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IRG7PH50UPbF/IRG7PH50U-EP
TO-247AD Part Marking Information
TO-247AD Package Outline
Dimensions are shown in millimeters (inches)
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information. 07/2010
Data and specifications subject to change without notice.
This product has been designed and qualified for Industrial market.
Qualification Standards can be found on IR’s Web site.
TO-247AD package is not recommended for Surface Mount Application.
Note: For the most current drawing please refer to IR website at http://www.irf.com/package/
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