2 A, Ultralow Noise,
High PSRR, RF Linear Regulator
Data Sheet ADP7159
Rev. B Document Feedback
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FEATURES
Input voltage range: 2.3 V to 5.5 V
Adjustable output voltage range (VOUT): 1.2 V to 3.3 V
Maximum load current: 2 A
Low noise
0.9 µV rms total integrated noise from 100 Hz to 100 kHz
1.6 µV rms total integrated noise from 10 Hz to 100 kHz
Noise spectral density: 1.7 nV/√Hz from 10 kHz to 1 MHz
Power supply rejection ratio (PSRR)
68 dB from 1 kHz to 100 kHz
45 dB at 1 MHz
Dropout voltage: 200 mV typical at IOUT = 2 A, VOUT = 3.3 V
Initial accuracy: ±0.6% at ILOAD = 10 mA
Accuracy over line, load, and temperature: ±1.5%
Quiescent current (IGND)
4.0 mA typical at 0 µA
9.0 mA typical at 2 A
Low shutdown current: 0.2 A typical
Stable with a 10 µF ceramic output capacitor
10-lead, 3 mm × 3 mm LFCSP and 8-lead SOIC packages
Precision enable
Supported by ADIsimPower tool
APPLICATIONS
Regulation to noise sensitive applications: phase-locked
loops (PLLs), voltage controlled oscillators (VCOs), and
PLLs with integrated VCOs
Communications and infrastructure
Backhaul and microwave links
GENERAL DESCRIPTION
The ADP7159 is an adjustable linear regulator that operates from
2.3 V to 5.5 V and provides up to 2 A of output current. Output
voltages from 1.2 V to 3.3 V are possible depending on the model.
Using an advanced proprietary architecture, the device provides
high power supply rejection and ultralow noise, achieving excellent
line and load transient response with only a 10 µF ceramic
output capacitor.
The ADP7159 is available in four models that optimize power
dissipation and PSRR performance as a function of the input
and output voltage. See Table 9 and Table 10 for selection guides.
The typical output noise of the ADP7159 regulator is 0.9 V rms
from 100 Hz to 100 kHz and 1.7 nV/√Hz for noise spectral density
from 10 kHz to 1 MHz. The ADP7159 is available in 10-lead,
3 mm × 3 mm LFCSP and 8-lead SOIC packages, making it not
only a very compact solution, but also providing excellent thermal
performance for applications requiring up to 2 A of output
current in a small, low profile footprint.
TYPICAL APPLICATION CIRCUIT
EN
BYP
VREG
ADP7159
VIN VOUT
VOUT_SENSE
C
OUT
10µF
V
OUT
= 3.3V
GND (EPAD)
C
IN
10µF
C
REG
1µF
C
BYP
1µF
V
IN
= 3.8V
12939-001
ON
OFF
REF_SENSE
REF C
REF
1µF
R1
V
OUT
= 1.2V × (R1 + R2)/R2
1k < R2 < 200k
R2
Figure 1. Regulated 3.3 V Output from 3.8 V Input
Table 1. Related Devices
Model
Input
Voltage
Output
Current
Fixed/
Adjustable Package
ADP7158 2.3 V to
5.5 V
2 A Fixed 10-Lead LFCSP/
8-Lead SOIC
ADP7156,
ADP7157
2.3 V to
5.5 V
1.2 A Fixed/
Adjustable
10-Lead LFCSP/
8-Lead SOIC
ADM7150,
ADM7151
4.5 V to
16 V
800 mA Fixed/
Adjustable
8-Lead LFCSP/
8-Lead SOIC
ADM7154,
ADM7155
2.3 V to
5.5 V
600 mA Fixed/
Adjustable
8-Lead LFCSP/
8-Lead SOIC
ADM7160 2.2 V to
5.5 V
200 mA Fixed 6-Lead LFCSP/
5-Lead TSOT
0.1
1
10
100
1k
10 100 1k 10k 100k 1M 10M
NOISE SPECTR
A
L DENSITY (nV/
Hz)
FREQUENCY (Hz)
C
BYP
= 1µF
C
BYP
= 10µF
C
BYP
= 100µF
C
BYP
= 1000µF
12939-032
Figure 2. Noise Spectral Density at Different Values of CBYP, VOUT = 3.3 V
ADP7159* PRODUCT PAGE QUICK LINKS
Last Content Update: 02/23/2017
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DOCUMENTATION
Data Sheet
ADP7159: 2 A, Ultralow Noise, High PSRR, RF Linear
Regulator Data Sheet
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UG-811: Evaluating the ADP7159 Ultralow Noise, 2 A,
Adjustable Output, RF Linear Regulator
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DESIGN RESOURCES
ADP7159 Material Declaration
PCN-PDN Information
Quality And Reliability
Symbols and Footprints
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ADP7159 Data Sheet
Rev. B | Page 2 of 23
TABLE OF CONTENTS
Features .............................................................................................. 1
Applications ....................................................................................... 1
General Description ......................................................................... 1
Typical Application Circuit ............................................................. 1
Revision History ............................................................................... 2
Specifications ..................................................................................... 3
Absolute Maximum Ratings ............................................................ 5
Thermal Data ................................................................................ 5
Thermal Resistance ...................................................................... 5
ESD Caution .................................................................................. 5
Pin Configurations and Function Descriptions ........................... 6
Typical Performance Characteristics ............................................. 7
Theory of Operation ...................................................................... 13
Applications Information .............................................................. 14
ADIsimPower Design Tool ....................................................... 14
Capacitor Selection .................................................................... 14
Undervoltage Lockout (UVLO) ............................................... 15
Programmable Precision Enable .............................................. 16
Start-Up Time ............................................................................. 17
REF, BYP, and VREG Pins......................................................... 17
Current-Limit and Thermal Shutdown ................................... 17
Thermal Considerations ............................................................ 17
PSRR Performance ..................................................................... 20
PCB Layout Considerations .......................................................... 21
Outline Dimensions ....................................................................... 22
Ordering Guide .......................................................................... 23
REVISION HISTORY
11/2016Rev. A to Rev. B
Changes to Table 3 ............................................................................ 4
5/2016Rev. 0 to Rev. A
Added Note 2 to Table 2; Renumbered Sequentially ................... 4
Change to Figure 4 ........................................................................... 6
Change to Programmable Precision Enable Section ................. 16
3/2016Revision 0: Initial Version
Data Sheet ADP7159
Rev. B | Page 3 of 23
SPECIFICATIONS
VIN = VOUT_MAX1 + 0.5 V; VEN = VIN; ILOAD = 10 mA; CIN = COUT = 10 µF; CREG = CREF = CBYP = 1 µF; TA = 25°C for typical specifications;
TA = −40°C to +125°C for minimum/maximum specifications, unless otherwise noted.
Table 2.
Parameter Symbol Test Conditions/Comments Min Typ Max Unit
INPUT VOLTAGE RANGE VIN 2.3 5.5 V
LOAD CURRENT ILOAD 2 A
OPERATING SUPPLY CURRENT IGND ILOAD = 0 µA 4.0 8.0 mA
ILOAD = 2 A 9.0 14.0 mA
SHUTDOWN CURRENT IIN-SD EN = ground 0.2 4 µA
NOISE2 VOUT = 1.2 V to 3.3 V
Output Noise OUTNOISE 10 Hz to 100 kHz 1.6 µV rms
100 Hz to 100 kHz 0.9 µV rms
Noise Spectral Density OUTNSD 10 kHz to 1 MHz 1.7 nV/√Hz
POWER SUPPLY REJECTION RATIO2 PSRR ILOAD = 2 A
ADP7159-01 1 kHz to 100 kHz, VIN = 2.3 V, VOUT = 1.8 V 55 dB
1 MHz, VIN = 2.3 V, VOUT = 1.8 V 40 dB
ADP7159-02 1 kHz to 100 kHz, VIN = 2.8 V, VOUT = 2.3 V 61 dB
1 MHz, VIN = 2.8 V, VOUT = 2.3 V 45 dB
ADP7159-03 1 kHz to 100 kHz, VIN = 3.4 V, VOUT = 2.9 V 65 dB
1 MHz, VIN = 3.4 V, VOUT = 2.9 V 45 dB
ADP7159-04 1 kHz to 100 kHz, VIN = 3.8 V, VOUT = 3.3 V 68 dB
1 MHz, VIN = 3.8 V, VOUT = 3.3 V 45 dB
OUTPUT VOLTAGE ACCURACY
Output Voltage3 VOUT 1.2 3.3 V
Initial Accuracy ILOAD = 10 mA, TA = 25°C −0.6 +0.6 %
10 mA < ILOAD < 2 A, TA = 25°C −1.0 +1.0 %
10 mA < I
LOAD
< 2 A, T
A
= −40°C to +125°C
−1.5
%
REGULATION
Line ∆VOUT/∆VIN VIN = VOUT_MAX + 0.5 V to 5.5 V −0.1 +0.1 %/V
Load
4
∆V
OUT
/∆I
OUT
I
OUT
= 10 mA to 2 A
%/A
CURRENT-LIMIT THRESHOLD5 ILIMIT
REF 22 mA
VOUT 2.4 3 3.8 A
DROPOUT VOLTAGE6 VDROPOUT IOUT = 1.2 A, VOUT = 3.3 V 120 170 mV
IOUT = 2 A, VOUT = 3.3 V 200 280 mV
PULL-DOWN RESISTANCE EN = 0 V, VIN = 5.5 V
VOUT VOUT-PULL VOUT = 1 V 650 Ω
VREG
V
REG-PULL
V
REG
= 1 V
31
REF VREF-PULL VREF = 1 V 850 Ω
BYP VBYP-PULL VBYP = 1 V 650 Ω
START-UP TIME2, 7 VOUT = 3.3 V
VOUT tSTART-UP 1.2 ms
VREG tREG-START-UP 0.6 ms
REF tREF-START-UP 0.5 ms
THERMAL SHUTDOWN2
Threshold TSSD TJ rising 150 °C
Hysteresis TSSD-HYS 15 °C
ADP7159 Data Sheet
Rev. B | Page 4 of 23
Parameter Symbol Test Conditions/Comments Min Typ Max Unit
UNDERVOLTAGE THRESHOLDS
Input Voltage
Rising UVLORISE 2.22 2.29 V
Falling UVLOFAL L 1.95 2.02 V
Hysteresis
UVLO
HYS
200
mV
VREG THRESHOLDS8
Rising VREGUVLORISE 1.94 V
Falling VREGUVLOFALL 1.60 V
Hysteresis VREGUVLOHYS 185 mV
EN INPUT PRECISION 2.3 V ≤ VIN 5.5 V
EN Input
Logic High VEN_HIGH 1.13 1.22 1.31 V
Logic Low VEN_LOW 1.05 1.13 1.22 V
Logic Hysteresis VEN_HYS 90 mV
LEAKAGE CURRENT
REF_SENSE IREF_SENSE_LKG 10 nA
EN IEN_LKG EN = VIN or ground 0.01 1 µA
1 VOUT_MAX is the maximum output voltage of each version of the ADP7159.
2 Guaranteed by characterization, but not production tested.
3 This output voltage specification is for ADP7159-04 version. Table 10 provides a guide for selecting one of the four versions of the ADP7159 based on voltage range.
4 This specification is based on an endpoint calculation using 10 mA and 2 A loads.
5 Current-limit threshold is the current at which the output voltage drops to 90% of the specified typical value. For example, the current limit for a 3.0 V output voltage
is the current that causes the output voltage to drop to 90% of 3.0 V or 2.7 V.
6 Dropout voltage is the input to output voltage differential when the input voltage is set to the nominal output voltage. Dropout applies only for output voltages
above 2.3 V.
7 Start-up time is the time from the rising edge of VEN to VOUT, VREG, or VREF being at 90% of its nominal value.
8 The output voltage is disabled until the VREG UVLO rise threshold is crossed. The VREG output is disabled until the input voltage UVLO rising threshold is crossed.
Table 3. Input and Output Capacitors, Recommended Specifications
Parameter Symbol Test Conditions/Comments Min Typ Max Unit
MINIMUM CAPACITANCE TA = −40°C to +125°C
Input1 CIN 7 10.0 µF
Regulator1 CREG 0.7 1.0 µF
Output1 COUT 7 10.0 µF
Bypass CBYP 0.1 1.0 µF
Reference CREF 0.7 1.0 µF
CAPACITOR EFFECTIVE SERIES
RESISTANCE (ESR)
RESR TA = −40°C to +125°C
COUT, CIN 0.1 Ω
CREG, CREF 0.2 Ω
CBYP 2.0 Ω
1 The minimum input, regulator, and output capacitances must be greater than 7.0 μF over the full range of operating conditions. The full range of operating conditions
in the application must be considered during device selection to ensure that the minimum capacitance specification is met. X7R and X5R type capacitors are
recommended; Y5V and Z5U capacitors are not recommended for use with any LDO.
Data Sheet ADP7159
Rev. B | Page 5 of 23
ABSOLUTE MAXIMUM RATINGS
Table 4.
Parameter Rating
VIN to Ground −0.3 V to +7 V
VREG to Ground
−0.3 V to VIN or +4 V
(whichever is less)
VOUT to Ground −0.3 V to VREG or +4 V
(whichever is less)
VOUT_SENSE to Ground 0.3 V to VREG or +4 V
(whichever is less)
VOUT to VOUT_SENSE ±0.3 V
BYP to VOUT ±0.3 V
EN to Ground −0.3 V to +7 V
BYP to Ground 0.3 V to VREG or +4 V
(whichever is less)
REF to Ground
−0.3 V to VREG or +4 V
(whichever is less)
REF_SENSE to Ground −0.3 V to +4 V
Storage Temperature Range −65°C to +150°C
Operational Junction Temperature
Range
−40°C to +125°C
Soldering Conditions JEDEC J-STD-020
Stresses at or above those listed under Absolute Maximum
Ratings may cause permanent damage to the product. This is a
stress rating only; functional operation of the product at these
or any other conditions above those indicated in the operational
section of this specification is not implied. Operation beyond
the maximum operating conditions for extended periods may
affect product reliability.
THERMAL DATA
Absolute maximum ratings apply individually only, not in
combination. The ADP7159 can be damaged when the junction
temperature limits are exceeded. Monitoring ambient temperature
does not guarantee that TJ is within the specified temperature
limits. In applications with high power dissipation and poor
thermal resistance, the maximum ambient temperature may
need to be derated.
In applications with moderate power dissipation and low
printed circuit board (PCB) thermal resistance, the maximum
ambient temperature can exceed the maximum limit as long as
the junction temperature is within specification limits. The
junction temperature (TJ) of the device is dependent on the
ambient temperature (TA), the power dissipation of the device
(PD), and the junction to ambient thermal resistance of the
package (θJA).
The maximum junction temperature (TJ) is calculated from the
ambient temperature (TA) and power dissipation (PD) using the
following formula:
TJ = TA + (PD × θJA)
The junction-to-ambient thermal resistance (θJA) of the package
is based on modeling and calculation using a 4-layer board. The
junction-to-ambient thermal resistance is highly dependent on
the application and board layout. In applications where high
maximum power dissipation exists, close attention to thermal
board design is required. The θJA value can vary, depending on
PCB material, layout, and environmental conditions. The specified
values of θJA are based on a 4-layer, 4 in. × 3 in. circuit board.
See the JESD51-7 standard and the JESD51-9 standard for
detailed information on the board construction.
ΨJB is the junction-to-board thermal characterization parameter
with units of °C/W. ΨJB of the package is based on modeling and
calculation using a 4-layer board. JESD51-12, Guidelines for
Reporting and Using Electronic Package Thermal Information,
states that thermal characterization parameters are not the same
as thermal resistances. ΨJB measures the component power
flowing through multiple thermal paths rather than a single
path as in thermal resistance, θJB. Therefore, ΨJB thermal paths
include convection from the top of the package as well as
radiation from the package, factors that make ΨJB more useful
in real-world applications. Maximum junction temperature (TJ)
is calculated from the board temperature (TB) and power
dissipation (PD) using the following formula:
TJ = TB + (PD × ΨJB)
See JESD51-8 and JESD51-12 for more detailed information
about ΨJB.
THERMAL RESISTANCE
θJA, θJC, and ΨJB are specified for the worst case conditions, that
is, a device soldered in a circuit board for surface-mount
packages.
Table 5. Thermal Resistance
Package Type θJA θJC ΨJB Unit
10-Lead LFCSP 53.8 15.6 29.1 °C/W
8-Lead SOIC 50.4 42.3 30.1 °C/W
ESD CAUTION
ADP7159 Data Sheet
Rev. B | Page 6 of 23
PIN CONFIGURATIONS AND FUNCTION DESCRIPTIONS
4
BYP
5
EN
2
VOUT
3
VOUT_SENSE
7
REF
6 REF_SENSE
9
8
NOTES
1. THE EXPOSED PAD IS LOCATED ON THE BOTTOM OF
THE PACKAGE. T HE EXPOSED PAD E NHANCE S
THERM AL PERF ORMANCE , AND I T IS E LECTRICALLY
CONNECTED TO GROUND I NS IDE T HE PACKAGE.
CONNECT THE EXPOSEDPAD TO T HE GRO UND P LANE
ON T HE BOARD TO ENSURE PROPER OPERATION.
1
VOUT 10
VIN
VREG
VIN
ADP7159
TOP VIEW
(No t t o Scal e)
12939-003
Figure 3. 10-Lead LFCSP Pin Configuration
NOTES
1. THE EXPOSED PAD IS LOCATED ON THE BOTTOM OF
THE P ACKAGE. THE E X P OSE D P AD E NHANCE S THERMAL
PERF ORMACE , AND IT I S E LECT RICAL LY CONNECT E D TO
GRO UND INSIDE T HE P ACKAGE. CONNE CT T HE E X P OSED
PAD TO T HE GROUND P LANE ON T HE BOARD T O ENSURE
PROP E R OPE RATION.
12939-004
VOUT
VOUT_SENSE
BYP
EN
1
2
3
4
VIN
VREG
REF
REF_SENSE
8
7
6
5
ADP7159
TOP VIEW
(Not to Scal e)
Figure 4. 8-Lead SOIC Pin Configuration
Table 6. Pin Function Descriptions
Pin No.
Mnemonic Description
LFCSP SOIC
1, 2 1 VOUT Regulated Output Voltage. Bypass VOUT to ground with a 10 µF or greater capacitor.
3 2 VOUT_SENSE Output Sense. VOUT_SENSE is internally connected to VOUT with a 10 Ω resistor. Connect VOUT_SENSE
as close to the load as possible.
4 3 BYP Low Noise Bypass Capacitor. Connect a 1 µF or greater capacitor from the BYP pin to ground to
reduce noise. Do not connect a load to this pin.
5 4 EN Enable. Drive EN high to turn on the regulator, and drive EN low to turn off the regulator. For
automatic startup, connect EN to VIN.
6 5 REF_SENSE Reference Sense. This pin sets the output voltage with an external resistor divider.
VOUT = VREF × (R1 + R2)/R2, where VREF = 1.2 V. Connect REF_SENSE to the REF pin. Do not connect
REF_SENSE to VOUT or ground.
7
6
REF
Low Noise Reference Voltage Output. Bypass REF to ground with a 1 µF or greater capacitor. Short
REF_SENSE to REF for fixed output voltages. Do not connect a load to this pin.
8 7 VREG Regulated Input Supply Voltage to the LDO Amplifier. Bypass VREG to ground with a 1 µF or greater
capacitor.
9, 10 8 VIN Regulator Input Supply Voltage. Bypass VIN to ground with a 10 µF or greater capacitor.
EP Exposed Pad. The exposed pad is located on the bottom of the package. The exposed pad enhances
thermal performance, and it is electrically connected to ground inside the package. Connect the
exposed pad to the ground plane on the board to ensure proper operation.
Data Sheet ADP7159
Rev. B | Page 7 of 23
TYPICAL PERFORMANCE CHARACTERISTICS
VIN = VOUT + 0.5 V, or VIN = 2.3 V, whichever is greater; VEN = VIN; ILOAD = 10 mA; CIN = COUT = 10 µF; CREG = CREF = CBYP = 1 µF;
TA = 25°C, unless otherwise noted.
0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
–40 –20 020 40 60 80 100 120 140
IIN-SD (µA)
TEMPERATURE (°C)
2.3V 2.5V
5.5V
5.0V
4.0V
3.0V
12939-005
Figure 5. Shutdown Current (IIN-SD) vs. Temperature
at Various Input Voltages (VIN), VOUT =1.8V
TEMPERATURE (°C)
3.25
3.26
3.27
3.28
3.29
3.30
3.31
3.32
3.33
3.34
3.35
–40 –20 020 40 60 80 100 120 140
VOUT (V)
I
LOAD
= 0mA
I
LOAD
= 10mA
I
LOAD
= 100m A
I
LOAD
= 600m A
I
LOAD
= 1200mA
I
LOAD
= 2000mA
12939-006
Figure 6. Output Voltage (VOUT) vs. Temperature
at Various Loads, VOUT = 3.3 V
3.25
3.26
3.27
3.28
3.29
3.30
3.31
3.32
3.33
3.34
3.35
0.1m 1m 10m 100m 110
V
OUT
(V)
ILOAD (A)
12939-007
Figure 7. Output Voltage (VOUT) vs. Load Current (ILOAD), VOUT = 3.3 V
3.25
3.26
3.27
3.28
3.29
3.30
3.31
3.32
3.33
3.34
3.35
3.8 4.0 4.2 4.4 4.6 4.8 5.0 5.2 5.4 5.6
V
OUT
(V)
V
IN
(V)
I
LOAD
= 0mA
I
LOAD
= 10mA
I
LOAD
= 100m A
I
LOAD
= 600m A
I
LOAD
= 1200mA
I
LOAD
= 2000mA
12939-008
Figure 8. Output Voltage (VOUT) vs. Input Voltage (VIN)
at Various Loads, VOUT = 3.3 V
TEMPERATURE (°C)
0
1
2
3
4
5
6
7
8
9
10
11
12
13
14
–40 –20 020 40 60 80 100 120 140
I
GND
(mA)
I
LOAD
= 0mA
I
LOAD
= 10mA
I
LOAD
= 100m A
I
LOAD
= 600m A
I
LOAD
= 1200mA
I
LOAD
= 2000mA
12939-009
Figure 9. Ground Current (IGND) vs. Temperature
at Various Loads, VOUT = 3.3 V
0
1
2
3
4
5
6
7
8
9
10
11
12
13
14
0.1m 1m 10m 100m 110
I
GND
(mA)
I
LOAD
(A)
12939-110
Figure 10. Ground Current (IGND) vs. Load Current (ILOAD), VOUT = 3.3 V
ADP7159 Data Sheet
Rev. B | Page 8 of 23
0
1
2
3
4
5
6
7
8
9
10
11
12
13
14
3.8 4.0 4.2 4.4 4.6 4.8 5.0 5.2 5.4 5.6
I
GND
(mA)
V
IN
(V)
I
LOAD
= 0mA
I
LOAD
= 10mA
I
LOAD
= 100m A
I
LOAD
= 600m A
I
LOAD
= 1200mA
I
LOAD
= 2000mA
12939-011
Figure 11. Ground Current (IGND) vs. Input Voltage (VIN)
at Various Loads, VOUT = 3.3 V
12939-012
0
0.05
0.10
0.15
0.20
0.25
10m 100m 110
V
DROPOUT
(V)
I
LOAD
(A)
Figure 12. Dropout Voltage (VDROPOUT) vs. Load Current (ILOAD), VOUT = 3.3 V
3.00
3.05
3.10
3.15
3.20
3.25
3.30
3.35
3.40
3.0 3.1 3.2 3.3 3.4 3.5 3.6 3.7 3.8
V
OUT
(V)
V
IN
(V)
I
LOAD
= 0mA
I
LOAD
= 10mA
I
LOAD
= 100m A
I
LOAD
= 600m A
I
LOAD
= 1200mA
I
LOAD
= 2000mA
12939-013
Figure 13. Output Voltage (VOUT) vs. Input Voltage (VIN) in Dropout,
VOUT = 3.3 V
0
1
2
3
4
5
6
7
8
9
10
11
12
13
14
3.1 3.2 3.3 3.4 3.5 3.6 3.7 3.8
I
GND
(mA)
V
IN
(V)
I
LOAD
= 0mA
I
LOAD
= 10mA
I
LOAD
= 100mA
I
LOAD
= 600mA
I
LOAD
= 1200m A
I
LOAD
= 2000m A
12939-014
Figure 14. Ground Current (IGND) vs. Input Voltage (VIN) in Dropout,
VOUT = 3.3 V
1.15
1.16
1.17
1.18
1.19
1.20
1.21
1.22
1.23
1.24
1.25
–40 –20 020 40 60 80 100 120 140
VOUT (V)
TEMPERATURE (°C)
ILOAD = 0mA
ILOAD = 10m A
ILOAD = 100mA
ILOAD = 600mA
ILOAD = 1200mA
ILOAD = 2000mA
12939-015
Figure 15. Output Voltage (VOUT) vs. Temperature
at Various Loads, VOUT = 1.2 V
1.15
1.16
1.17
1.18
1.19
1.20
1.21
1.22
1.23
1.24
1.25
0.1m 1m 10m 100m 110
V
OUT
(V)
I
LOAD
(A)
12939-016
Figure 16. Output Voltage (VOUT) vs. Load Current (ILOAD), VOUT = 1.2 V
Data Sheet ADP7159
Rev. B | Page 9 of 23
1.15
1.16
1.17
1.18
1.19
1.20
1.21
1.22
1.23
1.24
1.25
2.3 2.7 3.1 3.5 3.9 4.3 4.7 5.1 5.5
V
OUT
(V)
V
IN
(V)
I
LOAD
= 0mA
I
LOAD
= 10mA
I
LOAD
= 100mA
I
LOAD
= 600mA
I
LOAD
= 1200m A
I
LOAD
= 2000m A
12939-017
Figure 17. Output Voltage (VOUT) vs. Input Voltage (VIN)
at Various Loads, VOUT = 1.2 V
TEMPERATURE (°C)
0
1
2
3
4
5
6
7
8
9
10
11
12
13
14
–40 –20 020 40 60 80 100 120 140
IGND (mA)
12939-018
I
LOAD
= 2000mA
I
LOAD
= 10mA
I
LOAD
= 0mA
I
LOAD
= 100m A
I
LOAD
= 600m A
I
LOAD
= 1200mA
Figure 18. Ground Current (IGND) vs. Temperature
at Various Loads, VOUT = 1.2 V
0
1
2
3
4
5
6
7
8
9
10
11
12
13
14
0.1m 1m 10m 100m 110
IGND (mA)
I
LOAD
(A)
12939-019
Figure 19. Ground Current (IGND) vs. Load Current (ILOAD), VOUT = 1.2 V
0
1
2
3
4
5
6
7
8
9
10
11
12
13
14
2.3 2.6 2.9 3.2 3.5 3.8 4.1 4.4 4.7 5.0 5.3 5.6
IGND (mA)
VIN (V)
12939-020
ILOAD = 2000mA
ILOAD = 10m A
ILOAD = 0mA
ILOAD = 100mA
ILOAD = 600mA
ILOAD = 1200mA
Figure 20. Ground Current (IGND) vs. Input Voltage (VIN)
at Various Loads, VOUT = 1.2 V
110 100 1k 10k 100k 1M
–100
–90
–80
–70
–60
–50
–40
–30
–20
–10
0
10M
PSRR ( dB)
FREQUENCY (Hz)
12939-021
I
LOAD
= 2000mA
I
LOAD
= 1200mA
I
LOAD
= 600m A
I
LOAD
= 100m A
I
LOAD
= 10mA
Figure 21. Power Supply Rejection Ratio (PSRR) vs. Frequency
at Various Loads, VOUT = 3.3 V, VIN = 4.0 V
–100
–90
–80
–70
–60
–50
–40
–30
–20
–10
0
110 100 1k 10k 100k 1M 10M
PSRR (dB)
FREQUENCY (Hz)
900mV
12939-022
800mV
700mV
600mV
500mV
Figure 22. Power Supply Rejection Ratio (PSRR) vs. Frequency
at Various Headroom Voltages, VOUT = 3.3 V, 2 A Load
ADP7159 Data Sheet
Rev. B | Page 10 of 23
–100
–90
–80
–70
–60
–50
–40
–30
–20
–10
0
0.50 0.60 0.70 0.80 0.90
PSRR (dB)
HEADROOM ( V )
10Hz
100Hz
1kHz
10kHz
100kHz
1MHz
10MHz
12939-023
Figure 23. Power Supply Rejection Ratio (PSRR) vs. Headroom Voltage
at Various Frequencies, VOUT = 3.3 V, 2 A Load
–100
–90
–80
–70
–60
–50
–40
–30
–20
–10
0
110 100 1k 10k 100k 1M 10M
PSRR ( dB)
FREQUENCY (Hz)
I
LOAD
= 10mA
I
LOAD
= 100m A
I
LOAD
= 600m A
I
LOAD
= 1200mA
I
LOAD
= 2000mA
12939-024
Figure 24. Power Supply Rejection Ratio (PSRR) vs. Frequency
at Various Loads, VOUT = 1.2 V, VIN = 2.4 V
–100
–90
–80
–70
–60
–50
–40
–30
–20
–10
0
110 100 1k 10k 100k 1M 10M
PSRR ( dB)
FREQUENCY (Hz)
1.4V
1.3V
1.2V
1.1V
1.0V
12939-025
Figure 25. Power Supply Rejection Ratio (PSRR) vs. Frequency
at Various Headroom Voltages, VOUT = 1.2 V, 2 A Load
–100
–90
–80
–70
–60
–50
–40
–30
–20
–10
0
1.0 1.1 1.2 1.3 1.4
PSRR ( dB)
HEADROOM ( V )
10Hz
100Hz
1kHz
10kHz
100kHz
1MHz
10MHz
12939-026
Figure 26. Power Supply Rejection Ratio (PSRR) vs. Headroom Voltage
at Various Frequencies, VOUT = 1.2 V, 2 A Load
–100
–90
–80
–70
–60
–50
–40
–30
–20
–10
0
110 100 1k 10k 100k 1M 10M
PSRR ( dB)
FREQUENCY (Hz)
1µF
10µF
100µF
1000µF
12939-027
Figure 27. Power Supply Rejection Ratio (PSRR) vs. Frequency
at Various CBYP Values, VOUT = 3.3 V, VIN = 4.0 V, 2 A Load
12939-028
0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
10m 100m 110
OUTPUT NOI S E ( µ V rms)
I
LOAD
(A)
10Hz TO 100kHz
100Hz TO 100kHz
Figure 28. RMS Output Noise vs. Load Current (ILOAD)
Data Sheet ADP7159
Rev. B | Page 11 of 23
12939-029
0
0.2
0.4
0.6
0.8
1
1.2
1.4
1.6
1.8
2.0
1.01.52.02.53.03.5
OUTPUT NOISE (µV rms)
OUTPUT VOLTAGE (V)
100Hz TO 100kHz
10Hz TO 100kHz
Figure 29. RMS Output Noise vs. Output Voltage
0.1
1
10
100
1k
10 100 1k 10k 100k 1M 10M
OUTPUT NOISE SPECTRAL DENSI
T
Y (nV/
Hz)
FREQUENCY (Hz)
C
BYP
= 1µF
C
BYP
= 10µF
C
BYP
= 100µF
C
BYP
= 1000µF
12939-032
Figure 30. Output Noise Spectral Density vs. Frequency
at Various Values of CBYP
0.1
1
10
100
1k
10k
100k
0.1 1 10 100 1k 10k 100k 1M
OUTPUT NOISE SPECTRAL DENSI
T
Y (nV/
Hz)
FREQUENCY (Hz)
I
LOAD
= 10mA
I
LOAD
= 100mA
I
LOAD
= 600mA
I
LOAD
= 1200mA
I
LOAD
= 2000mA
12939-033
Figure 31. Output Noise Spectral Density vs. Frequency at Various Loads,
0.1 Hz to 1 MHz
FREQUENCY (Hz)
0.1
1
10
100
1k
10 100 1k 10k 100k 1M 10M
OUTPUT NOISE SPECTRAL DENSITY (nV/Hz)
I
LOAD
= 10mA
I
LOAD
= 100mA
I
LOAD
= 600mA
I
LOAD
= 1200mA
I
LOAD
= 2000mA
12939-034
Figure 32. Output Noise Spectral Density vs. Frequency at Various Loads,
10 Hz to 10 MHz
1
2
CH1 1A CH2 10mV M4.00µs A CH1 1.00A
T21.90%
12939-135
I
OUT
V
OUT
SLEW RATE = 3A/µs
Figure 33. Load Transient Response, ILOAD = 100 mA to 2 A,
VOUT = 3.3 V, VIN = 4.0 V, Channel 1 = IOUT, Channel 2 = VOUT
1
2
CH1 1.00A
BW
CH2 10.0mV
BW
M4.00µs A CH1 700mA
T 22.60%
I
OUT
V
OUT
12939-136
SLEW RATE = 2.2A/µs
Figure 34. Load Transient Response, ILOAD = 100 mA to 2 A, VOUT = 3.3 V,
VIN = 4.0 V, COUT = 22 μF, Channel 1 = IOUT, Channel 2 = VOUT
ADP7159 Data Sheet
Rev. B | Page 12 of 23
1
2
CH1 1.00A BWCH2 10.0mV BWM4.00µs A CH1 740mA
T 20.800%
IOUT
VOUT
SL E W RATE = 3.3A/ µ s
12939-137
Figure 35. Load Transient Response, ILOAD = 100 mA to 2 A,
VOUT = 1.8 V, VIN = 2.5 V, Channel 1 = IOUT, Channel 2 = VOUT
1
2
CH1 1.00A BWCH2 10.0mV BWM4.00µs A CH1 740mA
T 20.70%
IOUT
VOUT
12939-138
SLEW RAT E = 2.4A/µs
Figure 36. Load Transient Response, ILOAD = 100 mA to 2 A, VOUT = 1.8 V,
VIN = 2.5 V, COUT = 22 µF, Channel 1 = IOUT, Channel 2 = VOUT
2
BW
M10.0µs A CH1 4.42V
T 21.1%
CH1 1V CH2 5mV
1
BW
12939-039
VOUT
VIN
SLEW RATE = 1V/µs
Figure 37. Line Transient Response, 1 V Input Step, ILOAD = 2 A,
VOUT = 3.3 V, VIN = 3.8 V, Channel 1 = VIN, Channel 2 = VOUT
2
BWM10µs A CH1 2.8V
T 21.8%
CH2 2mV
CH1 1V
1
BW
12939-040
VOUT
VIN SLEW RATE = 1V/µs
Figure 38. Line Transient Response, 1 V Input Step, ILOAD = 2 A,
VOUT = 1.8 V, VIN = 2.5 V, Channel 1 = VIN, Channel 2 = VOUT
0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
V
OUT
(V)
TIME (ms)
EN
3.3V
2.5V
1.8V
–2 –1 012345678
12939-041
Figure 39. VOUT Start-Up Time After VEN Rising
at Various Output Voltages, VIN = 5.0 V, CBYP = 1 μF
0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
–2 02 4 6810 12 14 16 18 20
V
OUT
(V)
TIME (ms)
EN
1µF
4.7µF
10µF
12939-042
Figure 40. VOUT Start-Up Time Behavior at Various Values of CBYP,
VOUT = 3.3 V
Data Sheet ADP7159
Rev. B | Page 13 of 23
THEORY OF OPERATION
The ADP7159 is an ultralow noise, high PSRR linear regulator
targeting radio frequency (RF) applications. The input voltage
range is 2.3 V to 5.5 V, and the device delivers up to 2 A of load
current. The typical shutdown current consumption is 0.2 μA at
room temperature.
Optimized for use with 10 μF ceramic capacitors, the ADP7159
provides excellent transient performance.
VREG GND (EPAD)
VOUT
VIN
EN
REF
REF_SENSE
REFERENCE
SHUTDOWN
CURRENT-LIMIT,
THERMAL
PROTECTION
BYP
VOUT_SENSE
INTERNAL
REGULATOR
OTA
12939-043
Figure 41. Simplified Internal Block Diagram
Internally, the ADP7159 consists of a reference, an error amplifier,
and a P-channel MOSFET pass transistor. The output current is
delivered via the PMOS pass device, which is controlled by the
error amplifier. The error amplifier compares the reference voltage
with the feedback voltage from the output and amplifies the
difference. If the feedback voltage is lower than the reference
voltage, the gate of the PMOS device pulls lower, allowing more
current to pass and increasing the output voltage. If the feedback
voltage is higher than the reference voltage, the gate of the
PMOS device pulls higher, allowing less current to pass and
decreasing the output voltage.
By heavily filtering the reference voltage, the ADP7159 achieves
1.7 nV/√Hz output typical from 10 kHz to 1 MHz. Because the
error amplifier is always in unity gain, the output noise is
independent of the output voltage.
The ADP7159 output voltage can be adjusted between 1.2 V and
3.3 V and is available in four models that optimize the input voltage
and output voltage ranges to keep power dissipation as low as
possible without compromising PSRR performance. The output
voltage is determined by an external voltage divider according
to the following equation:
VOUT = 1.2 V × (1 + R1/R2)
EN
BYP
VREG
ADP7159
REF_SENSE
VIN VOUT
VOUT_SENSE
C
OUT
10µF
V
OUT
= 3.3V
REF
GND (EPAD)
C
IN
10µF
C
REG
1µF
C
BYP
1µF
C
REF
1µF
R1
V
OUT
= 1.2V × (R1 + R2)/R2
1k < R2 < 200k
R2
V
IN
= 3.8V
12939-044
ON
OFF
Figure 42. Typical Adjustable Output Voltage Application Schematic
The R2 value must be greater than 1 kΩ to prevent excessive
loading of the reference voltage appearing on the REF pin. To
minimize errors in the output voltage caused by the REF_
SENSE pin input current, the R2 value must be less than 200 kΩ.
For example, when R1 and R2 each equal 100 kΩ, the output
voltage is 2.4 V. The output voltage error introduced by the
REF_SENSE pin input current is 10 mV or 0.33%, assuming a
maximum REF_SENSE pin input current of 100 nA at TA = 125°C.
The ADP7159 uses the EN pin to enable and disable the VOUT pin
under normal operating conditions. When EN is high, VOUT
turns on, and when EN is low, VOUT turns off. For automatic
startup, tie EN to VIN.
VREG
VIN
REF
VOUT
V
OUT_SENSE
REF_SENSE
BYP
(EPAD) GND
EN
7V
7V 4V4V4V4V4V
4V
4V
4V
7V
4V
4V
12939-045
Figure 43. Simplified ESD Protection Block Diagram
The ESD protection devices are shown in the block diagram as
Zener diodes (see Figure 43).
ADP7159 Data Sheet
Rev. B | Page 14 of 23
APPLICATIONS INFORMATION
ADIsimPOWER DESIGN TOOL
The ADP7159 is supported by the ADIsimPower™ design tool set.
ADIsimPower is a collection of tools that produces complete power
designs optimized for a specific design goal. The tools enable the
user to generate a full schematic, bill of materials, and calculate
performance within minutes. ADIsimPower can optimize designs
for cost, area, efficiency, and device count, taking into consideration
the operating conditions and limitations of the IC and all real
external components. For more information about, and to obtain
ADIsimPower design tools, visit www.analog.com/ADIsimPower.
CAPACITOR SELECTION
Multilayer ceramic capacitors (MLCCs) combine small size, low
ESR, low effective series inductance (ESL), and wide operating
temperature range, making them an ideal choice for bypass
capacitors. They are not without faults, however. Depending on
the dielectric material, the capacitance can vary dramatically with
temperature, dc bias, and ac signal level. Therefore, selecting the
proper capacitor results in the best circuit performance.
Output Capacitor
The ADP7159 is designed for operation with ceramic capacitors
but functions with most commonly used capacitors when care is
taken with regard to the ESR value. The ESR of the output capacitor
affects the stability of the LDO control loop. A minimum of 10 µF
capacitance with an ESR of 0.2 Ω or less is recommended to ensure
the stability of the ADP7159. Output capacitance also affects
transient response to changes in load current. Using a larger
value of output capacitance improves the transient response of
the ADP7159 to large changes in load current. Figure 44 shows
the transient responses for an output capacitance value of 10 µF.
12939-046
1
2
CH1 1ACH2 10mV M4.00µs A CH1 1.00A
T 21.90%
SLEW RAT E = 3A/µs
IOUT
VOUT
Figure 44. Output Transient Response, VOUT = 3.3 V, COUT = 10 µF,
Channel 1 = Load Current, Channel 2 = VOUT
Input and VREG Capacitor
Connecting a 10 µF or greater capacitor from VIN to ground
reduces the circuit sensitivity to PCB layout, especially when
long input traces or high source impedance are encountered.
To maintain the best possible stability and PSRR performance,
connect a 1 µF or greater capacitor from VREG to ground.
REF Capacitor
The REF capacitor, CREF, is necessary to stabilize the reference
amplifier. Connect a 1 µF or greater capacitor between REF and
ground.
BYP Capacitor
The BYP capacitor, CBYP, is necessary to filter the reference buffer.
A 1 µF capacitor is typically connected between BYP and ground.
Capacitors as small as 0.1 µF can be used; however, the output
noise voltage of the LDO increases as a result.
In addition, the BYP capacitor value can be increased to reduce
the noise below 1 kHz at the expense of increasing the start-up
time of the LDO. Very large values of CBYP significantly reduce
the noise below 10 Hz. Tantalum capacitors are recommended
for capacitors larger than approximately 33 µF because solid
tantalum capacitors are less prone to microphonic noise issues.
A 1 μF ceramic capacitor in parallel with the larger tantalum
capacitor is recommended to ensure good noise performance at
higher frequencies.
0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
110 100 1000
OUTPUT NOI S E ( µ V rms)
10Hz TO 100kHz
100Hz TO 100kHz
CBYP (µF)
12939-047
Figure 45. RMS Output Noise vs. Bypass Capacitance (CBYP)
Data Sheet ADP7159
Rev. B | Page 15 of 23
FREQUENCY (Hz)
10 100 1k 10k 100k 1M 10M
NOISE SPECTRAL DENSITY (nV/Hz)
0.1
1
10
100
1k
C
BYP
= 1µF
C
BYP
= 10µF
C
BYP
= 100µF
C
BYP
= 1000µF
12939-048
Figure 46. Noise Spectral Density vs. Frequency at Various CBYP Values
Capacitor Properties
Any good quality ceramic capacitors can be used with the
ADP7159 if they meet the minimum capacitance and maximum
ESR requirements. Ceramic capacitors are manufactured with a
variety of dielectrics, each with different behavior over temperature
and applied voltage. Capacitors must have a dielectric adequate
to ensure the minimum capacitance over the necessary tempera-
ture range and dc bias conditions. X5R or X7R dielectrics with
a voltage rating of 6.3 V to 50 V are recommended. However,
Y5V and Z5U dielectrics are not recommended because of their
poor temperature and dc bias characteristics.
Figure 47 depicts the capacitance vs. dc bias voltage of a 1206,
10 µF, 10 V, X5R capacitor. The voltage stability of a capacitor is
strongly influenced by the capacitor size and voltage rating. In
general, a capacitor in a larger package or higher voltage rating
exhibits better stability. The temperature variation of the X5R
dielectric is ~±15% over the −40°C to +85°C temperature range
and is not a function of package or voltage rating.
CAPACI TANCE (µF)
DC BIAS V OL TAGE ( V ) 1004826
0
12
10
8
6
4
2
12939-049
Figure 47. Capacitance vs. DC Bias Voltage
Use Equation 1 to determine the worst case capacitance
accounting for capacitor variation over temperature,
component tolerance, and voltage.
CEFF = CBIAS × (1 − Tempco) × (1 − TOL) (1)
where:
CBIAS is the effective capacitance at the operating voltage.
Tempco is the worst case capacitor temperature coefficient.
TOL is the worst case component tolerance.
In this example, the worst case temperature coefficient (TEMPCO)
over −40°C to +85°C is assumed to be 15% for an X5R dielectric.
The tolerance of the capacitor (TOL) is assumed to be 10%, and
CBIAS is 9.72 µF at 5 V, as shown in Figure 47.
Substituting these values in Equation 1 yields
CEFF = 9.72 µF × (1 − 0.15) × (1 − 0.1) = 7.44 µF
Therefore, the capacitor chosen in this example meets the
minimum capacitance requirement of the LDO over temperature
and tolerance at the chosen output voltage.
To guarantee the performance of the ADP7159, it is imperative
that the effects of dc bias, temperature, and tolerances on the
behavior of the capacitors be evaluated for each application.
UNDERVOLTAGE LOCKOUT (UVLO)
The ADP7159 also incorporates an internal UVLO circuit to
disable the output voltage when the input voltage is less than the
minimum input voltage rating of the regulator. The upper and
lower thresholds are internally fixed with about 200 mV of
hysteresis.
0
0.5
1.0
1.5
2.0
2.5
1.9 2.0 2.1 2.2 2.3
VOUT (V)
VIN (V)
+125°C
+25°C
–40°C
12939-050
Figure 48. Typical UVLO Behavior at Various Temperatures, VOUT = 3.3 V
Figure 48 shows the typical hysteresis of the UVLO function.
This hysteresis prevents on/off oscillations that can occur when
caused by noise on the input voltage as it passes through the
threshold points.
ADP7159 Data Sheet
Rev. B | Page 16 of 23
PROGRAMMABLE PRECISION ENABLE
The ADP7159 uses the EN pin to enable and disable the VOUT
pin under normal operating conditions. As shown in Figure 49,
when a rising voltage on EN crosses the upper threshold, nominally
1.22 V, VOUT turns on. When a falling voltage on EN crosses the
lower threshold, nominally 1.13 V, VOUT turns off. The hysteresis of
the EN threshold is approximately 90 mV.
The ADP7159 includes a discharge resistor on each VOUT,
VREG, VREF, and BYP pin. These resistors are turned on when
the device is disabled, helping to quickly discharge the associated
capacitor.
0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
1.00 1.05 1.10 1.15 1.20 1.25 1.30
V
OUT
(V)
EN PIN VOLTAGE (V)
–40°C
–5°C
+25°C
+85°C
+125°C
12939-051
Figure 49. Typical VOUT Response to EN Pin Operation
0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
–2 –1 01 2 34 5 6 7 8
VOUT (V)
TIME (ms)
EN
VOUT
12939-052
Figure 50. Typical VOUT Response to EN Pin Operation (VEN),
VOUT = 3.3 V, VIN = 5 V, CBYP = 1 µF
12939-153
1.100
1.125
1.150
1.175
1.200
1.225
1.250
2.5 3.0 3.5 4.0 4.5 5.0 5.5
EN PRECISION THRES HOL D ( V )
INPUT VOLTAGE (V)
RISING
FALLING
1.100
1.125
1.150
1.175
1.200
1.225
1.250
2.5 3.0 3.5 4.0 4.5 5.0 5.5
EN PRECISION THRES HOL D ( V )
INPUT VOLTAGE (V)
RISING
FALLING
Figure 51. Typical EN Threshold vs. Input Voltage (VIN)
The upper and lower thresholds are user programmable and can be
set higher than the nominal 1.22 V threshold by using two resistors.
The resistance values, REN1 and REN2, can be determined from
REN1 = REN2 × (VEN − 1.22 V)/1.22 V
where:
REN2 typically ranges from 10 kΩ to 100 kΩ.
VEN is the desired turn-on voltage.
The hysteresis voltage increases by the factor
(REN1 + REN2)/REN2
For the example shown in Figure 52, the EN threshold is 2.44 V
with a hysteresis of 200 mV.
EN
BYP
VREG
ADP7159
VREF_SENSE
VIN VOUT
VOUT_SENSE
C
OUT
10µF
V
OUT
= 3.3V
REF
GND
C
IN
10µF
C
REG
1µF
C
BYP
1µF
C
REF
1µF
R1
V
OUT
= 1.2V × ( R1 + R2) /R2
1kΩ < R2 < 200kΩ
R2
V
IN
= 3.8V
R
EN2
100kΩ
R
EN1
100kΩ
ON
OFF
12939-054
Figure 52. Typical EN Pin Voltage Divider
Figure 52 shows the typical hysteresis of the EN pin. This
hysteresis prevents on/off oscillations that can occur due to
noise on the EN pin as it passes through the threshold points.
Data Sheet ADP7159
Rev. B | Page 17 of 23
START-UP TIME
The ADP7159 uses an internal soft start to limit the inrush
current when the output is enabled. The start-up time for a
3.3 V output is approximately 1.2 ms from the time the EN
active threshold is crossed to when the output reaches 90% of
its final value.
The rise time in seconds of the output voltage (10% to 90%) is
approximately 0.0012 × CBYP, where CBYP is in microfarads.
0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
246810 12 14 16 18 20
V
OUT
(V)
TIME (ms)
–2 0
EN
1µF
4.7µF
10µF
12939-055
Figure 53. Typical Start-Up Behavior with CBYP = 1 µF to 10 µF
0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
20 40 60 80 100 120 140 160
V
OUT
(V)
TIME (ms)
EN
10µF
47µF
100µF
–20 0
12939-056
Figure 54. Typical Start-Up Behavior with CBYP = 10 µF to 100 µF
REF, BYP, AND VREG PINS
REF, BYP, and VREG generate voltages internally (VREF, VBYP,
and VREG) that require external bypass capacitors for proper
operation. Do not, under any circumstances, connect any loads
to these pins, because doing so compromises the noise and
PSRR performance of the ADP7159. Using larger values of CBYP,
CREF, and CREG is acceptable but can increase the start-up time,
as described in the Start-Up Time section.
CURRENT-LIMIT AND THERMAL SHUTDOWN
The ADP7159 is protected against damage due to excessive power
dissipation by current and thermal overload protection circuits.
The ADP7159 is designed to current limit when the output load
reaches 3 A (typical). When the output load exceeds 3 A, the
output voltage is reduced to maintain a constant current limit.
When the ADP7159 junction temperature exceeds 150°C, the
thermal shutdown circuit turns off the output voltage, reducing
the output current to zero. Extreme junction temperature can be
the result of high current operation, poor circuit board design, or
high ambient temperature. A 15°C hysteresis is included so that
the ADP7159 does not return to operation after thermal
shutdown until the on-chip temperature falls below 135°C. When
the device exits thermal shutdown, a soft start is initiated to
reduce the inrush current.
Current limit and thermal shutdown protections are intended to
protect the device against accidental overload conditions. Cases
with a hard short from VOUT to ground or an extremely long
soft-start timer typically cause the device to experience thermal
oscillations between the current limit and thermal shutdown.
THERMAL CONSIDERATIONS
In applications with a low input to output voltage differential, the
ADP7159 does not dissipate much heat. However, in applications
with high ambient temperature and/or high input voltage, the
heat dissipated in the package can become large enough that it
causes the junction temperature of the die to exceed the
maximum junction temperature of 125°C.
The junction temperature of the die is the sum of the ambient
temperature of the environment and the temperature rise of the
package due to the power dissipation, as shown in Equation 2.
To guarantee reliable operation, the junction temperature of the
ADP7159 must not exceed 125°C. To ensure that the junction
temperature stays below this maximum value, the user must be
aware of the parameters that contribute to junction temperature
changes. These parameters include ambient temperature, power
dissipation in the power device, and thermal resistances between
the junction temperature and ambient air (θJA). The θJA number
is dependent on the package assembly compounds used, as well as
the amount of copper used to solder the package ground and the
exposed pad to the PCB.
ADP7159 Data Sheet
Rev. B | Page 18 of 23
Table 7 shows typical θJA values of the 8-lead SOIC and 10-lead
LFCSP packages for various PCB copper sizes.
Table 8 shows the typical ΨJB values of the 8-lead SOIC and
10-lead LFCSP.
Table 7. Typical θJA Values
θ
JA (°C/W)
Copper Size (mm2) 10-Lead LFCSP 8-Lead SOIC
251 130.2 123.8
100 93.0 90.4
500 65.8 66.0
1000 55.6 56.6
6400 44.1 45.5
1 Device soldered to minimum size pin traces.
Table 8. Typical ΨJB Values
Package ΨJB (°C/W)
10-Lead LFCSP 29.1
8-Lead SOIC 30.1
The junction temperature of the ADP7159 is calculated from the
following equation:
TJ = TA + (PD × θJA) (2)
where:
TA is the ambient temperature.
PD is the power dissipation in the die, given by
PD = ((VINVOUT) × ILOAD) + (VIN × IGND) (3)
where:
VIN and VOUT are the input and output voltages, respectively.
ILOAD is the load current.
IGND is the ground current.
Power dissipation caused by ground current is quite small and
can be ignored. Therefore, the junction temperature equation
simplifies to the following equation:
TJ = TA + (((VINVOUT) × ILOAD) × θJA) (4)
As shown in Equation 4, for a given ambient temperature, input
to output voltage differential, and continuous load current, a
minimum copper size requirement exists for the PCB to ensure
that the junction temperature does not rise above 125°C.
The heat dissipation from the package can be improved by
increasing the amount of copper attached to the pins and exposed
pad of the ADP7159. Adding thermal planes underneath the
package also improves thermal performance. However, as shown
in Table 7, a point of diminishing returns is eventually reached,
beyond which an increase in the copper area does not yield
significant reduction in the junction to ambient thermal
resistance.
Figure 55 to Figure 60 show junction temperature calculations
for different ambient temperatures, power dissipation, and areas
of PCB copper.
0
20
40
60
80
100
120
140
0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4 2.6 2.8 3.0
JUNCTION TEMPER
A
TURE (°C)
TOTA L P OWE R DISSIPATION (W )
6400mm
2
500mm
2
25mm
2
T
J
MAXIMUM
12939-057
Figure 55. Junction Temperature vs. Total Power Dissipation for
the 10-Lead LFCSP, TA = 25°C
20
40
60
80
100
120
140
0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4 2.6
JUNCTION TEMPER
A
TURE (°C)
TOTAL POWER D ISSIPATION ( W)
6400mm2
500mm2
25mm2
TJ MAXIMUM
12939-058
Figure 56. Junction Temperature vs. Total Power Dissipation for
the 10-Lead LFCSP, TA = 50°C
JUNCTION TEMPER
A
TURE (°C)
80
85
90
95
100
105
110
115
120
125
130
0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0
TOTAL POWER D ISSIPATION ( W)
6400mm
2
500mm
2
25mm
2
T
J
MAXIMUM
12939-059
Figure 57. Junction Temperature vs. Total Power Dissipation for
the 10-Lead LFCSP, TA = 85°C
Data Sheet ADP7159
Rev. B | Page 19 of 23
JUNCTION TEMPER
A
TURE (°C)
0
20
40
60
80
100
120
140
0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4
TOTAL POWER DISSIPATIO N (W)
6400mm
2
500mm
2
25mm
2
T
J
MAXIMUM
12939-060
Figure 58. Junction Temperature vs. Total Power Dissipation for
the 8-Lead SOIC, TA = 25°C
40
50
60
70
80
90
100
110
120
130
0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8
JUNCTION TE M P E
R
A
TURE (°C)
TOTAL P OWER DI S SIPATION (W)
6400mm
2
500mm
2
25mm
2
T
J
MAXIMUM
12939-061
Figure 59. Junction Temperature vs. Total Power Dissipation for
the 8-Lead SOIC, TA = 50°C
80
85
90
95
100
105
110
115
120
125
130
0 0.10.20.30.40.50.60.70.80.91.0
JUNCTI ON TE M P E
R
A
TURE (°C)
TOTAL POW ER DISSIPATIO N (W)
T
J
MAXIMUM
12939-062
6400mm
2
500mm
2
25mm
2
Figure 60. Junction Temperature vs. Total Power Dissipation for
the 8-Lead SOIC, TA = 85°C
Thermal Characterization Parameter (ΨJB)
When board temperature is known, use the thermal character-
ization parameter, ΨJB, to estimate the junction temperature rise
(see Figure 61 and Figure 62). Maximum junction temperature
(TJ) is calculated from the board temperature (TB) and power
dissipation (PD) using the following formula:
TJ = TB + (PD × ΨJB) (5)
The typical value of ΨJB is 29.1°C/W for the 10-lead LFCSP
package and 30.1°C/W for the 8-lead SOIC package.
0
20
40
60
80
100
120
140
0 0.51.01.52.02.53.03.54.04.55.05.56.0
JUNCTI ON TE M P E
R
A
TURE (°C)
TOTAL POW ER DISSIPATIO N (W)
T
B
= 25°C
T
B
= 50°C
T
B
= 65°C
T
B
= 85°C
T
J
MAXIMUM
12939-063
Figure 61. Junction Temperature vs. Total Power Dissipation for
the 10-Lead LFCSP
0
20
40
60
80
100
120
140
0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0
JUNCTION TEM P E
R
A
TURE (°C)
TOTAL POWER D ISSIPATION (W)
T
J
MAXIMUM
T
B
= 25° C
T
B
= 50° C
T
B
= 65° C
T
B
= 85° C
12939-064
Figure 62. Junction Temperature vs. Total Power Dissipation for
the 8-Lead SOIC
ADP7159 Data Sheet
Rev. B | Page 20 of 23
PSRR PERFORMANCE
The ADP7159 is available in four models that optimize power
dissipation and PSRR performance as a function of input and
output voltage. See Table 9 and Table 10 for selection guides.
It is recommended to select the corresponding product model for a
particular output voltage range to achieve optimized PSRR
performance. For example, select the ADP7159-04 model for VOUT
= 3.3 V to achieve >65 dB PSRR (10 Hz to 100 kHz) with 500 mV
headroom.
When considering a VOUT = 1.8 V case, note that all four product
models can generate a 1.8 V output, but the ADP7159-01 model
provides the best PSRR performance, though other models, like the
ADP7159-04, are still capable of generating a 1.8 V output for
PSRR relaxed applications.
The ADP7159 supports a 2.3 V to 5.5 V input range. Typically, a
minimum 500 mV headroom is required to achieve the best PSRR
performance above the maximum output voltage (VOUT_MAX) at
2 A. For example, the ADP7159-04 requires a minimum 3.8 V
input voltage to achieve the best PSRR performance for a 3.3 V
output at 2 A.
Table 9. Model Selection Guide for PSRR
Model VOUT_MAX (V)
PSRR (dB) at 2 A; VIN = VOUT_MAX + 0.5 V PSRR (dB) at 1.2 A; VIN = VOUT_MAX + 0.5 V
10 kHz 100 kHz 1 MHz 10 kHz 100 kHz 1 MHz
ADP7159-01 1.8 55 55 40 70 78 52
ADP7159-02 2.3 61 55 45 72 70 53
ADP7159-03 2.9 65 65 45 75 78 55
ADP7159-04 3.3 68 70 45 82 72 55
Table 10. Model Selection Guide for Input Voltage
Model Adjustable VOUT Range (V) VOUT Range (V) for Optimized PSRR VREG (V) VIN Range (V)
ADP7159-01 1.2 to 1.8 1.2 to 1.8 2.1 2.3 to 5.5
ADP7159-02 1.2 to 2.3 1.8 to 2.3 2.6 2.8 to 5.5
ADP7159-03 1.2 to 2.9 2.3 to 2.9 3.2 3.4 to 5.5
ADP7159-04 1.2 to 3.3 2.9 to 3.3 3.6 3.8 to 5.5
Data Sheet ADP7159
Rev. B | Page 21 of 23
PCB LAYOUT CONSIDERATIONS
Place the input capacitor as close as possible between the VIN pin
and ground. Place the output capacitor as close as possible between
the VOUT pin and ground. Place the bypass capacitors (CREG, CREF,
and CBYP) for VREG, VREF, and VBYP close to the respective pins
(VREG, REF, and BYP) and ground. The use of a 0805, a 0603,
or a 0402 size capacitor achieves the smallest possible footprint
solution on boards where area is limited. Maximize the amount
of ground metal for the exposed pad, and use as many vias as
possible on the component side to improve thermal dissipation.
12939-065
Figure 63. Sample 10-Lead LFCSP PCB Layout
12939-066
Figure 64. Sample 8-Lead SOIC PCB Layout
ADP7159 Data Sheet
Rev. B | Page 22 of 23
OUTLINE DIMENSIONS
2.48
2.38
2.23
0.50
0.40
0.30
10
1
6
5
0.30
0.25
0.20
PIN 1 INDEX
AREA
SEATING
PLANE
0.80
0.75
0.70
1.74
1.64
1.49
0.20 REF
0.05 MAX
0.02 NO M
0.50 BSC
EXPOSED
PAD
3.10
3.00 SQ
2.90
PIN 1
INDICATOR
(R 0.15)
FO R P ROPE R CONNECT ION OF
THE EXPOSED PAD, REFER TO
THE P IN CO NFIGURATIO N AND
FUNCT IO N DE S CRIPT IONS
SECTION OF THIS DATA SHEET.
COPLANARITY
0.08
02-05-2013-C
TOP VIEW BOTTOM VIEW
0.20 MIN
Figure 65. 10-Lead Lead Frame Chip Scale Package [LFCSP]
3 mm × 3 mm Body and 0.75 mm Package Height
(CP-10-9)
Dimensions shown in millimeters
COMPLIANT TO JEDE C S TANDARDS MS-012-AA
06-02-2011-B
1.27
0.40
1.75
1.35
2.29
2.29
0.356
0.457
4.00
3.90
3.80
6.20
6.00
5.80
5.00
4.90
4.80
0.10 MAX
0.05 NO M
3.81 REF
0.25
0.17
0.50
0.25
45°
COPLANARITY
0.10
1.04 REF
8
14
5
1.27 BSC
SEATING
PLANE
FO R P ROPE R CONNECT ION OF
THE EXPOSED PAD, REFER TO
THE P IN CO NFIGURATIO N AND
FUNCT IO N DE S CRIPT IONS
SECTION OF THIS DATA SHEET.
BOTTOM VIEW
TOP VIEW
0.51
0.31
1.65
1.25
Figure 66. 8-Lead Standard Small Outline Package, with Exposed Pad [SOIC_N_EP]
Narrow Body
(RD-8-1)
Dimensions shown in millimeters
Data Sheet ADP7159
Rev. B | Page 23 of 23
ORDERING GUIDE
Model1, 2 Temperature Range Output Voltage Range (V)
Package
Description Package Option Branding
ADP7159ACPZ-01-R7 −40°C to +125°C 1.2 to 1.8 10-Lead LFCSP CP-10-9 LSG
ADP7159ACPZ-02-R7 −40°C to +125°C 1.2 to 2.3 10-Lead LFCSP CP-10-9 LSH
ADP7159ACPZ-03-R7 −40°C to +125°C 1.2 to 2.9 10-Lead LFCSP CP-10-9 LSJ
ADP7159ACPZ-04-R7 −40°C to +125°C 1.2 to 3.3 10-Lead LFCSP CP-10-9 LSK
ADP7159ARDZ-01-R7 40°C to +125°C 1.2 to 1.8 8-Lead SOIC_N_EP RD-8-1
ADP7159ARDZ-02-R7 40°C to +125°C 1.2 to 2.3 8-Lead SOIC_N_EP RD-8-1
ADP7159ARDZ-03-R7 40°C to +125°C 1.2 to 2.9 8-Lead SOIC_N_EP RD-8-1
ADP7159ARDZ-04-R7 40°C to +125°C 1.2 to 3.3 8-Lead SOIC_N_EP RD-8-1
ADP7159CP-04-EVALZ Evaluation Board
ADP7159RD-04-EVALZ
Evaluation Board
1 Z = RoHS Compliant Part.
2 To order a device with voltage options other than the listed options, contact your local Analog Devices sales or distribution representative.
©2016 Analog Devices, Inc. All rights reserved. Trademarks and
registered trademarks are the property of their respective owners.
D12939-0-11/16(B)