IXTK 100N25P IXTQ 100N25P IXTT 100N25P PolarHTTM Power MOSFET VDSS = 250 V ID25 = 100 A RDS(on) 27 m N-Channel Enhancement Mode Avalanche Rated Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25 C to 150 C TJ = 25 C to 150 C; RGS = 1 M 250 250 V V VGSS VGSM Continuous Transient 20 30 V V ID25 TC = 25 C 100 A ID(RMS) External lead current limit 75 A IDM TC = 25 C, pulse width limited by TJM 250 A IAR TC = 25 C 60 A EAR TC = 25 C 60 mJ EAS TC = 25 C 2.0 J dv/dt IS IDM, di/dt 100 A/s, VDD VDSS, TJ 150 C, RG = 4 10 V/ns PD TC = 25 C 600 W -55 ... +150 150 -55 ... +150 C C C 300 260 C C TJ TJM Tstg TL TSOLD 1.6 mm (0.062 in.) from case for 10 s Plastic body for 10 s Md Mounting torque Weight TO-3P TO-264 TO-268 TO-264 (IXTK) G g g g G Characteristic Values Min. Typ. Max. BVDSS VGS = 0 V, ID = 250 A 250 VGS(th) VDS = VGS, ID = 250A 2.5 IGSS VGS = 20 VDC, VDS = 0 IDSS VDS = VDSS VGS = 0 V RDS(on) TJ = 125 C VGS = 10 V, ID = 0.5 ID25 Pulse test, t 300 s, duty cycle d 2 % V 100 nA 25 250 A A 27 m (TAB) S G S G = Gate S = Source D (TAB) D = Drain TAB = Drain Features l l V 5.0 D TO-268 (IXTT) l Symbol Test Conditions (TJ = 25 C, unless otherwise specified) D (TAB) S TO-3P (IXTQ) 1.13/10 Nm/lb.in. 5.5 10 5.0 D International standard packages Unclamped Inductive Switching (UIS) rated Low package inductance - easy to drive and to protect Advantages l l l Easy to mount Space savings High power density DS99118E(12/05) (c) 2006 IXYS All rights reserved http://store.iiic.cc/ IXTK 100N25P IXTQ 100N25P IXTT 100N25P TO-3P (IXTQ) Outline Symbol Test Conditions Characteristic Values (TJ = 25 C, unless otherwise specified) Min. Typ. Max. gfs VDS= 10 V; ID = 0.5 ID25, pulse test 40 Ciss S 6300 pF 1150 pF Crss 240 pF td(on) 25 ns Coss VGS = 0 V, VDS = 25 V, f = 1 MHz 56 tr VGS = 10 V, VDS = 0.5 VDSS, ID = ID25 td(off) RG = 3.3 (External) 26 ns 100 ns 28 ns 185 nC 43 nC 91 nC tf Qg(on) Qgs VGS= 10 V, VDS = 0.5 VDSS, ID = 0.5 ID25 Qgd RthJC 0.21 C/W RthCS TO-3P 0.21 C/W RthCS TO-264 0.15 C/W Source-Drain Diode Characteristic Values (TJ = 25 C, unless otherwise specified) Min. Typ. Max. Symbol Test Conditions IS VGS = 0 V 100 A ISM Repetitive 250 A VSD IF = IS, VGS = 0 V, Pulse test, t 300 s, duty cycle d 2 % 1.5 V trr QRM IF = 25 A, -di/dt = 100 A/s VR = 100 V, VGS = 0 V 200 3.0 TO-264 (IXTK) Outline ns C TO-268 (IXTT) Outline IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered by 4,835,592 one or moreof the following U.S. patents: 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123 B1 6,306,728 B1 http://store.iiic.cc/ 6,404,065 B1 6,534,343 6,583,505 6,683,344 6,710,405B2 6,710,463 6,727,585 6,759,692 6,771,478 B2 IXTK 100N25P IXTQ 100N25P IXTT 100N25P Fig. 2. Exte nde d Output Char acte ris tics @ 25C Fig. 1. Output Char acte r is tics @ 25C 250 100 V GS = 10V 9V 8V 90 80 9V 200 175 ID - Amperes 70 ID - Amperes V GS = 10V 225 60 50 7V 40 30 6V 20 8V 150 125 100 7V 75 50 10 6V 25 5V 0 0 0 0.5 1 1.5 2 2.5 3 3.5 0 2 4 6 8 Fig. 3. Output Characte r is tics @ 125C 14 16 18 20 2.8 V GS = 10V 9V 8V 80 V GS = 10V 2.6 2.4 RDS(on) - Normalized 90 70 ID - Amperes 12 Fig. 4. RDS(on ) Norm alize d to 0.5 ID25 V alue vs . Junction Te m pe r atur e 100 7V 60 50 40 30 6V 20 2.2 2 1.8 I D = 100A 1.6 1.4 I D = 50A 1.2 1 10 0.8 5V 0 0.6 0 1 2 3 4 V DS - V olts 5 6 -50 7 -25 50 75 100 125 150 90 V GS = 10V 3.1 25 Fig. 6. Dr ain Cur r e nt vs . Cas e Te m pe r ature 0.5 ID25 V alue vs . ID 3.4 0 TJ - Degrees Centigrade Fig. 5. RDS(on) Nor m alize d to 80 2.8 External Lead C urrent Lim it 70 2.5 TJ = 125C ID - Amperes RDS(on) - Normalized 10 V DS - V olts V DS - V olts 2.2 1.9 1.6 1.3 60 50 40 30 20 TJ = 25C 1 0.7 10 0 0 25 50 75 100 125 150 175 200 225 250 ID - A mperes (c) 2006 IXYS All rights reserved http://store.iiic.cc/ -50 -25 0 25 50 75 100 TC - Degrees Centigrade 125 150 IXTK 100N25P IXTQ 100N25P IXTT 100N25P Fig. 8. Trans conductance Fig. 7. Input Adm ittance 90 150 80 125 TJ = -40C 25C 125C 100 75 50 TJ = 125C 25C -40C 25 60 gfs - Siemens ID - Amperes 70 50 40 30 20 10 0 0 4 4.5 5 5.5 6 6.5 7 7.5 8 0 25 50 75 V GS - V olts Fig. 9. Source Cur r e nt vs . Sour ce -To-Drain V oltage 125 150 175 200 Fig. 10. Gate Charge 10 300 V DS = 125V 9 250 I D = 50A 8 I G = 10m A 7 200 V G S - Volts IS - Amperes 100 ID - A mperes 150 100 6 5 4 3 TJ = 125C 2 TJ = 25C 50 1 0 0 0.4 0.6 0.8 1 1.2 V SD - V olts 0 1.4 20 40 60 80 100 120 140 160 180 200 QG - nanoCoulombs Fig. 12. For w ar d-Bias Safe Ope r ating Are a Fig. 11. Capacitance 1000 10000 TJ = 150C TC = 25C C is s ID - Amperes Capacitance - picoFarads R DS (on) Lim it 1000 C os s 100s 100 25s 1m s 10m s DC 10 f = 1MH z C rs s 100 1 0 5 10 15 20 25 V DS - V olts 30 35 40 10 IXYS reserves the right to change limits, test conditions, and dimensions. http://store.iiic.cc/ 100 V DS - V olts 1000 IXTK 100N25P IXTQ 100N25P IXTT 100N25P Fig. 13. M axim um Trans ie nt The rm al Re s is tance R(th)JC - C/W 1.00 0.10 0.01 1 10 100 Pulse Width - milliseconds (c) 2006 IXYS All rights reserved http://store.iiic.cc/ 1000