VCE = 2500 V
IC = 2000 A
ABB StakPak H Series
Press-pack IGBT
5SNX 20H2500
preliminary
Doc. No. 5SYB 0116-03 June 04
• High SOA
• High tolerance to uneven
mounting pressure
• Suitable for series connection
• Explosion resistant package
• Modular design concept,
available for a wide range of
current ratings
Maximum Rated Values1)
Parameter2) Symbol Conditions min max Unit
Collector-emitter voltage VCES 2500 V
DC collector current IC T
c = 75 °C 2000 A
Repetitive peak collector
current ICM 4000 A
Gate-emitter voltage VGES ± 20 V
Total power dissipation Ptot T
c = 25 °C, (IGBT) 18000 W
DC forward current IF T
c = 75 °C 2000 A
Repetitive peak forward
current IFM 4000 A
Surge current IFSM VR = 0 V, tp = 10 ms, Tvj = 125 °C,
half-sinewave 23 kA
IGBT short circuit SOA tpsc VCC = 1500 V, VCEM ≤ 2500 V,
VGE ≤15V 10 µs
Junction temperature Tvj 5 125 °C
Storage temperature Tstg -40 70 °C
Mounting force 2) F
M 65 95 kN
1)Maximum rated values indicate limits beyond which damage to the device may occur per IEC 60747-9
2)For detailed mounting instructions refer to ABB document no. 5SYA 2037-02
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.
5SNX 20H2500
IGBT Characteristic Values3)
Parameter Symbol Conditions min typ max Unit
Tvj = 25°C 2.20 2.60 V
Collector-emitter saturation
voltage VCEsat IC = 2000 A,
VGE = 15 V Tvj = 125°C 2.70 3.00 V
Collector cut-off current ICES V
CE = 2500 V, VGE = 0 V, Tvj = 125 °C 35 100 mA
Gate leakage current IGES VCE = 0 V, VGE = ±20 V, Tvj = 125 °C ±500 nA
Gate-emitter threshold voltage VGE(TO) I
C = 360 mA, VCE = VGE, Tvj = 25 °C 5 7 8.5 V
Total gate charge Qge IC = 2000 A, VCE = 1250 V, VGE = -15 to
15 V 18.6 µC
Input capacitance Cies 315 nF
Output capacitance Coes 25.5 nF
Reverse transfer capacitance Cres
VCE = 25 V, VGE = 0 V, f = 1 MHz
5.3 nF
Tvj = 25°C 1.2 µs
Turn-on delay time td(on) Tvj = 125°C 1.1 µs
Tvj = 25°C 0.9 µs
Rise time tr
VCC = 1250 V,
IC = 2000 A,
RG = 3.9 Ω,
VGE = ±15 V,
Lσ = 200 nH
inductive load Tvj = 125°C 1.0 µs
Tvj = 25°C 2.0 µs
Turn-off delay time td(off) Tvj = 125°C 2.3 µs
Tvj = 25°C 0.7 µs
Fall time tf
VCC = 1250 V,
IC = 2000 A,
RG = 3.3 Ω,
VGE = ±15 V,
Lσ = 200 nH
inductive load Tvj = 125°C 0.7 µs
Tvj = 25°C 3.0 J
Turn-on energy Eon
VCC = 1250 V,
IC = 2000 A,
RG = 3.9 Ω,
VGE = ±15 V,
Lσ = 200 nH
inductive load
Tvj = 125°C 4.0 J
Tvj = 25°C 3.0 J
Turn-off energy Eoff
VCC = 1250 V,
IC = 2000 A,
RG = 3.3 Ω,
VGE = ±15 V,
Lσ = 200 nH
inductive load
Tvj = 125°C 3.6 J
Tvj = 25°C 12000 A
Short circuit current ISC
VCC = 1500 V,
RGon = 3.9 Ω,
RGoff = 22 Ω,
VGE ≤ 15 V,
Lσ = 200 nH
tpsc =10 µs
Tvj = 125°C 11000 A
3)Characteristic values according to IEC 60747-9
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.
Doc. No. 5SYB 0116-03 June 04 page 2 of 9
5SNX 20H2500
Diode Characteristic Values4)
Parameter Symbol Conditions min typ max Unit
Tvj = 25°C 1.95 2.20 V
Forward voltage VF I
F = 2000 A Tvj = 125°C 1.90 2.20 V
Tvj = 25°C 1100 A
Reverse recovery current Irr Tvj = 125°C 1600 A
Tvj = 25°C 1000 µC
Reverse recovery charge Qrr Tvj = 125°C 1900 µC
Tvj = 25°C 1.7 µs
Reverse recovery time trr Tvj = 125°C 1.8 µs
Tvj = 25°C 0.9 J
Reverse recovery energy Erec
VCC = 1250 V,
IF = 2000 A,
RG = 3.9 Ω,
VGE = ±15 V,
Lσ = 200 nH
inductive load
Tvj = 125°C 1.7 J
4)Characteristic values according to IEC 60747-2
Thermal Properties
Parameter Symbol Conditions min typ max Unit
IGBT thermal resistance
junction to case
Rth(j-c)
IGBT 5.5 K/kW
Diode thermal resistance
junction to case
Rth(j-c)
Diode
11 K/kW
IGBT thermal resistance case
to heatsink
Rth(c-h)
IGBT 1 K/kW
Diode thermal resistance
case to heatsink
Rth(c-h)
Diode
Heatsink flatness :
Complete module area < µm
Each submodule area < 50 µm
Roughness : < 6.3 µm 2 K/kW
Operating junction
temperature Tvjop 5 125 °C
Mechanical Properties
Parameter Symbol Conditions min typ max Unit
Dimensions L* W* H Typical , see outline drawing 236*150*26 mm
Clearance distance DC acc. IEC 60664-1 and EN50124-1 10 mm
Surface creepage distance DSC acc. IEC 60664-1 and EN50124-1 23 mm
Weight 2.2 kg
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.
Doc. No. 5SYB 0116-03 June 04 page 3 of 9
5SNX 20H2500
Electrical configuration
AE (Aux. Emitter)G (Gate)
C (Collector) E (Emitter)
Outline drawing
StakPak H6
This is an electrostatic sensitive device.
Please observe the international standard IEC 60747-1, chapter IX.
This product has been designed and qualified for Industrial Level.
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.
Doc. No. 5SYB 0116-03 June 04 page 4 of 9
5SNX 20H2500
0.5 1.5 2.5 3.5 4.5
VCE [V]
0
1000
2000
3000
4000
IC [A]
25 °C
125 °C
1.0 1.5 2.0 2.5
VF [V]
0
1000
2000
3000
4000
IF [A]
25 °C
125 °C
Fig. 1 Typical IGBT on-state characteristics Fig. 2
Typical diode on-state characteristics
0
500
1000
1500
2000
2500
3000
3500
4000
4500
5000
5500
6000
6500
7000
7500
8000
8500
9000
02468
VCE[V]
IC[A]
VGE = 9 V
VGE = 10 V
VGE = 11 V
VGE = 12 V
VGE = 13 V
VGE = 14 V
VGE = 15 V
10
Tvj = 25 °C
0
500
1000
1500
2000
2500
3000
3500
4000
4500
5000
5500
6000
6500
7000
7500
8000
8500
9000
02468
VCE[V]
IC[A]
VGE = 9 V
VGE = 10 V
VGE = 11 V
VGE = 12 V
VGE = 13 V
VGE = 14 V
VGE = 15 V
10
Tvj = 125 °C
Fig. 3 Typical IGBT output characteristics
at Tvj = 25 °C
Fig. 4 Typical IGBT output characteristics
at Tvj = 125 °C
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.
Doc. No. 5SYB 0116-03 June 04 page 5 of 9
5SNX 20H2500
8 9 10 11 12 13 14 15
VGE [V]
0
1500
3000
4500
6000
7500
9000
IC [A]
VCE = 15 V
25° C
125 °C
500 1000 1500 2000 2500 3000
VCE [V]
0
500
1000
1500
2000
2500
3000
3500
4000
4500
Ic [A]
VCC ≤ 1500 V
VGE = +/- 15 V
Rgon = 3.9 Ohm
Rgoff = 3.3 Ohm
Tvj = 125°C
Fig. 5 Typical IGBT transfer characteristics Fig. 6 IGBT turn-off safe operating area
(RBSOA)
0 5 10 15 20 25 30
VCE [V]
1
10
100
2
3
4
5
6
7
8
2
3
4
5
6
7
8
2
3
4
5
C [nF]
VOSC = 50 mV
VGE = 0 V
f = 1 MHz
Cies
Cres
Coes
036912
Qge [µC]
0
3
6
9
12
VGE [V]
VCC = 750, 1000, 1250 V
IC = 2000 A
VGE = - 15 ...+ 15 V
Tvj = 25°C
VCC = 750 V
VCC = 1250 V
Fig. 7 Typical IGBT capacitances versus
collector-emitter voltage
Fig. 8 Typical IGBT gate charge
characteristics
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.
Doc. No. 5SYB 0116-03 June 04 page 6 of 9
5SNX 20H2500
0 1000 2000 3000 4000
ICE [A]
0
2
4
6
8
10
Eon, Eoff [J]
VCC = 1250 V
VGE = +/- 15 V
RGon = 3.9 Ohm
RGoff = 3.3 Ohm
Tvj = 125°C
Eoff
Eon
0 4 8 12 16 20
RG [Ohm]
0
2
4
6
8
Eon, Eoff [J]
VCC = 1250 V
VGE = +/- 15 V
ICE = 2000 A
Tvj = 125°C
Eoff
Eon
Fig. 9 Typical IGBT switching energies per
pulse versus on-state current
Fig. 10 Typical IGBT switching energies per
pulse versus gate resistor
800 1600 2400 3200 4000
ICE [A]
0.0
0.5
1.0
1.5
2.0
2.5
3.0
tf, tdoff [µs]
VCC = 1250 V
VGE = +/- 15 V
RGon = 3.9 Ohm
RGoff = 3.3 Ohm
Tvj = 125°C
tdoff
tdon
tr
tf
0.0
0.4
0.8
1.2
1.6
2.0
2.4
tr, tdon [µs]
048121620
RG [Ohm]
0
2
4
6
8
10
tdoff [µs]
VCC = 1250 V
ICE = 2000 A
VGE = +/- 15 V
Tvj = 125°C
tr
tdoff
tf
tdon
0
1
2
3
4
5
tf, tr, tdon [µs]
Fig. 11 Typical IGBT switching times versus
on-state current
Fig. 12 Typical IGBT switching times versus
gate resistor
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.
Doc. No. 5SYB 0116-03 June 04 page 7 of 9
5SNX 20H2500
0 800 1600 2400 3200 4000
IF [A]
0
500
1000
1500
2000
2500
3000
Irr, Qrr [A, µC]
VCC = 1250 V
VGE = +/- 15 V
RGon = 3.9 Ohm
Tvj = 125°C
Irr
Qrr
Erec
0.0
0.5
1.0
1.5
2.0
2.5
3.0
Erec [J]
024681012
RG [Ohm]
0
500
1000
1500
2000
2500
Irr [A], Qrr [µC],
VCC = 1250 V
ICE = 2000 A
VGE = +/- 15 V
Tvj = 125°C
Qrr
Erec
Irr
0.0
0.4
0.8
1.2
1.6
2.0
Erec [J]
Fig. 13 Typical diode reverse recovery
characteristics versus forward current
Fig. 14 Typical diode reverse recovery
characteristics versus gate resistor
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.
Doc. No. 5SYB 0116-03 June 04 page 8 of 9
5SNX 20H2500
Analytical function for transient thermal
impedance:
)e-(1R = (t)Z
n
1i
t/-
ic)-(jth i
∑
=
τ
i 1 2 3 4
Ri(K/kW) 2.284 2.306 0.472 0.402
IGBT
τi(ms) 580.8 53.11 3.286 0.609
Ri(K/kW) 4.569 4.611 0.945 0.804
DIODE
τi(ms) 580.8 53.11 3.286 0.609
10-3 10-2 10-1 100101
2 3 4 5 6 789 2 3 4 5 6 7 89 2 3 4 5 6 789 2 3 4 5 6 789
t [s]
100
101
2
3
4
5
6
7
8
9
2
3
4
5
6
7
8
9
2
ZthIC [K/kW]
Fm = 65...95 kN
Double Side Cooling
IGBT
Diode
Fig.15 Maximum thermal impedance of IGBT
and diode versus time
Environmental class according to IEC 60721
Mode Class Document - no.
Storage IE 11 5 SZK 9101-01
Transportation IE 23 5 SZK 9102-01
Operation IE 33 5 SZK 9103-01
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.
ABB Switzerland Ltd Doc. No. 5SYB 0116-03 June 04
Semiconductors
Fabrikstrasse 3
CH-5600 Lenzburg, Switzerland
Telephone +41 (0)58 586 1419
Fax +41 (0)58 586 1306
Email abbsem@ch.abb.com
Internet www.abb.com/semiconductors
