BCP51...BCP53
1 Jul-23-2001
PNP Silicon AF Transistors
For AF driver and output stages
High collector current
Low collector-emitter saturation voltage
Complementary types: BCP54...BCP56 (NPN)
VPS05163
123
4
Type Marking Pin Configuration Package
BCP51
BCP51-10
BCP51-16
BCP52
BCP52-10
BCP52-16
BCP53
BCP53-10
BCP53-16
BCP 51
BCP 51-10
BCP 51-16
BCP 52
BCP 52-10
BCP 52-16
BCP 53
BCP 53-10
BCP 53-16
1 = B
1 = B
1 = B
1 = B
1 = B
1 = B
1 = B
1 = B
1 = B
2 = C
2 = C
2 = C
2 = C
2 = C
2 = C
2 = C
2 = C
2 = C
3 = E
3 = E
3 = E
3 = E
3 = E
3 = E
3 = E
3 = E
3 = E
4 = C
4 = C
4 = C
4 = C
4 = C
4 = C
4 = C
4 = C
4 = C
SOT223
SOT223
SOT223
SOT223
SOT223
SOT223
SOT223
SOT223
SOT223
BCP51...BCP53
2 Jul-23-2001
Maximum Ratings
Parameter Symbol BCP51 BCP52 BCP53 Unit
Collector-emitter voltage VCEO 45 60 80 V
Collector-emitter voltage RBE
1k
VCER 45 60 100
Collector-base voltage VCBO 45 60 100
Emitter-base voltage VEBO 5 5 5 ADC collector current 1
IC
Peak collector current 1.5
ICM
Base current IBmA100
IBM
Peak base current 200 W
Total power dissipation, TS = 124 °C Ptot 1.5
Junction temperature Tj150 °C
Storage temperature Tst
g
-65 ... 150
Thermal Resistance
Junction - soldering point1) RthJS
17 K/W
1For calculation of RthJA please refer to Application Note Thermal Resistance
BCP51...BCP53
3 Jul-23-2001
Electrical Characteristics at TA = 25°C, unless otherwise specified.
Parameter Symbol Values Unit
min. typ. max.
DC Characteristics
Collector-emitter breakdown voltage
IC = 10 mA, IB = 0
BCP51
BCP52
BCP53
V(BR)CEO
45
60
80
-
-
-
-
-
-
V
Collector-base breakdown voltage
IC = 100 µA, IB = 0
BCP51
BCP52
BCP53
V(BR)CBO
45
60
100
-
-
-
-
-
-
Emitter-base breakdown voltage
IE = 10 µA, IC = 0 V(BR)EBO 5 - -
Collector cutoff current
VCB = 30 V, IE = 0 ICBO - - 100 nA
Collector cutoff current
VCB = 30 V, IE = 0 , TA = 150 °C ICBO - - 20 µA
DC current gain 1)
IC = 5 mA, VCE = 2 V hFE 25 - - -
DC current gain 1)
IC = 150 mA, VCE = 2 V
BCP51...53
hFE-grp.10
hFE-grp.16
hFE
40
63
100
-
100
160
250
160
250
DC current gain 1)
IC = 500 mA, VCE = 2 V hFE 25 - -
Collector-emitter saturation voltage1)
IC = 500 mA, IB = 50 mA VCEsat - - 0.5 V
Base-emitter voltage 1)
IC = 500 mA, VCE = 2 V VBE(ON) - - 1
AC Characteristics
Transition frequency
IC = 50 mA, VCE = 10 V, f = 100 MHz fT- 125 - MHz
1) Pulse test: t ≤=300µs, D = 2%
BCP51...BCP53
4 Jul-23-2001
Transition frequency fT = f (IC)
VCE = 10V
10
EHP00260BCP 51...53
03
10mA
1
10
3
10
5
5
101102
102
C
T
fMHz
Ι
Total power dissipation Ptot = f(TS)
0 20 40 60 80 100 120 °C 150
TS
0
0.2
0.4
0.6
0.8
1
1.2
W
1.6
Ptot
Collector cutoff current ICBO = f (TA)
VCB = 30V
0
10
EHP00262BCP 51...53
A
T
150
-1
4
10
Ι
CBO nA
50 100
0
10
1
10
3
10
C
102
max
typ
DC current gain hFE = f (IC)
VCE = 2V
10
EHP00261BCP 51...53
04
10mA
0
10
3
10
5
5
10
1
10
2
10
1
C
FE
h
Ι
3
10
2
10
C
100
5
25
C
-50
C
BCP51...BCP53
5 Jul-23-2001
Collector-emitter saturation voltage
IC = f (VCEsat), hFE = 10
0
10
EHP00264BCP 51...53
CEsat
V
0.4 V 0.8
0
101
102
4
10
5
5
Ι
CmA
5
3
10
0.2 0.6
C
100
25
C
C
-50
Base-emitter saturation voltage
IC = f (VBEsat), hFE = 10
0
10
EHP00263BCP 51...53
BEsat
V
0
4
10
Ι
C
mA
0.2
1
10
2
10
3
10
0.4 0.6 0.8 1.2V
C
100
25
C
-50
C
Permissible pulse load
Ptotmax / PtotDC = f (tp)
10
EHP00265BCP 51...53
-6 -5
10
0
10s
0
10
2
10
5
5
10
-4
10
-3
10
-2
10
1
5
D
=
0.005
0.01
0.02
0.05
0.1
0.2
0.5
0
totmax
tot
P
DC
P
p
t
t
p
=
DT
t
p
T
