PD7M441H P2H7M441H MOSFET 50A 450 450500V PD7M441H/440H PD7M440H P2H7M440H P2H7M441H/440H 108.0 108.0 Approximate Weight :220g Approximate Weight :220g Maximum Ratings Rating VDSS Drain-Source Voltage Gate-Source Voltage Duty=50% Continuous Drain Current D.C. Pulsed Drain Current Total Power Dissipation Operating Junction Temperature Range Storage Temperature Range RMS Isolation Voltage Mounting 1 Torque Symbol Grade PD7M441H/P2H7M441H PD7M440H/P2H7M440H Unit 450 500 V VGS=0V VGSS 20 V ID 50c=25 35c=25 A IDM 100c=25 A PD 350c=25 W Tjw -40+150 Tstg -40+125 Viso Ftor 2000 - ,AC1 Terminals to Base, AC 1 min . 3.0 Module Base to Heat sink 2.0 Bus bar to Main Terminals http://store.iiic.cc/ V Nm Electrical CharacteristicsTC25 unless otherwise noted Characteristic Symbol Zero Gate Voltage Drain Current Gate-Source Threshold Voltage Gate-Source Leakage Current MOSFET Static Drain-Source On-Resistance Drain-Source On-Voltage Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Maximum Value Min. Typ. Max. Unit VDSVDSS, VGS0V 1 Tj125, VDSVDSS, VGS0V 4 VDSVGS, ID1mA 2 3.1 4 V VGS20V, VDS0V 1 A rDS on VGS10V, ID25A 110 120 m VDS on VGS10V, ID25A 3.2 3.4 V gfg VDS15V, ID25A 45 S 9.0 nF 1.7 nF Crss 0.32 nF ton d 120 ns 80 ns 240 ns 50 ns IDSS VGS th IGSS Ciss Coss tr toff d VGS0V VDS25V f1MHz VDD1/2VDSS ID25A VGS-5V, 10V RG7 tf mA Source-Drain Diode Ratings and CharacteristicsTC25 unless otherwise noted Characteristic Continuous Source Current Pulsed Source Current Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Condition Symbol IS Condition D. C. ISM VSD trr Qr IS50A IS50A -diS/dt100A/s Maximum Value Min. Typ. Max. Unit 35 A 100 A 1.9 V 100 ns 0.15 C Thermal Characteristics Characteristic Symbol - Thermal Resistance, Junction to Case Rthj-c - Thermal Resistance, Case to Heatsink Rthc-f Condition Maximum Value Min. Typ. Max. MOSFET 0.36 Diode 2.0 Mounting surface flat, smooth, and greased 0.1 311 http://store.iiic.cc/ Unit /W Fig. 2 Typical Drain-Source On-Voltage Fig. 2 Vs. Gate-Source Voltage TC=25 250s Pulse Test 10V 60 40 VGS=5V 20 4V 2 4 6 8 10 DRAIN TO SOURCE VOLTAGE VDS (V) VGS=0V f=1kHz Ciss 9 6 Coss Crss 1 2 5 10 20 50 DRAIN TO SOURCE VOLTAGE VDS (V) Fig. 7 Typical Switching Time Fig. 7 Vs. Drain Current SOURCE CURRENT IS (A) SWITCHING TIME t (ns) 200 td(on) 100 tr tf 50 10 8 4 1 2 5 10 20 DRAIN CURRENT ID (A) 50 100 Fig. 10 Maximum Safe Operating Area TC=25 Tj=150MAX Single Pulse Operation in this area is limited by RDS (on) 100 10s 0 80 160 240 320 400 TOTAL GATE CHRAGE Qg (nC) 160 2 1 0.5 toff ton Tj=125 Tj=25 40 0 0.3 0.6 0.9 1.2 1.5 SOURCE TO DRAIN VOLTAGE VSD (V) Fig. 11-1 Normalized Transient Thermal impedance(MOSFET) 100s 20 2 5 10 20 50 100 SERIES GATE IMPEDANCE RG ( ) 200 Fig. 9 Typical Reverse Recovery Characteristics 60 0 0.1 480 80 50 DRAIN CURRENT ID (A) 0 40 80 120 JUNCTION TEMPERATURE Tj ( ) ID=25A VDD=250V TC=25 80s Pulse Test 10 250s Pulse Test 200 10 0 -40 0.2 20 20 15A 4 5 100 td(off) 25A ID=35A 120 500 8 VDD= 100V 250V 400V Fig. 8 Typical Source-Drain Diode Forward Fig. 8 Characteristics RG=7 VDD=250V TC=25 80s Pulse Test 1000 12 Fig. 6 Typical Switching Time Fig. 6 Vs. Series Gate impedance 12 0 100 ID=50A 16 1ms IS=50A 500 REVERSE RECOVERY TIME trr (ns) REVERSE CURRENT IR (A) 0 4 8 12 GATE TO SOURCE VOLTAGE VGS (V) 16 GATE TO SOURCE VOLTAGE VGS (V) CAPACITANCE C (nF) 15 3 0 Fig. 5 Typical Gate Charge Fig. 5 Vs. Gate-Source Voltage 18 12 15A 2 0 12 Fig. 4 Typical Capacitance Fig. 4 Vs. Drain-Source Voltage 25A VGS=10V 250s Pulse Test 16 SWITCHING TIME t (s) 0 4 NORMALIZED TRANSIENT THERMAL IMPEDANCE [rth(j-c) / Rth(j-c)] 0 ID=50A 6 IS=25A Tj=150 200 trr 100 50 IR 20 10 5 1.8 0 100 200 300 400 -dis/dt (A/s) 500 600 2 10 0 5 2 10 -1 Per Unit Base Rth(j-c)=0.36/W 1 Shot Pulse 5 2 10 -2 -5 10 10 -4 10 -3 10 -2 10 -1 PULSE DURATION t (s) 10 0 10 1 5 2 10ms Fig. 11-2 Normalized Transient Thermal impedance(DIODE) 1 DC 0.5 0.2 1 2 -441H -440H 5 10 20 50 100 200 500 1000 DRAIN TO SOURCE VOLTAGE VDS (V) 312 http://store.iiic.cc/ NORMALIZED TRANSIENT THERMAL IMPEDANCE [rth(j-c) / Rth(j-c)] DRAIN CURRENT ID (A) 6V TC=25 250s Pulse Test 8 DRAIN TO SOURCE ON VOLTAGE VDS (on)(V) 80 Fig. 3 Typical Drain-Source On Voltage Fig. 3 Vs. Junction Temperature DRAIN TO SOURCE ON VOLTAGE VDS (on)(V) Fig. 1 Typical Output Characteristics 2 10 0 5 2 10 -1 Per Unit Base Rth(j-c)=2.0/W 1 Shot Pulse 5 2 10 -2 -5 10 10 -4 10 -3 10 -2 10 -1 PULSE DURATION t (s) 10 0 10 1