MJE13003 SWITCHMODEt Series NPN Silicon Power Transistor These devices are designed for high-voltage, high-speed power switching inductive circuits where fall time is critical. They are particularly suited for 115 and 220 V SWITCHMODE applications such as Switching Regulators, Inverters, Motor Controls, Solenoid/Relay drivers and Deflection circuits. http://onsemi.com 1.5 AMPERES NPN SILICON POWER TRANSISTORS 300 AND 400 VOLTS 40 WATTS Features * Reverse Biased SOA with Inductive Loads @ TC = 100_C * Inductive Switching Matrix 0.5 to 1.5 A, 25 and 100_C tc @ 1 A, 100_C is 290 ns (Typ) * 700 V Blocking Capability * SOA and Switching Applications Information * Pb-Free Package is Available* MAXIMUM RATINGS IIIIIIIIIIII III IIII III IIIIIIIIIIII III IIII III IIIIIIIIIIII III IIII III IIIIIIIIIIII III IIII III IIIIIIIIIIII III III IIII IIIIIIIIIIII III IIII III IIII IIIIIIIIIIII III III IIIIIIIIIIII III IIII III IIIIIIIIIIII III IIII III IIIIIIIIIIII III III IIII IIIIIIIIIIII III IIII III IIIIIIIIIIII III IIII III IIIIIIIIIIII IIIIIII III IIIIIIIIIIII III IIII III IIIIIIIIIIII III IIII III IIIIIIIIIIII III IIII III IIIIIIIIIIII III IIII III Symbol Value Unit Collector-Emitter Voltage Rating VCEO(sus) 400 Vdc Collector-Emitter Voltage VCEV 700 Vdc Emitter Base Voltage VEBO 9 Vdc IC Adc Collector Current - Continuous - Peak (Note 1) ICM 1.5 3 Base Current - Continuous - Peak (Note 1) IB IBM 0.75 1.5 Adc Emitter Current - Continuous - Peak (Note 1) IE IEM 2.25 4.5 Adc Total Power Dissipation @ TA = 25_C Derate above 25_C PD 1.4 11.2 W mW/_C Total Power Dissipation @ TC = 25_C Derate above 25_C PD 40 320 W mW/_C TJ, Tstg -65 to +150 _C Symbol Max Unit Thermal Resistance, Junction-to-Case RqJC 3.12 _C/W Thermal Resistance, Junction-to-Ambient RqJA 89 _C/W Maximum Load Temperature for Soldering Purposes: 1/8 from Case for 5 Seconds TL 275 _C Operating and Storage Junction Temperature Range TO-225 CASE 77 STYLE 3 3 2 1 MARKING DIAGRAM 1 BASE YWW JE 13003G 2 COLLECTOR 3 EMITTER THERMAL CHARACTERISTICS Characteristic Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied, damage may occur and reliability may be affected. 1. Pulse Test: Pulse Width = 5 ms, Duty Cycle 10%. Y WW JE13003 G = Year = Work Week = Device Code = Pb-Free Package ORDERING INFORMATION Device Package Shipping MJE13003 TO-225 500 Units/Box TO-225 (Pb-Free) 500 Units/Box MJE13003G *For additional information on our Pb-Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. (c) Semiconductor Components Industries, LLC, 2006 January, 2006 - Rev. 2 1 Publication Order Number: MJE13003/D MJE13003 IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIII IIIII III III IIII III IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIII IIIII III III IIII III IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIII IIIII III III IIII III IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIII IIIII III III IIII III IIIIIIIIIIIIIIIIIIII IIIII III III IIII III IIIIIIIIIIIIIIIIIIII IIIII III III IIII III IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIII IIIII III III IIII III IIIIIIIIIIIIIIIIIIII IIIII IIIIIIII III IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIII IIIII IIIIIIII III IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIII IIIII IIIIIIII III IIIIIIIIIIIIIIIIIIII IIIII III III IIII III IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIII IIIII III III IIII III IIIIIIIIIIIIIIIIIIII III IIIII III IIII III IIIIIIIIIIIIIIIIIIII IIIII III III IIII III IIIIIIIIIIIIIIIIIIII IIIII III III IIII III IIIIIIIIIIIIIIIIIIII IIIII III III IIII III IIIIIIIIIIIIIIIIIIII IIIII III III IIII III IIIIIIIIIIIIIIIIIIII IIIII III III IIII III IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIII IIIII III III IIII III IIIIIIIIIIIIIIIIIIII IIIII III III IIII III IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIII IIIII III III IIII III IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIII IIIII III III IIII III IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIII IIIIIIIIIIIII IIIII III III IIII III IIIIIIII IIIII III III IIII III IIIIIIIIIIIII IIIIIIIIIIIII IIIIIIII IIIII III III IIII III IIIIIIII IIIII III III IIII III IIIIIIIIIIIII IIIIIIII IIIIIIIIIIIII IIIII III III IIII III IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIII IIIIIIIIIIIII IIIII III III IIII III IIIIIIII IIIII III III IIII III IIIIIIIIIIIII IIIIIIIIIIIII IIIIIIII IIIII III III IIII III IIIIIIII IIIIIIIIIIIII IIIII III III IIII III ELECTRICAL CHARACTERISTICS (TC = 25_C unless otherwise noted) Characteristic Symbol Min Typ Max Unit Collector-Emitter Sustaining Voltage (IC = 10 mA, IB = 0) VCEO(sus) 400 - - Vdc Collector Cutoff Current (VCEV = Rated Value, VBE(off) = 1.5 Vdc) (VCEV = Rated Value, VBE(off) = 1.5 Vdc, TC = 100_C) ICEV - - - - 1 5 Emitter Cutoff Current (VEB = 9 Vdc, IC = 0) IEBO - - 1 OFF CHARACTERISTICS (Note 2) mAdc mAdc SECOND BREAKDOWN Second Breakdown Collector Current with bass forward biased Clamped Inductive SOA with base reverse biased IS/b See Figure 11 - RBSOA See Figure 12 - ON CHARACTERISTICS (Note 2) DC Current Gain (IC = 0.5 Adc, VCE = 2 Vdc) (IC = 1 Adc, VCE = 2 Vdc) hFE Collector-Emitter Saturation Voltage (IC = 0.5 Adc, IB = 0.1 Adc) (IC = 1 Adc, IB = 0.25 Adc) (IC = 1.5 Adc, IB = 0.5 Adc) (IC = 1 Adc, IB = 0.25 Adc, TC = 100_C) VCE(sat) Base-Emitter Saturation Voltage (IC = 0.5 Adc, IB = 0.1 Adc) (IC = 1 Adc, IB = 0.25 Adc) (IC = 1 Adc, IB = 0.25 Adc, TC = 100_C) VBE(sat) - 8 5 - - 40 25 - - - - - - - - 0.5 1 3 1 - - - - - - 1 1.2 1.1 Vdc Vdc DYNAMIC CHARACTERISTICS Current-Gain - Bandwidth Product (IC = 100 mAdc, VCE = 10 Vdc, f = 1 MHz) Output Capacitance (VCB = 10 Vdc, IE = 0, f = 0.1 MHz) fT 4 10 - MHz Cob - 21 - pF td - 0.05 0.1 ms SWITCHING CHARACTERISTICS Resistive Load (Table 1) Delay Time Rise Time Storage Time (VCC = 125 Vdc, IC = 1 A, IB1 = IB2 = 0.2 A, tp = 25 ms, Duty Cycle v 1%) Fall Time tr - 0.5 1 ms ts - 2 4 ms tf - 0.4 0.7 ms tsv - 1.7 4 ms tc - 0.29 0.75 ms tfi - 0.15 - ms Inductive Load, Clamped (Table 1, Figure 13) Storage Time Crossover Time (IC = 1 A, Vclamp = 300 Vdc, IB1 = 0.2 A, VBE(off) = 5 Vdc, TC = 100_C) Fall Time 2. Pulse Test: PW = 300 ms, Duty Cycle v 2%. http://onsemi.com 2 VCE , COLLECTOR-EMITTER VOLTAGE (VOLTS) MJE13003 80 hFE , DC CURRENT GAIN 60 TJ = 150C 40 30 25C 20 -55 C 10 8 VCE = 2 V VCE = 5 V 6 4 0.02 0.03 0.05 0.07 0.1 0.2 0.3 0.5 0.7 IC, COLLECTOR CURRENT (AMP) 1 2 2 TJ = 25C 1.6 1.2 IC = 0.1 A 1.5 A 0.4 0 0.002 0.005 0.01 0.02 0.05 0.1 0.2 IB, BASE CURRENT (AMP) 1 2 0.35 VBE(sat) @ IC/IB = 3 VBE(on) @ VCE = 2 V 1 0.3 V, VOLTAGE (VOLTS) 1.2 TJ = -55C 25C 0.8 25C 0.6 0.05 0.07 0.1 0.2 0.3 0.25 IC/IB = 3 0.2 TJ = -55C 0.15 25C 0.1 150C 150C 0.4 0.02 0.03 0.05 0.5 0.7 1 0 0.02 0.03 2 0.05 0.07 0.1 0.2 0.3 0.5 0.7 1 IC, COLLECTOR CURRENT (AMP) IC, COLLECTOR CURRENT (AMP) Figure 3. Base-Emitter Voltage Figure 4. Collector-Emitter Saturation Region 104 2 500 VCE = 250 V 300 Cib 200 C, CAPACITANCE (pF) 103 TJ = 150C 102 125C 100C 101 75C 50C 30 20 10 7 5 0.1 0.2 25C REVERSE FORWARD -0.2 0 +0.2 +0.4 VBE, BASE-EMITTER VOLTAGE (VOLTS) +0.6 Figure 5. Collector Cutoff Region Cob 0.5 1 2 5 10 20 50 100 200 500 1000 VR, REVERSE VOLTAGE (VOLTS) Figure 6. Capacitance http://onsemi.com 3 TJ = 25C 100 70 50 100 10-1 -0.4 0.5 Figure 2. Collector Saturation Region 1.4 V, VOLTAGE (VOLTS) 1A 0.8 Figure 1. DC Current Gain IC, COLLECTOR CURRENT (A) 0.3 A 0.5 A MJE13003 Table 1. Test Conditions for Dynamic Performance RESISTIVE SWITCHING REVERSE BIAS SAFE OPERATING AREA AND INDUCTIVE SWITCHING +5 V TEST CIRCUITS 0.001 mF DUTY CYCLE 10% tr, tf 10 ns 2N222 2 1k 68 L IB 1 k 2N2905 270 IC RB 1 +5 Vk 1N4933 0.02 mF NOTE PW and VCC Adjusted for Desired IC RB Adjusted for Desired IB1 CIRCUIT VALUES +125 V MJE210 MR826* 47 100 1/2 W Coil Data: Ferroxcube Core #6656 Full Bobbin (~200 Turns) #20 T.U.T. Vclamp *SELECTED FOR 1 kV 5.1 k VCE 51 TEST WAVEFORMS TUT SCOPE RB D1 -4.0 V MJE200 - VBE(off) GAP for 30 mH/2 A Lcoil = 50 mH VCC = 20 V Vclamp = 300 Vdc OUTPUT WAVEFORMS IC RC 33 1N4933 5V PW VCC 33 1N4933 VCC = 125 V RC = 125 W D1 = 1N5820 or Equiv. RB = 47 W +10.3 V 25 ms tf CLAMPED t1 Adjusted to Obtain IC IC(pk) t t1 VCE tf t1 VCEor Vclamp TIME t2 t t2 Lcoil (IC pk) VCC Lcoil (IC pk) Vclamp http://onsemi.com 4 Test Equipment Scope-Tektronics 475 or Equivalent 0 - 8.5 V tr, tf < 10 ns Duty Cycle = 1.0% RB and RC adjusted for desired IB and IC MJE13003 Vclamp 90% Vclamp IC III IIIIIIIIII III III III III III IIII III III III III IIIIIIIIII III III III III III III IIII III III III III III III IIII III III III III III IIIIIIIIII III III III III III IIII III III III III IIIIIIIIIIIII III III III Table 2. Typical Inductive Switching Performance ICPK tsv 90% IC trv tfi tti tc VCE IB 10% Vclamp 90% IB1 10% ICPK 2% IC IC AMP TC _C tsv ms trv ms tfi ms tti ms tc ms 0.5 25 100 1.3 1.6 0.23 0.26 0.30 0.30 0.35 0.40 0.30 0.36 1 25 100 1.5 1.7 0.10 0.13 0.14 0.26 0.05 0.06 0.16 0.29 1.5 25 100 1.8 3 0.07 0.08 0.10 0.22 0.05 0.08 0.16 0.28 TIME Figure 7. Inductive Switching Measurements NOTE: All Data Recorded in the Inductive Switching Circuit in Table 1 SWITCHING TIMES NOTE In resistive switching circuits, rise, fall, and storage times have been defined and apply to both current and voltage waveforms since they are in phase. However, for inductive loads which are common to SWITCHMODE power supplies and hammer drivers, current and voltage waveforms are not in phase. Therefore, separate measurements must be made on each waveform to determine the total switching time. For this reason, the following new terms have been defined. tsv = Voltage Storage Time, 90% IB1 to 10% Vclamp trv = Voltage Rise Time, 10-90% Vclamp tfi = Current Fall Time, 90-10% IC tti = Current Tail, 10-2% IC tc = Crossover Time, 10% Vclamp to 10% IC An enlarged portion of the inductive switching waveforms is shown in Figure 7 to aid in the visual identity of these terms. For the designer, there is minimal switching loss during storage time and the predominant switching power losses occur during the crossover interval and can be obtained using the standard equation from AN-222: PSWT = 1/2 VCCIC(tc)f In general, t rv + t fi ] t c. However, at lower test currents this relationship may not be valid. As is common with most switching transistors, resistive switching is specified at 25_C and has become a benchmark for designers. However, for designers of high frequency converter circuits, the user oriented specifications which make this a "SWITCHMODE" transistor are the inductive switching speeds (tc and tsv) which are guaranteed at 100_C. http://onsemi.com 5 MJE13003 RESISTIVE SWITCHING PERFORMANCE 2 VCC = 125 V IC/IB = 5 TJ = 25C 1 tr 0.3 0.2 td @ VBE(off) = 5 V 0.1 r(t), EFFECTIVE TRANSIENT THERMAL RESISTANCE (NORMALIZED) 2 1 0.7 0.5 0.07 0.05 tf 0.3 0.2 0.03 0.02 0.02 0.03 1 0.7 0.5 0.05 0.07 0.1 0.5 0.7 10 0.1 0.02 0.03 20 0.05 0.07 0.1 0.2 0.3 0.5 0.7 IC, COLLECTOR CURRENT (AMP) IC, COLLECTOR CURRENT (AMP) Figure 8. Turn-On Time Figure 9. Turn-Off Time 0.1 ZqJC(t) = r(t) RqJC RqJC = 3.12C/W MAX D CURVES APPLY FOR POWER PULSE TRAIN SHOWN READ TIME AT t1 TJ(pk) - TC = P(pk) RqJC(t) 0.05 0.02 0.03 0.01 0.01 0.3 1 2 0.2 0.2 0.02 0.2 D = 0.5 0.3 0.1 0.07 0.05 VCC = 125 V IC/IB = 5 TJ = 25C ts 3 t, TIME (s) t, TIME (s) 0.7 0.5 10 7 5 0.01 SINGLE PULSE 0.02 0.03 0.05 0.1 0.2 0.3 0.5 1 2 3 5 10 20 t, TIME OR PULSE WIDTH (ms) Figure 10. Thermal Response http://onsemi.com 6 50 P(pk) t1 t2 DUTY CYCLE, D = t1/t2 100 200 500 1000 MJE13003 The Safe Operating Area figures shown in Figures 11 and 12 are specified ratings for these devices under the test conditions shown. SAFE OPERATING AREA INFORMATION FORWARD BIAS There are two limitations on the power handling ability of a transistor: average junction temperature and second breakdown. Safe operating area curves indicate IC - VCE limits of the transistor that must be observed for reliable operation; i.e., the transistor must not be subjected to greater dissipation than the curves indicate. The data of Figure 11 is based on TC = 25_C; T J(pk) is variable depending on power level. Second breakdown pulse limits are valid for duty cycles to 10% but must be derated when TC 25_C. Second breakdown limitations do not derate the same as thermal limitations. Allowable current at the voltages shown on Figure 11 may be found at any case temperature by using the appropriate curve on Figure 13. T J(pk) may be calculated from the data in Figure 10. At high case temperatures, thermal limitations will reduce the power that can be handled to values less than the limitations imposed by second breakdown. IC, COLLECTOR CURRENT (AMP) 10 5 2 100 ms 1 10 ms 5.0ms dc 0.5 1.0 ms TC = 25C 0.2 THERMAL LIMIT (SINGLE PULSE) BONDING WIRE LIMIT SECOND BREAKDOWN LIMIT CURVES APPLY BELOW RATED VCEO 0.1 0.0 5 0.02 0.01 5 MJE13003 10 20 50 100 200 300 VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS) 500 Figure 11. Active Region Safe Operating Area REVERSE BIAS For inductive loads, high voltage and high current must be sustained simultaneously during turn-off, in most cases, with the base to emitter junction reverse biased. Under these conditions the collector voltage must be held to a safe level at or below a specific value of collector current. This can be accomplished by several means such as active clamping, RC snubbing, load line shaping, etc. The safe level for these devices is specified as Reverse Bias Safe Operating Area and represents the voltage-current conditions during reverse biased turn-off. This rating is verified under clamped conditions so that the device is never subjected to an avalanche mode. Figure 12 gives RBSOA characteristics. 1.2 VBE(off) = 9 V TJ 100C IB1 = 1 A 0.8 MJE13003 0.4 5V 3V 0 0 100 200 300 1.5 V 400 500 600 700 800 VCEV, COLLECTOR-EMITTER CLAMP VOLTAGE (VOLTS) Figure 12. Reverse Bias Safe Operating Area 1 POWER DERATING FACTOR IC, COLLECTOR CURRENT (AMP) 1.6 SECOND BREAKDOWN DERATING 0.8 0.6 THERMAL DERATING 0.4 0.2 0 20 40 60 80 100 120 140 TC, CASE TEMPERATURE (C) Figure 13. Forward Bias Power Derating http://onsemi.com 7 160 MJE13003 PACKAGE DIMENSIONS TO-225 CASE 77-09 ISSUE Z -B- U F NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. 077-01 THRU -08 OBSOLETE, NEW STANDARD 077-09. C Q M -A- 1 2 3 H K J V G R 0.25 (0.010) S M A M B M D 2 PL 0.25 (0.010) M A M B M DIM A B C D F G H J K M Q R S U V INCHES MIN MAX 0.425 0.435 0.295 0.305 0.095 0.105 0.020 0.026 0.115 0.130 0.094 BSC 0.050 0.095 0.015 0.025 0.575 0.655 5_ TYP 0.148 0.158 0.045 0.065 0.025 0.035 0.145 0.155 0.040 --- MILLIMETERS MIN MAX 10.80 11.04 7.50 7.74 2.42 2.66 0.51 0.66 2.93 3.30 2.39 BSC 1.27 2.41 0.39 0.63 14.61 16.63 5 _ TYP 3.76 4.01 1.15 1.65 0.64 0.88 3.69 3.93 1.02 --- STYLE 3: PIN 1. BASE 2. COLLECTOR 3. EMITTER SWITCHMODE is a trademark of Semiconductor Components Industries, LLC. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. "Typical" parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including "Typicals" must be validated for each customer application by customer's technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT: N. American Technical Support: 800-282-9855 Toll Free Literature Distribution Center for ON Semiconductor USA/Canada P.O. Box 61312, Phoenix, Arizona 85082-1312 USA Phone: 480-829-7710 or 800-344-3860 Toll Free USA/Canada Japan: ON Semiconductor, Japan Customer Focus Center 2-9-1 Kamimeguro, Meguro-ku, Tokyo, Japan 153-0051 Fax: 480-829-7709 or 800-344-3867 Toll Free USA/Canada Phone: 81-3-5773-3850 Email: orderlit@onsemi.com http://onsemi.com 8 ON Semiconductor Website: http://onsemi.com Order Literature: http://www.onsemi.com/litorder For additional information, please contact your local Sales Representative. MJE13003/D