Semiconductor
1
CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.
1-800-4-HARRIS |Copyright © Harris Corporation 1998
RFM4N35, RFM4N40, RFP4N35, RFP4N40
4A, 350V and 400V, 2.000 Ohm, N-Channel
Power MOSFETs
These are N-channel enhancement-mode silicon-gate
power field effect transistors designed for applications such
as switching regulators, switching converters, motor drivers,
relay drivers, and drivers for high power bipolar switching
transistors requiring high speed and low gate-drive power.
These types can be operated directly from integrated
circuits.
Formerly developmental type TA17404.
Features
• 4A, 350V and 400V
•r
DS(ON) = 2.000Ω
• Related Literature
- TB334 “Guidelines for Soldering Surface Mount
Components to PC Boards”
Symbol
Packaging
JEDEC TO-204AA JEDEC TO-220AB
Ordering Information
PART NUMBER PACKAGE BRAND
RFM4N35 TO-204AA RFM4N35
RFM4N40 TO-204AA RFM4N40
RFP4N35 TO-220AB RFP4N35
RFP4N40 TO-220AB RFP4N40
NOTE: When ordering, use the entire part number.
D
G
S
DRAIN
(FLANGE)
SOURCE (PIN 2)
GATE (PIN 1)
DRAIN
(FLANGE)
DRAIN
GATE
SOURCE
Data Sheet October 1998 File Number 1491.3
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[ /Title
(RFM4N
35,
RFM4N
40,
RFP4N3
5,
RFP4N4
0)
/
Subject
(4A,
350V
and
400V,
2.000
Ohm, N-
Channel
Power
MOS-
FETs)
/
Author
()
/
Key-
words
(Harris
Semi-
conduc-
tor, N-
Channel
Power
MOS-
FETs,
TO-
204AA,
TO-
220AB)
/
Creator
()
2
Absolute Maximum Ratings TC = 25oC Unless Otherwise Specified
RFM4N35 RFM4N40 RFP4N35 RFP4N40 UNITS
Drain to Source Voltage (Note 1). . . . . . . . . . . . . . . . . . . . . . . . . . .VDS 350 400 350 400 V
Drain to Gate Voltage (RGS = 1MΩ) (Note 1) . . . . . . . . . . . . . . . VDGR 350 400 350 400 V
Continuous Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .ID4444A
Pulsed Drain Current (Note 3) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IDM 8888A
Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .VGS ±20 ±20 ±20 ±20 V
Maximum Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .PD75 75 60 60 W
Linear Derating Factor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.6 0.6 0.48 0.48 W/oC
Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . .TJ,T
STG -55 to 150 -55 to 150 -55 to 150 -55 to 150 oC
Maximum Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . . . TL
Package Body for 10s, See Techbrief 334 (for TO-220). . . . . . . .Tpkg 300
260 300
260 300
260 300
260
oC
oC
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operationofthe
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTE:
1. TJ= 25oC to 125oC.
Electrical Specifications TC = 25oC, Unless Otherwise Specified
PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS
Drain to Source Breakdown Voltage BVDSS ID = 250µA, VGS = 0
RFM4N40, RFP4N40 400 - - V
RFM4N35, RFP4N35 350 - - V
Gate Threshold Voltage VGS(TH) VGS = VDS, ID = 250µA (Figure 8) 2 - 4 V
Zero-Gate Voltage Drain Current IDSS VDS = Rated BVDSS --1µA
VDS = 0.8 x Rated BVDSS, TC = 125oC- -25µA
Gate to Source Leakage Current IGSS VGS = ±20V, VDS = 0 - - ±100 nA
Drain to Source On Resistance (Note 2) rDS(ON) ID = 4A, VGS = 10V (Figures 6, 7) - - 2.000 Ω
Drain to Source On-Voltage (Note 2) VDS(ON) ID = 4A, VGS = 10V - - 8 V
Turn-On Delay Time tD(ON) VDD = 200V, ID= 2A, RG= 50Ω
RL= 100Ω, VGS = 10V
(Figures 10, 11, 12)
-1245ns
Rise Time tr-4260ns
Turn-Off Delay Time tD(OFF) - 130 200 ns
Fall Time tf- 62 100 ns
Input Capacitance CISS VDS = 25V,
VGS = 0V
f = 1MHz (Figure 9)
- - 750 pF
Output Capacitance COSS - - 150 pF
Reverse-Transfer Capacitance CRSS - - 100 pF
Thermal Resistance Junction to Case RθJC RFM4N35, RFM4N40 - - 1.67 oC/W
RFP4N35, RFP4N40 - - 2.083 oC/W
Source to Drain Diode Specifications
PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS
Source to Drain Diode Voltage (Note 2) VSD ISD = 2A - - 1.4 V
Reverse Recorvery Time trr ISD = 4A, dISD/dt = 100A/µs - 800 - ns
NOTES:
2. Pulse Test: Pulse Width ≤ 300µs, Duty Cycle ≤ 2%.
3. Repetitive rating: pulse width limited by maximum junction temperature.
RFM4N35, RFM4N40, RFP4N35, RFP4N40
3
Typical Performance Curves
FIGURE 1. NORMALIZED POWER DISSIPATION vs CASE
TEMPERATURE FIGURE 2. MAXIMUM CONTINUOUS DRAIN CURRENT vs
CASE TEMPERATURE
FIGURE 3. FORWARD BIAS SAFE OPERATING AREA FIGURE 4. SATURATION CHARACTERISTICS
FIGURE 5. TRANSFER CHARACTERISTICS FIGURE 6. DRAIN TO SOURCE ON RESISTANCE vs DRAIN
CURRENT
0 50 100 150
0
TC, CASE TEMPERATURE (oC)
POWER DISSIPATION MULTIPLIER
0.2
0.4
0.6
0.8
1.0
1.2
025 50 75 100 125 150
TC, CASE TEMPERATURE (oC)
ID, DRAIN CURRENT (A)
5
3
2
1
4
RFM4N35, RFM4N40
RFP4N35, RFP4N40
RFM4N35, RFP4N35
RFM4N40, RFP4N40
10
1
0.11 10 100 1000
OPERATION IN THIS
AREA MAY BE
LIMITED BY rDS(ON)
TC = 25OC
VDS, DRAIN TO SOURCE VOLTAGE
ID, DRAIN CURRENT (A)
TJ = MAX RATED
RFM4N35, 40
RFP4N35, 40
0 5 10 15 20 25
7
6
5
4
3
2
1
VDS, DRAIN TO SOURCE VOLTAGE (V)
ID, DRAIN CURRENT (A)
VGS = 20 V
VGS = 8 - 10V
VGS = 7V VGS = 6V
VGS = 4V
VGS = 5V
TC = 25oC
80µs PULSE TEST
DUTY CYCLE ≤ 2%
0246810
6
5
4
3
2
1
8
7
VGS, GATE TO SOURCE VOLTAGE (V)
ID, DRAIN CURRENT (A)
TC= -40oC
0
VDS = 20V
PULSE DURATION = 80µs
DUTY CYCLE ≤ 2%
TC= 125oC
4
3
2
1
02345678910
1
ID, DRAIN CURRENT (A)
rDS(ON), DRAIN TO SOURCE
TC= -40oC
ON RESISTANCE (Ω)
0
VGS = 10V
PULSE DURATION = 80µs
TC = 25oC
TC = 125oCDUTY CYCLE ≤ 2%
RFM4N35, RFM4N40, RFP4N35, RFP4N40
4
FIGURE 7. NORMALIZED DRAIN TO SOURCE ON
RESISTANCE vs JUNCTION TEMPERATURE FIGURE 8. NORMALIZED GATE THRESHOLD VOLTAGE vs
JUNCTION TEMPERATURE
FIGURE 9. CAPACITANCE vs DRAIN TO SOURCE VOLTAGE
NOTE: Refer to Harris Application Notes AN7254 and AN7260.
FIGURE 10. NORMALIZED SWITCHING WAVEFORMS FOR
CONSTANT GATE CURRENT
Typical Performance Curves
(Continued)
-50 0 50 100 150 200
2
1.5
1
0.5
TJ, JUNCTION TEMPERATURE (oC)
NORMALIZED DRAIN TO SOURCE
ON RESISTANCE
0
ID= 4A
VGS = 10V
1.5
1
0.5
TJ, JUNCTION TEMPERATURE (0C)
NORMALIZED GATE
THRESHOLD VOLTAGE
-50 0 50 125 150 175
0
VDS = 10V
ID = 250µA
01020304050
700
600
500
400
300
200
100
800
VDS, DRAIN TO SOURCE (V)
C, CAPACITANCE (pF)
COSS
CRSS
CISS
0
VGS = 0V, f = 1MHz
CISS = CGS + CGD
CRSS = CGD
COSS ≈ CDS + CGS
500
375
250
125
0
10
8
6
4
2
0
VDS, DRAIN TO SOURCE VOLTAGE (V)
IG(REF)
IG(ACT)
20 IG(REF)
IG(ACT)
80
VGS, GATE TO SOURCE VOLTAGE (V)
VDD = BVDSS VDD = BVDSS
DRAIN SOURCE VOLTAGE
0.75 BVDSS
0.50 BVDSS
0.25 BVDSS
GATE
SOURCE
VOLTAGE
RL=100Ω
IG(REF) = 0.45mA
VGS = 10V
TO
t, TIME (µs)
Test Circuits and Waveforms
FIGURE 11. SWITCHING TIME TEST CIRCUIT FIGURE 12. RESISTIVE SWITCHING WAVEFORMS
VGS
RL
RG
DUT
+
-VDD
tON
td(ON)
tr
90%
10%
VDS 90%
10%
tf
td(OFF)
tOFF
90%
50%
50%
10% PULSE WIDTH
VGS
0
0
RFM4N35, RFM4N40, RFP4N35, RFP4N40
