© Semiconductor Components Industries, LLC, 2002
October, 2017 − Rev. 4 1Publication Order Number:
1N914/D
1N91x, 1N4x48, FDLL914,
FDLL4x48
Small Signal Diode
ORDERING INFORMATION
Part Number Marking Package Packing Method
1N914 914 DO−204AH (DO−35) Bulk
1N914−T50A 914 DO−204AH (DO−35) Ammo
1N914TR 914 DO−204AH (DO−35) Tape and Reel
1N914ATR 914A DO−204AH (DO−35) Tape and Reel
1N914B 914B DO−204AH (DO−35) Bulk
1N914BTR 914B DO−204AH (DO−35) Tape and Reel
1N916 916 DO−204AH (DO−35) Bulk
1N916A 916A DO−204AH (DO−35) Bulk
1N916B 916B DO−204AH (DO−35) Bulk
1N4148 4148 DO−204AH (DO−35) Bulk
1N4148TA 4148 DO−204AH (DO−35) Ammo
1N4148−T26A 4148 DO−204AH (DO−35) Ammo
1N4148−T50A 4148 DO−204AH (DO−35) Ammo
1N4148TR 4148 DO−204AH (DO−35) Tape and Reel
1N4148−T50R 4148 DO−204AH (DO−35) Tape and Reel
1N4448 4448 DO−204AH (DO−35) Bulk
1N4448TR 4448 DO−204AH (DO−35) Tape and Reel
FDLL914 Black SOD−80 Tape and Reel
FDLL914A Black SOD−80 Tape and Reel
FDLL914B Black SOD−80 Tape and Reel
FDLL4148 Black SOD−80 Tape and Reel
FDLL4148−D87Z Black SOD−80 Tape and Reel
FDLL4448 Black SOD−80 Tape and Reel
FDLL4448−D87Z Black SOD−80 Tape and Reel
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SOD−80 COLOR BAND MARKING
DEVICE 1ST BAND
FDLL914 BLACK
FDLL914A BLACK
FDLL914B BLACK
FDLL4148 BLACK
FDLL4448 BLACK
-1st band denotes cathode terminal
and has wider width
LL−34
THE PLACEMENT OF THE EXPANSION GAP
HAS NO RELATIONSHIP TO THE LOCATION
OF THE CATHODE TERMINAL
SOD80
Cathode Band
DO−35
Cathode is denoted with a black band
1N91x, 1N4x48, FDLL914, FDLL4x48
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2
ABSOLUTE MAXIMUM RATINGS (Values are at TA = 25°C unless otherwise noted) (Note 1)
Rating Symbol Value Unit
Maximum Repetitive Reverse Voltage VRRM 100 V
Average Rectified Forward Current IO200 mA
DC Forward Current IF300 mA
Recurrent Peak Forward Current If400 mA
Non−repetitive Peak Forward Surge Current Pulse Width = 1.0 s IFSM 1.0 A
Pulse Width = 1.0 ms4.0 A
Storage Temperature Range TSTG −65 to +200 °C
Operating Junction Temperature Range TJ−55 to +175 °C
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be af fected.
1. These ratings are limiting values above which the serviceability of the diode may be impaired.
THERMAL CHARACTERISTICS
Parameter Symbol Max Unit
Power Dissipation PD500 mW
Thermal Resistance, Junction−to−Ambient RqJA 300 °C
ELECTRICAL CHARACTERISTICS (Values are at TA = 25°C unless otherwise noted) (Note 2)
Symbol Parameter Conditions Min Max Unit
VRBreakdown Voltage IR = 100 mA100 V
IR = 5.0 mA75 V
VFForward Voltage 914B / 4448 IF = 5.0 mA 0.62 0.72 V
916B IF = 5.0 mA 0.63 0.73 V
914 / 916 / 4148 IF = 10 mA 1.0 V
914A / 916A IF = 20 mA 1.0 V
916B IF = 20 mA 1.0 V
914B / 4448 IF = 100 mA 1.0 V
IRReverse Leakage VR = 20 V 0.025 mA
VR = 20 V, TA = 150°C 50 mA
VR = 75 V 5.0 mA
CTTotal Capacitance 916/916A/916B/4448 VR = 0, f = 1.0 MHz 2.0 pF
914/914A/914B/4148 VR = 0, f = 1.0 MHz 4.0 pF
trr Reverse Recovery Time IF = 10 mA, VR = 6.0 V (600 mA)
Irr = 1.0 mA, RL = 100 W4.0 ns
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
2. Non−recurrent square wave PW = 8.3 ms.
1N91x, 1N4x48, FDLL914, FDLL4x48
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3
TYPICAL PERFORMANCE CHARACTERISTICS
110
120
130
140
150
160 Ta=25 oC
1
Reverse Voltage, V
R [V]
Reverse Current, IR [uA]
Figure 1. Reverse Voltage vs. Reverse Current
BV − 1.0 to 100 mA
0
20
40
60
80
100
120
10 20 30 50 70 100
Ta= 25 oC
Reverse Current, I
R [nA]
Reverse Voltage, V R [V]
GENERAL RULE: The Reverse Current of a diode will approximately
double for every ten (10) Degree C increase in Temperature
Figure 2. Reverse Current vs. Reverse Voltage
IR − 10 to 100 V
250
300
350
400
450
500
550 Ta= 25 oC
Forward Voltage, V
R [mV]
Forward Current, IF [uA]
Figure 3. Forward Voltage vs. Forward Current
VF − 1 to 100 mA
450
500
550
600
650
700
750
0.1
Ta= 25oC
Forward Voltage, V
F [mV]
Forward Current, IF [mA]
Figure 4. Forward Voltage vs. Forward Current
VF − 0.1 to 10 mA
0.6
0.8
1.0
1.2
1.4
1.6
10
Ta= 25 oC
Forward Voltage, V
F [mV]
Forward Current, IF [mA]
Figure 5. Forward Voltage vs. Forward Current
VF − 10 to 800 mA
0.01 0.1 1 10
300
400
500
600
700
800
900
3
0.3
0.03
Typical
Ta= −40 oC
Ta= 25oC
Ta= +65oC
Forward Voltage, V
F [mV]
Forward Current, IF [mA]
Figure 6. Forward Voltage vs. Ambient Temperature
VF - 0.01 - 20 mA (- 40 to +65°C)
2 3 5 10 20 30 50 100
1 2 3 5 10 20 30 50 100 0.2 0.3 0.5 1 2 3 5 10
20 30 50 100 200 300 500 800
1N91x, 1N4x48, FDLL914, FDLL4x48
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4
TYPICAL PERFORMANCE CHARACTERISTICS
0
0.75
0.80
0.85
0.90
TA = 25 oC
Total Capacitance (pF)
REVERSE VOLTAGE (V)
Figure 7. Total Capacitance
10 20 30 40 50 60
1.0
1.5
2.0
2.5
3.0
3.5
4.0
Ta = 25 oC
Reverse Recovery Time, t
rr [ns]
Reverse Recovery Current, Irr [mA]
IF = 10mA , IRR = 1.0 mA , Rloop = 100 Ohms
Figure 8. Reverse Recovery Time vs.
Reverse Recovery Current
0 50 100 150
0
100
200
300
400
500
IF(AV) − Average Rectified Current − mA
Current (mA)
Ambient Temperature (oC)
Figure 9. Average Rectified Current (IF(AV))
vs. Ambient Temperature (TA)Figure 10. Power Derating Curve
0 50 100 200
0
100
200
300
400
500
Power Dissipation, P
Temperature ( oC)
150
[mW]
D
DO−35 and LL−34 / SOD−80
2 4 6 8 10 12 14
AXIAL LEAD
CASE 017AG
ISSUE O
DATE 31 AUG 2016
0.533
0.460
4.56
3.05
T50 = 25.40 MIN (2X)
T26 = 14.00 MIN (2X)
1.91
1.53
NOTES: UNLESS OTHERWISE SPECIFIED
A) PACKAGE STANDARD REFERENCE:
JEDEC DO−204, VARIATION AH.
B) HERMETICALLY SEALED GLASS PACKAGE.
C) PACKAGE WEIGHT IS 0.137 GRAM.
D) ALL DIMENSIONS ARE IN MILLIMETERS.
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding
the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically
disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the
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98AON13443G
DOCUMENT NUMBER:
DESCRIPTION:
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Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
PAGE 1 OF 1
AXIAL LEAD
© Semiconductor Components Industries, LLC, 2019 www.onsemi.com
MiniMELF / SOD−80
CASE 100AD
ISSUE O
DATE 30 APR 2012
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding
the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically
disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the
rights of others.
98AON79582E
DOCUMENT NUMBER:
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Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
PAGE 1 OF 1
MINIMELF / SOD−80
© Semiconductor Components Industries, LLC, 2019 www.onsemi.com
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