IXGH100N30B3 - Zilog - Pdf.Support

Symbol Test Conditions Characteristic Values

(TJ = 25°C, unless otherwise specified) Min. Typ. Max.

BVCES IC= 250μA, VGE = 0V 300 V

VGE(th) IC= 250μA, VCE = VGE 3.0 5.0 V

ICES VCE = VCES 10 μA

VGE = 0V TJ = 125°C 500 μA

IGES VCE = 0V, VGE = ±20V ±100 nA

VCE(sat) IC = 100A, VGE = 15V, Note 1 1.35 1.7 V

TJ = 125°C 1.40 V

DS100007(07/08)

IXGH100N30B3

Preliminary Technical Information

VCES = 300V

IC110 = 100A

VCE(sat) ≤≤

≤≤

≤ 1.7V

tfi(typ) = 33ns

GenX3TM 300V IGBT

Medium speed low Vsat PT

IGBTs for 10-50 kHz switching

Symbol Test Conditions Maximum Ratings

VCES TJ= 25°C to 150°C 300 V

VCGR TJ= 25°C to 150°C, RGE = 1MΩ300 V

VGES Continuous ±20 V

VGEM Transient ±30 V

IC25 TC= 25°C (limited by leads) 75 A

IC110 TC= 110°C 100 A

ICM TC= 25°C, 1ms 400 A

SSOA VGE= 15V, TJ = 125°C, RG = 2Ω ICM = 200 A

(RBSOA) Clamped inductive load @VCE≤ ≤

≤ ≤

≤ 300V

PCTC= 25°C 460 W

TJ-55 ... +150 °C

TJM 150 °C

Tstg -55 ... +150 °C

MdMounting torque 1.13 / 10 Nm/lb.in.

TL Maximum lead temperature for soldering 300 °C

TSOLD 1.6mm (0.062 in.) from case for 10s 260 °C

Weight 6 g

G = Gate C = Collector

E = Emitter TAB = Collector

TO-247 (IXGH)

GCE

TAB

Features

zOptimized for low switching losses

zSquare RBSOA

zInternational standard package

Advantages

zHigh power density

zLow gate drive requirement

Applications

zHigh Frequency Power Inverters

zUPS

zMotor Drives

zSMPS

zPFC Circuits

zBattery Chargers

zWelding Machines

zLamp Ballasts

IXYS reserves the right to change limits, test conditions, and dimensions.

IXGH100N30B3

Symbol Test Conditions Characteristic Values

(TJ = 25°C, unless otherwise specified) Min. Typ. Max.

gfs IC = 50A, VCE = 10V, Note 1 45 77 S

Cies 5010 pF

Coes VCE = 25V, VGE = 0V, f = 1MHz 370 pF

Cres 93 pF

Qg 166 nC

Qge IC = 100A, VGE = 15V, VCE = 0.5 • VCES 30 nC

Qgc 65 nC

td(on) 27 ns

tr 51 ns

td(off) 110 ns

tf 33 ns

td(on) 24 ns

tr 61 ns

td(off) 124 ns

tf 148 ns

RthJC 0.27 °C/W

RthCK 0.21 °C/W

Resistive load, TJ = 125°°

°°

°C

IC = 50A, VGE = 15V

VCE = 240V, RG = 2Ω

Resistive load, TJ = 25°°

°°

°C

IC = 50A, VGE = 15V

VCE = 240V, RG = 2Ω

Notes: 1. Pulse test, t ≤ 300μs; duty cycle, d ≤ 2%.

IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2 7,157,338B2

by one or more of the following U.S. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2

4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2 7,071,537

PRELIMINARY TECHNICAL INFORMATION

The product presented herein is under development. The Technical Specifications offered are derived

from data gathered during objective characterizations of preliminary engineering lots; but also may yet

contain some information supplied during a pre-production design evaluation. IXYS reserves the right

to change limits, test conditions, and dimensions without notice.

Dim. Millimeter Inches

Min. Max. Min. Max.

A 4.7 5.3 .185 .209

A12.2 2.54 .087 .102

A22.2 2.6 .059 .098

b 1.0 1.4 .040 .055

b11.65 2.13 .065 .084

b22.87 3.12 .113 .123

C .4 .8 .016 .031

D 20.80 21.46 .819 .845

E 15.75 16.26 .610 .640

e 5.20 5.72 0.205 0.225

L 19.81 20.32 .780 .800

L1 4.50 .177

∅P 3.55 3.65 .140 .144

Q 5.89 6.40 0.232 0.252

R 4.32 5.49 .170 .216

S 6.15 BSC 242 BSC

e

∅ P

TO-247 (IXGH) Outline

1 2 3

Terminals: 1 - Gate 2 - Drain

3 - Source Tab - Drain

IXGH100N30B3

Fi g . 1. Ou tp u t C h ar acter i sti cs

@ 25ºC

0

20

40

60

80

100

120

140

160

180

200

0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2

V

CE

- Volts

I

C

- Amperes

V

GE

= 15V

13V

11V

9V

7V

Fig. 2. Extended Output Characteristics

@ 25ºC

0

50

100

150

200

250

300

350

0123456

V

CE

- Volts

I

C

- Amperes

V

GE

= 15V

13V

11V

7V

9V

Fi g . 3. Ou tp ut C h ar ac ter i stics

@ 125ºC

0

20

40

60

80

100

120

140

160

180

200

0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2

V

CE

- Volts

I

C

- Amperes

V

GE

= 15V

13V

11V

7V

9V

Fig. 4. Dependence of V

CE(sat)

on

Junction T emperature

0.7

0.8

0.9

1.0

1.1

1.2

1.3

1.4

1.5

1.6

-50 -25 0 25 50 75 100 125 150

T

J

- Degrees Centigrade

V

CE(sat)

- Normalized

V

GE

= 15V

I

C

= 200A

I

C

= 50A

I

C

= 100A

Fi g . 5. C ol l ect o r-to - Emi tter Vo l tag e

vs. Gate-to -Emi t ter Vo l tag e

1.0

1.5

2.0

2.5

3.0

3.5

4.0

4.5

5.0

6 7 8 9 10 11 12 13 14 15

V

GE

- Volts

V

CE

- Volts

I

C

= 200A

100A

50A

T

J

= 25ºC

Fi g . 6. I n p ut Admi ttance

0

20

40

60

80

100

120

140

160

180

200

220

4.0 4.5 5.0 5.5 6.0 6.5 7.0 7.5 8.0 8.5

V

GE

- Volts

I

C

- Amperes

T

J

= 125ºC

25ºC

- 40ºC

IXYS reserves the right to change limits, test conditions, and dimensions.

IXGH100N30B3

IXYS REF: G_200N30PB(75)7-05-08-D

Fig. 7. T ransconductance

0

10

20

30

40

50

60

70

80

90

100

110

120

130

0 20 40 60 80 100 120 140 160 180 200

I

C

- Amperes

g

f s

- Siemens

T

J

= - 40ºC

125ºC

25ºC

Fig. 8. Gate Charge

0

2

4

6

8

10

12

14

16

0 20 40 60 80 100 120 140 160 180

Q

G

- NanoCoulombs

V

GE

- Volts

V

CE

= 150V

I

C

= 100A

I

G

= 10mA

Fi g. 9. Rever se-B ias Safe Oper ati ng Area

0

20

40

60

80

100

120

140

160

180

200

220

50 100 150 200 250 300 350

V

CE

- Volts

I

C

- Amperes

T

J

= 125ºC

R

G

= 2



dV / dt < 10V / ns

Fig. 10. Capacitance

10

100

1,000

10,000

0 5 10 15 20 25 30 35 40

V

CE

- Volts

Capacitance - PicoFarads

f

= 1 MHz

Cies

Coes

Cres

Fi g. 12. Maxi mu m Tr ansi en t Thermal

Impedance

0.01

0.10

1.00

0.0001 0.001 0.01 0.1 1 10

Pulse Width - Seconds

Z

(th)JC

- ºC / W

Fig. 11. Forward-Bias Safe Operating Area

10

100

1000

1 10 100 1000

V

CE

- Volts

I

C

- Amperes

T

J

= 150ºC

T

C

= 25ºC

Single Pulse

V

CE

(sat)

Limit

1µs

10µs

100µs

1ms

IXGH100N30B3

Fi g . 18. R e si sti ve Tu r n -o ff Swi tch in g Times

vs. G ate R esi stance

145

150

155

160

165

170

175

180

185

190

2345678910

R

G

- Ohms

t

f

- Nanoseconds

100

120

140

160

180

200

220

240

260

280

t

d(off)

- Nanoseconds

t

f

t

d(off)

- - - -

T

J

= 125ºC, V

GE

= 15V

V

CE

= 240V

I

C

= 50A

I

C

= 100A

Fig. 14. Resistive Turn-on Rise Time

vs. Collector Current

50

55

60

65

70

75

80

85

90

95

50 55 60 65 70 75 80 85 90 95 100

I

C

- Amperes

t

r

- Nanoseconds

R

G

= 2

V

GE

= 15V

V

CE

= 240V T

J

= 125ºC

T

J

= 25ºC

Fi g. 15. R esi stive Tu r n -on Swi tchi n g Ti mes

vs. Gate R esi st an ce

50

60

70

80

90

100

110

120

130

140

2345678910

R

G

- Ohms

t

r

- Nanoseconds

23

24

25

26

27

28

29

30

31

32

t

d(on)

- Nanoseconds

t

r

t

d(on)

- - - -

T

J

= 125ºC, V

GE

= 15V

V

CE

= 240V I

C

= 100A

I

C

= 50A

Fi g . 16. R e si sti ve Tu r n -o ff Swi tch in g Times

vs. Ju ncti o n Temp er atu r e

20

40

60

80

100

120

140

160

25 35 45 55 65 75 85 95 105 115 125

T

J

- Degrees Centigrade

t

f

- Nanoseconds

106

109

112

115

118

121

124

127

t

d(off)

- Nanoseconds

t

f

t

d(off)

- - - -

R

G

= 2, V

GE

= 15V

V

CE

= 240V

I

C

= 50A

I

C

= 100A

I

C

= 100A

Fi g . 17. R e si sti ve Tu r n -o ff Swi tch in g Times

vs. Collector Current

20

40

60

80

100

120

140

160

180

50 55 60 65 70 75 80 85 90 95 100

I

C

- Amperes

t

f

- Nanoseconds

104

107

110

113

116

119

122

125

128

t

d(off)

- Nanoseconds

t

f

t

d(off)

- - - -

R

G

= 2, V

GE

= 15V

V

CE

= 240V

T

J

= 125ºC

T

J

= 25ºC

Fi g. 13. R esisti ve Tu r n-o n R ise Time

vs. Junction T emp erature

40

50

60

70

80

90

100

25 35 45 55 65 75 85 95 105 115 125

T

J

- Degrees Centigrade

t

r

- Nanoseconds

R

G

= 2

V

GE

= 15V

V

CE

= 240V

I

C

= 100A

I

C

= 50A

IXYS REF: G_200N30PB(75)7-05-08-D