LITE-ON SEMICONDUCTOR T4M3F-B SERIES TRIACS 4 AMPERES RMS 600 thru 800 VOLTS Sensitive Gate Triacs Sillicon Bidirectional Thyristors TO-220AB FEATURES Passivated Die for Reliability and Uniformity Four-Quadrant Triggering Blocking Voltage to 600 V On-State Current Rating of 4.0 Amperes RMS at 93 C Low Level Triggering and Holding Characteristics Pb-Free Package B L M C D A K E PIN 1 2 3 F G I J N TO-220AB MAX. MIN. DIM. 14.22 15.88 A 10.67 9.65 B 3.43 C 2.54 D 5.84 6.86 9.28 E 8.26 6.35 F 14.73 12.70 G H 2.29 2.79 0.51 1.14 I J 0.30 0.64 K 3.53 4.09 3.56 4.83 L M 1.14 1.40 2.92 2.03 N All Dimensions in millimeter PIN ASSIGNMENT 1 Main Terminal 1 2 Main Terminal 2 3 Gate 4 Main Terminal 2 MAXIMUM RATINGS (Tj= 25 unless otherwise noticed) Rating Symbol Value Unit 600 800 Volts IT(RMS) 4 Amp ITSM 40 Amps I2 t 6.6 A2 s PGM 0.5 Watt PG(AV) 0.1 Watt Peak Gate Current (Pulse Width 10usec,TC =93 ) IGM 0.2 Amp Peak Gate Voltage (Pulse Width 10usec,TC =93 ) VGM 5.0 Volts TJ -40 to +125 Tstg -40 to +150 Peak Repetitive Off- State Voltage (TJ= -40 to 110 , Sine Wave, 50 to 60 Hz; Gate Open) T4M3F600B T4M3F800B On-State RMS Current (Full cycles sine wave, 60Hz,Tc = 93 ) Peak Non-Repetitive Surge Current (One full cycle 60Hz, Tj=25 ) Circuit Fusing Consideration (t = 8.3ms) Peak Gate Power (Pulse Width<=10usec,TC =93 ) Average Gate Power (t=8.3 msec, TC = 93 ) Operating Junction Temperature Range Storage Temperature Range Notice: (1) VDRM and VRRM for all types can be applied on a continuous basis. Blocking voltages shall not be tested with a constant current source such that the voltage ratings of the devices are exceeded. VDRM, VRRM REV. 2, Jun-2005, KTXC02 RATING AND CHARACTERISTIC CURVES T4M3F-B SERIES THERMAL CHARACTERISTICS Characteristic Thermal Resistance - Junction to Case - Junction to Ambient Maximum Lead Temperature for Soldering Purposes (1/8" from Case for 10 Seconds) Symbol Value Unit RthJC RthJA 2.2 62.5 /W TL 260 ELECTRICAL CHARACTERISTICS (TJ=25 unless otherwise noted) Characteristics Symbol Min Typ Max Unit IDRM IRRM ------- ------- 10 2.0 uA mA Peak Forward On-State Voltage (ITM= 6.0A Peak @Tp 2.0 ms, Duty Cycle 2%) VTM ---- 1.3 1.6 Volts Gate Trigger Current (Continuous dc) (VD = 12 V, RL = 100 Ohms) IGT1 IGT2 IGT3 IGT4 1.8 2.1 2.4 4.2 3.0 3.0 3.0 5.0 mA Gate Trigger Voltage (Continuous dc) (VD = 12 V, RL =100 Ohms) VGT1 VGT2 VGT3 VGT4 0.5 0.5 0.5 0.5 0.62 0.57 0.65 0.74 1.3 1.3 1.3 1.3 Volts IH ---- 1.5 15 mA VGD 0.1 0.4 ---- Volts 1.75 5.2 2.1 2.2 10 10 10 10 mA OFF CHARACTERISTICS Peak Reptitive Forward or Reverse Blocking Current (VD=Rated VDRM and VRRM, Gate Open) TJ=25 TJ=125 ON CHARACTERISTICS Holding Current (VD = 12V, Initiating Current = 200 mA, Gate Open) Gate Non - Trigger Voltage (Continuous dc) (VD = VDRM, RL =100 Ohms, TJ=110 Latching Current (VD = 12V, IG = 5.0 mA) IL1 IL2 IL3 IL4 ------------- ------------- DYNAMIC CHARACTERISTICS Rate of Change of Commutating Current (VD = 200 V, ITM = 1.8 A, Commutating dv/dt = 1.0 V/usec, TJ = 110, f = 250 Hz, CL= 5.0 ufd, LL=80 mH, RS= 56 Ohms, CS= 0.03 ufd) with snubber Critical Rate of Rise of Off-State Voltage (VD = 0.67 X Rated VDRM , Exponential Waveform, Gate Open, TJ = 110) di/dt (c) ---- 3.0 ---- A/ms dv/dt 10 ---- ---- V/us RATING AND CHARACTERISTIC CURVES T4M3F-B SERIES Quadrant Definitions All polarities are referenced to MT1 Whith in -phase signal (using standard AC lines) quadrants I and III are used RATING AND CHARACTERISTIC CURVES T4M3F-B SERIES RATING AND CHARACTERISTIC CURVES T4M3F-B SERIES Specifications mentioned in this publication are subject to change without notice.