BL Galaxy Electrical Production specification
NPN Silicon Epitaxial Planar Transistor 2SC1623W
Document number: BL/SSSTF035 www.galaxycn.com
Rev.A 2
ELECTRICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified
Parameter Symbol Test conditions MIN TYP MAX UNIT
Collector-base breakdown voltage V(BR)CBO IC=100μA,IE=0 60 V
Collector-emitter breakdown
voltage V(BR)CEO I
C=1mA,IB=0 50 V
Emitter-base breakdown voltage V(BR)EBO I
E=100μA,IC=0 6 V
Collector cut-off current ICBO VCB=60V,IE=0 0.1 μA
Emitter cut-off current IEBO VEB=5V,IC=0 0.1 μA
DC current gain hFE VCE=6V,IC=2mA 90 200 600
Collector-emitter saturation voltage VCE(sat) I
C=100mA, IB= 10mA 0.15 0.3 V
Base-emitter saturation voltage VBE(sat) I
C=100mA, IB= 10mA 0.86 1.0 V
Transition frequency fT VCE=6V, IE= -10mA 250 MHz
Output capacitance Cob
VCE=6V, IE= 0mA
f=1.0MHz 3.0 pF
CLASSIFICANTION OF hFE
Marking L4 L5 L6 L7
hFE 90-180 135-270 200-400 300-600
TYPICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified