PolarHTTM Power MOSFET IXTK 150N15P IXTQ 150N15P VDSS = 150 V ID25 = 150 A RDS(on) 13 m N-Channel Enhancement Mode Avalanche Rated TO-264 (IXTK) Symbol Test Conditions Maximum Ratings VDSS TJ = 25 C to 175 C 150 V VDGR TJ = 25 C to 175 C; RGS = 1 M 150 V VGS Continuous 20 V VGSM Transient 30 V ID25 TC = 25 C 150 A ID(RMS) External lead current limit 75 A IDM TC = 25 C, pulse width limited by TJM 340 A IAR TC = 25 C 60 A EAR TC = 25 C 80 mJ EAS TC = 25 C 2.5 J dv/dt IS IDM, di/dt 100 A/s, VDD VDSS, TJ 175 C, RG = 4 10 V/ns PD TC = 25 C 714 W -55 ... +175 C TJM 175 C Tstg -55 ... +175 C 300 260 C C TJ TL TSOLD 1.6 mm (0.062 in.) from case for 10 s Plastic body for 10 s Md Mounting torque 1.13/10 Nm/lb.in. Weight TO-3P TO-264 Symbol Test Conditions (TJ = 25 C, unless otherwise specified) 5.5 g 10 g Characteristic Values Min. Typ. Max. BVDSS VGS = 0 V, ID = 250 A 150 VGS(th) VDS = VGS, ID = 250A 3.0 IGSS VGS = 20 VDC, VDS = 0 IDSS VDS = VDSS VGS = 0 V RDS(on) VGS = 10 V, ID = 0.5 ID25 Pulse test, t 300 s, duty cycle d 2 % TJ = 175 C V 5.0 V 100 nA 25 500 A A 13 m G D D (TAB) S TO-3P (IXTQ) G D S G = Gate S = Source (TAB) D = Drain TAB = Drain Features l l l International standard packages Unclamped Inductive Switching (UIS) rated Low package inductance - easy to drive and to protect Advantages l l l Easy to mount Space savings High power density DS99299E(03/06) (c) 2006 IXYS All rights reserved http://store.iiic.cc/ IXTK 150N15P IXTQ 150N15P Symbol Test Conditions Characteristic Values (TJ = 25 C, unless otherwise specified) Min. Typ. Max. gfs VDS= 10 V; ID = 0.5 ID25, pulse test 55 Ciss Coss VGS = 0 V, VDS = 25 V, f = 1 MHz 80 S 5800 pF 1730 pF 400 pF 30 ns 33 ns 100 ns 28 ns 190 nC 40 nC 105 nC Crss td(on) tr VGS = 10 V, VDS = 0.5 VDSS, ID = ID25 td(off) RG = 3.3 (External) tf Qg(on) Qgs VGS= 10 V, VDS = 0.5 VDSS, ID = 0.5 ID25 Qgd 0.21 C/W RthJC RthCK TO-3P 0.21 C/W RthCS TO-264 0.15 C/W Source-Drain Diode Characteristic Values (TJ = 25 C, unless otherwise specified) Min. Typ. Max. Symbol Test Conditions IS VGS = 0 V 150 A ISM Repetitive 340 A VSD IF = IS, VGS = 0 V, Pulse test, t 300 s, duty cycle d 2 % 1.5 V trr IF = 25 A -di/dt = 100 A/s VR = 100 V, VGS = 0 V QRM TO-264 (IXTK) Outline 150 ns 2.3 C TO-3P (IXTQ) Outline IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered by 4,835,592 one or moreof the following U.S. patents: 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123 B1 6,306,728 B1 http://store.iiic.cc/ 6,404,065 B1 6,534,343 6,583,505 6,683,344 6,727,585 6,710,405B2 6,759,692 6,710,463 6,771,478 B2 IXTK 150N15P IXTQ 150N15P Fig. 1. Output Characteristics @ 25C Fig. 2. Extended Output Characteristics @ 25C 330 150 VGS = 10V 9V 8V 120 270 9V 240 I D - Amperes 7V I D - Amperes VGS = 10V 300 90 6V 60 210 180 8V 150 120 7V 90 30 60 5V 6V 30 0 0 0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 0 2 1 2 3 Fig. 3. Output Characteristics @ 150C 150 2.6 7 8 9 10 VGS = 10V 2.4 90 R D S ( o n ) - Normalized I D - Amperes 6 2.8 7V 60 6V 30 2.2 2 I D = 150A 1.8 1.6 I D = 75A 1.4 1.2 1 0.8 5V 0 0.6 0 1 2 3 4 V D S - Volts -50 5 -25 0 25 50 75 100 125 150 175 TJ - Degrees Centigrade Fig. 5. RDS(on) Norm alized to 0.5 ID25 Value vs. Drain Current Fig. 6. Drain Current vs. Case Tem perature 3.4 90 TJ = 175C 3.1 2.8 70 2.5 60 2.2 VGS = 10V 1.9 External Lead Current Limit 80 I D - Amperes R D S ( o n ) - Normalized 5 Fig. 4. RDS(on) Norm alized to 0.5 ID25 Value vs. Junction Tem perature VGS = 10V 9V 8V 120 4 V D S - Volts V D S - Volts VGS = 15V 1.6 50 40 30 20 1.3 1 10 TJ = 25C 0.7 0 50 100 150 200 I D - Amperes 250 300 0 350 (c) 2006 IXYS All rights reserved http://store.iiic.cc/ -50 -25 0 25 50 75 100 125 TC - Degrees Centigrade 150 175 IXTK 150N15P IXTQ 150N15P Fig. 8. Transconductance Fig. 7. Input Adm ittance 250 110 225 100 200 90 80 g f s - Siemens I D - Amperes 175 150 125 100 75 TJ = 150C 50 25C 70 50 25C 40 150C 30 20 -40C 25 TJ = -40C 60 10 0 0 4 4.5 5 5.5 6 6.5 7 7.5 8 8.5 0 25 50 75 V G S - Volts Fig. 9. Source Current vs. Source-To-Drain Voltage Fig. 10. Gate Charge 10 350 9 300 VDS = 75V I D = 75A 8 I G = 10mA 7 VG S - Volts I S - Amperes 250 200 150 6 5 4 3 100 TJ = 150C 2 50 TJ = 25C 1 0 0 0.4 0.6 0.8 1 V S D - Volts 1.2 1.4 0 1.6 20 40 60 80 100 120 140 160 180 200 Q G - nanoCoulombs Fig. 12. Forw ard-Bias Safe Operating Area Fig. 11. Capacitance 100,000 1000 f = 1MHz TJ = 175C R DS(on) Limit Ciss 10,000 I D - Amperes Capacitance - picoFarads 100 125 150 175 200 225 250 I D - Amperes Coss TC = 25C 25s 100s 100 1ms 1,000 10ms Crss DC 10 100 0 5 10 15 20 25 V DS - Volts 30 35 40 10 IXYS reserves the right to change limits, test conditions, and dimensions. http://store.iiic.cc/ 100 V D S - Volts 1000 IXTK 150N15P IXTQ 150N15P F ig . 1 3 . M a x im u m T r a n s ie n t T h e r m a l R e s is t a n c e R( t h ) J C - C / W 1.00 0.10 0.01 1 10 100 Pu ls e W id th - m illis e c o n d s (c) 2006 IXYS All rights reserved http://store.iiic.cc/ 1000