15 A, 600 V Hyperfast Rectifier RHRG1560CC-F085 www.onsemi.com Max Ratings (600 V, 15 A) The RHRG1560CC-F085 is an Hyperfast diode with soft recovery characteristics (trr < 55 ns). It has half the recovery time of ultrafast diode and is of silicon nitride passivated ion-implanted epitaxial planar construction. This device is intended for use as a freewheeling/clamping diode and rectifier in a variety of automotive switching power supplies and other power switching automotive applications. Its low stored charge and hyperfast soft recovery minimize ringing and electrical noise in many power switching circuits, thus reducing power loss in the switching transistors. TO-247-3LD CASE 340CK MARKING DIAGRAM Features * * * * * High Speed Switching (trr = 26 ns(Typ.) @ IF = 15 A) Low Forward Voltage (VF = 1.86 V(Typ.) @ IF = 15 A) Avalanche Energy Rated AEC-Q101 Qualified and PPAP Capable These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS Compliant Applications * Switching Power Supply * Power Switching Circuits * Automotive and General Purpose (c) Semiconductor Components Industries, LLC, 2014 December, 2019 - Rev. 4 $Y&Z&3&K RHRG1560C RHRG1560C $Y &Z &3 &K = Specific Device Code = ON Semiconductor Logo = Assembly Lot Code = Numeric Date Code = Assembly Location ORDERING INFORMATION See detailed ordering and shipping information on page 2 of this data sheet. 1 Publication Order Number: RHRG1560CC-F085/D RHRG1560CC-F085 PIN ASSIGNMENTS JEDEC STYLE T0-247 K ANODE 1 CATHODE ANODE 2 CATHODE (BOTTOM SIDE METAL) A1 A2 ABSOLUTE MAXIMUM RATINGS (TC = 25C Unless Otherwise Noted) Parameter Symbol Ratings Units VRRM Peak Repetitive Reverse Voltage 600 V VRWM Working Peak Reverse Voltage 600 V DC Blocking Voltage 600 V IF(AV) Average Rectified Forward Current @ TC = 25_C 15 A IFSM Non-repetitive Peak Surge Current (Halfwave 1 Phase 50 Hz) 45 A EAVL Avalanche Energy (1 A, 40 mH) 20 mJ - 55 to +175 C VR TJ, TSTG Operating Junction and Storage Temperature Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. THERMAL CHARACTERISTICS (TC = 25C Unless Otherwise Noted) Symbol Parameter Max Units RJC Maximum Thermal Resistance, Junction to Case 1.37 C/W RJA Maximum Thermal Resistance, Junction to Ambient 45 C/W PACKAGE MARKING AND ORDIRING INFORMATION Device Marking Device Package Tube Quantity RHRG1560C RHRG1560CC-F085 TO-247 - 30 ELECTRICAL CHARACTERISTICS (TC = 25C Unless Otherwise Noted) Symbol Parameter IR Instantaneous Reverse Current VFM (Note 1) Instantaneous Forward Voltage trr (Note 2) Reverse Recovery Time ta tb Qrr Reverse Recovery Time Conditions Min. Typ. Max Units TC = 25C - - 100 mA TC = 175C - - 1000 mA IF = 15 A TC = 25C TC = 175C - - 1.86 1.28 2.3 1.6 V V IF =1 A, di/dt = 100 A/ms, VCC= 390 V TC = 25C - 25 50 ns IF =15 A, di/dt = 100 A/ms, VCC= 390 V TC = 25C TC = 175C - - 26 137 55 - ns ns IF =15 A, di/dt = 100 A/ms, VCC= 390 V TC = 25C - - - 15 11 21 - - - ns ns nC VR = 600 V Reverse Recovery Charge Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 1. Pulse : Test Pulse width = 300 ms, Duty Cycle = 2%. 2. Guaranteed by design. www.onsemi.com 2 RHRG1560CC-F085 TEST CIRCUIT AND WAVEFORMS VGE AMPLITUDE AND RG CONTROL dIF/dt t1 AND t2 CONTROL IF L RG VGE DUT trr dt ta tb 0 + VDD - IGBT t1 dIF IF CURRENT SENSE 0.25 I RM I RM t2 Figure 1. trr Test Circuit Figure 2. trr Waveforms and Definitions I=1A L = 40 mH R < 0.1 W EAVL = 1/2LI2 [VR(AVL)/(VR(AVL) - VDD)] Q1 = IGBT (BVCES > DUT VR(AVL)) VAVL L R + VDD CURRENT SENSE IL IL I V Q1 V DD t0 - DUT Figure 3. Avalanche Energy Test Circuit t1 t2 t Figure 4. Avalanche Current and Voltage Waveforms www.onsemi.com 3 RHRG1560CC-F085 TYPICAL PERFORMANCE CHARACTERISTICS 100 1000 Reverse Current , IR [mA] Forward Current , IF [A] 100 TC = 1755C 10 1255C TTCC == 1255C 1 0.5 1.0 10 TC = 1255C 1 0.1 0.01 1E-3 255C TTCC==255C 0.1 0.1 TC = 1755C 1.5 2.0 1E-4 100 2.5 TC = 255C 200 Forward Voltage, VF [V] Figure 5. Typical Forward Voltage Drop vs. Forward Current 600 Reverse Recovery Time, trr [ns] IF = 15 A 100 50 0 0.1 1 10 100 TC = 1755C 50 TC = 1255C TC = 255C 0 100 100 200 300 Reverse Voltage, VR [V] Figure 8. Typical Reverse Recovery Time vs. di/dt Average Forward Current, IF(AV) [A] TC = 1755C 15 10 TC = 1255C 5 TC = 255C 200 500 90 IF = 15 A 0 100 400 di/dt [A/ms] Figure 7. Typical Junction Capacitance Reverse Recovery Current, Irr [A] 500 150 Typical Capacitance at 10 V = 51 pF 20 400 Figure 6. Typical Reverse Current vs. Reverse Voltage 150 Capacitances, CJ [pF] 300 Reverse Voltage, VR [V] 300 400 60 30 0 25 500 50 75 100 125 150 175 di/dt [A/ms] Case Temperature, TC [5C] Figure 9. Typical Reverse Recovery Current vs. di/dt Figure 10. Forward Current Derating Curve www.onsemi.com 4 RHRG1560CC-F085 Reverse Recovery Charge, Qrr [nC] 800 IF = 15 A TC = 1755C 600 400 TC = 1255C 200 TC = 255C 0 100 200 300 400 500 di/dt [A/ms] Figure 11. Reverse Recovery Charge 2 ZqJC(t), Thermal Response 1 D=0.5 0.2 PDM t1 0.1 0.1 t2 0.05 *Notes: 0.02 1. ZqJC(t) = 1.375C/W Typ. 2. Duty Factor, D = t1/t2 0.01 3. TJM - TC = PDM y ZqJC(t) single pulse 0.01 -5 10 10 -4 -3 10 -2 -1 10 10 0 10 t1, Square Wave Pulse Duration [sec] Figure 12. Transient Thermal Response Curve www.onsemi.com 5 10 1 2 10 MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS TO-247-3LD SHORT LEAD CASE 340CK ISSUE A A DATE 31 JAN 2019 A E P1 P A2 D2 Q E2 S B D 1 2 D1 E1 2 3 L1 A1 L b4 c (3X) b 0.25 M (2X) b2 B A M DIM (2X) e GENERIC MARKING DIAGRAM* AYWWZZ XXXXXXX XXXXXXX XXXX = Specific Device Code A = Assembly Location Y = Year WW = Work Week ZZ = Assembly Lot Code *This information is generic. Please refer to device data sheet for actual part marking. Pb-Free indicator, "G" or microdot "G", may or may not be present. Some products may not follow the Generic Marking. DOCUMENT NUMBER: DESCRIPTION: 98AON13851G TO-247-3LD SHORT LEAD A A1 A2 b b2 b4 c D D1 D2 E E1 E2 e L L1 P P1 Q S MILLIMETERS MIN NOM MAX 4.58 4.70 4.82 2.20 2.40 2.60 1.40 1.50 1.60 1.17 1.26 1.35 1.53 1.65 1.77 2.42 2.54 2.66 0.51 0.61 0.71 20.32 20.57 20.82 13.08 ~ ~ 0.51 0.93 1.35 15.37 15.62 15.87 12.81 ~ ~ 4.96 5.08 5.20 ~ 5.56 ~ 15.75 16.00 16.25 3.69 3.81 3.93 3.51 3.58 3.65 6.60 6.80 7.00 5.34 5.46 5.58 5.34 5.46 5.58 Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped "CONTROLLED COPY" in red. PAGE 1 OF 1 ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor reserves the right to make changes without further notice to any products herein. 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