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VMO 580-02F
HipPerFETTM Module VDSS = 200 V
ID25 = 580 A
RDS(on) = 3.8 mΩΩ
ΩΩ
Ω
MOSFET
Symbol Conditions Maximum Ratings
VDSS TVJ = 25°C to 150°C 200 V
VGS ±20 V
ID25 TC = 25°C 580 A
ID80 TC = 80°C 430 A
IF25 (diode) TC = 25°C 580 A
IF80 (diode) TC = 80°C 430 A
Symbol Conditions Characteristic Values
(TVJ = 25°C, unless otherwise specified)
min. typ. max.
RDSon VGS = 10 V; ID = ID80 3.2 3.8 mΩ
VGSth VDS = 20 V; ID = 50 mA 2 4 V
IDSS VDS = 0.8 • VDSS; VGS = 0 V; TVJ = 25°C 2.6 mA
TVJ = 125°C 3 mA
IGSS VGS = ±20 V; VDS = 0 V 1 µA
Qg2750 nC
Qgs 500 nC
Qgd 1350 nC
td(on) 210 ns
tr500 ns
td(off) 900 ns
tf350 ns
VF(diode) IF = 300 A; VGS = 0 V 0.9 1.1 V
trr (diode) IF = 300 A; -di/dt = 500 A/µs; VDS = ½ VDSS 300 ns
RthJC 0.05 K/W
RthJS with heat transfer paste 0.07 K/W
Features
• HiPerFETTM technology
- low RDSon
- dv/dt ruggedness
- fast intrinsic reverse diode
• package
- low inductive current path
- screw connection to high current
main terminals
- use of non interchangeable
connectors for auxiliary terminals
possible
- Kelvin source terminals for easy drive
- isolated ceramic base plate
Applications
• converters with high power density for
- main and auxiliary AC drives of
electric vehicles
- DC drives
- power supplies
VGS= 10 V; VDS = 0.5 • VDSS; ID = ID80
VGS= 10 V; VDS = 0.5 • VDSS;
ID = ID80; RG = 1 Ω
N-Channel Enhancement Mode
DSGKS
Preliminar y Data
D
S
G
KS