CPH6434
No. A0443-1/4
Features
•Ultrahigh-speed switching.
•1.8V drive.
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter Symbol Conditions Ratings Unit
Drain-to-Source Voltage VDSS 30 V
Gate-to-Source Voltage VGSS ±10 V
Drain Current (DC) ID6A
Drain Current (Pulse) IDP PW≤10µs, duty cycle≤1% 24 A
Allowable Power Dissipation PDMounted on a ceramic board (900mm2✕0.8mm) 1.6 W
Channel Temperature Tch 150 °C
Storage Temperature Tstg --55 to +150 °C
Electrical Characteristics at Ta=25°C
Ratings
Parameter Symbol Conditions min typ max Unit
Drain-to-Source Breakdown Voltage V(BR)DSS ID=1mA, VGS=0V 30 V
Zero-Gate Voltage Drain Current IDSS VDS=30V, VGS=0V 1 µA
Gate-to-Source Leakage Current IGSS VGS=±8V , VDS=0V ±10 µA
Cutoff Voltage VGS(off) VDS=10V, ID=1mA 0.4 1.3 V
Forward T ransfer Admittance yfsVDS=10V, ID=3A 4.4 7.4 S
RDS(on)1 ID=3A, VGS=4V 31 41 mΩ
Static Drain-to-Source On-State Resistance
RDS(on)2 ID=1.5A, VGS=2.5V 40 57 mΩ
RDS(on)3 ID=0.3A, VGS=1.8V 55 90 mΩ
Input Capacitance Ciss VDS=10V, f=1MHz 790 pF
Output Capacitance Coss VDS=10V, f=1MHz 125 pF
Reverse T ransfer Capacitance Crss VDS=10V, f=1MHz 110 pF
Turn-ON Delay Time td(on) See specified Test Circuit. 16.5 ns
Rise Time trSee specified Test Circuit. 78 ns
Turn-OFF Delay Time td(off) See specified Test Circuit. 77 ns
Fall T ime tfSee specified Test Circuit. 125 ns
Marking : ZL Continued on next page.
Ordering number : ENA0443
82306 / 62006PE MS IM TB-00002101
CPH6434 N-Channel Silicon MOSFET
General-Purpose Switching Device
Applications
SANYO Semiconductors
DATA SHEET
Any and all SANYO Semiconductor products described or contained herein do not have specifications
that can handle applications that require extremely high levels of reliability, such as life-support systems,
aircraft's control systems, or other applications whose failure can be reasonably expected to result in
serious physical and/or material damage. Consult with your SANYO Semiconductor representative
nearest you before usingany SANYO Semiconductor products described or contained herein in such
applications.
SANYO Semiconductor assumes no responsibility for equipment failures that result from using products
at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition
ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor
products described or contained herein.
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
CPH6434
No. A0443-2/4
Continued from preceding page. Ratings
Parameter Symbol Conditions min typ max Unit
Total Gate Charge Qg VDS=10V, VGS=4V, ID=6A 7.0 nC
Gate-to-Source Charge Qgs VDS=10V, VGS=4V, ID=6A 1.8 nC
Gate-to-Drain “Miller” Charge Qgd VDS=10V, VGS=4V, ID=6A 1.9 nC
Diode Forward Voltage VSD IS=6A, VGS=0V 0.86 1.2 V
Package Dimensions Switching Time Test Circuit
unit : mm
7018A-003
1 : Drain
2 : Drain
3 : Gate
4 : Source
5 : Drain
6 : Drain
SANYO : CPH6
321
645
2.9
0.05
0.4
2.8
1.6
0.2
0.6 0.6
0.9
0.2
0.15
0.95
PW=10µs
D.C.≤1%
P.G 50Ω
G
S
D
ID=3A
RL=5Ω
VDD=15V
VOUT
CPH6434
VIN
4V
0V
VIN
ID -- VDS ID -- VGS
RDS(on) -- Ta
Drain-to-Source Voltage, VDS -- V
Drain Current, ID -- A
Gate-to-Source Voltage, VGS -- V
Drain Current, ID -- A
Static Drain-to-Source
On-State Resistance, RDS(on) -- mΩ
Ambient Temperature, Ta -- °C
2
3
6
10
1
4
5
8
7
9
0
0
1
2
4
5
6
0.2
3
0
0.4 1.00.80.6
IT11180
0 0.5 1.0 1.5 2.0 2.5
IT11181
IT11183
Ta=75°C
--25°C
2.0V
1.8V
VGS=1.5V
VDS=10V
8.0V
--60
0
80
20
60
40
100
--40 --20 0 20 40 60 80 100 120 140 160
ID=1.5A, VGS=2.5V
I
D
=3.0A, V
GS
=4.0V
6.0V
25°C
2.5V
4.0V
I
D
=0.3A, V
GS
=1.8V
RDS(on) -- VGS
Static Drain-to-Source
On-State Resistance, RDS(on) -- mΩ
Gate-to-Source Voltage, VGS -- V
024610
IT11241
140
0
40
20
80
60
120
100
Ta=25°C
ID=0.3A
1.5A
3.0A
CPH6434
No. A0443-3/4
02463157
0
1.0
2.0
3.0
4.0
3.5
2.5
1.5
0.5
IT11188
10
7
5
3
2
5
3
2
100
IT11186
IT11184
0.1 1.0
23 57 10
23 57 010205152530
100
7
3
1000
7
5
3
2
2
5
IT11187
IT11185
0 0.2 0.4 0.6 0.8 1.0 1.2
0.01
0.1
7
5
3
2
2
1.0
7
5
3
2
VGS=0V
--25
°
C
25°C
Ta=75°C
td(on)
td(off)
tf
tr
VDD=15V
VGS=4V
Ciss
Coss
Crss
f=1MHz
VDS=10V
ID=6A
0.01
0.1 0.1
2735 210
2735
1.0
735
1.0
7
5
3
2
3
2
2
10
7
5
3
VDS=10V
75°C
Ta= --25°C
0.01 0.1 223 5 23 571.0 2357
0.01
2
0.1
1.0
10
3
2
5
3
5
7
2
3
5
7
2
3
5
7
IT11189
IDP=24A
ID=6A
≤10µs
100µs
DC operation (Ta=25°C)
1ms
100ms
10ms
Operation in this area
is limited by RDS(on).
0
0.2
1.2
1.6
1.4
1.0
0.8
0.6
0.4
1.8
0 20 40 60 80 100 120 140 160
IT11190
25°C
10
7
5
3
10
357
VGS -- Qg
SW Time -- IDCiss, Coss, Crss -- VDS
IS -- VSD
y
fs-- ID
A S O
PD -- Ta
Drain Current, ID -- A
Switching Time, SW Time -- ns Forward T ransfer Admittance,
y
fs -- S
Diode Forward Voltage, VSD -- V
Source Current, IS -- A
Drain-to-Source Voltage, VDS -- V
Ciss, Coss, Crss -- pF
Total Gate Charge, Qg -- nC
Gate-to-Source Voltage, VGS -- V
Ambient Temperature, Ta -- °C
Allowable Power Dissipation, PD -- W
Drain-to-Source Voltage, VDS -- V
Drain Current, ID -- A
Drain Current, ID -- A
Ta=25°C
Single pulse
Mounted on a ceramic board (900mm
2
✕0.8mm)
Mounted on a ceramic board (900mm
2
✕0.8mm)
CPH6434
No. A0443-4/4PS
Note on usage : Since the CPH6434 is a MOSFET product, please avoid using this device in the vicinity
of highly charged objects.
This catalog provides information as of June, 2006. Specifications and information herein are subject
to change without notice.
Specifications of any and all SANYO Semiconductor products described or contained herein stipulate
the performance, characteristics, and functions of the described products in the independent state,
and are not guarantees of the performance, characteristics, and functions of the described products
as mounted in the customer's products or equipment. To verify symptoms and states that cannot be
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