PD -95727A IRF8915PbF HEXFET(R) Power MOSFET Applications Dual SO-8 MOSFET for POL converters in desktop, servers, graphics cards, game consoles and set-top box l Lead-Free VDSS RDS(on) max 18.3m:@VGS = 10V 20V Benefits l Ultra-Low Gate Impedance l Very Low RDS(on) l Fully Characterized Avalanche Voltage and Current S1 1 8 D1 G1 2 7 D1 S2 3 6 D2 G2 4 5 D2 ID 8.9A SO-8 Top View Absolute Maximum Ratings Max. Units VDS Drain-to-Source Voltage Parameter 20 V VGS Gate-to-Source Voltage Continuous Drain Current, VGS @ 10V 20 7.1 IDM Continuous Drain Current, VGS @ 10V Pulsed Drain Current ID @ TA = 25C ID @ TA = 70C 8.9 c A 71 PD @TA = 25C Power Dissipation 2.0 PD @TA = 70C Power Dissipation 1.3 TJ Linear Derating Factor Operating Junction and TSTG Storage Temperature Range W W/C C 0.016 -55 to + 150 Thermal Resistance Parameter RJL RJA Junction-to-Drain Lead Junction-to-Ambient Notes through www.irf.com f Typ. Max. Units --- 42 C/W --- 62.5 are on page 10 1 07/23/08 IRF8915PbF Static @ TJ = 25C (unless otherwise specified) Parameter BVDSS VDSS/TJ Min. Typ. Max. Units 20 --- --- Breakdown Voltage Temp. Coefficient Static Drain-to-Source On-Resistance --- --- 0.015 14.6 --- 18.3 V/C Reference to 25C, ID = 1mA m VGS = 10V, ID = 8.9A Gate Threshold Voltage --- 1.7 21.6 --- 27 2.5 VGS = 4.5V, ID = 7.1A VDS = VGS, ID = 250A IDSS Gate Threshold Voltage Coefficient Drain-to-Source Leakage Current --- --- -4.8 --- --- 1.0 IGSS Gate-to-Source Forward Leakage --- --- --- --- 150 100 nA Gate-to-Source Reverse Leakage Forward Transconductance --- 12 --- --- -100 --- S Total Gate Charge Pre-Vth Gate-to-Source Charge --- --- 4.9 1.8 7.4 --- Post-Vth Gate-to-Source Charge Gate-to-Drain Charge --- --- 0.61 1.7 --- --- Qgodr Qsw Gate Charge Overdrive Switch Charge (Qgs2 + Qgd) --- --- 0.79 2.3 --- --- Qoss td(on) Output Charge Turn-On Delay Time --- --- 2.7 6.0 --- --- nC VDS = 10V, VGS = 0V VDD = 4.5V, VGS = 4.5V tr td(off) Rise Time Turn-Off Delay Time --- --- 12 7.1 --- --- ns ID = 7.1A Clamped Inductive Load tf Ciss Fall Time Input Capacitance --- --- 3.6 540 --- --- Coss Crss Output Capacitance Reverse Transfer Capacitance --- --- 180 91 --- --- RDS(on) VGS(th) VGS(th)/TJ gfs Qg Qgs1 Qgs2 Qgd V Conditions Drain-to-Source Breakdown Voltage V VGS = 0V, ID = 250A e e mV/C A VDS = 16V, VGS = 0V VDS = 16V, VGS = 0V, TJ = 125C VGS = 20V VGS = -20V VDS = 10V, ID = 7.1A VDS = 10V nC VGS = 4.5V ID = 7.1A See Fig. 6 VGS = 0V pF VDS = 10V = 1.0MHz Avalanche Characteristics EAS IAR Parameter Single Pulse Avalanche Energy Avalanche Current c Typ. --- --- d Max. 15 7.1 Units mJ A Diode Characteristics Parameter Min. Typ. Max. Units IS Continuous Source Current --- --- 2.5 ISM (Body Diode) Pulsed Source Current --- --- 71 VSD trr (Body Diode) Diode Forward Voltage Reverse Recovery Time --- --- --- 13 1.0 19 V ns Qrr Reverse Recovery Charge --- 3.5 5.2 nC 2 c Conditions MOSFET symbol A showing the integral reverse D G S p-n junction diode. TJ = 25C, IS = 7.1A, VGS = 0V TJ = 25C, IF = 7.1A, VDD = 10V di/dt = 100A/s e e www.irf.com IRF8915PbF 100 100 10 BOTTOM 1 TOP ID, Drain-to-Source Current (A) ID, Drain-to-Source Current (A) TOP VGS 10V 8.0V 5.5V 4.5V 3.5V 3.0V 2.8V 2.5V 0.1 2.5V 0.01 10 BOTTOM 1 2.5V 60s PULSE WIDTH 60s PULSE WIDTH Tj = 25C 0.001 1 10 100 0.1 V DS, Drain-to-Source Voltage (V) 1 10 100 V DS, Drain-to-Source Voltage (V) Fig 2. Typical Output Characteristics Fig 1. Typical Output Characteristics 100 1.5 RDS(on) , Drain-to-Source On Resistance (Normalized) ID, Drain-to-Source Current () Tj = 150C 0.1 0.1 VGS 10V 8.0V 5.5V 4.5V 3.5V 3.0V 2.8V 2.5V 10 T J = 150C T J = 25C 1 VDS = 10V 60s PULSE WIDTH 0.1 ID = 8.9A VGS = 10V 1.0 0.5 1 2 3 4 5 6 VGS, Gate-to-Source Voltage (V) Fig 3. Typical Transfer Characteristics www.irf.com 7 -60 -40 -20 0 20 40 60 80 100 120 140 160 T J , Junction Temperature (C) Fig 4. Normalized On-Resistance vs. Temperature 3 IRF8915PbF 10000 6.0 VGS = 0V, f = 1 MHZ C iss = C gs + C gd, C ds SHORTED C rss = C gd ID= 7.1A 1000 Ciss Coss Crss 100 VDS= 16V VDS= 10V 5.0 VGS, Gate-to-Source Voltage (V) C, Capacitance(pF) C oss = C ds + C gd 4.0 3.0 2.0 1.0 0.0 10 1 10 0 100 3 4 5 6 7 1000 ID, Drain-to-Source Current (A) 100.00 ISD, Reverse Drain Current (A) 2 Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage Fig 5. Typical Capacitance vs. Drain-to-Source Voltage T J = 25C 1.00 VGS = 0V 0.10 0.2 0.4 0.6 OPERATION IN THIS AREA LIMITED BY R DS(on) 100 TJ = 150C 10.00 0.8 1.0 1.2 1.4 VSD, Source-to-Drain Voltage (V) Fig 7. Typical Source-Drain Diode Forward Voltage 4 1 QG Total Gate Charge (nC) VDS, Drain-to-Source Voltage (V) 1.6 10 100sec 1msec 1 10msec T A = 25C Tj = 150C Single Pulse 0.1 0 1 10 100 1000 VDS, Drain-to-Source Voltage (V) Fig 8. Maximum Safe Operating Area www.irf.com IRF8915PbF 9 3.0 VGS(th) Gate threshold Voltage (V) 8 ID, Drain Current (A) 7 6 5 4 3 2 1 2.5 2.0 ID = 250A 1.5 1.0 0 25 50 75 100 125 -75 150 -50 -25 0 25 50 75 100 125 150 T J , Temperature ( C ) T A , Ambient Temperature (C) Fig 9. Maximum Drain Current vs. Ambient Temperature Fig 10. Threshold Voltage vs. Temperature 100 Thermal Response ( Z thJA ) D = 0.50 0.20 10 0.10 0.05 J 0.02 0.01 1 R1 R1 J 1 R2 R2 R3 R3 R4 R4 C 2 1 3 2 3 4 4 Ci= i/Ri Ci i/Ri 0.1 Ri (C/W) i (sec) 3.68799 0.000349 2.18971 0.005246 34.7298 0.470610 21.8971 13.52000 P DM SINGLE PULSE ( THERMAL RESPONSE ) t1 t2 Notes: 1. Duty factor D = t 1/ t 2 2. Peak T J = P DM x Z thJA 0.01 1E-006 1E-005 0.0001 0.001 0.01 0.1 1 +T A 10 100 t1 , Rectangular Pulse Duration (sec) Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient www.irf.com 5 IRF8915PbF 60 EAS , Single Pulse Avalanche Energy (mJ) RDS(on) , Drain-to -Source On Resistance (m ) 40 ID = 8.9A 35 30 25 T J = 125C 20 TJ = 25C 15 10 ID TOP 2.4A 2.9A BOTTOM 7.1A 50 40 30 20 10 0 1 2 3 4 5 6 7 8 9 10 25 50 75 100 125 150 Starting T J , Junction Temperature (C) VGS, Gate -to -Source Voltage (V) Fig 13. Maximum Avalanche Energy vs. Drain Current Fig 12. On-Resistance vs. Gate Voltage Current Regulator Same Type as D.U.T. V(BR)DSS tp 15V 50K 12V .3F DRIVER L VDS .2F D.U.T. D.U.T RG + - VDD IAS 20V VGS tp A 0.01 + V - DS VGS I AS 3mA IG Fig 14. Unclamped Inductive Test Circuit and Waveform ID Current Sampling Resistors Fig 15. Gate Charge Test Circuit LD VDS VDS + 90% V DD D.U.T VGS Pulse Width < 1s Duty Factor < 0.1% Fig 16. Switching Time Test Circuit 6 10% VGS td(on) tr td(off) tf Fig 17. Switching Time Waveforms www.irf.com IRF8915PbF D.U.T Driver Gate Drive + - - * D.U.T. ISD Waveform Reverse Recovery Current + RG * * * * dv/dt controlled by RG Driver same type as D.U.T. I SD controlled by Duty Factor "D" D.U.T. - Device Under Test V DD P.W. Period VGS=10V Circuit Layout Considerations * Low Stray Inductance * Ground Plane * Low Leakage Inductance Current Transformer D= Period P.W. + + - Body Diode Forward Current di/dt D.U.T. VDS Waveform Diode Recovery dv/dt Re-Applied Voltage Body Diode VDD Forward Drop Inductor Curent ISD Ripple 5% * VGS = 5V for Logic Level Devices Fig 15. Peak Diode Recovery dv/dt Test Circuit for N-Channel HEXFET(R) Power MOSFETs Id Vds Vgs Vgs(th) Qgs1 Qgs2 Qgd Qgodr Fig 16. Gate Charge Waveform www.irf.com 7 IRF8915PbF Power MOSFET Selection for Non-Isolated DC/DC Converters Control FET Synchronous FET Special attention has been given to the power losses in the switching elements of the circuit - Q1 and Q2. Power losses in the high side switch Q1, also called the Control FET, are impacted by the Rds(on) of the MOSFET, but these conduction losses are only about one half of the total losses. The power loss equation for Q2 is approximated by; * Ploss = Pconduction + Pdrive + Poutput ( 2 Ploss = Irms x Rds(on) ) Power losses in the control switch Q1 are given by; + (Qg x Vg x f ) Ploss = Pconduction+ Pswitching+ Pdrive+ Poutput Q + oss x Vin x f + (Qrr x Vin x f ) 2 This can be expanded and approximated by; Ploss = (Irms 2 x Rds(on ) ) Qgs 2 Qgd +I x x Vin x f + I x x Vin x f ig ig + (Qg x Vg x f ) + Qoss x Vin x f 2 This simplified loss equation includes the terms Qgs2 and Qoss which are new to Power MOSFET data sheets. Qgs2 is a sub element of traditional gate-source charge that is included in all MOSFET data sheets. The importance of splitting this gate-source charge into two sub elements, Qgs1 and Qgs2, can be seen from Fig 16. Qgs2 indicates the charge that must be supplied by the gate driver between the time that the threshold voltage has been reached and the time the drain current rises to Idmax at which time the drain voltage begins to change. Minimizing Qgs2 is a critical factor in reducing switching losses in Q1. Qoss is the charge that must be supplied to the output capacitance of the MOSFET during every switching cycle. Figure A shows how Qoss is formed by the parallel combination of the voltage dependant (nonlinear) capacitances Cds and Cdg when multiplied by the power supply input buss voltage. 8 *dissipated primarily in Q1. For the synchronous MOSFET Q2, Rds(on) is an important characteristic; however, once again the importance of gate charge must not be overlooked since it impacts three critical areas. Under light load the MOSFET must still be turned on and off by the control IC so the gate drive losses become much more significant. Secondly, the output charge Qoss and reverse recovery charge Qrr both generate losses that are transfered to Q1 and increase the dissipation in that device. Thirdly, gate charge will impact the MOSFETs' susceptibility to Cdv/dt turn on. The drain of Q2 is connected to the switching node of the converter and therefore sees transitions between ground and Vin. As Q1 turns on and off there is a rate of change of drain voltage dV/dt which is capacitively coupled to the gate of Q2 and can induce a voltage spike on the gate that is sufficient to turn the MOSFET on, resulting in shoot-through current . The ratio of Qgd/Qgs1 must be minimized to reduce the potential for Cdv/dt turn on. Figure A: Qoss Characteristic www.irf.com IRF8915PbF SO-8 Package Outline(Mosfet & Fetky) Dimensions are shown in milimeters (inches) ' ,1&+(6 0,1 0$; $ $ E F ' ( H %$6,& H %$6,& + . / \ ',0 % $ + >@ ( $ ; H H ;E >@ $ 0,//,0(7(56 0,1 0$; %$6,& %$6,& .[ & $ \ >@ ;F ;/ & $ % 127(6 ',0(16,21,1* 72/(5$1&,1*3(5$60(<0 &21752//,1*',0(16,210,//,0(7(5 ',0(16,216$5(6+2:1,10,//,0(7(56>,1&+(6@ 287/,1(&21)250672-('(&287/,1(06$$ ',0(16,21'2(6127,1&/8'(02/'3527586,216 02/'3527586,21612772(;&(('>@ ',0(16,21'2(6127,1&/8'(02/'3527586,216 02/'3527586,21612772(;&(('>@ ',0(16,21,67+(/(1*7+2)/($')2562/'(5,1*72 $68%675$7( )22735,17 ;>@ >@ ;>@ ;>@ SO-8 Part Marking Information (;$03/(7+,6,6$1,5) 026)(7 ,17(51$7,21$/ 5(&7,),(5 /2*2 ;;;; ) '$7(&2'( <:: 3 ',6*1$7(6/($')5(( 352'8&7 237,21$/ < /$67',*,72)7+(<($5 :: :((. $ $66(0%/<6,7(&2'( /27&2'( 3$57180%(5 Note: For the most current drawing please refer to IR website at: http://www.irf.com/package/ www.irf.com 9 IRF8915PbF SO-8 Tape and Reel Dimensions are shown in millimeters (inches) TERMINAL NUMBER 1 12.3 ( .484 ) 11.7 ( .461 ) 8.1 ( .318 ) 7.9 ( .312 ) FEED DIRECTION NOTES: 1. CONTROLLING DIMENSION : MILLIMETER. 2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS(INCHES). 3. OUTLINE CONFORMS TO EIA-481 & EIA-541. 330.00 (12.992) MAX. 14.40 ( .566 ) 12.40 ( .488 ) NOTES : 1. CONTROLLING DIMENSION : MILLIMETER. 2. OUTLINE CONFORMS TO EIA-481 & EIA-541. Note: For the most current drawing please refer to IR website at http://www.irf.com/package/ Notes: Repetitive rating; pulse width limited by max. junction temperature. Starting TJ = 25C, L = 0.59mH, RG = 25, IAS = 7.1A. Pulse width 400s; duty cycle 2%. When mounted on 1 inch square copper board. R is measured at TJ of approximately 90C. Data and specifications subject to change without notice. This product has been designed and qualified for the Consumer market. Qualifications Standards can be found on IR's Web site. IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information.07/2008 10 www.irf.com