Electronics Company Marketing Information BSM 150 GT 170 DL 118.11 94.5 119 121.5 99.9 4 x 19.05 = 76.2 3.81 19.05 19 1 18 2 3 4 16 17 5 6 7 3.81 8 9 15 10 11 12 1.15x1.0 15.24 5 x 15.24 =76.2 110 21 1 2 3 4 19 13 17 5 6 7 8 16 9 10 11 12 15 01.07.1998 http://store.iiic.cc/ BSM 150 GT 170 DL vorlaufige Daten preliminary data Hochstzulassige Werte / Maximum rated values Elektrische Eigenschaften / Electrical properties Kollektor-Emitter-Sperrspannung Kollektor-Dauergleichstrom collector-emitter voltage DC-collector current Periodischer Kollektor Spitzenstrom Gesamt-Verlustleistung Gate-Emitter-Spitzenspannung Dauergleichstrom Periodischer Spitzenstrom Grenzlastintegral der Diode Isolations-Prufspannung repetitive peak collector current total power dissipation gate-emitter peak voltage DC forward current repetitive peak forw. current I2t - value, Diode insulation test voltage T C = 80C T C = 25C tp = 1 ms, TC = 80C T C = 25C, Transistor tp = 1 ms VR = 0V, tp = 10ms, TVj = 125C RMS, f = 50 Hz, t = 1 min. VCES IC,nom. IC ICRM Ptot VGES IF IFRM I2t VISOL collector-emitter saturation voltage Gate-Schwellenspannung Eingangskapazitat Kollektor-Emitter Reststrom gate threshold voltage input capacitance collector-emitter cut-off current Gate-Emitter Reststrom Einschaltverzogerungszeit (induktive Last) gate-emitter leakage current turn-on delay time (inductive load) Anstiegszeit (induktive Last) Abschaltverzogerungszeit (ind. Last) Fallzeit (induktive Last) rise time (inductive load) turn off delay time (inductive load) fall time (inductive load) Einschaltverlustenergie pro Puls turn-on energy loss per pulse Abschaltverlustenergie pro Puls turn-off energy loss per pulse Kurzschluverhalten SC Data Modulinduktivitat stray inductance module V A A A W V A A A2s kV max. 3,3 6,5 0,3 200 V V V nF mA mA nA min. 4,5 - typ. 2,7 3,2 5,5 10 0,05 4 - - 0,1 0,1 - s - s - 0,1 0,1 - s - s - 0,8 0,9 - s - s - 0,03 0,03 - s - s - 70 - mWs - 46 - mWs - 600 LsCE - 25 IF = 150A, VGE = 0V, Tvj = 25C IF = 150A, VGE = 0V, Tvj = 125C IF = 150A, - diF/dt = 2250A/sec VR = 900V, VGE = -10V, Tvj = 25C VR = 900V, VGE = -10V, Tvj = 125C IF = 150A, - diF/dt = 2250A/sec VR = 900V, VGE = -10V, Tvj = 25C VR = 900V, VGE = -10V, Tvj = 125C IF = 150A, - diF/dt = 2250A/sec VR = 900V, VGE = -10V, Tvj = 25C VR = 900V, VGE = -10V, Tvj = 125C VF - 2,2 2 2,6 V - V - 110 165 - A - A - 17 38 - As - As - 8 15 - mWs - mWs Transistor / transistor, DC RthJC - - -40 -40 - Charakteristische Werte / Characteristic values: Transistor Kollektor-Emitter Sattigungsspannung 1700 150 300 300 1250 20 150 300 7200 3,4 IC = 150A, VGE = 15V, Tvj = 25C IC = 150A, VGE = 15V, Tvj = 125C IC = 7mA, VCE = VGE, Tvj = 25C f = 1MHz,Tvj = 25C,VCE = 25V, VGE = 0V VCE = 1700V, VGE = 0V, Tvj = 25C VCE = 1700V, VGE = 0V, Tvj = 125C VCE = 0V, VGE = 20V, Tvj = 25C IC = 150A, VCE = 900V VGE = 15V, RG = 10, Tvj = 25C VGE = 15V, RG = 10, Tvj = 125C IC = 150A, VCE = 900V VGE = 15V, RG = 10, Tvj = 25C VGE = 15V, RG = 10, Tvj = 125C IC = 150A, VCE = 900V VGE = 15V, RG = 10, Tvj = 25C VGE = 15V, RG = 10, Tvj = 125C IC = 150A, VCE = 900V VGE = 15V, RG = 10, Tvj = 25C VGE = 15V, RG = 10, Tvj = 125C IC = 150A, VCE = 900V, VGE = 15V RG = 10, Tvj = 125C, LS = 60nH IC = 150A, VCE = 900V, VGE = 15V RG = 10, Tvj = 125C, LS = 60nH tP 10sec, VGE 15V, RG = 10 T Vj125C, VCC=1000V VCEmax=VCES -LsCE x dI/dt vCE sat vGE(th) Cies ICES IGES td,on tr td,off tf Eon Eoff ISC - A - nH Charakteristische Werte / Characteristic values: Diode Durchlaspannung forward voltage Ruckstromspitze peak reverse recovery current Sperrverzogerungsladung Abschaltenergie pro Puls recovered charge reverse recovery energy Thermische Eigenschaften / Thermal properties Innerer Warmewiderstand Ubergangs-Warmewiderstand Hochstzul. Sperrschichttemperatur Betriebstemperatur Lagertemperatur thermal resistance, junction to case Diode / diode, DC thermal resistance, case to heatsink pro Module / per Module dPaste 50m / dgrease 50m max. junction temperature operating temperature storage temperature IRM Qr Erec RthCK T vj T op T stg 0,1 K/W 0,24 K/W 0,012 150 125 125 K/W C C C Mechanische Eigenschaften / Mechanical properties Innere Isolation Kriechstrecke Luftstrecke CTI Anzugsdrehmoment f. mech. Befestigung Gewicht internal insulation creepage distance clearance comperative tracking index mounting torque weight max. G Al2O3 20 11 225 5 300 mm mm Nm g Mit dieser technischen Information werden Halbleiterbauelemente spezifiziert, jedoch keine Eigenschaften zugesichert. Sie gilt in Verbindung mit den zugehorigen Technischen Erlauterungen. This technical information specifies semiconductor devices but promises no characteristics. It is valid in combination with the belonging technical notes. http://store.iiic.cc/ BSM 150 GT 170 DL 300 300 IC 250 [A] IC 250 [A] 200 200 150 150 Tj = 25C Tj = 125C 100 100 50 50 0 0,0 0,5 1,0 1,5 2,0 2,5 3,0 3,5 BSM 150 GT 170 DL / 1 4,0 4,5 VCE [V] 5,0 0 0,0 0,5 1,0 1,5 2,0 2,5 3,0 3,5 4,0 4,5 VCE [V] 2,0 2,5 VF [V] BSM 150 GT 170 DL / 2 Bild / Fig. 1 Ausgangskennlinie (typisch) / Output characteristic (typical) IC = f(VCE) VGE = 15V 5,0 Bild / Fig. 2 Ausgangskennlinienfeld (typisch) / Output characteristic (typical) IC = f(VCE) Tvj = 125C 300 300 Tj = 25C Tj = 125C IC 250 [A] 200 150 150 100 100 50 50 5 6 7 8 Tj = 25C Tj = 125C IF 250 [A] 200 0 VGE = 19V VGE = 15V VGE = 13V VGE = 11V VGE = 9V 9 10 BSM 150 GT 170 DL / 3 11 12 VGE [V] 13 0 0,0 0,5 1,0 1,5 BSM 150 GT 170 DL / 4 3,0 Bild / Fig. 4 Durchlakennlinie der Inversdiode (typisch) / Forward characteristic of inverse diode (typical) IF = f(VF) Bild / Fig. 3 Ubertragungscharakteristic (typisch) / Transfer characteristic (typical) IC = f(VGE) VCE = 20V 160 250 140 Eoff Eon Erec 200 E [mJ] Eoff Eon Erec E 120 [mJ] 100 150 80 100 60 40 50 20 0 0 50 100 150 BSM 150 GT 170 DL / 5 Bild / Fig. 5 Schaltverluste (typisch) / Switching losses (typical) Eon = f(IC), Eoff = f(IC), Erec = f(IC) Rgon = Rgoff = 10, VCE = 900V, Tj = 125C 200 250 IC [A] 300 0 0 10 20 BSM 150 GT 170 DL / 6 Bild / Fig. 6 Schaltverluste (typisch) / Switching losses (typical) Eon = f(RG), Eoff = f(RG), Erec = f(RG) IC = 150A, VCE = 900V, Tj = 125C http://store.iiic.cc/ 30 40 50 RG [] BSM 150 GT 170 DL 350 300 IC,Modul IC [A] 250 IC,Chip 200 150 100 50 0 0 200 400 600 800 1000 BSM 150 GT 170 DL / 7 1200 1400 1600 1800 VCE [V] Bild / Fig. 7 Sicherer Arbeitsbereich (RBSOA) / Reverse bias safe operation area (RBSOA) Rg = 10, Tvj = 125C http://store.iiic.cc/