CREAT BY ART
- Glass passivated chip junction
- Ideal for automated placement
- Low forward voltage drop
- Ultrafast recovery time for high efficiency
- Built-in strain relief
- Halogen-free according to IEC 61249-2-21 definition
Molding compound, UL flammability classification rating 94V-0
Part No. with suffix "H" means AEC-Q101 qualified
Packing code with suffix "G" means green compound (halogen-free)
Terminal: Matte tin plated leads, solderable per JESD22-B102
Meet JESD 201 class 2 whisker test
V
RRM
50 100 200 400 600 800 1000 V
V
RMS
35 70 140 280 420 560 700 V
V
DC
50 100 200 400 600 800 1000 V
I
F(AV)
A
t
rr
ns
C
J
pF
T
J
°C
T
STG
°C
Note 1: Pulse test with PW=300μs, 1% duty cycle
Note 2: Reverse Recovery Test Conditions: I
F
=0.5A, I
R
=1.0A, I
RR
=0.25A
Note 3: Measured at 1 MHz and Applied Reverse Voltage of 4.0V D.C.
Document Number: DS_D1411072 Version: M15
US1A - US1M
Taiwan Semiconductor
1A, 50V - 1000V Hi
g
h Efficient Surface Mount Rectifiers
FEATURES
Moisture sensitivity level: level 1, per J-STD-020
- Compliant to RoHS Directive 2011/65/EU and
in accordance to WEEE 2002/96/EC
MECHANICAL DATA
Case: DO-214AC (SMA)
DO-214AC (SMA)
Polarity: Indicated by cathode band
Weight: 0.06 g (approximately)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS (T
A
=25°C unless otherwise noted)
Maximum repetitive peak reverse voltage
PARAMETER SYMBOL US
1A
US
1B
US
1D
30
US
1J
US
1K
US
1M UNIT
US
1G
A
Maximum instantaneous forward voltage (Note 1)
@ 1 A V
F
1.0 V
Maximum RMS voltage
Maximum DC blocking voltage
Maximum average forward rectified current 1
Peak forward surge current, 8.3 ms single half sine-wave
superimposed on rated load I
FSM
Maximum reverse recovery time (Note 2)
Typical junction capacitance (Note 3)
I
R
5μA
150
Maximum reverse current @ rated V
R
T
J
=25°C
T
J
=125°C
R
θJL
R
θJA
Operating junction temperature range - 55 to +150
Storage temperature range - 55 to +150
27
75
Typical thermal resistance °C/W
1.7
50 75
15 10
PART NO.
PART NO.
(T
A
=25°C unless otherwise noted)
Document Number: DS_D1411072 Version: M15
US1A - US1M
Taiwan Semiconductor
RATINGS AND CHARACTERISTICS CURVES
ORDERING INFORMATION
PART NO.
SUFFIX PACKING CODE PACKING CODE
SUFFIX PACKAGE PACKING
US1x
(Note 1)
H
R3
G
SMA 1,800 / 7" Plastic reel
R2 SMA 7,500 / 13" Paper reel
M2 SMA 7,500 / 13" Plastic reel
F3 Folded SMA 1,800 / 7" Plastic reel
F2 Folded SMA 7,500 / 13" Paper reel
F4 Folded SMA 7,500 / 13" Plastic reel
N/A E3 Clip SMA 1,800 / 7" Plastic reel
E2 Clip SMA 7,500 / 13" Plastic reel
Note 1: "x" defines voltage from 50V (US1A) to 1000V (US1M)
EXAMPLE
PREFERRED P/N PART NO.
SUFFIX PACKING CODE PACKING CODE
SUFFIX DESCRIPTION
AEC-Q101 qualified
Green compound
US1MHR3G US1M H R3 G
0
0.5
1
1.5
0 255075100125150175
AVERAGE FORWARD CURRENT (A)
LEAD TEMPERATURE (°C)
FIG.1 MAXIMUM FORWARD CURRENT
DERATING CURVE
RESISTIVE OR
INDUCTIVE LOAD
0
10
20
30
40
50
1 10 100
PEAK FORWARD SURGE CURRENT
(A)
NUMBER OF CYCLES AT 60 Hz
FIG. 2 MAXIMUM NON-REPETITIVE FORWARD
SURGE CURRENT
8.3ms Single Half Sine Wave
0.01
0.1
1
10
100
0 20406080100
INSTANTANEOUS REVERSE CURRENT (μA)
PERCENT OF RATED PEAK REVERSE VOLTAGE (%)
FIG. 4 TYPICAL REVERSE CHARACTERISTICS
TJ=25°C
TJ=100°C
0.1
1
10
0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 2
INSTANTANEOUS FORWARD CURRENT
(A)
FORWARD VOLTAGE (V)
FIG. 3 TYPICAL FORWARD CHARACTERISTICS
US1J-US1M
US1A-US1G
PULSE WIDTH=300μs
1% DUTY CYCLE
Min Max Min Max
A 1.27 1.58 0.050 0.062
B 4.06 4.60 0.160 0.181
C 2.29 2.83 0.090 0.111
D 1.99 2.50 0.078 0.098
E 0.90 1.41 0.035 0.056
F 4.95 5.33 0.195 0.210
G 0.10 0.20 0.004 0.008
H 0.15 0.31 0.006 0.012
MARKING DIAGRAM
P/N = Specific Device Code
G = Green Compound
YW = Date Code
F = Factory Code
Document Number: DS_D1411072 Version: M15
PACKAGE OUTLINE DIMENSIONS
DIM. Unit (mm) Unit (inch)
SUGG ESTED PAD LAYO UT
DO-214AC (SMA)
0.060
C 3.93 0.155
Symbol Unit (mm) Unit (inch)
A 1.68 0.066
US1A - US1M
Taiwan Semiconductor
D 2.41 0.095
E 5.45 0.215
B1.52
1
10
100
0.1 1 10 100
CAPACITANCE (pF)
REVERSE VOLTAGE (V)
FIG. 5 TYPICAL JUNCTION CAPACITANCE
f=1.0MHz
Vsig=50mVp-p
US1
A
-US1G
US1J-US1M
0.1
1
10
100
0.01 0.1 1 10 100
TRANSIENT THERMAL IMPEDANCE A
(°C/W)
T-PULSE DURATION(s)
FIG. 6 TYPICAL TRANSIENT THERMAL IMPEDANCE
CREAT BY ART
assumes no responsibility or liability for any errors or inaccuracies.
Information contained herein is intended to provide a product description only. No license, express or implied, to
any intellectual property rights is granted by this document. Except as provided in TSC's terms and conditions of
sale for such products, TSC assumes no liability whatsoever, and disclaims any express or implied warranty,
relating to sale and/or use of TSC products including liability or warranties relating to fitness for a particular purpose,
merchantability, or infringement of any patent, copyright, or other intellectual property right.
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications.
Customers using or selling these products for use in such applications do so at their own risk and agree to fully
indemnify TSC for any damages resulting from such improper use or sale.
Document Number: DS_D1411072 Version: M15
US1A - US1M
Taiwan Semiconductor
Notice
Specifications of the products displayed herein are subject to change without notice. TSC or anyone on its behalf,
