DSA30C200PB preliminary Schottky Diode Gen VRRM = 200 V I FAV = 2x VF = 15 A 0.78 V High Performance Schottky Diode Low Loss and Soft Recovery Common Cathode Part number DSA30C200PB Backside: cathode 1 2 3 Features / Advantages: Applications: Package: TO-220 Very low Vf Extremely low switching losses Low Irm values Improved thermal behaviour High reliability circuit operation Low voltage peaks for reduced protection circuits Low noise switching Rectifiers in switch mode power supplies (SMPS) Free wheeling diode in low voltage converters Industry standard outline RoHS compliant Epoxy meets UL 94V-0 IXYS reserves the right to change limits, conditions and dimensions. (c) 2013 IXYS all rights reserved Data according to IEC 60747and per semiconductor unless otherwise specified 20131031a DSA30C200PB preliminary Ratings Schottky Conditions Symbol VRSM Definition max. non-repetitive reverse blocking voltage TVJ = 25C max. 200 Unit V VRRM max. repetitive reverse blocking voltage TVJ = 25C 200 V IR reverse current, drain current VR = 200 V TVJ = 25C 250 A VR = 200 V TVJ = 125C 2.5 mA TVJ = 25C 0.94 V 1.10 V 0.78 V VF IF = forward voltage drop I FAV average forward current VF0 threshold voltage rF slope resistance R thJC thermal resistance junction to case min. 15 A IF = 30 A IF = 15 A IF = 30 A TVJ = 125 C TC = 155C rectangular 0.95 V T VJ = 175 C 15 A TVJ = 175 C 0.53 V d = 0.5 for power loss calculation only R thCH thermal resistance case to heatsink Ptot total power dissipation I FSM max. forward surge current t = 10 ms; (50 Hz), sine; VR = 0 V TVJ = 45C CJ junction capacitance VR = TVJ = 25C IXYS reserves the right to change limits, conditions and dimensions. (c) 2013 IXYS all rights reserved typ. 10.8 m 1.75 K/W K/W 0.50 TC = 25C 48 V f = 1 MHz Data according to IEC 60747and per semiconductor unless otherwise specified 85 320 47 W A pF 20131031a DSA30C200PB preliminary Package Ratings TO-220 Symbol I RMS Definition Conditions RMS current per terminal min. TVJ virtual junction temperature T op operation temperature Tstg storage temperature -55 typ. max. 35 Unit A -55 175 C -55 150 C 150 C 1) Weight 2 MD mounting torque FC mounting force with clip Product Marking Part Number 0.4 0.6 Nm 20 60 N Part number D S A 30 C 200 PB XXXXXX Logo Assembly Line Lot # g = = = = = = = Diode Schottky Diode low VF Current Rating [A] Common Cathode Reverse Voltage [V] TO-220AB (3) Zyyww abcdef Date Code Ordering Standard Part Number DSA30C200PB Similar Part DSA30C200IB Equivalent Circuits for Simulation I V0 R0 Marking on Product DSA30C200PB Package TO-262 (I2Pak) (3) * on die level Delivery Mode Tube Code No. 507014 Voltage class 200 T VJ = 175 C Schottky V 0 max threshold voltage 0.53 V R 0 max slope resistance * 7.6 m IXYS reserves the right to change limits, conditions and dimensions. (c) 2013 IXYS all rights reserved Quantity 50 Data according to IEC 60747and per semiconductor unless otherwise specified 20131031a DSA30C200PB preliminary Outlines TO-220 Dim. Millimeter Min. Max. Inches Min. Max. A A1 A2 4.32 1.14 2.29 4.82 1.39 2.79 0.170 0.045 0.090 0.190 0.055 0.110 b b2 0.64 1.15 1.01 1.65 0.025 0.045 0.040 0.065 C D 0.35 14.73 0.56 16.00 0.014 0.580 0.022 0.630 E e H1 9.91 2.54 5.85 10.66 BSC 6.85 0.390 0.100 0.230 0.420 BSC 0.270 L L1 12.70 2.79 13.97 5.84 0.500 0.110 0.550 0.230 OP Q 3.54 2.54 4.08 3.18 0.139 0.100 0.161 0.125 A A1 OP H1 Q E D 4 3 L 3x b2 2 L1 1 3x b C 2x e A2 1 IXYS reserves the right to change limits, conditions and dimensions. (c) 2013 IXYS all rights reserved 2 3 Data according to IEC 60747and per semiconductor unless otherwise specified 20131031a