SOT223 NPN SILICON PLANAR
MEDIUM POWER TRANSISTOR
ISSUE 3 AUGUST 1995 ✪
FEATURES
* Suitable for AF drivers and output stages
* High collector current and Low VCE(sat)
COMPLEMENTARY TYPE BCP53
PARTMARKING DETAILS BCP56
BCP56 10
BCP56 16
ABSOLUTE MAXIMUM RATINGS.
PARAMETER SYMBOL VALUE UNIT
Collector-Base Voltage VCBO 100 V
Collector-Emitter Voltage VCEO 80 V
Emitter-Base Voltage VEBO 5V
Peak Pulse Current ICM 1.5 A
Continuous Collector Current IC1A
Power Dissipation at Tamb
=25°C Ptot 2W
Operating and Storage Temperature
Range
Tj:Tstg -55 to +150 °C
ELECTRICAL CHARACTERISTICS (at Tamb
= 25°C unless otherwise stated).
PARAMETER SYMBOL MIN. TYP. MAX. UNIT CONDITIONS.
Collector-Base
Breakdown Voltage
V(BR)CBO 100 V IC=100µA
Collector-Emitter
Breakdown Voltage
V(BR)CEO 80 V IC= 10mA *
Emitter-Base
Breakdown Voltage
V(BR)EBO 5V
IE=10µA
Collector Cut-Off
Current
ICBO 100
20
nA
µA
VCB
=30V
VCB
=30V, Tamb
=150°C
Emitter Cut-Off Current IEBO 10 µAVEB=5V
Collector-Emitter
Saturation Voltage
VCE(sat) 0.5 V IC=500mA, IB=50mA*
Base-Emitter Turn-On
Voltage
VBE(on) 1.0 V IC=500mA, VCE
=2V*
Static Forward Current
Transfer Ratio
hFE
BCP56-10
BCP56-16
40
25
63
100
100
160
250
160
250
IC=150mA, VCE
=2V*
IC=500mA, VCE
=2V*
IC=150mA, VCE
=2V*
IC=150mA, VCE
=2V*
Transition Frequency fT125 MHz IC=50mA, VCE
=10V,
f=100MHz
*Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤2%
BCP56
C
C
E
B
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