Current
1.0 A
For surface mounted application
Metal to silicon rectifier, majority carrier conduction
Low power loss, high efficiency
High current capability. low VF
High surge current capability
CASE:
SMB/DO-214AA
MECHANICAL DATA
Terminals: Pure tin plated, lead free
Polarity: Indicated by cathode band
Weight: 0.093 g.
SK12B - SK115B
1 Amp. Surface Mount Schottky Barrier Rectifiers
Maximum Ratings and Electrical Characteristics at 25 ºC
Easy pick and place
Voltage
20 V to 150 V
Epitaxial construction
High temperature soldering:
Plastic material used carriers Underwraiters
Laboratory Classification 94V-0
260 ºC / 10 seconds at terminals
Case: Molded plastic
Packaging: 16 mm tape EIA-STD RS-481.
Mar - 11
Electrical Characteristics at Tamb = 25 °C
Dimensions in mm.
Typical Thermal Resistance
R
thj-l
25 °C/W
V
F
Maximum Instantaneous Forward Voltage
@ 1.0 A
0.5 V 0.75 V 0.85 V 0.95 V
I
R
5.0 mA
Maximum DC Reverse Current (Note 1) T
A
= 25 °C
at Rated DC Blocking Voltage TA =100°C
0.5 mA
10 mA
0.1 mA
(Note 2)
2.0 mA
Pb
V
RRM
Maximum Recurrent Peak Reverse Voltage (V)
Maximum RMS Voltage (V)
I
FSM
8.3 ms.Peak Forward Surge Current
50
V
DC
Maximum DC Blocking Voltage (V)
50
30 A
V
RMS
35
T
j
Operating Temperature Range -55°C to +150°C
SK
15B
I4
Marking code
(Jedec Method)
20
20
14
SK
12B
I1
30
30
21
SK
13B
I2
40
40
28
SK
14B
I3
60
60
42
SK
16B
I5
90
90
63
SK
19B
I6
100
100
70
SK
110B
I7
150
150
105
SK
115B
I8
I
F(AV)
Maximum Average Forward Rectified Current
at T
L
(See graphic) 1.0 A
T
stg
Storage Temperature Range
-55°C to +150°C
-55°C to +125°C
TA =125°C
--
--
C
j
Typical Junction Capacitance
(Note 3)
110 pF
NOTES: 1. Pulse Test With PW = 300 µsec, 1% Duty Cycle
3. Measured on P.C. Board with 10mm x10mm Copper Pad Areas
2. Measured at 1 MHz and Applied Reverse Voltage of 4.0 V D.C.
XX = Marking code
WW = Week code
Y = Year code