EGP20A thru EGP20G
Document Number 88583
10-Aug-05
Vishay General Semiconductor
www.vishay.com
1
P
a
t
e
n
t
e
d
*
DO-204AC (DO-15)
®
* Glass Encapsulation
technique is covered by
Patent No. 3,996,602,
brazed-lead assembly
to Patent No. 3,930,306
Glass Passivated Ultrafast Rectifier
Major Ratings and Characteristics
IF(AV) 2.0 A
VRRM 50 V to 400 V
IFSM 75 A
trr 50 ns
VF0.95 V, 1.25 V
Tj max. 150 °C
Features
• Cavity-free glass-passivated junction
• Ultrafast reverse recovery time
• Low forward voltage drop
• Low leakage current
• Low switching losses, high efficiency
• High forward surge capability
• Solder Dip 260 °C, 40 seconds
Typical Applications
For use in high frequency rectification and freewheel-
ing application in switching mode converters and
inverters for consumer, computer and Telecommuni-
cation
Mechanical Data
Case: DO-204AC, molded epoxy over glass body
Epoxy meets UL-94V-0 Flammability rating
Terminals: Matte tin plated leads, solderable per
J-STD-002B and JESD22-B102D
E3 suffix for commercial grade, HE3 suffix for high
reliability grade (AEC Q101 qualified)
Polarity: Color band denotes cathode end
Maximum Ratings
TA = 25 °C unless otherwise specified
Parameter Symbol EGP20A EGP20B EGP20C EGP20D EGP20F EGP20G Unit
Maximum repetitive peak reverse voltage VRRM 50 100 150 200 300 400 V
Maximum RMS voltage VRMS 35 70 105 140 210 280 V
Maximum DC blocking voltage VDC 50 100 150 200 300 400 V
Maximum average forward rectified current 0.375"
(9.5 mm) lead length at TA = 55 °C
IF(AV)2.0 A
Peak forward surge current 8.3 ms single half sine-
wave superimposed on rated load
IFSM 75 A
Operating and storage temperature range TJ,TSTG - 65 to + 150 °C
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Document Number 88583
10-Aug-05
EGP20A thru EGP20G
Vishay General Semiconductor
Electrical Characteristics
TA = 25 °C unless otherwise specified
Thermal Characteristics
TA = 25 °C unless otherwise specified
Notes:
(1) Thermal resistance from junction to ambient, and from junction to lead at 0.375" (9.5 mm) lead length, P.C.B. mounted
Parameter Test condition Symbol EGP20A EGP20B EGP20C EGP20D EGP20F EGP20G Unit
Maximum instantaneous
forward voltage
at 2.0 A VF 0.95 1.25 V
Maximum DC reverse current
at rated DC blocking voltage
TA = 25 °C
TA = 125 °C
IR 5.0
100
µA
Maximum reverse recovery
time
at IF = 0.5 A, IR = 1.0 A,
Irr = 0.25 A
trr 50 ns
Typical junction capacitance at 4.0 V, 1 MHz CJ 70 45 pF
Parameter Symbol EGP20A EGP20B EGP20C EGP20D EGP20F EGP20G Unit
Typical thermal resistance (1) RθJA
RθJL
40
15
°C/W
EGP20A thru EGP20G
Document Number 88583
10-Aug-05
Vishay General Semiconductor
www.vishay.com
3
Ratings and Characteristics Curves
(TA = 25 °C unless otherwise noted)
Figure 1. Maximum Forward Current Derating Curve
Figure 2. Maximum Non-Repetitive Peak Forward Surge Current
Figure 3. Typical Instantaneous Forward Characteristics
0
2.0
3.0
0 25 50 75 100 125 150 175
Average Forward Rectified Current (A)
Ambient Temperature (°C)
1.0
Resistive or Inductive Load
0.375" (9.5mm) Lead Length
0
15
30
45
60
75
90
1 10010
Peak Forward Surge Current (A)
Number of Cycles at 60 HZ
TJ=T
Jmax.
8.3ms Single Half Sine-Wave
0.2 0.4 0.6 0.81 1.2
Instantaneous Forward Voltage (V)
100
10
1
0.1
0.01
Instantaneous Forward Current (A)
Tj = 150 °C
Tj = 125 °C
Tj = 100 °C
Tj = 25 °C
EGP20A~EGP20D
Figure 4. Typical Reverse Leakage Characteristics
Figure 5. Typical Instantaneous Forward Characteristics
Figure 6. Typical Reverse Leakage Characteristics
Tj = 150 °C
Tj = 125 °C
Tj = 100 °C
Tj = 25 °C
0406080 10020
Percent of Peak Reverse Voltage (%)
Instantaneous Reverse Leakage Current (µA)
100
10
1
0.1
0.01
0.001
EGP20A~EGP20D
Tj = 150 °C
Tj = 125 °C
Tj = 100 °C
Tj = 25 °C
100
10
1
0.1
0.01
0.2 0.4 0.6 0.81 1.2 1.4 1.6 1.8
Instantaneous Forward Voltage (V)
EGP20F~EGP20G
Instantaneous Forward Current (A)
T
j
= 150 °C
T
j
= 125 °C
T
j
= 100 °C
T
j
= 25 °C
100
10
1
0.1
0.01
0.001
020406080 100
Percent of Peak Reverse Voltage (%)
Instantaneous Reverse Leakage Current (µA)
EGP20F~EGP20G
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Document Number 88583
10-Aug-05
EGP20A thru EGP20G
Vishay General Semiconductor
Package outline dimensions in inches (millimeters)
Figure 7. Typical Junction Capacitance
Reverse Voltage (V)
Junction Capacitance (pF)
0.1 1 10 100 1000
0
20
40
60
80
100
120
140
EGP20A - EGP20D
EGP20F & EGP20G
TJ=25°C
f = 1.0 MHZ
Vsig = 50mVp-p
Figure 8. Typical Transient Thermal Impedance
t, Pulse Duration (sec.)
Transient Thermal Impedance (°C/W)
0.01 0.1 110 100
0.1
1
10
100
0.034 (0.86)
0.028 (0.71)
Dia.
0.140 (3.6)
0.104 (2.6)
Dia.
0.230 (5.8)
0.300 (7.6)
1.0 (25.4)
min.
1.0 (25.4)
min.
DO-204AC (DO-15)
