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MMBD1401 / MMBD1403 / MMBD1404 / MMBD1405 Small Signal Diodes Connection Diagrams 1401 3 1 1404 3 2 3 3 1403 2NC 1 2 3 1405 2 1 2 1 1 SOT-23 Ordering Information Part Number Top Mark Package Packing Method MMBD1401 29 SOT-23 3L Tape and Reel MMBD1403 32 SOT-23 3L Tape and Reel MMBD1404 33 SOT-23 3L Tape and Reel MMBD1405 34 SOT-23 3L Tape and Reel Absolute Maximum Ratings(1), (2) Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be operable above the recommended operating conditions and stressing the parts to these levels is not recommended. In addition, extended exposure to stresses above the recommended operating conditions may affect device reliability. The absolute maximum ratings are stress ratings only. Values are at TA = 25C unless otherwise noted. Symbol Parameter Value Unit VRRM Maximum Repetitive Reverse Voltage 200 V IF(AV) Average Rectified Forward Current 200 mA IFSM Non-Repetitive Peak Forward Surge Current TSTG Storage Temperature Range TJ Operating Junction Temperature Pulse Width = 1.0 second 1.0 Pulse Width = 1.0 microsecond 2.0 A -55 to +150 C 150 C Notes: 1. These ratings are based on a maximum junction temperature of 150C. 2. These are steady-state limits. Fairchild Semiconductor should be consulted on applications involving pulsed or low-duty-cycle operations. (c) 2002 Fairchild Semiconductor Corporation MMBD1401 / MMBD1403 / MMBD1404 / MMBD1405 Rev. 1.1.0 www.fairchildsemi.com MMBD1401 / MMBD1403 / MMBD1404 / MMBD1405 -- Small Signal Diodes November 2014 Values are at TA = 25C unless otherwise noted. Symbol PD RJA Parameter Value Unit Power Dissipation 350 mW Thermal Resistance, Junction-to-Ambient 357 C/W Electrical Characteristics Values are at TA = 25C unless otherwise noted. Symbol BV Parameter Breakdown Voltage Conditions IR = 100 A Min. IF = 10 mA VF Forward Voltage Max. 200 Unit V 800 mV 920 mV IF = 200 mA 1.0 V IF = 300 mA 1.1 V VR = 120 V 40 nA IF = 50 mA 760 IR Reverse Current VR = 175 V 100 nA CT Total Capacitance VR = 0, f = 1.0 MHz 2.0 pF trr Reverse Recovery Time IF = IR = 30 mA, IRR = 3.0 mA, RL = 100 50 nS (c) 2002 Fairchild Semiconductor Corporation MMBD1401 / MMBD1403 / MMBD1404 / MMBD1405 Rev. 1.1.0 www.fairchildsemi.com 2 MMBD1401 / MMBD1403 / MMBD1404 / MMBD1405 -- Small Signal Diodes Thermal Characteristics IR - REVERSE CURRENT (nA) VVRR - REVERSE VOLTAGE (V) 325 Ta= 25C 300 275 3 5 10 20 30 50 I R - REVERSE CURRENT (uA) 80 70 60 50 40 30 200 220 240 VR - REVERSE VOLTAGE (V) 30 20 10 0 55 75 95 115 135 155 175 195 V R - REVERSE VOLTAGE (V) Figure 2. Reverse Current vs. Reverse Voltage IR - 55 to 205 V Ta= 25C 20 180 40 GENERAL RULE: The Reverse Current of a diode will approximately double for every ten (10) Degree C increase in Temperature V VFF - FORWARD VOLTAGE (mV) IIRR - REVERSE CURRENT (nA) 90 Ta= 25C 100 Figure 1. Reverse Voltage vs. Reverse Current BV - 1.0 to 100 A 100 50 255 Ta= 25C 450 400 350 300 250 1 GENERAL RULE: The Reverse Current of a diode will approximately double for every ten Degree C increase in Temperature Figure 3. Reverse Current vs. Reverse Voltage IR - 180 to 255 V 2 3 5 10 20 30 50 IF - FORWARD CURRENT (uA) 100 Figure 4. Forward Voltage vs. Forward Current VF - 1.0 to 100 A VVFF - FORWARD VOLTAGE (mV) VVF F - FORWARD VOLTAGE (mV) VF - 0.1 to 10 mA 725 Ta= 25C 700 650 600 550 500 450 0.1 0.2 0.3 0.5 1 2 3 5 I F - FORWARD CURRENT (mA) 10 Figure 5. Forward Voltage vs. Forward Current VF - 0.1 to 10 mA (c) 2002 Fairchild Semiconductor Corporation MMBD1401 / MMBD1403 / MMBD1404 / MMBD1405 Rev. 1.1.0 1.4 Ta= 25C 1.3 1.2 1.1 1 0.9 0.8 0.7 10 20 30 50 100 200 300 IF - FORWARD CURRENT (mA) 500 800 Figure 6. Forward Voltage vs. Forward Current VF - 10 to 800 mA www.fairchildsemi.com 3 MMBD1401 / MMBD1403 / MMBD1404 / MMBD1405 -- Small Signal Diodes Typical Performance Characteristics CAPACITANCE (pF) VVFF - FORWARD VOLTAGE (mV) 1.3 Ta= -40C 600 Ta= 25C 400 Ta= +80C 1.2 1.1 1 0.9 200 0.8 0.001 0.003 0.01 0.03 0.1 0.3 1 I F - FORWARD CURRENT (mA) 3 10 Figure 7. Forward Voltage vs. Ambient Temperature VF - 1.0 A - 10 mA (- 40 to +80C) 500 50 40 30 20 0 IF = IR = 30 mA Rloop = 100 Ohms 1 1.5 2 2.5 Irr - REVERSE RECOVERY CURRENT (mA) 2 4 6 8 10 REVERSE VOLTAGE (V) 12 14 15 Figure 8. Capacitance vs. Reverse Voltage I - CURRENT (mA) REVERSE RECOVERY (nS) Ta= 25C 800 400 300 -F OR WA RD CU RR EN TS TE AD Y Io - A ST VER AT AGE E REC -m TIFIE D CU A RRE NT mA 200 100 0 3 IR 0 50 100 150 o TA - AMBIENT TEMPERATURE ( C) Figure 10. Average Rectified Current(IO) and Forward Current (IF) vs. Ambient Temperature(TA) Figure 9. Reverse Recovery Time vs. Reverse Recovery Current (Irr) PD - POWER DISSIPATION (mW) 500 400 DO-35 Pkg 300 SOT-23 Pkg 200 100 0 0 50 100 150 IO - AVERAGE TEMPERATURE ( oC) 200 Figure 11. Power Derating Curve (c) 2002 Fairchild Semiconductor Corporation MMBD1401 / MMBD1403 / MMBD1404 / MMBD1405 Rev. 1.1.0 www.fairchildsemi.com 4 MMBD1401 / MMBD1403 / MMBD1404 / MMBD1405 -- Small Signal Diodes Typical Performance Characteristics (Continued) ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor's product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. "Typical" parameters which may be provided in ON Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including "Typicals" must be validated for each customer application by customer's technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. 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