KSD-T0C003-001 2
Absolute Maximum Ratings (Ta=25°C)
Characteristic Symbol Rating Unit
Collector-base voltage VCBO 50 V
Collector-emitter voltage VCEO 40 V
Emitter-base voltage VEBO 5 V
Collector current IC 150 mA
Collector power dissipation PC 400 mW
Junction temperature TJ 150
°C
Storage temperature range Tstg -55~150
°C
Electrical Characteristics (Ta=25°C)
Characteristic Symbol Test Condition Min. Typ. Max. Unit
Collector-emitter breakdown voltage BVCEO I
C=1mA, IB=0 40 - - V
Collector cut-off current ICBO V
CB=50V, IE=0 - - 0.1
µA
Emitter cut-off current IEBO V
EB=5V, IC=0 - - 0.1
µA
DC current gain hFE
* VCE=6V, IC=2mA 70 - 700 -
Collector-emitter saturation voltage VCE(sat) I
C=100mA, IB=10mA - - 0.25 V
Base-emitter voltage VBE V
CE=6V, IC=2mA - 0.67 0.9 V
Transition frequency fT V
CE=10V, IC=10mA - 200 - MHz
Collector output capacitance Cob V
CB=10V, IE=0, f=1MHz - 2 - pF
* : hFE rank / O : 70 ~ 140, Y : 120 ~ 240, G : 200 ~ 400, L : 300 ~ 700
STC945N