BAT54T1 Preferred Device Schottky Barrier Diodes These Schottky barrier diodes are designed for high speed switching applications, circuit protection, and voltage clamping. Extremely low forward voltage reduces conduction loss. Miniature surface mount package is excellent for hand held and portable applications where space is limited. * Extremely Fast Switching Speed * Low Forward Voltage - 0.35 Volts (Typ) @ IF = 10 mAdc http://onsemi.com 30 VOLT SCHOTTKY BARRIER DETECTOR AND SWITCHING DIODES 1 CATHODE 2 ANODE MARKING DIAGRAM 2 AA AA AA SB 1 1 SOD-123 CASE 425 STYLE 1 MAXIMUM RATINGS (TJ = 125C unless otherwise noted) Rating Symbol Value Unit Reverse Voltage VR 30 Volts Forward Power Dissipation, FR-5 Board (Note 1) @ TA = 25C Derate above 25C PF mW mW/C Thermal Resistance, Junction to Case RJL 174 C/W Thermal Resistance, Junction to Ambient RJA 492 C/W Forward Current (DC) IF 200 Max mA Non-Repetitive Peak Forward Current tp < 10 msec IFSM 600 mA Repetitive Peak Forward Current Pulse Wave = 1 sec, Duty Cycle = 66% IFRM 300 mA TJ 125 Max C Tstg -55 to +150 C Junction Temperature Storage Temperature Range 1. FR-5 = 1.0 x 0.75 x 0.062 in. Semiconductor Components Industries, LLC, 2002 May, 2002 - Rev. 7 ORDERING INFORMATION Device 400 3.2 1 2 BAT54T1 Package Shipping SOD-123 3000/Tape & Reel Preferred devices are recommended choices for future use and best overall value. Publication Order Number: BAT54T1/D BAT54T1 ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted) Characteristic Symbol Min Typ Max Unit V(BR)R 30 - - Volts Total Capacitance (VR = 1.0 V, f = 1.0 MHz) CT - 7.6 10 pF Reverse Leakage (VR = 25 V) IR - 0.5 2.0 Adc Forward Voltage (IF = 0.1 mAdc) VF - 0.22 0.24 Vdc Forward Voltage (IF = 30 mAdc) VF - 0.41 0.5 Vdc Forward Voltage (IF = 100 mAdc) VF - 0.52 0.8 Vdc Reverse Recovery Time (IF = IR = 10 mAdc, IR(REC) = 1.0 mAdc, Figure 1) trr - - 5.0 ns Forward Voltage (IF = 1.0 mAdc) VF - 0.29 0.32 Vdc Forward Voltage (IF = 10 mAdc) VF - 0.35 0.40 Vdc Forward Current (DC) IF - - 200 mAdc Repetitive Peak Forward Current IFRM - - 300 mAdc Non-Repetitive Peak Forward Current (t < 1.0 s) IFSM - - 600 mAdc Reverse Breakdown Voltage (IR = 10 A) http://onsemi.com 2 BAT54T1 820 +10 V 2k 100 H 0.1 F IF tr tp IF t 10% 0.1 F trr t DUT 50 Output Pulse Generator 90% 50 Input Sampling Oscilloscope iR(REC) = 1 mA IR VR OUTPUT PULSE (IF = IR = 10 mA; measured at iR(REC) = 1 mA) INPUT SIGNAL Notes: 1. A 2.0 k variable resistor adjusted for a Forward Current (IF) of 10 mA. Notes: 2. Input pulse is adjusted so IR(peak) is equal to 10 mA. Notes: 3. tp trr Figure 1. Recovery Time Equivalent Test Circuit 100 1000 TA = 150C IR, REVERSE CURRENT (A) 85C 10 150C 1.0 25C 0.1 0.0 -40C -55C 100 TA = 125C 10 1.0 TA = 85C 0.1 0.01 TA = 25C 0.001 0.2 0.3 0.4 0.1 0.5 VF, FORWARD VOLTAGE (VOLTS) 0 0.6 5 15 25 10 20 VR, REVERSE VOLTAGE (VOLTS) Figure 2. Forward Voltage Figure 3. Leakage Current 14 CT, TOTAL CAPACITANCE (pF) IF, FORWARD CURRENT (mA) 125C 12 10 8 6 4 2 0 0 5 10 15 20 VR, REVERSE VOLTAGE (VOLTS) Figure 4. Total Capacitance http://onsemi.com 3 25 30 30 BAT54T1 INFORMATION FOR USING THE SOD-123 SURFACE MOUNT PACKAGE MINIMUM RECOMMENDED FOOTPRINT FOR SURFACE MOUNTED APPLICATIONS Surface mount board layout is a critical portion of the total design. The footprint for the semiconductor packages must be the correct size to insure proper solder connection interface between the board and the package. With the correct pad geometry, the packages will self align when subjected to a solder reflow process. 0.91 0.036 EEE EEE EEE EEE EEE EEE EEE EEE 2.36 0.093 4.19 0.165 1.22 0.048 mm inches SOD-123 SOD-123 POWER DISSIPATION SOLDERING PRECAUTIONS The power dissipation of the SOD-123 is a function of the pad size. This can vary from the minimum pad size for soldering to a pad size given for maximum power dissipation. Power dissipation for a surface mount device is determined by TJ(max), the maximum rated junction temperature of the die, RJA, the thermal resistance from the device junction to ambient, and the operating temperature, TA. Using the values provided on the data sheet for the SOD-123 package, PD can be calculated as follows: PD = The melting temperature of solder is higher than the rated temperature of the device. When the entire device is heated to a high temperature, failure to complete soldering within a short time could result in device failure. Therefore, the following items should always be observed in order to minimize the thermal stress to which the devices are subjected. * Always preheat the device. * The delta temperature between the preheat and soldering should be 100C or less.* * When preheating and soldering, the temperature of the leads and the case must not exceed the maximum temperature ratings as shown on the data sheet. When using infrared heating with the reflow soldering method, the difference shall be a maximum of 10C. * The soldering temperature and time shall not exceed 260C for more than 10 seconds. * When shifting from preheating to soldering, the maximum temperature gradient shall be 5C or less. * After soldering has been completed, the device should be allowed to cool naturally for at least three minutes. Gradual cooling should be used as the use of forced cooling will increase the temperature gradient and result in latent failure due to mechanical stress. * Mechanical stress or shock should not be applied during cooling. TJ(max) - TA RJA The values for the equation are found in the maximum ratings table on the data sheet. Substituting these values into the equation for an ambient temperature TA of 25C, one can calculate the power dissipation of the device which in this case is 225 milliwatts. PD = 150C - 25C 556C/W = 225 milliwatts The 556C/W for the SOD-123 package assumes the use of the recommended footprint on a glass epoxy printed circuit board to achieve a power dissipation of 225 milliwatts. There are other alternatives to achieving higher power dissipation from the SOD-123 package. Another alternative would be to use a ceramic substrate or an aluminum core board such as Thermal Clad. Using a board material such as Thermal Clad, an aluminum core board, the power dissipation can be doubled using the same footprint. * Soldering a device without preheating can cause excessive thermal shock and stress which can result in damage to the device. http://onsemi.com 4 BAT54T1 PACKAGE DIMENSIONS (SC-70) SOD-123 PLASTIC PACKAGE CASE 425-04 ISSUE C A AAAA AAAA C NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. H 1 K B E 2 D J http://onsemi.com 5 DIM A B C D E H J K INCHES MIN MAX 0.055 0.071 0.100 0.112 0.037 0.053 0.020 0.028 0.01 --0.000 0.004 --0.006 0.140 0.152 STYLE 1: PIN 1. CATHODE 2. ANODE MILLIMETERS MIN MAX 1.40 1.80 2.55 2.85 0.95 1.35 0.50 0.70 0.25 --0.00 0.10 --0.15 3.55 3.85 BAT54T1 Notes http://onsemi.com 6 BAT54T1 Notes http://onsemi.com 7 BAT54T1 Thermal Clad is a trademark of the Bergquist Company. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. "Typical" parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including "Typicals" must be validated for each customer application by customer's technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. 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