TXN/TYN 058 (G) --->
TXN/TYN 1008 (G)
April 1995
SCR
Symbol Parameter Value Unit
IT(RMS) RMS on-state current
(180°conduction angle) TXN
TYN Tc=100°C
Tc=105°C8A
I
T(AV) Average on-state current
(180°conduction angle,single phase circuit) TXN
TYN Tc=100°C
Tc=105°C5A
I
TSM Non repetitive surge peak on-state current
( Tj initial = 25°C) tp=8.3 ms 84 A
tp=10 ms 80
I2tI
2
t value tp=10 ms 32 A2s
dI/dt Critical rate of rise of on-state current
Gate supply : IG= 100 mA diG/dt = 1 A/µs50 A/µs
Tstg
Tj Storage and operating junction temperature range - 40 to + 150
- 40 to + 125 °C
°C
Tl Maximum lead temperature for soldering during 10 s at 4.5 mm
from case 260 °C
TO220AB
(Plastic)
KAG
.HIGH SURGE CAPABILITY
.HIGH ON-STATE CURRENT
.HIGH STABILITYAND RELIABILITY
.TXNSerie :
INSULATED VOLTAGE=2500V(RMS)
(ULRECOGNIZED : E81734)
DESCRIPTION
Symbol Parameter TYN/TXN Unit
058 108 208 408 608 808 1008
VDRM
VRRM Repetitive peak off-state voltage
Tj = 125 °C50 100 200 400 600 800 1000 V
ABSOLUTE RATINGS (limiting values)
FEATURES
The TYN/TXN 058 ---> TYN/TXN 1008 Family of
Silicon ControlledRectifiers usesa high performance
glass passivated chips technology.
This general purpose Family of Silicon Controlled
Rectifiers is designed for power supplies up to
400Hz on resistive or inductive load.
1/5
GATE CHARACTERISTICS (maximum values)
Symbol Parameter Value Unit
Rth (j-a) Junction to ambient 60 °C/W
Rth (j-c) DC Junction to case for DC TXN 3.5 °C/W
TYN 2.5
Symbol Test Conditions Value Unit
BLANK G
IGT VD=12V (DC) RL=33ΩTj=25°C MAX 15 25 mA
VGT VD=12V (DC) RL=33ΩTj=25°C MAX 1.5 V
VGD VD=VDRM RL=3.3kΩTj= 110°C MIN 0.2 V
tgt VD=VDRM IG= 40mA
dIG/dt = 0.5A/µsTj=25°C TYP 2 µs
ILIG= 1.2 IGT Tj=25°C TYP 50 mA
IHIT= 100mA gate open Tj=25°C MAX 30 45 mA
VTM ITM= 16A tp= 380µs Tj=25°C MAX 1.8 V
IDRM
IRRM VDRM Rated
VRRM Rated Tj=25°C MAX 0.01 mA
Tj= 110°C2
dV/dt Linear slope up to VD=67%VDRM
gate open Tj= 110°C MIN 200 500 V/µs
tq VD=67%VDRM ITM= 16A VR= 25V
dITM/dt=30 A/µsdV
D
/dt= 50V/µsTj= 110°C TYP 70 µs
PG (AV) =1W P
GM = 10W (tp = 20 µs) IFGM = 4A (tp = 20 µs) VRGM =5V.
ELECTRICAL CHARACTERISTICS
THERMAL RESISTANCES
TXN/TYN 058 (G) ---> TXN/TYN 1008 (G)
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Package IT(RMS) VDRM /V
RRM Sensitivity Specification
A V BLANK G
TXN
(Insulated) 850XX
100 X X
200 X X
400 X X
600 X X
800 X X
1000 X X
TYN
(Uninsulated) 50 X X
100 X X
200 X X
400 X X
600 X X
800 X X
1000 X X
012345678
0
2
4
6
8
10 P (W)
360 O
= 180o
= 120o
=90
o
=60
o
=30
o
DC
I (A)
T(AV)
Fig.3 : Maximum average power dissipation versus
average on-state current (TYN).
0 20 40 60 80 100 120 140
0
2
4
6
8
10
-105
-100
-115
-110
-120
-125
P (W) Tcase ( C)
o
Rth = 0 C/W
2.5 C/W
5C/W
10 C/W
o
o
o
o
= 180o
Tamb ( C)
o
Fig.4 : Correlation between maximum average power
dissipation and maximum allowable temperatures (Tamb
and Tcase) for different thermal resistances heatsink +
contact (TYN).
01234567
0
1
2
3
4
5
6
7
8
P(W)
360 O
= 180o
= 120o
=90
o
=60
o
=30
o
DC
I (A)
T(AV)
Fig.1 : Maximum average power dissipation versus
average on-state current (TXN).
0 20 40 60 80 100 120 140
0
1
2
3
4
5
6
7
8
-105
-100
-115
-110
-120
-125
P (W) Tcase ( C)
o
= 180o
Tamb ( C)
o
Rth = 0 C/W
2.5 C/W
5C/W
10 C/W
o
o
o
o
Fig.2 : Correlation between maximum average power
dissipation and maximum allowable temperatures (Tamb
and Tcase) for different thermal resistances heatsink +
contact (TXN).
TXN/TYN 058 (G) ---> TXN/TYN 1008 (G)
3/5
Fig.9 : Non repetitive surge peak on-state current
versus number of cycles. Fig.10 : Non repetitive surge peak on-state current for
a sinusoidal pulse with width : t ≤10 ms, and
corresponding value of I2t.
0 102030405060708090100110120130
0
2
4
6
8
10 I (A)
T(AV)
= 180o
DC
Tcase ( C)
o
Fig.5 : Average on-state current versus case
temperature (TXN).
Fig.8 : Relative variation of gate trigger current versus
junction temperature.
1E-3 1E-2 1E-1 1E+0 1E+1 1E+2 5E+2
0.01
0.1
1Zth/Rth
Zth(j-c)
Zth(j-a)
tp(s)
Fig.7 : Relative variation of thermal impedance versus
pulse duration.
0 102030405060708090100110120130
0
2
4
6
8
10 I (A)
T(AV)
= 180o
DC
Tcase ( C)
o
Fig.6 : Average on-state current versus case
temperature (TYN).
TXN/TYN 058 (G) ---> TXN/TYN 1008 (G)
4/5
PACKAGE MECHANICAL DATA
TO220AB Plastic
Cooling method : C
Marking : type number
Weight : 2.3 g
Recommended torque value : 0.8 m.N.
Maximum torque value : 1 m.N.
Fig.11 : On-state characteristics (maximum values).
A
GJH
D
B
C
M
L
F
O
P
=N=
I
REF. DIMENSIONS
Millimeters Inches
Min. Max. Min. Max.
A 10.00 10.40 0.393 0.409
B 15.20 15.90 0.598 0.625
C 13.00 14.00 0.511 0.551
D 6.20 6.60 0.244 0.259
F 3.50 4.20 0.137 0.165
G 2.65 2.95 0.104 0.116
H 4.40 4.60 0.173 0.181
I 3.75 3.85 0.147 0.151
J 1.23 1.32 0.048 0.051
L 0.49 0.70 0.019 0.027
M 2.40 2.72 0.094 0.107
N 4.80 5.40 0.188 0.212
O 1.14 1.70 0.044 0.066
P 0.61 0.88 0.024 0.034
Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability
for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may
result from its use. No license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Micro-
electronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and
replaces all information previously supplied.
SGS-THOMSON Microelectronics products are not authorized for use as critical components in life support devices or systems
without express written approval of SGS-THOMSON Microelectronics.
1995 SGS-THOMSON Microelectronics - Printed in Italy - All rights reserved.
SGS-THOMSON Microelectronics GROUP OF COMPANIES
Australia - Brazil - France - Germany - Hong Kong - Italy - Japan - Korea - Malaysia - Malta - Morocco - The Nether-
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TXN/TYN 058 (G) ---> TXN/TYN 1008 (G)
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