LM833 Low Noise, Audio Dual Operational Amplifier The LM833 is a standard low-cost monolithic dual general-purpose operational amplifier employing Bipolar technology with innovative high-performance concepts for audio systems applications. With high frequency PNP transistors, the LM833 offers low voltage noise (4.5 nV/ Hz ), 15 MHz gain bandwidth product, 7.0 V/s slew rate, 0.3 mV input offset voltage with 2.0 V/C temperature coefficient of input offset voltage. The LM833 output stage exhibits no deadband crossover distortion, large output voltage swing, excellent phase and gain margins, low open loop high frequency output impedance and symmetrical source/sink AC frequency response. For an improved performance dual/quad version, see the MC33079 family. * Low Voltage Noise: 4.5 nV/ Hz * High Gain Bandwidth Product: 15 MHz * High Slew Rate: 7.0 V/s * Low Input Offset Voltage: 0.3 mV * Low T.C. of Input Offset Voltage: 2.0 V/C * Low Distortion: 0.002% * Excellent Frequency Stability * Dual Supply Operation http://onsemi.com MARKING DIAGRAMS 8 PDIP-8 N SUFFIX CASE 626 8 1 LM833N AWL YYWW 1 8 SO-8 D SUFFIX CASE 751 8 1 LM833 ALYW 1 A WL, L YY, Y WW, W = Assembly Location = Wafer Lot = Year = Work Week MAXIMUM RATINGS Rating Symbol Value Unit VS +36 V Input Differential Voltage Range (Note 1) VIDR 30 V Input Voltage Range (Note 1) VIR 15 V Output Short Circuit Duration (Note 2) tSC Indefinite Operating Ambient Temperature Range TA -40 to +85 Operating Junction Temperature TJ +150 Storage Temperature Tstg -60 to +150 C Maximum Power Dissipation (Notes 2 and 3) PD 500 mW Supply Voltage (VCC to VEE) C January, 2002 - Rev. 2 Output 1 1 2 1 8 VCC 7 Output 2 Inputs 1 3 6 Inputs 2 2 C 1. Either or both input voltages must not exceed the magnitude of VCC or VEE. 2. Power dissipation must be considered to ensure maximum junction temperature (TJ) is not exceeded (see power dissipation performance characteristic). 3. Maximum value at TA 85C. Semiconductor Components Industries, LLC, 2002 PIN CONNECTIONS 1 VEE 4 5 (Top View) ORDERING INFORMATION Device Package Shipping LM833N PDIP-8 50 Units/Rail LM833D SO-8 98 Units/Rail LM833DR2 SO-8 2500 Tape & Reel Publication Order Number: LM833/D LM833 ELECTRICAL CHARACTERISTICS (VCC = +15 V, VEE = -15 V, TA = 25C, unless otherwise noted.) Characteristic Symbol Min Typ Max Unit VIO - 0.3 5.0 mV VIO/T - 2.0 - V/C Input Offset Current (VCM = 0 V, VO = 0 V) IIO - 10 200 nA Input Bias Current (VCM = 0 V, VO = 0 V) IIB - 300 1000 nA Common Mode Input Voltage Range VICR - -12 +14 -14 +12 - V Large Signal Voltage Gain (RL = 2.0 k, VO = 10 V AVOL 90 110 - dB Output Voltage Swing: RL = 2.0 k, VID = 1.0 V RL = 2.0 k, VID = 1.0 V RL = 10 k, VID = 1.0 V RL = 10 k, VID = 1.0 V VO+ VO- VO+ VO- 10 - 12 - 13.7 -14.1 13.9 -14.7 - -10 - -12 Common Mode Rejection (Vin = 12 V) CMR 80 100 - dB Power Supply Rejection (VS = 15 V to 5.0 V, -15 V to -5.0 V) PSR 80 115 - dB ID - 4.0 8.0 mA Unit Input Offset Voltage (RS = 10 , VO = 0 V) Average Temperature Coefficient of Input Offset Voltage RS = 10 , VO = 0 V, TA = Tlow to Thigh V Power Supply Current (VO = 0 V, Both Amplifiers) AC ELECTRICAL CHARACTERISTICS (VCC = +15 V, VEE = -15 V, TA = 25C, unless otherwise noted.) Characteristic Symbol Min Typ Max Slew Rate (Vin = -10 V to +10 V, RL = 2.0 k, AV = +1.0) SR 5.0 7.0 - V/s GBW 10 15 - MHz Unity Gain Frequency (Open Loop) fU - 9.0 - MHz Unity Gain Phase Margin (Open Loop) m - 60 - Deg Equivalent Input Noise Voltage (RS = 100 , f = 1.0 kHz) en - 4.5 - nV Hz Equivalent Input Noise Current (f = 1.0 kHz) in - 0.5 - pA Hz Power Bandwidth (VO = 27 Vpp, RL = 2.0 k, THD 1.0%) BWP - 120 - kHz Distortion (RL = 2.0 k, f = 20 Hz to 20 kHz, VO = 3.0 Vrms, AV = +1.0) THD - 0.002 - % CS - -120 - dB Gain Bandwidth Product (f = 100 kHz) 1000 800 IIB , INPUT BIAS CURRENT (nA) PD , MAXIMUM POWER DISSIPATION (mW) Channel Separation (f = 20 Hz to 20 kHz) 600 400 200 0 -50 0 50 100 TA, AMBIENT TEMPERATURE (C) VCC = +15 V VEE = -15 V VCM = 0 V 800 600 400 200 0 -55 150 Figure 1. Maximum Power Dissipation versus Temperature -25 0 25 50 75 TA, AMBIENT TEMPERATURE (C) 100 125 Figure 2. Input Bias Current versus Temperature http://onsemi.com 2 LM833 10 TA = 25C 600 IS , SUPPLY CURRENT (mA) I IB , INPUT BIAS CURRENT (nA) 800 400 200 0 5.0 10 15 VCC, |VEE|, SUPPLY VOLTAGE (V) VCC 8.0 6.0 VO + VEE 4.0 2.0 0 20 0 5.0 Figure 3. Input Bias Current versus Supply Voltage RL = 2.0 k TA = 25C 100 100 95 90 -55 -25 0 25 50 75 TA, AMBIENT TEMPERATURE (C) 100 90 80 5.0 125 0 100 45 80 Phase 60 20 0 VCC = +15 V VEE = -15 V RL = 2.0 k TA = 25C 1.0 10 Gain 100 1.0 k 10 k 100 k f, FREQUENCY (Hz) 90 135 1.0 M 180 10 M GBW, GAIN BANDWIDTH PRODUCT (MHz) 120 10 15 VCC, |VEE|, SUPPLY VOLTAGE (V) 20 Figure 6. DC Voltage Gain versus Supply Voltage , EXCESS PHASE (DEGREES) AVOL, OPEN LOOP VOLTAGE GAIN (dB) Figure 5. DC Voltage Gain versus Temperature 40 20 110 VCC = +15 V VEE = -15 V RL = 2.0 k 105 10 15 VCC, |VEE|, SUPPLY VOLTAGE (V) Figure 4. Supply Current versus Supply Voltage AVOL, DC VOLTAGE GAIN (dB) AVOL, DC VOLTAGE GAIN (dB) 110 RL = TA = 25C IS 20 15 10 5.0 0 -55 Figure 7. Open Loop Voltage Gain and Phase versus Frequency VCC = +15 V VEE = -15 V f = 100 kHz -25 0 25 50 75 TA, AMBIENT TEMPERATURE (C) 100 Figure 8. Gain Bandwidth Product versus Temperature http://onsemi.com 3 125 LM833 GBW, GAIN BANDWIDTH PRODUCT (MHz) 30 10 SR, SLEW RATE (V/ s) f = 100 kHz TA = 25C 20 10 0 5.0 10 15 VCC, |VEE|, SUPPLY VOLTAGE (V) 8.0 Falling Rising 6.0 VCC = +15 V VEE = -15 V RL = 2.0 k AV = +1.0 4.0 2.0 -55 20 Figure 9. Gain Bandwidth Product versus Supply Voltage SR, SLEW RATE (V/ s) 8.0 RL = 2.0k AV = +1.0 TA = 25C Falling 4.0 Vin 2.0 0 5.0 + - VO RL 10 15 VCC, |VEE|, SUPPLY VOLTAGE (V) 20 VCC = +15 V VEE = -15 V RL = 2.0 k THD 1.0% TA = 25C 15 10 5.0 10 VO + 5.0 0 -5.0 VO - -15 -20 5.0 10 15 VCC, |VEE|, SUPPLY VOLTAGE (V) 100 1.0 k 10 k 1.0 M f, FREQUENCY (Hz) 10 M 100 k Figure 12. Output Voltage versus Frequency 10 -10 125 25 0 20 V sat , OUTPUT SATURATION VOLTAGE |V| VO, OUTPUT VOLTAGE (Vpp ) 15 RL = 10 k TA = 25C 100 30 Figure 11. Slew Rate versus Supply Voltage 20 0 25 50 75 TA, AMBIENT TEMPERATURE (C) VO RL 35 Rising 6.0 + Figure 10. Slew Rate versus Temperature VO, OUTPUT VOLTAGE (Vpp ) 10 -25 Vin 20 15 +Vsat -Vsat 14 VCC = +15 V VEE = -15 V RL = 10 k 13 -55 Figure 13. Maximum Output Voltage versus Supply Voltage -25 0 25 50 75 TA, AMBIENT TEMPERATURE (C) 100 Figure 14. Output Saturation Voltage versus Temperature http://onsemi.com 4 125 PSR, POWER SUPPLY REJECTION (dB) 140 VCC = +15 V VEE = -15 V TA = 25C 120 100 80 -PSR 20 +PSR = 20 Log -PSR = 20 Log 0 100 VCC ADM + VO VEE +PSR 60 40 - CMR, COMMON MODE REJECTION (dB) LM833 1.0 k VO/ADM ( VCC ) ( VVO/AEEDM ) 10 k 100 k f, FREQUENCY (Hz) 1.0 M 160 140 120 10 M RL 0.01 0.001 10 e n, INPUT NOISE VOLTAGE (nV/ Hz ) THD, TOTAL HARMONIC DISTORTION (%) 0.1 VCC = +15 V VEE = -15 V RL = 2.0 k TA = 25C VO VO = 1.0 Vrms VO = 3.0 Vrms 100 1.0 k + 80 60 40 20 100 VCC = +15 V VEE = -15 V VCM = 0 V VCM = 1.5 V TA = 25C 1.0 k 10 k VCC = +15 V VEE = -15 V RS = 100 TA = 25C 2.0 100 e n, INPUT NOISE VOLTAGE (nV/ Hz ) i n , INPUT NOISE CURRENT (pA/ Hz ) 10 M 100 0.7 0.5 0.4 0.3 10 k 1.0 k f, FREQUENCY (Hz) 10 k 100 k Figure 18. Input Referred Noise Voltage versus Frequency 1.0 1.0 k f, FREQUENCY (Hz) 1.0 M 5.0 1.0 10 100 k VCC = +15 V VEE = -15 V TA = 25C 100 10 k 100 k f, FREQUENCY (Hz) 10 Figure 17. Total Harmonic Distortion versus Frequency 0.2 10 VCM x ADM V0 CMR = 20 Log f, FREQUENCY (Hz) 2.0 VO Figure 16. Common Mode Rejection versus Frequency 1.0 - - ADM 100 Figure 15. Power Supply Rejection versus Frequency + VCM 100 k VCC = +15 V VEE = -15 V Vn(total) = (inRS)2 +en2 + 4KTRS TA = 25C 10 1.0 1.0 10 100 1.0 k 10 k 100 k RS, SOURCE RESISTANCE () Figure 19. Input Referred Noise Current versus Frequency Figure 20. Input Referred Noise Voltage versus Source Resistance http://onsemi.com 5 1.0 M VO , OUTPUT VOLTAGE (5.0 V/DIV) VCC = +15 V VEE = -15 V RL = 2.0 k CL = 0 pF AV = -1.0 TA = 25C VCC = +15 V VEE = -15 V RL = 2.0 k CL = 0 pF AV = +1.0 TA = 25C t, TIME (2.0 s/DIV) t, TIME (2.0 s/DIV) Figure 21. Inverting Amplifier VO , OUTPUT VOLTAGE (10 mV/DIV) VO , OUTPUT VOLTAGE (5.0 V/DIV) LM833 Figure 22. Noninverting Amplifier Slew Rate VCC = +15 V VEE = -15 V RL = 2.0 k CL = 0 pF AV = +1.0 TA = 25C t, TIME (200 ns/DIV) Figure 23. Noninverting Amplifier Overshoot http://onsemi.com 6 LM833 PACKAGE DIMENSIONS PDIP-8 N SUFFIX CASE 626-05 ISSUE L 8 NOTES: 1. DIMENSION L TO CENTER OF LEAD WHEN FORMED PARALLEL. 2. PACKAGE CONTOUR OPTIONAL (ROUND OR SQUARE CORNERS). 3. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 5 -B- 1 4 DIM A B C D F G H J K L M N F -A- NOTE 2 L C J -T- MILLIMETERS MIN MAX 9.40 10.16 6.10 6.60 3.94 4.45 0.38 0.51 1.02 1.78 2.54 BSC 0.76 1.27 0.20 0.30 2.92 3.43 7.62 BSC --10 0.76 1.01 INCHES MIN MAX 0.370 0.400 0.240 0.260 0.155 0.175 0.015 0.020 0.040 0.070 0.100 BSC 0.030 0.050 0.008 0.012 0.115 0.135 0.300 BSC --10 0.030 0.040 N SEATING PLANE D M K G H 0.13 (0.005) M T A M B M SO-8 D SUFFIX CASE 751-07 ISSUE W -X- NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: MILLIMETER. 3. DIMENSION A AND B DO NOT INCLUDE MOLD PROTRUSION. 4. MAXIMUM MOLD PROTRUSION 0.15 (0.006) PER SIDE. 5. DIMENSION D DOES NOT INCLUDE DAMBAR PROTRUSION. ALLOWABLE DAMBAR PROTRUSION SHALL BE 0.127 (0.005) TOTAL IN EXCESS OF THE D DIMENSION AT MAXIMUM MATERIAL CONDITION. A 8 5 0.25 (0.010) S B 1 M Y M 4 K -Y- G C N X 45 SEATING PLANE -Z- 0.10 (0.004) H M D 0.25 (0.010) M Z Y S X S http://onsemi.com 7 J DIM A B C D G H J K M N S MILLIMETERS MIN MAX 4.80 5.00 3.80 4.00 1.35 1.75 0.33 0.51 1.27 BSC 0.10 0.25 0.19 0.25 0.40 1.27 0 8 0.25 0.50 5.80 6.20 INCHES MIN MAX 0.189 0.197 0.150 0.157 0.053 0.069 0.013 0.020 0.050 BSC 0.004 0.010 0.007 0.010 0.016 0.050 0 8 0.010 0.020 0.228 0.244 LM833 ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. 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