BZX884-B11,315 - NXP Semiconductors / Philips Semiconductors

DATA SH EET

Product data sheet

Supersedes data of 2003 May 15 2004 Mar 26

DISCRETE SEMICONDUCTORS

BZX884 series

Voltage regulator diodes

M3D891

BOTTOM VIEW

2004 Mar 26 2

NXP Semiconductors Product data sheet

Voltage regulator diodes BZX884 series

FEATURES

•Two tolerance series: ±2% and ±5%

•Working voltage range: nominal 2.4 V to 75 V

(E24 range)

•Leadless ultra small plastic package

(1 mm × 0.6 mm × 0.5 mm)

•Boardspace 1.17 mm2 (approximately 10% of SOT23)

•Power dissipation comparable to SOT23.

APPLICATIONS

•General regulation functions

•ESD ultra high-spe ed switching

•High frequency applications

•Mobile communication, digital (still) cameras, PDAs and

PCMCIA cards.

DESCRIPTION

Low-power voltage regulator diodes encapsulated in

SOD882 leadless ultra small plastic packages.

handbook, halfpage

MAM472Bottom view

Fig.1 Simplified outline (SOD882) and symbol.

The marking bar indicates the cathode.

MARKING

TYPE

NUMBER MARKING

CODE TYPE

NUMBER MARKING

CODE TYPE

NUMBER MARKING

CODE TYPE

NUMBER MARKING

CODE

Marking codes for BZX884-B2V4 to BZX884-B75

BZX884-B2V4 A1 BZX884-B6V2 AB BZX884-B16 C1 BZX884-B43 CB

BZX884-B2V7 A2 BZX884-B6V8 AC BZX884-B18 C2 BZX884-B47 CC

BZX884-B3V0 A3 BZX884-B7V5 AD BZX884-B20 C3 BZX884-B51 CD

BZX884-B3V3 A4 BZX884-B8V2 AE BZX884-B22 C4 BZX884-B56 CE

BZX884-B3V6 A5 BZX884-B9V1 AF BZX884-B24 C5 BZX884-B62 CF

BZX884-B3V9 A6 BZX884-B10 AG BZX884-B27 C6 BZX884-B68 CG

BZX884-B4V3 A7 BZX884-B11 AH BZX884-B30 C7 BZX884-B75 CH

BZX884-B4V7 A8 BZX884-B12 AJ BZX884-B33 C8

BZX884-B5V1 A9 BZX884-B13 AK BZX884-B36 C9

BZX884-B5V6 AA BZX884-B15 AL BZX884-B39 CA

Marking codes for BZX884-C2V4 to BZX884-C75

BZX884-C2V4 B1 BZX884-C6V2 BB BZX884-C16 D1 BZX884-C43 DB

BZX884-C2V7 B2 BZX884-C6V8 BC BZX884-C18 D2 BZX884-C47 DC

BZX884-C3V0 B3 BZX884-C7V5 BD BZX884-C20 D3 BZX884-C51 DD

BZX884-C3V3 B4 BZX884-C8V2 BE BZX884-C22 D4 BZX884-C56 DE

BZX884-C3V6 B5 BZX884-C9V1 BF BZX884-C24 D5 BZX884-C62 DF

BZX884-C3V9 B6 BZX884-C10 BG BZX884-C27 D6 BZX884-C68 DG

BZX884-C4V3 B7 BZX884-C11 BH BZX884-C30 D7 BZX884-C75 DH

BZX884-C4V7 B8 BZX884-C12 BJ BZX884-C33 D8

BZX884-C5V1 B9 BZX884-C13 BK BZX884-C36 D9

BZX884-C5V6 BA BZX884-C15 BL BZX884-C39 DA

2004 Mar 26 3

NXP Semiconductors Pr oduct data sheet

Voltage regulator diodes BZX884 series

ORDERING INFORMATION

LIMITING VALUES

In accordance with th e Absolute Maximum Ratin g System (IEC 60134).

Note

1. Refer to SOD882 st an da rd mounting conditions (footp rint), FR4 with 60 μm copper strip line.

THERMAL CHARACTE RISTICS

Note

1. Refer to SOD882 st an da rd mounting conditions (footp rint), FR4 with 60 μm copper strip line.

TYPE

NUMBER PACKAGE

NAME DESCRIPTION VERSION

BZX884-B2V4

BZX884-B75

−Leadless ultra small plastic package;2 terminals; body 1.0 x

0.6 x 0.5 mm SOD882

BZX884-C2V4

BZX884-C75

−Leadless ultra small plastic package;2 terminals; body 1.0 x

0.6 x 0.5 mm SOD882

SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT

IFcontinuous forward current −200 mA

IZSM non-repe titiv e pe ak reverse

current tp = 100 μs; square wave;

Tamb = 25 °C; prior to surge see Tables 1 and

Ptot total power dissipation Tamb = 25 °C; note 1 −250 mW

Tstg storage temperature −65 +150 °C

Tjjunction temperature −150 °C

SYMBOL PARAMETER CONDITIONS VALUE UNIT

Rth(j-a) thermal resistance from junction to ambient note 1 500 K/W

2004 Mar 26 4

NXP Semiconductors Pr oduct data sheet

Voltage regulator diodes BZX884 series

ELECTRICAL CHARACTERISTIC S

Tj = 25 °C unless otherwise specified.

SYMBOL PARAMETER CONDITIONS MAX. UNIT

VFforward voltage IF = 10 mA; see Fig.2 0.9 V

IRreverse current

BZX884-B/C2V4 VR = 1 V 50 μA

BZX884-B/C2V7 VR = 1 V 20 μA

BZX884-B/C3V0 VR = 1 V 10 μA

BZX884-B/C3V3 VR = 1 V 5 μA

BZX884-B/C3V6 VR = 1 V 5 μA

BZX884-B/C3V9 VR = 1 V 3 μA

BZX884-B/C4V3 VR = 1 V 3 μA

BZX884-B/C4V7 VR = 2 V 3 μA

BZX884-B/C5V1 VR = 2 V 2 μA

BZX884-B/C5V6 VR = 2 V 1 μA

BZX884-B/C6V2 VR = 4 V 3 μA

BZX884-B/C6V8 VR = 4 V 2 μA

BZX884-B/C7V5 VR = 5 V 1 μA

BZX884-B/C8V2 VR = 5 V 700 nA

BZX884-B/C9V1 VR = 6 V 500 nA

BZX884-B/C10 VR = 7 V 200 nA

BZX884-B/C11 VR = 8 V 100 nA

BZX884-B/C12 VR = 8 V 100 nA

BZX884-B/C13 VR = 8 V 100 nA

BZX884-B/C15 to 75 VR = 0.7 VZnom 50 nA

2004 Mar 26 5

NXP Semiconductors Product data sheet

Voltage regulator diodes BZX884 series

Table 1 Per type BZX884-B /C2V4 to B/C24

Tj = 25 °C unless otherwise specified.

BZX884-

B or C

XXX

WORKING VOLTAGE

VZ (V)

at IZ = 5 mA

DIFFERENTIAL RESISTANCE

rdif (Ω)TEMP. COEFF.

SZ (mV/K)

at IZtest = 5 mA

(see Figs 3 and 4)

DIODE CAP.

Cd (pF)

at f = 1 MHz;

VR = 0 V

NON-REPETITIVE PEAK

REVERSE CURRENT

IZSM (A) at tp = 100 μs;

Tamb = 25 °C

Tol. ±2% (B) Tol. ±5% (C) at IZtest = 1 mA at IZtest = 5 mA

MIN. MAX. MIN. MAX. TYP. MAX. TYP. MAX. TYP. MAX. MAX.

2V4 2.35 2.45 2.28 2.52 275 400 70 100 −1.3 450 6.0

2V7 2.65 2.75 2.57 2.84 300 450 75 100 −1.4 440 6.0

3V0 2.94 3.06 2.85 3.15 325 500 80 95 −1.6 425 6.0

3V3 3.23 3.37 3.14 3.47 350 500 85 95 −1.8 410 6.0

3V6 3.53 3.67 3.42 3.78 375 500 85 90 −1.9 390 6.0

3V9 3.82 3.98 3.71 4.10 400 500 85 90 −1.9 370 6.0

4V3 4.21 4.39 4.09 4.52 410 600 80 90 −1.7 350 6.0

4V7 4.61 4.79 4.47 4.94 425 500 50 80 −1.2 325 6.0

5V1 5.00 5.20 4.85 5.36 400 480 40 60 −0.5 300 6.0

5V6 5.49 5.71 5.32 5.88 80 400 15 40 1.0 275 6.0

6V2 6.08 6.32 5.89 6.51 40 150 610 2.2 250 6.0

6V8 6.66 6.94 6.46 7.14 30 80 615 3.0 215 6.0

7V5 7.35 7.65 7.13 7.88 15 80 210 3.6 170 4.0

8V2 8.04 8.36 7.79 8.61 20 80 210 4.3 150 4.0

9V1 8.92 9.28 8.65 9.56 20 100 210 5.2 120 3.0

10 9.80 10.20 9.50 10.50 20 150 210 6.0 110 3.0

11 10.78 11.22 10.45 11.55 25 150 210 6.9 110 2.5

12 11.76 12.24 11.40 12.60 25 150 210 7.9 105 2.5

13 12.74 13.26 12.35 13.65 25 170 210 8.8 105 2.5

15 14.70 15.30 14.25 15.75 25 200 315 10.7 100 2.0

16 15.68 18.32 15.20 16.80 50 200 10 40 12.4 90 1.5

18 17.64 18.36 17.10 18.90 50 225 10 45 14.4 80 1.5

20 19.60 20.40 19.00 21.00 60 225 15 55 16.4 70 1.5

22 21.56 22.44 20.90 23.10 60 250 20 55 18.4 60 1.25

24 23.52 24.48 22.80 25.20 60 250 25 70 20.4 55 1.25

2004 Mar 26 6

NXP Semiconductors Product data sheet

Voltage regulator diodes BZX884 series

Table 2 Per type BZX884-B /C27 to B/C75

Tj = 25 °C unless otherwise specified.

BZX884-

B or C

XXX

WORKING VOLTAGE

VZ (V)

at IZ = 2 mA

DIFFERENTIAL RESISTANCE

rdif (Ω)TEMP. COEFF.

SZ (mV/K)

at IZtest = 2 mA

(see Figs 3 and 4)

DIODE CAP.

Cd (pF)

at f = 1 MHz;

VR = 0 V

NON-REPETITIVE PEAK

REVERSE CURRENT

IZSM (A) at tp = 100 μs;

Tamb = 25 °C

Tol. ±2% (B) Tol. ±5% (C) at IZtest = 0.5 mA at IZtest = 2 mA

MIN. MAX. MIN. MAX. TYP. MAX. TYP. MAX. TYP. MAX. MAX.

27 26.46 27.54 25.65 28.35 65 300 25 80 23.4 50 1.0

30 29.40 30.60 28.50 31.50 70 300 30 80 26.6 50 1.0

33 32.34 33.66 31.35 34.65 75 325 35 80 29.7 45 0.9

36 35.28 36.72 34.20 37.80 80 350 35 90 33.0 45 0.8

39 38.22 39.78 37.05 40.95 80 350 40 130 36.4 45 0.7

43 42.14 43.86 40.85 45.15 85 375 45 150 41.2 40 0.6

47 46.06 47.94 44.65 49.35 85 375 50 170 46.1 40 0.5

51 49.98 52.02 48.45 53.55 90 400 60 180 51.0 40 0.4

56 54.88 57.12 53.20 58.80 100 425 70 200 57.0 40 0.3

62 60.76 63.24 58.90 65.10 120 450 80 215 64.4 35 0.3

68 66.64 69.36 64.60 71.40 150 475 90 240 71.7 35 0.25

75 73.50 76.50 71.25 78.75 170 500 95 255 80.2 35 0.2

2004 Mar 26 7

NXP Semiconductors Pr oduct data sheet

Voltage regulator diodes BZX884 series

GRAPHICAL DATA

handbook, halfpage

0.6 1

300

100

200

MBG781

0.8 VF (V)

(mA)

Fig.2 Forward current as a function of forward

voltage; typical values.

Tj = 25 °C.

handbook, halfpage

0.5

−2

−1

MLD444

1IZ (mA)

(mV/K)

−1.5

−1

−0.5

2V4

4V7

4V3

3V9

3V6

3V3

3V0

2V7

Fig.3 Temperature coefficient as a functi on of

working current; typical values.

BZX884-B/C2V4 to B/C4V7.

Tj = 25 to 150 °C.

handbook, halfpage

−4

MLD445

10−1110

IZ (mA)

(mV/K)

102

9V1

5V6

5V1

8V2

7V5

6V8

6V2

Fig.4 Temperature coefficient as a functi on of

working current; typical values.

BZX884-B/C5V1 to B/C15.

Tj = 25 to 150 °C.

2004 Mar 26 8

NXP Semiconductors Pr oduct data sheet

Voltage regulator diodes BZX884 series

PACKAGE OUTLINE

UNIT A1

max.

A(1) be

REFERENCES

OUTLINE

VERSION EUROPEAN

PROJECTION ISSUE DATE

IEC JEDEC JEITA

mm 0.50

0.46 0.55

0.47

0.03 0.62

0.55 0.65

DIMENSIONS (mm are the original dimensions)

Notes

1. Including plating thickness

2. The marking bar indicates the cathode

0.30

0.22

SOD882 03-04-16

03-04-17

1.02

0.95

(2)

eadless ultra small plastic package; 2 terminals; body 1.0 x 0.6 x 0.5 mm SOD88

0 0.5 1 mm

scale

2004 Mar 26 9

NXP Semiconductors Pr oduct data sheet

Voltage regulator diodes BZX884 series

SOLDERING

Reflow soldering is the only recommended soldering method.

DATA SHEET STATUS

Notes

1. Please consult the most recently issued document before initiating or completing a design.

2. The prod uct status of dev i ce(s) described in this document may have changed since this document was published

and may differ in case of multiple devices. The latest product status information is available on th e Internet at

URL http://www.nxp.com.

DOCUMENT

STATUS(1) PRODUCT

STATUS(2) DEFINITION

Objective data sheet Development This document contains data from the objective specification for pro duct

development.

Preliminary data sheet Qualification This document contains data from the preliminary specification.

Product data sheet Production T his document contains the product specification.

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does not give any representations or warranties,

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of such information and shall have no liability for the

consequenc es of use of such information.

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reserves the right to make changes to information

published in this doc ument, including without limitation

specifications and product descriptions, at any time and

without notice. This document supersedes and replaces all

information supplied prior to the publication hereof.

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equipment, nor in applications where failure or malfunction

of an NXP Semiconductors product can reasonably be

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Applications ⎯ Applications that are described herein for

any of these products are for illustrative purposes only.

NXP Semiconductors makes no representation or

warranty that such applications will be suitable for the

specified use witho ut fu rth e r testing or modification.

Limiting values ⎯ Stress above one or more limiting

values (as defined in the Absolute Maximum Ratings

System of IEC 60134) may cause permanent damage to

the device. Limiting values a re s t ress ratings only and

operation of the device at these or an y other conditions

above those given in the Characteristics sections of this

document is not implied. Exposure to limiting values for

extended periods may affect device reliability.

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products are sold subject to the general terms and

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Quick refer ence data ⎯ The Quick reference data is an

extract of th e product data given in the Limiting values and

Characteristics sections of this docu ment, and as such is

not complete, exhaus tive or legally binding.

NXP Semiconductors

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Customer notification

This data sheet was changed to reflect the new company name NXP Semiconductors. No changes were

made to the content, except for the legal definitions and disclaimers.

Printed in The Netherlands R76/02/pp10 Date of release: 2004 Mar 26 Document orde r number: 9397 750 12713