1MBI1200U4C-170 - Fuji Electric

1MBI1200U4C-170 IGBT Modules

IGBT MODULE (U series)

1700V / 1200A / 1 in one package

Features

High speed switching

Voltage drive

Low Inductance module structure

Applications

Inverter for Motor Drive

AC and DC Servo Drive Ampliﬁer

Uninterruptible Power Supply

Industrial machines, such as Welding machines

Maximum Ratings and Characteristics

Absolute Maximum Ratings (at Tc=25°C unless otherwise speciﬁed)

Items Symbols Conditions Maximum ratings Units

Collector-Emitter voltage VCES 1700 V

Gate-Emitter voltage VGES ±20 V

Collector current

Ic Continuous Tc=25°C 1600

Tc=80°C 1200

Ic pulse 1ms Tc=25°C 3200

Tc=80°C 2400

-Ic 1200

-Ic pulse 1ms 2400

Collector power dissipation Pc 1 device 7350 W

Junction temperature Tj 150 °C

Storage temperature Tstg -40 to +125 °C

Isolation voltage Between terminal and copper base (*1) Viso AC : 1min. 3400 VAC

Screw torque

Mounting (*2) 5.75

N·mMain Terminals (*2) 10

Sense Terminals (*2) 2.5

Note *1: All terminals should be connected together when isolation test will be done.

Note *2: Recommendable value : Mounting : 4.25-5.75 N·m (M6), Main Terminal : 8-10 N·m (M8), Sense Terminal : 1.7-2.5 N·m (M4)

Electrical characteristics (at Tj= 25°C unless otherwise speciﬁed)

Items Symbols Conditions Characteristics Units

min. typ. max.

Zero gate voltage collector current ICES VGE = 0V, VCE = 1700V - - 1.0 mA

Gate-Emitter leakage current IGES VCE = 0V, VGE = ±20V - - 2400 nA

Gate-Emitter threshold voltage VGE (th) VCE = 20V, IC = 1200mA 5.5 6.5 7.5 V

Collector-Emitter saturation voltage

VCE (sat)

(main terminal) VGE = 15V

IC = 1200A

Tj=25°C - 2.43 2.61

Tj=125°C - 2.83 -

VCE (sat)

(chip)

Tj=25°C - 2.25 2.40

Tj=125°C - 2.65 -

Input capacitance Cies VGE = 0V, VCE = 10V, f = 1MHz - 112 - nF

Turn-on time ton VCC = 900V, IC = 1200A

VGE = ±15V, Tj = 125°C

Rgon = 3.9Ω, Rgoff = 1.5Ω

- 1.80 -

µs

tr - 0.85 -

Turn-off time toff - 1.30 -

tf - 0.35 -

Forward on voltage

(main terminal) VGE = 0V

IF = 1200A

Tj=25°C - 1.98 2.36

Tj=125°C - 2.18 -

(chip)

Tj=25°C - 1.80 2.15

Tj=125°C - 2.00 -

Reverse recovery time trr IF = 1200A - 0.35 - µs

Lead resistance, terminal-chip (*3) R lead - 0.146 - mΩ

Note *3: Biggest internal terminal resistance among arm.

Thermal resistance characteristics

Items Symbols Conditions Characteristics Units

min. typ. max.

Thermal resistance (1device) Rth(j-c) IGBT - - 0.017

°C/WFWD - - 0.030

Contact thermal resistance (1device) Rth(c-f) with Thermal Compound (*4) - 0.006 -

Note *4: This is the value which is deﬁned mounting on the additional cooling ﬁn with thermal compound.

1MBI1200U4C-170

IGBT Modules

Characteristics (Representative)

Capacitance vs. Collector-Emitter voltage (typ.) Dynamic Gate charge (typ.)

Collector current vs. Collector-Emitter voltage (typ.)

Tj=25°C ,chip

Collector-Emitter voltage vs. Gate-Emitter voltage (typ.)

VGE=+15V,chip

Tj= 125°C, chip

Tj=25°C ,chip

Collector-Emitter voltage vs. Gate-Emitter voltage (typ.)

Collector current vs. Collector-Emitter voltage (typ.)

VGE=0V, f= 1MHz, Tj= 25°C Tj= 25°C

400

800

1200

1600

2000

2400

2800

0.0 1.0 2.0 3.0 4.0 5.0

Collector current : Ic [A]Collector current : Ic [A]

Collector current : Ic [A]

Collector-Emitter voltage : VCE [V]

VGE=20V 15V 12V

10V

400

800

1200

1600

2000

2400

2800

0.0 1.0 2.0 3.0 4.0 5.0

Collector-Emitter voltage : VCE [V]

VGE=20V15V12V

10V

400

800

1200

1600

2000

2400

2800

0 1 2 3 4 5

Collector-Emitter voltage : VCE [V]

Tj=125°CTj=25°C

5 10 15 20 25

Collector - Emitter voltage : VCE [ V ]

Gate - Emitter voltage : VGE [ V ]

Ic=2400A

Ic=1200A

Ic=600A

100

1000

0 10 20 30

Capacitance : Cies, Coes, Cres [ nF ]

Collector-Emitter voltage : VCE [V]

Cies

Coes

Cres

200

400

600

800

1000

0 1000 2000 3000 4000 5000

Gate charge : Qg [ nC ]

VGE

VCE

Collector-Emitter voltage : VCE [V]

Gate-Emitter voltage : VGE [V]

IGBT Modules

1MBI1200U4C-170

Switching time vs. Gate resistance (typ.)

Vcc=900V, Ic=1200A,VGE=±15V, Tj= 125°C

Vcc=900V, VGE=±15V, Rgon=3.9Ω, Rgoff=1.5Ω, Tj= 125°C

Switching time vs. Collector current (typ.)

Switching loss vs. Gate resistance (typ.)

Vcc=900V, Ic=1200A,VGE=±15V, Tj= 125°C

Reverse bias safe operating area (max.)

Vcc=900V, VGE=±15V, Rgon=3.9Ω, Rgoff=1.5Ω, Tj= 125°C

Switching loss vs. Collector current (typ.)

± VGE=15V ,Tj = 125°C / chip

0.0

0.2

0.4

0.6

0.8

1.0

1.2

1.4

1.6

1.8

2.0

2.2

2.4

0 400 800 1200 1600 2000

Switching time : ton, tr, toff, tf [ us ]

Collector current : Ic [ A ]

ton

toff

0.0

1.0

2.0

3.0

4.0

5.0

6.0

02468 10 12 14 16 18

Gate resistance : Rg [ Ω ]

toff

ton

100

200

300

400

500

600

700

800

0 400 800 1200 1600 2000

Switching loss : Eon, Eoff, Err [ mJ/pulse ]

Collector current : Ic [ A ] , Forward current : IF [ A ]

Eon

Eoff

Err

200

400

600

800

1000

1200

1400

02468 10 12 14 16 18

Switching loss : Eon, Eoff, Err [ mJ/pulse ]

Gate resistance : Rg [ Ω ]

Eoff

Err

Eon

400

800

1200

1600

2000

2400

2800

0 400 800 1200 1600 2000

Collector current : Ic [ A ]

Collector - Emitter voltage : VCE [ V ]

1MBI1200U4C-170

IGBT Modules

Forward current vs. Forward on voltage (typ.)

chip

Reverse recovery characteristics (typ.)

Vcc=900V, VGE=±15V, Rgon=3.9Ω, Tj=125°C

Transient thermal resistance (max.)

400

800

1200

1600

2000

2400

2800

0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0

Forward current : IF [ A ]

Forward on voltage : VF [ V ]

Tj=25°C Tj=125°C

200

400

600

800

1000

1200

1400

1600

0 400 800 1200 1600 2000

0.0

0.2

0.4

0.6

0.8

1.0

1.2

1.4

1.6

Reverse recovery time : trr [us]

Reverse recovery current : Irr [ A ]

Forward current : IF [ A ]

trr

Irr

0.0001

0.0010

0.0100

0.1000

0.001 0.010 0.100 1.000

Thermal resistanse : Rth(j-c) [ °C/W ]

Pulse width : Pw [ sec ]

FWD

IGBT

IGBT Modules

1MBI1200U4C-170

Equivalent Circuit Schematic

Outline Drawings, mm

main emitter

main collector

sense emitter E

gate G

sense collector C

1MBI1200U4C-170 IGBT Modules

WARNING

1. This Catalog contains the product speciﬁcations, characteristics, data, materials, and structures as of October 2008.

The contents are subject to change without notice for speciﬁcation changes or other reasons. When using a product listed in this

Catalog, be sure to obtain the latest speciﬁcations.

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express or implied, under any patent, copyright, trade secret or other intellectual property right owned by Fuji Electric Device

Technology Co., Ltd. is (or shall be deemed) granted. Fuji Electric Device Technology Co., Ltd. makes no representation or

warranty, whether express or implied, relating to the infringement or alleged infringement of other's intellectual property rights which

may arise from the use of the applications described herein.

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products may become faulty. When using Fuji Electric semiconductor products in your equipment, you are requested to take

adequate safety measures to prevent the equipment from causing a physical injury, ﬁre, or other problem if any of the products

become faulty. It is recommended to make your design fail-safe, ﬂame retardant, and free of malfunction.

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normal reliability requirements.

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