BUK7575-100A
N-channel TrenchMOS standard level FET
Rev. 02 — 30 July 2009 Product data sheet
1. Product profile
1.1 General description
Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic
package using TrenchMOS technology. This product has been designed and qualified to
the appropriate AEC standard for use in automotive critical applications.
1.2 Features and benefits
Low conduction losses due to low
on-state resistance
Q101 compliant
Suitable for standard level gate drive
sources
Suitable for thermally demanding
environments due to 175 °C rating
1.3 Applications
12 V, 24 V and 42 V loads
Automotive and general purpose
power switching
Motors, lamps and soleno ids
1.4 Quick reference data
Table 1. Quick reference
Symbol Parameter Conditions Min Typ Max Unit
VDS drain-source voltage Tj≥25 °C; Tj≤175 °C - - 100 V
IDdrain current VGS =10V; T
mb =25°C;
see Figure 1 and 3--23A
Ptot total power
dissipation Tmb = 25 °C; see Figure 2 --99W
Avalanche ruggedness
EDS(AL)S non-repetitive
drain-source
avalanche energy
ID=14A; V
sup ≤100 V;
RGS =50Ω; VGS =10V;
Tj(init) = 25 °C; unclamped
- - 100 mJ
Sta tic chara cteristics
RDSon drain-source
on-state resistance VGS =10V; I
D=13A;
Tj= 175 °C; see Figure 12
and 13
- - 187 mΩ
VGS =10V; I
D=13A;
Tj= 25 °C; see Figure 12
and 13
- 6475mΩ
BUK7575-100A_2 © NXP B.V. 2009. All rights reserved.
Product data sheet Rev. 02 — 30 July 2009 2 of 13
NXP Semiconductors BUK7575-100A
N-channel TrenchMOS standard level FET
2. Pinning information
3. Ordering information
Table 2. Pinning information
Pin Symbol Description Simplified outline Graphic symbol
1G gate
SOT78A
(TO-220AB)
2D drain
3S source
mb D mounting base; connected to
drain
12
mb
3
S
D
G
m
bb076
Table 3. Orderi ng information
Type number Package
Name Description Version
BUK7575-100A TO-220AB plastic single-ended package; heatsink mounted; 1 mounting hole; 3-lead
TO-220AB SOT78A
BUK7575-100A_2 © NXP B.V. 2009. All rights reserved.
Product data sheet Rev. 02 — 30 July 2009 3 of 13
NXP Semiconductors BUK7575-100A
N-channel TrenchMOS standard level FET
4. Limiting values
Table 4. Limiting values
In accordance with the Absolute Maxi mum Rating System (IEC 60134).
Symbol Parameter Conditions Min Max Unit
VDS drain-source voltage Tj≥25 °C; Tj≤175 °C - 100 V
VDGR drain-gate voltage RGS =20kΩ-100V
VGS gate-source voltage -20 20 V
IDdrain current Tmb =25°C; V
GS =10V; see Figure 1 and 3-23A
Tmb =100°C; V
GS = 10 V; see Figure 1 -16.2A
IDM peak drain current Tmb =25°C; t
p≤10 µs; pulsed; see Figure 3 -92A
Ptot total power dissipation Tmb =25°C; see Figure 2 -99W
Tstg storage temperature -55 175 °C
Tjjunction temperature -55 175 °C
Source-drain diode
ISsource current Tmb =25°C - 23 A
ISM peak source current tp≤10 µs; pulsed; Tmb =25°C - 92 A
Avalanche ruggedness
EDS(AL)S non-repetitive
drain-source avalanche
energy
ID=14A; V
sup ≤100 V; RGS =50Ω; VGS =10V;
Tj(init) = 25 °C; unclamped -100mJ
Fig 1. Normalized continuous drain current as a
function of mounting base temperature Fig 2. Normalized total power dissipation as a
function of mounting base temperature
Tmb (°C)
0 20015050 100
03aa24
40
80
120
Ider
(%)
0
Tmb (°C)
0 20015050 100
03na19
40
80
120
Pder
(%)
0
BUK7575-100A_2 © NXP B.V. 2009. All rights reserved.
Product data sheet Rev. 02 — 30 July 2009 4 of 13
NXP Semiconductors BUK7575-100A
N-channel TrenchMOS standard level FET
Fig 3. Safe operating area; continuous and peak drain currents as a function of drain-source voltage
03nb34
VDS (V)
1 103
102
10
102
10
103
ID
(A)
1
RDSon = VDS/ID
D.C.
tp
tp
T
P
t
T
δ =
10 ms
1 ms
tp = 10 us
100 us
100 ms
BUK7575-100A_2 © NXP B.V. 2009. All rights reserved.
Product data sheet Rev. 02 — 30 July 2009 5 of 13
NXP Semiconductors BUK7575-100A
N-channel TrenchMOS standard level FET
5. Thermal characteristics
Table 5. Thermal characteristics
Symbol Parameter Conditions Min Typ Max Unit
Rth(j-mb) thermal resistance from
junction to mounting
base
see Figure 4 --1.5K/W
Rth(j-a) thermal resistance from
junction to ambient -60-K/W
Fig 4. Transient thermal impedance from junction to mounting base as a function of pulse duration
03nb35
t
p
(s)
10
−6
10
−1
110
−2
10
−3
10
−5
10
−4
1
10
−1
10
Z
th(j-mb)
(K/W)
10
−2
Single Shot
0.2
0.1
0.05
0.02
δ = 0.5
t
p
t
p
T
P
t
T
δ =
BUK7575-100A_2 © NXP B.V. 2009. All rights reserved.
Product data sheet Rev. 02 — 30 July 2009 6 of 13
NXP Semiconductors BUK7575-100A
N-channel TrenchMOS standard level FET
6. Characteristics
Table 6. Characteristics
Symbol Parameter Conditions Min Typ Max Unit
Static characteristics
V(BR)DSS drain-source
breakdown voltage ID=0.25mA; V
GS =0V; T
j=25°C 100 - - V
ID=0.25mA; V
GS =0V; T
j=-55°C 89 - - V
VGS(th) gate-source threshold
voltage ID=1mA; V
DS = VGS; Tj= 175 °C;
see Figure 11 1- - V
ID=1mA; V
DS = VGS; Tj=-55°C;
see Figure 11 --4.4V
ID=1mA; V
DS = VGS; Tj=25°C;
see Figure 11 234V
IDSS drain leakage current VDS =100V; V
GS =0V; T
j= 175 °C - - 500 µA
VDS =100V; V
GS =0V; T
j= 25 °C - 0.05 10 µA
IGSS gate leakage current VDS =0V; V
GS =20V; T
j= 25 °C - 2 100 nA
VDS =0V; V
GS =-20V; T
j= 25 °C - 2 100 nA
RDSon drain-source on-state
resistance VGS =10V; I
D=13A; T
j= 175 °C;
see Figure 12 and 13 --187mΩ
VGS =10V; I
D=13A; T
j=25°C;
see Figure 12 and 13 -6475mΩ
Dynamic characteristics
Ciss input capacitance VGS =0V; V
DS =25V; f=1MHz;
Tj=25°C; see Figure 15 - 907 1210 pF
Coss output capacitance - 127 150 pF
Crss reverse transfer
capacitance - 78 110 pF
td(on) turn-on delay time VDS =30V; R
L=2.2Ω; VGS =10V;
RG(ext) =5.6Ω; Tj=25°C -8-ns
trrise time - 39 - ns
td(off) turn-off delay time - 26 - ns
tffall time - 24 - ns
LDinternal drain
inductance from drain lead 6 mm from package to
centre of die; Tj=25°C -4.5-nH
from contact screw on mounting base to
centre of die; Tj=25°C -3.5-nH
LSinternal source
inductance from source lead to source bond pad;
Tj=25°C -7.5-nH
Source-drain diode
VSD source-drain voltage IS=25A; V
GS =0V; T
j=25°C;
see Figure 14 - 0.85 1.2 V
trr reverse recovery time IS=13A; dI
S/dt = -100 A/µs; VGS =-10V;
VDS =30V; T
j=25°C -64-ns
Qrrecovered charge - 120 - nC
BUK7575-100A_2 © NXP B.V. 2009. All rights reserved.
Product data sheet Rev. 02 — 30 July 2009 7 of 13
NXP Semiconductors BUK7575-100A
N-channel TrenchMOS standard level FET
Fig 5. Output characteristics: drain current as a
function of drain-source voltage; typical values Fig 6. Drain-source on-state resistance as a function
of gate-source voltage; typical values
Fig 7. Sub-threshold drain current as a function of
gate-source voltage Fig 8. Forward transconductance as a function of
drain current; typical values
03nb31
0
10
20
30
40
50
60
0246810
VDS (V)
ID
(A) 109
8
VGS (V) =
4.5
5.5
6.5
7.5
20
03nb30
50
55
60
65
70
75
80
85
90
5101520
VGS (V)
RDSon
(m
Ω
)
03aa35
VGS (V)
0642
10−4
10−5
10−2
10−3
10−1
ID
(A)
10−6
min typ max
03nb28
0
5
10
15
20
0 10203040
ID (A)
gfs
(S)
BUK7575-100A_2 © NXP B.V. 2009. All rights reserved.
Product data sheet Rev. 02 — 30 July 2009 8 of 13
NXP Semiconductors BUK7575-100A
N-channel TrenchMOS standard level FET
Fig 9. Transfer characteristics: drain curre nt as a
function of gate-source voltage; typical values Fig 10. Gate-source voltage as a function of turn-on
gate charge; typical values
Fig 11. Gate-source threshold voltage as a function of
junction temperature Fig 12. Drain-source on-state resistance as a function
of drain current; typical values
03nb29
0
5
10
15
20
25
30
35
02468
VGS (V)
ID
(A)
Tj = 175 °CT
j = 25 °C
03nb27
0
1
2
3
4
5
6
7
8
9
10
0102030
QG (nC)
VGS
(V)
VDS = 80 VVDS = 14 V
Tj (°C)
−60 180120060
03aa32
2
3
1
4
5
VGS(th)
(V)
0
max
typ
min
03nb32
40
60
80
100
120
01020304050
ID (A)
RDSon
(mΩ)6 6.5 7810
VGS
(V)= 5.5
BUK7575-100A_2 © NXP B.V. 2009. All rights reserved.
Product data sheet Rev. 02 — 30 July 2009 9 of 13
NXP Semiconductors BUK7575-100A
N-channel TrenchMOS standard level FET
Fig 13. Normalized drain-source on-state resistance
factor as a function of junction temperature
Fig 14. Reverse diode current as a fu nction of reverse
diode voltage; typical values
Fig 15. Input, output and reverse transfer capacitances as a function of drain-source voltage; typical valu es
03aa29
0
1
2
3
-60 0 60 120 180
Tj (°C)
a
03nb26
0
5
10
15
20
25
30
35
40
45
0.0 0.2 0.4 0.6 0.8 1.0 1.2
VSD (V)
IS
(A)
Tj
= 175 °CT
j = 25 °C
03nb33
0
200
400
600
800
1000
1200
1400
1600
1800
2000
10−210−111010
2
VDS(V)
C
(pF) Ciss
Coss
Crss
BUK7575-100A_2 © NXP B.V. 2009. All rights reserved.
Product data sheet Rev. 02 — 30 July 2009 10 of 13
NXP Semiconductors BUK7575-100A
N-channel TrenchMOS standard level FET
7. Package outline
Fig 16. Package outline SOT78A (TO-220AB)
REFERENCES
OUTLINE
VERSION EUROPEAN
PROJECTION ISSUE DATE
IEC JEDEC JEITA
SOT78A SC-463-lead TO-220AB
D
D1
q
p
L
123
L1(1)
b1
ee
b
0 5 10 mm
scale
Plastic single-ended package; heatsink mounted; 1 mounting hole; 3-lead TO-220AB SOT78
A
DIMENSIONS (mm are the original dimensions)
AE
A1
c
Note
1. Terminals in this zone are not tinned.
Q
L2
UNIT A1b1D1ep
mm 2.54
qQ
AbD
cL2
max.
3.0 3.8
3.6
15.0
13.5
3.30
2.79
3.0
2.7
2.6
2.2
0.7
0.4
15.8
15.2
0.9
0.6
1.3
1.0
4.5
4.1
1.39
1.27
6.4
5.9
10.3
9.7
L1(1)
EL
03-01-22
05-03-14
mounting
base
BUK7575-100A_2 © NXP B.V. 2009. All rights reserved.
Product data sheet Rev. 02 — 30 July 2009 11 of 13
NXP Semiconductors BUK7575-100A
N-channel TrenchMOS standard level FET
8. Revision history
Table 7. Revision history
Document ID Release date Data sheet status Change notice Supersedes
BUK7575-100A_2 20090730 Product data sheet - BUK7575_7675_100A-01
Modifications: •The format of this data sheet has been redesigned to comply with the new identity
guidelines of NXP Semiconductors.
•Legal texts have been adapted to the new company name where appropriate .
•Type number BUK7575-100 A separated from data sheet BUK7575_7675_100A-01.
BUK7575_7675_100A-01
(9397 750 07623) 20001024 Product specification - -
BUK7575-100A_2 © NXP B.V. 2009. All rights reserved.
Product data sheet Rev. 02 — 30 July 2009 12 of 13
NXP Semiconductors BUK7575-100A
N-channel TrenchMOS standard level FET
9. Legal information
9.1 Data sheet status
[1] Please consult the most recently issued document before initiating or completing a design.
[2] The term 'short data sheet' is explained in section "Definitions".
[3] The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product
status information is available on the Internet at URL http://www.nxp.com.
9.2 Definitions
Draft — The document is a draft version only. The content is still under
internal review and subject to formal approval, which may result in
modifications or additions. NXP Semiconductors does not give any
representations or warrant ies as to t he accuracy or completeness of
information included herein and shall have no liab ility for the consequences of
use of such information.
Short data sheet — A short data sheet is an extract from a full da ta sheet
with the same product type number(s) and tit le. A short data sh eet is intended
for quick reference only and shou ld not b e relied u pon to cont ain det ailed and
full information. For detailed and full information see the relevant full data
sheet, which is available on request via the local NXP Semiconductors sales
office. In case of any inconsistency or conflict with the short data sheet, the
full data sheet shall pre va il.
9.3 Disclaimers
General — Information in this document is believed to be accurate and
reliable. However, NXP Semiconductors d oes not give any represent ations or
warranties, expressed or impli ed, as to the accuracy or completeness of such
information and shall have no liability for th e co nsequences of use of such
information.
Right to make changes — NXP Semiconductors reserves the right to make
changes to information published in this document, including without
limitation specifications and product descriptions, at any time and without
notice. This document supersedes and replaces all informa tion supplied prior
to the publication hereof .
Suitability for use — NXP Semiconductors products are not designed,
authorized or warranted to be suitable for use in medical, military, aircraft,
space or life support equipment, nor in applications where f ailure or
malfunction of an NXP Semiconductors product can reasonably be expected
to result in personal injury, death or severe property or environmental
damage. NXP Semiconductors accepts no liability for inclusion and/or use of
NXP Semiconductors products in such equipment or applications and
therefore such inclusion and/or use is at the customer’s own risk.
Applications — Applications that are described herein for any of these
products are for il lustrative purposes only. NXP Semiconductors makes no
representation or warranty that such applications will be suitable for the
specified use without further testing or modification.
Quick reference data — The Quick reference data is an extract of the
product data given in the Limiting values and Characteristics sections of this
document, and as such is not complete, exhaustive or legally binding.
Limiting values — Stress above one or more limiting values (as defined in
the Absolute Maximum Rati ngs System of I EC 60134) may cause perman ent
damage to the device. Limiting values are stress ratings only and operation of
the device at these or any other co nditions above those given in the
Characteristics sections of this document is not implied. Exposure to limiting
values for extended periods may af fect device reliability.
Terms and conditions of sale — NXP Semiconductors products are sold
subject to the general terms and conditions of commercial sale, as published
at http://www.nxp.com/profile/terms, including those pertaining to warranty,
intellectual property rights infringement and limitation of liability, unless
explicitly otherwise agreed to in writing by NXP Semiconductors. In case of
any inconsistency or conflict between inf ormation in this document and such
terms and conditions, the latter will prevail.
No offer to sell or license — Nothing in this document may be interpreted or
construed as an of fer t o sell product s that is open for accept ance or the gr ant,
conveyance or implication of any license under any copyrights, patents or
other industrial or intellectual property rights.
Export control — This document as well as the it em(s) described herein may
be subject to export control regulations. Export might require a prior
authorization from national authorities.
9.4 Trademarks
Notice: All refe renced brands, produc t names, service names and trademarks
are the property of their respective ow ners.
TrenchMOS — is a trademark of NXP B.V.
10. Contact information
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to : salesaddresses@nxp.com
Document status [1][2] Product status[3] Definition
Objective [short] data sheet Development This document contains data from the objecti ve specificat ion for product development.
Preliminary [short] dat a sheet Qualification This document contains data from the preliminary specification.
Product [short] dat a sheet Production This document contains the product specification.
NXP Semiconductors BUK7575-100A
N-channel TrenchMOS standard level FET
© NXP B.V. 2009. All rights reserved.
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: salesaddresses@nxp.com
Date of release: 30 July 2009
Document identifier: BUK7575-1 00A_2
Please be aware that important notices concerning this document and the product(s)
described herein, have been included in section ‘Legal information’.
11. Contents
1 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . .1
1.1 General description . . . . . . . . . . . . . . . . . . . . . .1
1.2 Features and benefits. . . . . . . . . . . . . . . . . . . . .1
1.3 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . .1
1.4 Quick reference data . . . . . . . . . . . . . . . . . . . . .1
2 Pinning information. . . . . . . . . . . . . . . . . . . . . . .2
3 Ordering information. . . . . . . . . . . . . . . . . . . . . .2
4 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . .3
5 Thermal characteristics . . . . . . . . . . . . . . . . . . .5
6 Characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . .6
7 Package outline . . . . . . . . . . . . . . . . . . . . . . . . .10
8 Revision history. . . . . . . . . . . . . . . . . . . . . . . . .11
9 Legal information. . . . . . . . . . . . . . . . . . . . . . . .12
9.1 Data sheet status . . . . . . . . . . . . . . . . . . . . . . .12
9.2 Definitions. . . . . . . . . . . . . . . . . . . . . . . . . . . . .12
9.3 Disclaimers. . . . . . . . . . . . . . . . . . . . . . . . . . . .12
9.4 Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . .12
10 Contact information. . . . . . . . . . . . . . . . . . . . . .12
