MCRF200I/1M00A - Microchip Technology

 2003 Microchip Technology Inc. DS21219H-page 1

MCRF200

Features

• Factory programming and memory serialization

(SQTPSM)

• One-time contactless programmable (developer

kit only)

• Read-only data transmission after programming

• 96 or 128 bits of One-Time Programmable (OTP)

user memory (also supports 48 and 64-bit

protocols)

• Typical operation frequency: 100 kHz-400 kHz

• Ultra low-power operation (5 µA @ VCC = 2V)

• Modulation options:

- ASK, FSK, PSK

• Data Encoding options:

- NRZ Direct, Differential Biphase, Manchester

Biphase

• Die, wafer, COB, PDIP or SOIC pack age option s

• Factory programming options

Application

• Low-cost alternative for existing low-frequency

RFID devic es

• Access control and time attendance

• Securit y system s

• Anim al t agg ing

• Product identification

• Industri al tagging

• Inventory control

Package Type

Description

The MCRF200 is a passive Radio Frequency Identifi-

cation (RFID) device for low-frequency applications

(100 kHz-400 kHz). The device is powered by

rectifying an incoming RF signal from the reader. The

device requires an external LC resonant circuit to

rece ive th e inco ming RF signal and t o send data. The

device develops a sufficient DC voltage for operation

when it s external coil volt age reaches approximately 10

VPP.

This device has a tot al of 128 bits o f user programmable

memory and an additional 12 bits in its configuration

user memory by using a contactless programmer in a

microID developer kit such as DV1030 01 or PG103001.

However, in production volume the MCRF200 is

programmed at the factory (Microchip SQTP – see

Technical Bulletin TB023). The device is a One-Time

Programmable (OTP) integ rated c ircuit and o perates as

a read-only device after programming .

MCRF200

Reader

Signal

Data

PDIP/SOIC VAVB

I/O

RESET

VSS

VCC

Note: Pins 3, 4, 5 and 6 are for device test purposes only.

Pins 1 and 8 are for antenna connections.

DO NOT ground pin 5.

125 kHz microID™ Passive RFID Device

MCRF200

DS21219H-page 2  2003 Microchip Technology Inc.

Block Diagram

The con figuration reg is ter i nc lud es op tions for co mm u-

nication protocol (ASK, FSK, PSK), data encoding

method, data rate, and data length.These options are

speci fie d by cu stom er and facto ry pro gra mmed du ri ng

assembly . Bec ause of its ma ny choices of configuration

optio ns, the devi ce can be e asily used as an alterna tive

or secon d source for mo st of the existin g low frequenc y

passiv e RFID devices av ailable today.

The device has a modulation transistor between the

two antenna connections (VA and VB). The modulation

transistor damps or undamps the coil voltage when it

sends data. The variation of coil voltage controlled by

the modulation transistor results in a perturbation of

voltage in reader antenna coil. By monitoring the

changes in reader coil voltage, the data transmitted

from the device can be reconstructed.

The device is available in die, wafer, Chip-on-Board

(COB) modules, PDIP, or SOIC packages. Factory

programming and memory serialization (SQTP) are

also available upon request. See TB023 for more

information on contact programming support.

The DV103001 developer’s kit includes Contactless

Programmer, ASK, FSK, PSK reference readers, and

reference design guide. The reference design guide

includes schematics for readers and contactless

programmer as well as in-depth document for antenna

circuit designs.

Column

Memory

Array

VCC

VSS

Rectifier

Clock

Generator

Coil

Connections

Decode

Row

Decode

Modulation

Control

Counter

Data

Modulation

Circuit

 2003 Microchip Technology Inc. DS21219H-page 3

MCRF200

1.0 ELECTRICAL CHARACTERISTICS

Absolute Maximum Ratings (†)

Storage temperature..............................................................................................................................- 65°C to +150°C

Ambient temperature with power applied................................................................................................-40°C to +125°C

Maximum current into coil pads ..............................................................................................................................50 mA

TABLE 1-1: AC AND DC CHARACTERISTICS

† NOTICE: Stresses above those listed under “Absolute Maximum Ratings” may cause permanent damage to

the device. This is a stress rating only and functional operation of the device at those or any other conditions

above th ose indi cated in the opera tional li stings of this sp ecificati on is no t implie d. Exposu re to maxim um rating

conditions for extended periods may affect device reliability.

All parameters apply across the

specified operating ranges unless

otherwise noted. Industri al (I): TA = -40°C to +85°C

Parameter Sym Min Typ Max Units Conditions

Clock frequency FCLK 100 — 400 kHz

Contactless programming time TWC — 2 — sec For all 128-bit array

Data retention 200 — — Years at 25°C

Coil current (Dynamic) ICD —50 µA

Operati ng current IDD —5 µAVCC = 2V

Turn-on -voltage (Dynami c) for

modulation VAVB10 — — VPP

VCC 2——VDC

Input Capacitance CIN — 2 — pF Between VA and VB

MCRF200

DS21219H-page 4  2003 Microchip Technology Inc.

2.0 FUNCTION DESCRIPTION

The device contains three major building blocks. They

are RF front-end, configuration and control logic, and

memory sections. The Block Diagram is shown on

page 1.

2.1 RF Front-End

The RF front-end of the device includes circuits for

rectification of the carrier, VDD (operating voltage) and

high-voltage clamping. This section also includes a

clock generator and modulation circuit.

2.1.1 RECTIFIER – AC CLAMP

The rectifier circuit rectifies RF voltage on the external

LC ante nna circu it. Any exces sive volt age on the tuned

circuit is clamp ed by the intern al circuit ry to a sa fe level

to prevent damage to the IC.

2.1.2 POWER-ON RESET

This circuit generates a Power-on Reset when the tag

first enters the reader field. The Reset releases when

suf ficien t powe r has dev elope d on the V DD regulator to

allow correct operation.

2.1.3 CLOCK GENERATOR

This circuit generates a clock based on the carrier

frequency from the reader. This clock is used to derive

all timing in the device, including the baud rate and

modulation rate.

2.1.4 MODULATION CIRCUIT

The device sends the encoded data to the reader by

AM-modulating the coil voltage across the tuned LC

circuit. A modulation transistor is placed between the

two antenna coil pads (VA and VB). The transist or turns

on and off base d on the m odu lat ion sig nal . As a res ul t,

the amplitude of the antenn a coil voltag e varies with the

modulation signal. See Figure 2-1 for details.

FIGURE 2-1: MODULATION SIGNAL AND MODULATED SIGNAL

MCRF200

Modulation

Signal

Modulation

Modulation Signal

Modulated RF Signal

(across VA and VB)

Amplitude

Transistor

 2003 Microchip Technology Inc. DS21219H-page 5

MCRF200

2.2 Configuration Register and

Control Logic

The configuration register determines the operational

parameters of the device. The configuration register

can not be programmed contactlessly; it is

programmed during wafer probe at the Microchip

factory. CB11 is always a zero; CB12 is set when

successful contact or contactless programming of the

data array has been completed. Once CB12 is set,

device program ming and erasin g is disabl ed. Table 2-4

cont ains a descri ptio n of t he bi t fun cti on s of th e co ntro l

2.2.1 BAUD RATE TIMING OPTION

The chi p w ill a cc es s d at a at a ba ud rate det erm ine d b y

bits CB2, CB3 and CB4 of the configuration register.

For example, MOD32 (CB2 = 0, CB3 = 1, CB4 = 1) has

32 RF cycles per bit. This gives the data rate of 4 kHz

for the RF carrier frequency of 128 kHz.

The default timing is MOD128 (FCLK/128), and this

mode is used for contact and contactless program-

ming. Once the array is successfully programmed, the

lock bit CB12 is set. When the lock bit is set, program-

ming and erasing the device becomes permanently

disabled. The configuration register has no effect on

device timing until the EEPROM data array is

programmed (CB12 = 1).

2.2.2 DATA ENCODING OPTION

This lo gic a cts upon the s erial dat a bein g read from th e

EEPROM. The logic en codes the dat a acc ording to the

configuration bits CB6 and CB7. CB6 and CB7

determine the data encoding method. The available

choices are:

• Non-return to zero-level (NRZ_L)

• Biphase Differential, Biphase Manchester

• Inverted Manches ter

2.2.3 MODULATION OPTION

CB8 and C B9 determine the modulati on protocol of the

encoded data. The available choices are:

• ASK

•FSK

• PSK_1

• PSK_2

When ASK (direct) option is chosen, the encoded data

is fed into the modulation transistor without change.

When FSK option is chosen, the encoded data is

represen ted by :

a) Sets of 10 RF carrier cycles (first 5 cycles →

higher amplitude, the last 5 cycles → lower

amplitude) for logic “high” level.

b) Sets of 8 RF carrier cycles (first 4 cycles →

higher amplitude, the last 4 cycles → lower

amplitude) for logic “low” level.

For example, FSK signal for MOD40 is represented:

a) 4 sets of 10 RF carrier cycles for data ‘1’.

b) 5 sets of 8 RF carrier cycles for data ‘0’.

Refer to Figure 2-2 for the FSK signal with MOD40

option.

The PSK_1 represents change in the phase of the

modulation signal at the change of the encoded data.

For example, the phase changes when the encoded

dat a is changed from ‘1’ to ‘0’, or from ‘0’ to ‘1’.

The PSK_2 represents change in the phase at the

change on ‘1’. For example, the phase changes when

the encoded data is changed from ‘0’ to ‘1’, or from ‘1’

to ‘1’.

FIGURE 2-2: ENCODED DATA AND FSK OUTPUT SIGNAL FOR MOD40 OPTION

Encoded Data ‘1’Encoded Data ‘0’

40 RF cycles 40 RF cycles

5 cycles (HI)

5 cycles (LO) 4 cycles (HI)

4 cycles (LO)

MCRF200

DS21219H-page 6  2003 Microchip Technology Inc.

FIGURE 2-3: PSK DATA MODULATION

2.2.4 MEMORY ARRAY LOCK BIT (CB12)

The CB12 must be ‘0’ for contactless programming

(Blank). The bit (CB12) is automatically set to ‘1’ as

soon as the device is programmed contactlessly.

2.3 Memory Section

The device has 128 bits of one-time programmable

(OTP) memory. The user can ch oose 96 or 128 bi ts by

selecting the CB1 bit in the configuration register. See

Table 2-4 for more details.

2.3.1 COLUMN AND ROW DECODER

LOGIC AND BIT COUNTER

The column and row decoders address the EEPROM

array at the clock rate and generate a serial data

stream for modulation. This data stream can be up to

128 bits in length. The size of the data stream is user

programmable with CB1 and can be set to 96 or 128

bits. Data lengths of 48 and 64 bits are available by

programming the data twice in the array, end-to-end.

The colu mn and row decoders route the pro per volt age

to the array for programming and reading. In the

programming modes, each individual bit is addressed

serially from bit 1 to bit 128.

2.4 Examples of Configuration

Settings

EXAMPLE 2-1: “08D” CONFIGURATION

EXAMPLE 2-2: “ 00A” CONFIGURATION

EXAMPL E 2-3: MCRF200

CONFIGURATION FOR

FDX-B ISO ANIMAL

STANDARD PROTOCOL

(ASP)

‘0’ ‘0’ ‘1’‘1’Encoded Data

PSK_ 1

Change on Data

PSK _2

Change on ‘1’

(NRZ_L)

‘1’

The “08D” (hex) configuration is interpreted a

follows:

“08D” → 0000-1000-1101

Referring to Table 2-4, the “08D” configuration

represents:

Modulation = PSK_1

PSK rate = rf/2

Data encoding = NRZ_L (direct)

Baud rate = rf/32 = MOD32

Memory size 128 bits

CB12 CB1

The “00A” (hex) configuration is interpreted as

follows:

“00A” → 0000-0000-1010

The MSB corresponds to CB12 and the LSB

corresponds to CB1 of the configuration register

Therefore, we have:

Referring to Table 2-4, the “00A” configuration

represents:

Not programmed device (blank), anticollision

disabled, FSK protocol, NRZ_L (direct) encod

ing, MOD50 (baud rate = rf/50), 96 bits.

CB12=0CB11=0CB10=0CB9=0

CB8=0CB7=0CB6=0CB5=0

CB4=1CB3=0CB2=1CB1=0

CB12 CB1

The FDX-B ISO Specification is:

Modulation = ASK

Data encoding = Differential biphase

Baud rate = rf/32 = 4 Kbits/sec for 128 kHz

Memory size = 128 bits

Referring to Table 2-4, the equivalent MCRF200

co nfiguration is: “14D”.

 2003 Microchip Technology Inc. DS21219H-page 7

MCRF200

TABLE 2-4: CONFIGURATION REGISTER

CB12 CB11 CB10 CB9 CB8 CB7 CB6 CB5 CB4 CB3 CB2 CB1

MEMORY SIZE

CB1 = 1 128-bit user memory array

CB1 = 0 96-bit user memory array

BAUD RATE

SYNC WORD

CB5 = 0 (Always)

DATA ENCODING

CB6 = 0; CB7 = 0 NRZ_L (Direct)

CB6 = 0; CB7 = 1 Biphase_S (Differential)

CB6 = 1; CB7 = 0 Biphase_L (Manchester)

CB6 = 1; CB7 = 1 (Inverted Manchester)

MODULATION OPTIONS

CB8 = 0; CB9 = 0 FSK 0 = Fc/8, 1 = Fc/10

CB8 = 0; CB9 = 1 Direct (ASK)

CB8 = 1; CB9 = 0 PSK_1

(phase change on change of data)

CB8 = 1; CB9 = 1 PSK_2

(phase change at beginning of a one)

PSK RATE OPTION

CB10 = 1 Carrier/4

CB10 = 0 Carrier/2

(ANTICOLLIS ION OPTION (Read-only)

CB11 = 0 Disabled (Always)

MEMORY ARRAY LOCK BIT (Read-only)

CB12 = 0 User memory array not locked (Blank)

CB12 = 1 User memory array is locked

(Programmed)

CB2 CB3 CB4 Rate

000MOD128

001MOD100

010MOD80

011MOD32

100MOD64

101MOD50

110MOD40

111MOD16

MCRF200

DS21219H-page 8  2003 Microchip Technology Inc.

3.0 MODES OF OPERATION

The device has two basic modes of operation: Native

mode and Read mode.

3.1 Native Mode

Every u nprogrammed blank de vice (CB12 =0) operates

in Native mode, regardless of configuration register

settings:

FCLK/128, FSK, NRZ_L (direct)

Once the user memory is programmed, the lock bit is

set (CB12=1) which causes the MCRF200 to switch

from Nati ve mode to the Commu nication mode defined

by the configuratio n register.

Refer to Figure 4-1 for contactless programming

sequence. Also see the microID™ 125 kHz RFID

System Des ign Gui de (DS51115) for more i nfo rma tio n.

3.2 Read Mode

After the device is programmed (CB12=1), the device

is operated in the Read-only mode. The device

transmits its data according to the protocol in the

configu r ati on regi ste r.

FIGURE 3-1: TYPICAL APPLICATION CIRCUIT

Pad VB

Pad VA

Input capacitance: 2 pF

RF Signal

Data

To Reader

amplifier/filter

From

Reader

IAC

2.5 mH 648 pF

fres 1

2πLC

------------------- 125 k H z==

125 kHz

MCRF200

 2003 Microchip Technology Inc. DS21219H-page 9

MCRF200

4.0 CONTACTLESS

PROGRAMMING

The contactless programm in g of the dev ic e is poss ibl e

for b lank de vice s (CB1 2=0) only and is recommended

for only low- v ol um e, ma nua l ope rati on du ring dev elo p-

ment. In volume production, the MCRF200 is normally

used as a factory programmed device only. The

contactless programming timing sequence consists of:

a) RF power-up signal.

b) Short gap (absence of RF field).

c) Verify signal (co ntin uo us RF signal).

d) Programming signal.

e) Device resp on se w ith prog ram me d dat a .

The blank device (CB12=0) understands the RF

power-up followed by a gap as a blank checking

comma nd, and out puts 128 bits of FSK data with all ‘ 1’s

after the short gap. To see this blank data (verify), the

reader/programmer must provide a continuous RF

signal for 128 bit-time. (The blank (unprogrammed)

device has all ‘F’s in its memory array. Therefore, the

blank da ta sh ould b e al l ‘1’s in FSK format). Since the

blank device operates at Default mode (MOD128),

there are 128 RF cycles for each bit. Therefore, the

time requirement to complete this verify is 128 bits x

128 RF cycles/bit x 8 use/cycles = 131.1 msec for

125 kHz signa l.

As soon as the device completes the verify , it enters the

programming mode. The reader/programmer must

provide RF programming data right after the verify. In

this programming mode, each bit lasts for 128 RF

cycles. Refe r to Figure 4-1 for the cont actless program-

ming sequence.

Customer must provide the following specific voltage

for the programming:

1. Power-up and verify signal = 13.5V ±1 VPP

2. Programmin g voltag e:

- To program bit to ‘1’: 13.5V ±1 VPP

- To program bit to ‘0’: 30V ±2 VPP

After the programming cycle, the device outputs

programmed data (response). The reader/programmer

can send the programming data repeatedly after the

device response until the programming is successfully

completed. The device locks the CB12 as soon as the

progra mming mode (ou t of field) is exited an d becomes

a read-only device.

Once the device is programmed (CB12=1), the device

outputs its data according to the configuration register.

The PG103001 (Contactless Programmer) is used for

the programming of the device. The voltage level

shown in Figure 4-1 is adjusted by R5 and R7 in the

contactless programmer. Refer to the MicroID™

125 kHz RFID System Design Guide (DS51115) for

more information.

MCRF200

DS21219H-page 10  2003 Microchip Technology Inc.

FIGURE 4-1: CONTACTLESS PROGRAMMING SEQUENCE

Power-up Gap

~ 50 - 100 µs13.5 ±1 VPP

High-Power

30 ± 2 VPP

Bit 1 Bit 2

128 bits x 128 cycles/bit x 8 µs/cycle = 131.1 ms

13.5 ± 1 VPP

Contactless Programming Protocol

f = 125 kHz

t = 8 µs

Bit 3…

Program

1 bit = 128 cycles x 8 µs/cycle = 1.024 ms

80 - 180 µs

Verify

FSK Signal

(R5)

128 bits

∆t = Guard Band

13.5 ± 1 VPP

(R5)

Low-Power

Signal Signal

(R7)

Note: Low-power signal: leaves bit = 1

High-power signal: programs bit = 0

Default programming protocol = FSK, Fc/8/10, 128 bits

For 96-bit programming, bits 33-64 are ‘don’t care’, but all

128-bit cycles must be in the sequence.

 2003 Microchip Technology Inc. DS21219H-page 11

MCRF200

5.0 MECHANICAL

SPECIFICATIONS FOR DIE

AND WAFER

FIGURE 5-1: DIE PLOT

TABLE 5-1: PAD COORDINATES (µm)

TABLE 5-2: PAD FUNCTION TABLE

VBVA

VSS VCC RESET I/O

Dev ice Test Only

Passivation

Openings

Pad

Name Pad

Width Pad

Height Pad

Center X Pad

Center Y

VA90.0 90.0 427.50 -734.17

VB90.0 90.0 -408.60 -734.17

Note 1: All coor dinat es are refe renc ed from the

center of the die.

2: Die size: 1.1215 mm x 1.7384 mm

44.15 mils x 68.44 mils

Name Function

VAAntenna Coil connection

VSS For device test only

Do Not Connect to Antenna

VCC

RESET

I/O

MCRF200

DS21219H-page 12  2003 Microchip Technology Inc.

TABLE 5-3: DIE MECHANICAL DIMENSIONS

TABLE 5-4: WAFER MECHANICAL SPECIFICATIONS

Specifications Min Typ Max Unit Comments

Bond pad openi ng —

—3.5 x 3.5

89 x 89 —

—mil

µmNote 1, Note 2

Die backgrind thickness —

—7

177.8 —

—mil

µmSawed 6” wafer on frame

(option = WF) Note 3

—

—11

279.4 —

—mil

µmUnsawed wafer

(option = W) Note 3

Die back gri nd thic k nes s tole ran ce —

——

—±1

±25.4 mil

µm

Die pa ssiv ati on thi ck nes s (mu lti lay er) — 0.9050 — µmNote 4

Die Size:

Die size X*Y before saw (step size)

Die size X*Y after saw —

—44.15 x 68.44

42.58 x 66.87 —

—mil

mil —

—

Note 1: The bond pad size is that of the passivation opening. The metal overlaps the bond pad passivation by at

least 0.1 mil.

2: Metal Pad Composition is 98.5% Aluminum with 1% Si and 0.5% Cu.

3: As the die thickness decreases, susceptibility to cracking increases. It is recommended that the die be as

thick as the application will allow.

4: The Die Passivation thickness (0.905 µm) can vary by device depending on the mask set used. The

passivation is formed by:

-Layer 1: Oxide (undoped oxide 0.135 µm)

-Layer 2: PSG (doped oxide, 0.43 µm)

-Layer 3: Oxynitride (top layer, 0.34 µm)

5: The conversion rate is 25.4 µm/mil.

Notice: Extreme care is urged in the handling and assembly of die products since they are susceptible to

mechanical and electrostatic damage.

Specifications Min Typ Max Unit Comments

Wafer Diameter — 8 — inch 150 mm

Die separation line width — 80 — µm

Dice per wafer — 14,000 — die

Batch size — 24 — wafer

 2003 Microchip Technology Inc. DS21219H-page 13

MCRF200

6.0 FAILED DIE IDENTIFICATION

Every die on the wafer is electrically tested according

to the data sheet specifications and visually inspected

to detect any mechanical damage such as mechanical

cracks and scratches.

Any faile d die in the test o r visual inspection is identified

by black colored ink. Therefore, any die covered with

black ink shou ld not be use d.

The ink dot specification:

• Ink dot size: minimum 20 µm x 20 µm

• Position: central third of die

• Color: bla ck

7.0 WAFER DELIVERY

DOCUMENTATION

Each wafer container is marked with the following

information:

• Microchip Technology Inc. MP Code

• Lot Number

• Total number of wafers in the container

• Tot a l num ber of good dice in the co nt ai ner

• Average die per wafer (DPW)

• Scribe number of wafers with number of good

dice

8.0 NOTICE ON DIE AND WAFER

HANDLING

The device is very susceptible to Electrostatic

Discharge (ESD). ESD can cause critical damage to

the device. Special attention is needed during the

handling process.

Any untraviolet (UV) light can erase the memory cell

contents of an unpackaged device. Flourescent lights

and sun light can also erase the memory cell although

it t akes m ore time th an UV lamp s. Ther efore , keep an y

unpackaged devices out of UV light and also avoid

direct exposure from strong flourescent lights and sun

light.

Certain integrated circuit (IC) manufacturing, chip-on-

board (C OB) and tag a ssembly opera tions may use UV

light. Operations such as backgrind, de-tape, certain

cleaning operations, ep oxy or glue cure should be don e

without exposing the die surface to UV light.

Using x-ray for die inspection will not harm the die, nor

erase memory cell contents.

MCRF200

DS21219H-page 14  2003 Microchip Technology Inc.

9.0 PACKAGING INFORMATION

9.1 Package Marking Information

XXXXXXXX

XXXXXNNN

YYWW

8-Lead PDIP (300 mil) Example:

8-Lead SOIC (150 mil) Example:

XXXXXXXX

XXXXYYWW

NNN

MCRF200

XXXXXNNN

0025

Legend: XX...X Customer specific information*

Y Year code (last digit of calendar year)

YY Year code (last 2 digits of calendar year)

WW Week code (week of January 1 is week ‘01’)

NNN Alphanum er ic trac eab il ity code

Note: In the even t the full Microc hip p art number c annot be marked on one lin e, it will

be carrie d ov er to th e nex t li ne th us l im itin g the num be r of av ail abl e characte rs

for customer specific information.

*Standard device marking consists of Microchip part number, year code, week code, and traceability

code.

MCRF200

XXX0025

NNN

 2003 Microchip Technology Inc. DS21219H-page 15

MCRF200

8-Lead Plastic Dual In-line (P) – 300 mil (PDIP)

UNITS INCHES* MILLIMETERS

DIMENSIO N LIM ITS MIN NOM MAX MIN NOM MAX

Number of Pins n88

Pitch p.100 2.54

Top to Seating Plane A .140 .155 .170 3.56 3.94 4.32

Molded Package Thickness A2 .115 .130 .145 2.92 3.30 3.68

Base to Seating Plane A1 .015 0.38

Shoulder to Shoulder W idth E .300 .313 .325 7.62 7.94 8.26

Molded Package Width E1 .240 .250 .260 6.10 6.35 6.60

Overall Length D .360 .373 .385 9.14 9.46 9.78

Tip to Seating Plane L .125 .130 .135 3.18 3.30 3.43

Lead Thickness c.008 .012 .015 0.20 0.29 0.38

Upper Lead Width B1 .045 .058 .070 1.14 1.46 1.78

Lower Lead Width B .014 .018 .022 0.36 0.46 0.56

Overall Row Spacing § eB .310 .370 .430 7.87 9.40 10.92

Mold Draft Angle Top α510 15 510 15

Mold Draft Angle Bottom β510 15 510 15

* Controlling Parameter

Notes:

Dimensions D and E1 do not include mold flash or protrusions. Mold flash or protrusions shall not exceed

JEDEC Equivalent: MS-001

Drawing No. C04-018

.010” (0.254mm) per side.

§ Significant Characteristic

MIN

MCRF200

DS21219H-page 16  2003 Microchip Technology Inc.

8-Lead Plastic Small Outline (SN) – Narrow, 150 mil (SOIC)

Foot A ngle φ04804 8

120

Mold Draft Angle Bottom 15

120

Mold Draft Angle Top .51

.42.33.020

.017.013BLead Width .25

.23.20.010

.009.008

Lead Thickness

.76

.62.48.030

.025.019LFoot Length .51

.38.25.020

.015.010hChamfer Distance 5.00

4.904.80.197

.193.189DOverall Length 3.99

3.913.71.157

.154.146E1Molded Pa ckag e Width 6.20

6.025.79.244

.237.228EOverall Width .25

.18.10.010

.007.004A1Standoff § 1.55

1.421.32.061

.056.052A2Molded Packag e Thickness 1.75

1.551.35.069

.061.053AOverall Height 1.27

.050

Pitch 88

Numb er of Pin s MAXNOMMINMAXNOMMINDIMENSION LIMITS MILLIMETERSINCHES*

UNITS

45°

* Controlling Parameter

Notes:

Dimensions D and E1 do not include mold flash or protrusions. Mold flash or protrusions shall not exceed

.010” (0.254mm) per side.

JEDEC Equivalent: MS-012

Drawing No. C04-057

§ Significant Characteristic

 2003 Microchip Technology Inc. DS21219H-page 17

MCRF200

1M/3M COB (IOA2)

5mm

8mm

Thickness = 0.4 mm

Antenna Coil Connecti on

MCRF200 COB

MCRF200

DS21219H-page 18  2003 Microchip Technology Inc.

NOTES:

 2003 Microchip Technology Inc. DS21219H-page 19

MCRF200

ON-LINE SUPPORT

Microchip provides on-line support on the Microchip

World Wide Web site.

The web site is used b y Micr ochip as a me ans to mak e

files and information easily available to customers. To

view t he site, the user must have acce ss to the In ternet

and a web browser, such as Netscape® or Microsoft®

Internet Explorer. Files are also available for FTP

download from our FTP site.

Connecting to the Microchip Internet

Web S ite

The Microchip web site is available at the following

URL:

www.microchip.com

The file transfer site is available by using an FTP

service to connect to:

ftp://ftp.microchip.com

The web site and file transfer site provide a variety of

services. Users may download files for the latest

Development Tools, Data Sheets, Application Notes,

User's Guides, Articles and Sample Programs. A vari-

ety of Microchip specific business information is also

available, including listings of Microchip sales offices,

distributors and factory representatives. Other data

available for consideration is:

• Latest Microchip Press Releases

• Technical Support Section with Frequently Asked

Questions

• Design Tips

• Device Errat a

• Job Postin gs

• Microchip Consultant Prog ram Member Listing

• Links to other useful web sites related to

Microchip Products

• Confere nces for prod ucts, Dev elopment Systems,

technical information and more

• Listing of seminars and events

SYSTEMS INFORMATION AND

UPGRADE HOT LINE

The Systems Information and Upgrade Line provides

system users a listing of the latest versions of all of

Microchip's development systems software products.

Plus, this line provides information on how customers

can receive the mo st current upgrade kits. The Hot Line

Numbe rs are:

1-800-755-2345 for U.S. and most of Canada, and

1-480-792-7302 for the rest of the world.

042003

MCRF200

DS21219H-page 20  2003 Microchip Technology Inc.

READER RESPONSE

It is ou r intentio n to provide you with the best docu menta tion possib le to e ns ure suc c es sfu l u se of y ou r Mic r oc hip pro d-

uct. If you wi sh to prov ide you r comment s on org anizatio n, clar ity, subj ect matte r , a nd ways in whic h our doc umenta tion

can better serve you, please FAX your comments to the Te chnical Publications Manager at (480) 792-4150.

Please list the following information, and use this outline to provide us with your comments about this document.

To: Technical Publications Manager

RE: Reader Response Total Pages Sent ________

From: Name

Company

Address

City / State / ZIP / Country

Telephone: (_______) _________ - _________

Application (optional):

Would you like a reply? Y N

Device: Literature Number:

Questions:

FAX: (______) _________ - _________

DS21219HMCRF200

1. What are the best features of this document?

2. How does this document meet your hardware and software development needs?

3. Do you find the organization of this document easy to follow? If not, why?

4. What additions to the document do you think would enhance the structure and subject?

5. What deletions from the document could be made without affecting the overall usefulness?

6. Is there any incorrect or misleading information (what and where)?

7. How would you improve this document?

 2003 Microchip Technology Inc. DS21219H-page 21

MCRF200

PRODUCT IDENTIFICATION SYSTEM

To order or obtain information, e.g., on pricing or delivery, refer to the factory or the listed sales office.

Sales and Support

PART NO. X/XX XXX

Configuration/SQTP codePackageTemperature

Range

Device

Device MCRF200 = 125 kHz Contactless Programmable MicroID™

tag, 96/128-bit

Temperatu re R ang e I = -40°C to +85°C (Industrial)

Package W F = Sawed waf er on fra me (7 mil backg rind )

W = Wafer (11 mil backgrind)

S = Dice in waffle pack

P = Plastic PDIP ( 300 mil Body) 8-lead

SN = Plastic SOIC (150 mil Body) 8-lead

1M = 0.40 mm (I0A2 package) COB Module w/1000 pF

capacitor

3M = 0.40 mm (I0A2 package) COB Module with 330

pF capacitor

Configuration Three-digit HEX val ue to be programmed into the configura -

tion register. Three HEX characters correspond to 12 binary

bits. These bits are programmed into the configuration

registe r MSB firs t (CB 12 , CB11...CB1). Refer to example.

SQTP Code An assigned custom, 3-digit code used for tracking and

controlling production and customer data files for factory

programming. In this case the configuration code is not

shown in the part number , but is captured in the SQTP

documentation.

Examples:

a) MCRF200-I/W00A = 125 kHz, industrial

temperature, wafer package, contactlessly

programmable, 96 bit, FSK Fc/8 Fc/10, direct

encoded, Fc/50 data return rate tag.

b) MCRF200-I/WFQ23 = 125 kHz, industrial

temperature, wafer sawn and mounted on

frame, factory programmed.

The configuration register is:

CB12 CB11 CB10 CB9 CB8 CB7 CB6 CB5 CB4 CB3 CB2 CB1

0 0 0 000001010

Data Sheets

Products supported by a preliminary Data Sheet may have an errata sheet describing minor operational differences and

recommended workarounds. To determine if an errata sheet exists for a particular device, please contact one of the following:

1. Your local Microc hip sales office

2. The Microchip Corporate Literature Center U.S. FAX: (480) 792-7277

3. The Microchip Worldwide Site (www.microchip.com)

Please specify which device, revision of silicon and Dat a Sheet (include Literature #) you are using.

New Customer Notification System

MCRF200

DS21219H-page 22  2003 Microchip Technology Inc.

NOTES:

 2003 Microchip Technology Inc. DS21219H-page 23

Information contained in this publication regarding device

applications and the like is intended through sug gestion only

and may be superseded by updates. It is your responsibility to

ensure that your application meets with your specifications.

No representation or warranty is given and no liability is

assumed by Microc hip Technology Incorporated with respect

to the accuracy or use of such inf orm ation, or inf ringement of

patents or other intellectual property rights arising from such

use or otherwise. Use of Microchip’ s products as critical com-

ponents in life support systems is not authorized except with

express written approval by Microchip. No licenses are con-

veyed, implicitly or otherwise, under any intellectual property

rights.

Trademarks

The Microchip name and logo, the Microchip logo, Accuron,

dsPIC, KEELOQ, MPLAB, PIC, PIC micro, PICSTART,

PRO MATE and PowerSmart are registered trademarks of

Microchip Technology Incorporat ed in the U.S.A. and other

countries.

AmpLab, FilterLab, microID, MX DEV, MXLAB, PICMAS TER,

SEEVAL, SmartShunt and The Embedded Control Solutions

Company are registered trademarks of Microchip Technology

Incorporated in the U.S.A.

Application Maestro, dsPICDEM, dsPICDE M. net,

dsPICwo rks, ECAN, ECONOMONITOR, FanSense,

FlexROM, fuzzyLAB , In-C ircuit Serial Programm ing, ICSP,

ICEPIC, microPor t, Migratable Memory, MPASM, MPLIB,

MPLINK, MPSIM, PICkit, PICDEM, PICDEM.net, PICtail,

PowerCal, PowerInfo, PowerMate, PowerTool, rfLAB, rfPIC,

Select Mode, SmartSensor, SmartTel and Total Endurance

are trademarks of Microchip Technology Incorporat ed in the

U.S.A. and other countries.

Serialized Quick Turn Programming (SQTP) is a service mark

of Microchip Technology Incorporated in the U.S.A.

All other trademarks mentioned herein are property of their

respective companies.

Printed on recycled paper.

Note the following details of the code protection feature on Microchip devices:

• Microchip products meet the specification contained in their particular Microchip Data Sheet.

• Microchip believes that its family of products is one of the most secure families of its kind on the market today, when used in the

intended manner and under normal conditions.

• There are dishonest and possibly illegal methods used to breach the code protection feature. All of these methods, to our

knowledge, require using the Microchip products in a manner outside the operating specifications contained in Microchip's Data

Sheets. Most likely, the person doing so is engaged in theft of intellectual property.

• Microchip is willing to work with the customer who is concerned about the integrity of their code.

• Neither Microchip nor any other semiconductor manufacturer can guarantee the security of their code. Code protection does not

mean that we are guaranteeing the product as “unbreakable.”

Code protection is constantly evolving. We at Microchip are committed to continuously impro ving the cod e protection features of our

products. Attempts to break microchip’s code protection feature may be a violation of the Digital Millennium Copyright Act. If such acts

allow unauthorized access to your software or other copyrighted work, you may have a right to sue for relief under that Act.

Mic ro chi p re cei v e d IS O/T S - 16 949 : 20 02 qu ality syste m cer t i fi c ati o n f or

its worldwide headquarters, design and wafer fabrication facilities in

Chandler and T empe, Arizona and Mountain View , California in October

2003 . The Company’s quality system processes and procedures are

for its PICmicro® 8-bit MCUs, KEELOQ® code hopping devices, Serial

EEPROMs, microperipherals, non-volatile memory and analog

products. In addition, Microchip’s quality system for the design and

manufacture of development systems is ISO 9001:2000 certified.

DS21219H-page 24  2003 Microchip Technology Inc.

AMERICAS

Corporate Office

2355 West Chandler Blvd.

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Tel : 480-7 92- 72 00

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Chicago

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Detroit

Tri-Atria Office Building

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11/24/03

WORLDWIDE SALES AND SERVICE