SIEMENS PZTA 42 NPN Silicon High Voltage Transistor High breakdown voltage e Low collector-emitter saturation voltage Complementary type: PZTA 92 (PNP) 1 VPS05163 Type Marking | Ordering Code Pin Configuration Package PZTA 42 PZTA 42 | Q62702-22035 1=B |2=C |3=E |[4=C |SOT-223 Maximum Ratings Parameter Symbol Value Unit Collector-emitter voltage VcEO 300 V Collector-base voltage VcoBo 300 Emitter-base voltage VERO 6 DC collector current Io 500 mA Base current lb 100 Total power dissipation, Tg = 124 C Prot 1.5 Ww Junction temperature 7; 150 C Storage temperature Tota -65 ... +150 Thermal Resistance Junction ambient 1) Panda <72 K/W Junction - soldering point Ainds <17 1) Package mounted on pcb 40mm x 40mm x 1.5mm / 6cem2 Cu Semiconductor Group 1 Jan-21-1999 SIEMENS PZTA 42 Electrical Characteristics at 7, = 25C, unless otherwise specified. Parameter Symbol Values min. typ. max. Unit DC Characteristics Collector-emitter breakdown voltage le = 1 mA, ip =0 ViBR)CEO 300 Collector-base breakdown voltage lco= 100 PA, Ip =0 ViBR)CBO 300 Emitter-base breakdown voltage fe= 100 HA, le= 0 ViBR)EBO Collector cutoff current Vop = 200 V, /e=0 IeBo 100 nA Collector cutoff current Vop = 200 V, /f-=0, Ta = 150C IcsBo 20 LA Emitter cutoff current Vep=S3V, lo =0 EBO 100 nA DC current gain 1) lo=1mA, Ver=10V le=10mMA, Veg = 10V lo=30mA, Veg = 10V Pre 25 40 40 Collector-emitter saturation voltage1) lo= 20 mA, lp= 2mA VoEsat 0.5 Base-emitter saturation voltage 1) lo= 20 mA, Ip= 2mA VBEsat 0.9 AC Characteristics Transition frequency lo= 20 mA, Veg = 10 V, f= 100 MHz 70 MHz Collector-base capacitance Vop = 20 V, f= 1 MHz pF 1) Pulse test: t< 300us;D < 2% Semiconductor Group Jan-21-1999 SIEMENS PZTA 42 Total power dissipation P,,= f(T"; 7s) * Package mounted on epoxy PITA 42/43 EHPOO?722 0.05 a0 100 C 150 ~ Isls Permissible pulse load Protmax / Ptotpc = F (ty) 3 PZTA 42/43 EHP00320 1G Prot max 5 Prot le | 107 5 0 | 2 5 So0o00000 0 G o Q 9 { 2 2 10) 10 6 2 0 1 10 1077 10 107% 5s 16 ~ ip Semiconductor Group Transition frequency # = f(/c) Voce = 10V, f= 100MHz a3 PZTA 42/43 EHPOO723 f MHz 104 5 iQ! 10 5 10! 5 107 ma 5 i103 mle DC current gain fre = f (lc) Voce = 10V At PZTA 42/43 EHPOO7 24 5 107 mA 10 5 10! Lo Jan-21-1999 SIEMENS PZTA 42 Collector cutoff current /cpo = f (Ta) Collector current io = f (Vee) Vop = 200V Vor = 10V 1 4 PZTA 42/43 EHPO0725 { 93 PZTA 42/43 EHPOQQ726 nA mA Le 10 ! Bo 5 102 5 107 5 10! 101 5 10 a 10 5 5 107 10717 Q 30 100 *C 150 Fn Semiconductor Group 4 Jan-21-1999