ABB Semiconductors AG reserves the right to change specifications without notice.
VSM = 4200 V
ITAVM = 1920 A
ITRMS = 3020 A
ITSM = 32000 A
VT0 =0.96V
rT= 0.285 mΩ
ΩΩ
Ω
Bi-Directional Control Thyristor
5STB 18N4200
Doc. No. 5SYA1040-03 Sep. 01
• Two thyristors integrated into one wafer
• Patented free-floating silicon technology
• Designed for traction, energy and industrial applications
• Optimum power handling capability
• Interdigitated amplifying gate.
The electrical and thermal data are valid for one thyristor half of the device.
Blocking
Part Number 5STB 18N4200 5STB 18N4000 5STB 18N3600 Conditions
VSM 4200 V 4000 V 3600 V f = 5 Hz, tp = 10ms
VRM 4200 V 4000 V 3600 V f = 50 Hz,tp = 10ms
ISM ≤ 400 mA VSM
IRM ≤ 400 mA VRM Tj = 125°C
dV/dtcrit 1000 V/µs @ Exp. to 0.67xVSM
VRM is equal to VSM up to Tj = 110°C
Mechanical data
FMMounting force nom. 90 kN
min. 81 kN
max. 108 kN
aAcceleration
Device unclamped
Device clamped
50
100
m/s2
m/s2
mWeight 2.9kg
DSSurface creepage distance 53 mm
DaAir strike distance 22 mm
5STB 18N4200
ABB Semiconductors AG reserves the right to change specifications without notice.
Doc. No. 5SYA1040-03 Sep. 01 page 2 of 5
On-state
ITAVM Max. average on-state
t
1920 A Half sine wave, TC = 70°C
ITRMS Max. RMS on-state current 3020 A
ITSM Max. peak non-repetitive 32000 A tp = 10 ms T
j
= 125°C
surge current 35000 A tp = 8.3 ms After surge:
I2t Limiting load integral 5120 kA2stp= 10msV
D = VR = 0V
5000 kA2stp= 8.3ms
VTOn-state voltage 1.53 V IT= 2000 A
VT0 Threshold voltage 0.96 V IT= 1000 - 3000 A T
j
= 125°C
rTSlope resistance 0.285 mΩ
IHHolding current 50-250 mA Tj= 25°C
25-150 mA Tj= 125°C
ILLatching current 100-500 mA Tj= 25°C
50-300 mA Tj= 125°C
Switching
di/dtcrit Critical rate of rise of on-state 250 A/µs Cont. f = 50 Hz VD ≤ 0.67⋅VDRM , Tj = 125°C
current 500 A/µs ITRM = 3000 A60 sec.
f = 50Hz IFG = 2 A, tr = 0.5 µs
tdDelay time ≤3.0 µs VD = 0.4⋅VDRM IFG = 2 A, tr = 0.5 µs
tqTurn-off time ≤550 µs VD ≤ 0.67⋅VDRM ITRM = 3000 A, Tj = 125°C
dvD/dt = 20V/µs VR > 200 V, diT/dt = -1.5 A/µs
Qrr Recovery charge min 2100 µAs
max 3200 µAs
Triggering
VGT Gate trigger voltage ≤2.6 V Tj = 25°C
IGT Gate trigger current ≤400 mA Tj = 25°C
VGD Gate non-trigger voltage ≥0.3 V VD = 0.4⋅VRM Tj = 125°C
IGD Gate non-trigger current ≥10 mA VD = 0.4⋅VRM Tj = 125°C
VFGM Peak forward gate voltage 12 V
IFGM Peak forward gate current 10 A
VRGM Peak reverse gate voltage 10 V
PGMaximum gate power loss 3 W
5STB 18N4200
ABB Semiconductors AG reserves the right to change specifications without notice.
Doc. No. 5SYA1040-03 Sep. 01 page 3 of 5
Thermal
TjOperating junction temperature range -40…125 °C
Tstg Storage temperature range -40…150 °C
RthJC Thermal resistance 22.8 K/kW Anode side cooled
junction to case 22.8 K/kW Cathode side cooled
11.4 K/kW Double side cooled
RthCH Thermal resistance case to 4 K/kW Single side cooled
heat sink 2 K/kW Double side cooled
Analytical function for transient thermal
impedance:
)e-(1R = (t)Z
n
1i
t/-
ithJC i
å
=
τ
i1234
Ri(K/kW) 6.77 2.51 1.34 0.78
τi(s) 0.8651 0.1558 0.0212 0.0075
0.001 0.010 0.100 1.000 10.00
0
t[s]
0
5
10
15
Z
thJC
[K/kW]
BN1
180° sine: add 1 K/kW
180° rectangular: add 1 K/kW
120° rectangular: add 1K/kW
60° rectangular:
add
2
K/kW
F
m
=81..108 kN
Double-side cooling
Fig. 1 Transient thermal impedance junction to case.
Fig. 2 On-state characteristics. Fig. 3 On-state characteristics.
5STB 18N4200
ABB Semiconductors AG reserves the right to change specifications without notice.
Doc. No. 5SYA1040-03 Sep. 01 page 4 of 5
0 500 1000 1500 2000 2500 3000
I
T
A
V
(
A
)
70
75
80
85
90
95
100
105
110
115
120
125
130
T
case
(°C)
DC
180°
rectangular
180°
sine
120°
rectangular
5STB
18N4200
Double-sided
cooling
Fig. 4 On-state power dissipation vs. mean on-
state current. Turn - on losses excluded.
Fig. 5 Max. permissible case temperature vs.
mean on-state current.
Fig. 6 Surge on-state current vs. pulse length.
Half-sine wave.
Fig. 7 Surge on-state current vs. number of
pulses. Half-sine wave, 10 ms, 50Hz.
5STB 18N4200
ABB Semiconductors AG reserves the right to change specifications without notice.
ABB Semiconductors AG Doc. No. 5SYA1040-03 Sep. 01
Fabrikstrasse 3
CH-5600 Lenzburg, Switzerland
Telephone +41 (0)62 888 6419
Fax +41 (0)62 888 6306
Email abbsem@ch.abb.com
Internet www.abbsem.com
Fig. 8 Gate trigger characteristics. Fig. 9 Max. peak gate power loss.
Fig. 10 Recovery charge vs. decay rate of on-
state current.
Fig. 11 Peak reverse recovery current vs. decay
rate of on-state current.
