IXA40RG1200DHGLB
tentative
Boost Topology
ISOPLUS™ Surface Mount Power Device
XPT IGBT
XPT IGBT
7
9
8
1
3
2
BD
FWD
VDD
Part number
IXA40RG1200DHGLB
Backside: isolated
C25
CE(sat)
VV1.8
CES
61
1200
=
V= V
I= A
Features / Advantages: Applications: Package:
● XPT IGBT
- low saturation voltage
- positive temperature coefficient
for easy paralleling
- fast switching
- short tail current for optimized
performance in resonant circuits
● Sonic™ diode
- fast reverse recovery
- low operating forward voltage
- low leakage current
- low temperature dependency of
reverse recovery
● Vcesat detection diode (VDD)
- integrated into package
- very fast diode
● AC drives
- brake chopper
● PFC
- boost chopper
● Switched reluctance drives
SMPD
● Industry convenient outline
● RoHS compliant
● Epoxy meets UL 94V-0
● Soldering pins for PCB mounting
● Backside: DCB ceramic
● Reduced weight
● Advanced power cycling
● Isolation Voltage: 3000 V~
IXYS reserves the right to change limits, conditions and dimensions. 20120618Data according to IEC 60747and per semiconductor unless otherwise specified
© 2012 IXYS all rights reserved
IXA40RG1200DHGLB
tentative
V = V
Symbol Definition typ. max.
I
R
V
V
F
2.20
R/D
min.
2T = 25°C
VJ
T = °C
VJ
m
A
0.03V = V
R/D
T = 25°C
VJ
I = A
F
1
1200
reverse current, drain current
forward voltage drop
Conditions Uni
t
125
V
F0
V
1.30T = °C
VJ
150
r
F
390 m
Ω
V
1.80T = °C
VJ
I = A
F
1
threshold voltage
slope resistance for power loss calculation only
µ
A
125
V
RRM
V
1200
max. re pe titive re verse b l ocking volta ge T = 25°C
VJ
C
J
tbd
j
unction capacitance V = V;400 T = 25°C
f = 1 MHz
RVJ
p
F
1200
n
s
2.3
A
T
VJ
=°C
reverse recovery time
A
tbd
40
tbd
n
s
I
RM
max. reverse recovery current 25
T=125°C
VJ
t
rr
T
VJ
=°C25
T=125°C
VJ
Ratings
VCEsat Detection Diode VDD
V = V;
100
R
-di/dt = A/µs
100
I = A
F
1
V = V
Symbol Definition
Ratings
typ. max.
I
R
V
I
A
V
F
2.20
R1K/
W
R
min.
25
V
RSM
V
30T = 25°C
VJ
T = °C
VJ
m
A
0.5V = V
R
T = 25°C
VJ
I = A
F
V
T = °C
C
80
P
tot
125
W
T = 25°C
C
RK/
W
0.30
30
1200
max. non-repetitive reverse blocking voltage
reverse current, drain current
forward voltage drop
total power dissipation
Conditions Uni
t
T = 25°C
VJ
125
V
F0
V
1.26T = °C
VJ
150
r
F
28 m
Ω
V
2.20T = °C
VJ
I = A
F
V
30
I = A
F
60
I = A
F
60
threshold voltage
slope resistance for power loss calculation only
µ
A
125
V
RRM
V
1200
max. re pe titive re verse b l ocking volta ge T = 25°C
VJ
C
J
13
j
unction capacitance V = V400 T = 25°Cf = 1 MHz
RVJ
p
F
I
FSM
t = 10 ms; (50 Hz), sine; T = 45°C
VJ
max. forward surge current V = 0 V
R
T = °C
VJ
150
200
A
1200
FAV
d =rectangular 0.5
average forward current
thermal resistance junction to case
thJC
thermal resistance case to heatsink
thCH
Free Wheeling Diode FWD
1200
IXYS reserves the right to change limits, conditions and dimensions. 20120618Data according to IEC 60747and per semiconductor unless otherwise specified
© 2012 IXYS all rights reserved
IXA40RG1200DHGLB
tentative
-di /dt = A/µs
T = 125°C
V
CES
V1200
collector emitter voltage
collector emitter saturation voltage
T = 25°C
collect or current A
61
A
C
VJ
Symbol Definition
Ratings
typ. max.min.Conditions Unit
43
V
V
CE(sat)
total power dissipation 215 W
collector emitter leakage current
6.5 V
turn-on delay time 70 ns
t
reverse bias safe operating area
A
V
GES
V±20
V
GEM
max. transient co l l e c to r ga te voltage
T = °C
C
V
P
tot
gate emitter threshold voltage
RBSOA
105
±30
T = 125°C
T = 125°C
VJ
V
max. DC gate voltage
I
C25
I
C
T = 25°C
VJ
I = A; V = 15 V
CGE
T = 25°C
VJ
V
GE(th)
I
CES
I = mA; V = V
CGECE
V = V ; V = 0 V
CE CES GE
I
GES
T = 25°C
VJ
gate emitter leakage current V = ±20 V
GE
2.1
2.1
5.95.4
mA
0.1 mA
0.1
nA
500
G(on)
total gate charge V = V; V = 15 V; I = A
CE
Q
GE C
107 nC
t
t
t
E
E
d(on)
r
d(off)
f
on
off
40 ns
250 ns
100 ns
3.8 mJ
4.1 mJ
current rise time
turn-off delay time
current fall time
turn-on energy per pulse
turn-off energy per pulse
inductive load
V = V; I = A
V = ±15 V; R = Ω
CE C
GE G
V = ±15 V; R = Ω
GE G
V = V
CEmax
1200
short circuit safe operating area
µs
SCSOA
10T = 125°C
VJ
V = V; V = ±15 V
CE GE
short circuit duration
t
short circuit current
I
SC
SC
R = Ω; non-repetitive
G
140 A
R
thJC
thermal resistance junction to case 0.58 K/W
V
RRM
V1200
max. repetitive rev ers e voltage T = 25°C
VJ
T = 25°C
forward current A
48
A
C
32T = °C
C
I
F25
I
F
T = 25°C
forward voltage V
2.20
V
VJ
1.90T = 125°C
VJ
V
F
I = A
F
T = 25°C
reverse current mA
0.03
mA
VJ
0.15T = 125°C
VJ
I
RR RRM
T = 125°C
VJ
Q
I
t
rr
RM
rr
3.5 µC
30 A
350 ns
reverse recovery charge
max. reverse recovery current
reverse recovery time
V =
I = A; V = 0 V
F
FGE
E
rec
0.9 mJ
reverse recovery energy
R
R
thJC
thermal resistance junction to case 1K/W
V = V
T = 25°C
C
T = 25°C
VJ
T = 125°C
VJ
VJ
35
1.5
35
35
30
30
27
27
27
600
900
600
600
I
CM
1.8
R
thCH
thermal resistance case to heatsink 0.17 K/W
R
thCH
thermal resistance case to heatsink 0.3 K/W
Boost IGBT
Boost Diode BD
600 V
V = V
CEmax
1200
80
80
80
80
IXYS reserves the right to change limits, conditions and dimensions. 20120618Data according to IEC 60747and per semiconductor unless otherwise specified
© 2012 IXYS all rights reserved
IXA40RG1200DHGLB
tentative
Ratings
XXXXXXXXXX
yywwA
Part number
Date code
Backside DCB
Pin 1 identifier
U
L Logo
Data Matrix Code
Digits
1 to 19: Part #
20 to 23: Date Code
24 to 25: Assembly line
26 to 31: Lot #
32: Split Lot
33 to 36: Individual #
~ ~ ~
Assembly line
I
X
A
40
RG
1200
H
G
D
LB
Part number
IGBT
XPT IGBT
Gen 1 / std
boost configuration
IGBT
XPT IGBT
Gen 1 / std
SMPD-B
=
=
=
=
=
=
IXA30RG1200DHGLB SMPD-B 1200
Current Rating [A]
Reverse Voltage [V]
=
=
=
=
Package
T
VJ
°C
T
stg
°C150
storage temperature -55
Weight g8.5
Symbol Definition typ. max.min.Conditions
virt ua l j un ction temp e r ature
Unit
F
C
N130
mount ing force with clip 40
V
ISOL
V
t = 1 second
V
t = 1 minute
isolation voltage
mm
mm
1.6
4.0
d
Spp/App
creepage distance on surface | striking distance through air
d
Spb/Apb
terminal to backside
I
RMS
RMS current 100 A
per terminal
150-55
terminal to terminal
SMPD
IXA40RG1200DHGLB-TRR Tape & Reel 200 511661IXA40RG1200DHGLB
Similar Part Package Voltage class
IXA20RG1200DHGLB SMPD-B 1200
Delivery Mode Quantity Code No.Part Number Marking on Product
Alternative
Ordering
50/60 Hz, RMS; I ≤ 1 mA
ISOL
IXA40RG1200DHGLB 512363Blister 45IXA40RG1200DHGLBStandard
2500
3000
IXYS reserves the right to change limits, conditions and dimensions. 20120618Data according to IEC 60747and per semiconductor unless otherwise specified
© 2012 IXYS all rights reserved
IXA40RG1200DHGLB
tentative
1
23
654
987
32,7
`
0,5
2
`
0,05
(3x)
18
`
0,1
2,75
`
0,1
5,5
`
0,1
13,5
`
0,1
16,25
`
0,1
19
`
0,1
25
`
0,2
0,5
`
0,1
9
`
0,1
23
`
0,2
1
`
0,05
(6x)
5,5
`
0,1
2)
2)
1)
A
0,55
`
0,1
4
`
0,05
4,85
`
0,2
2
`
0,2
c
0,05
3)
A(8:1)
0
0,15
+
2°
c
0,1
seating plane
Pin number
Notes:
1) potrusion may add 0.2 mm max. on each side
2) additional max. 0.05 mm per side by punching misalignement
or overlap of dam bar or bending compression
3) DCB area 10 to 50 µm convex;
position of DCB area in relation to plastic rim: ±25 µm
(measured 2 mm from Cu rim)
4) terminal plating: 0.2 - 1 µm Ni + 10 - 25 µm Sn (gal v.)
cutting edges may be partially free of plating
7
9
8
1
3
2
BD
FWD
VDD
Outlines SMPD
IXYS reserves the right to change limits, conditions and dimensions. 20120618Data according to IEC 60747and per semiconductor unless otherwise specified
© 2012 IXYS all rights reserved
IXA40RG1200DHGLB
tentative
0123
0
10
20
30
40
50
60
70
0 1020304050607080
0
2
4
6
8
10
012345
0
10
20
30
40
50
60
70
V
CE
[V]
I
C
[A]
Q
G
[nC]
V
GE
[V]
9V
11 V
5 6 7 8 9 10111213
0
10
20
30
40
50
60
70
020406080100120140
0
5
10
15
20
13 V
20 30 40 50 60 70
3
4
5
6
E
[mJ]
Eoff
Fig. 1 Typ. output characteristics
V
CE
[V]
I
C
[A]
V
GE
=15V
17 V
19 V
Fig. 2 Typ. output characteristics
I
C
[A]
Fig. 3 Typ. tranfer characteristics
V
GE
[V]
Fig. 4 Typ. turn-on gate charge Fig. 5 Typ. switching energy
versus collector current
Eon
Fig. 6 Typ. switching energy
versus gate resistance
R
G
[W]
E
[mJ]
I
C
[A]
Fig. 7 Typ. transient thermal impedance junction to case
V
GE
=15V
T
VJ
=25°C
T
VJ
=125°C
T
VJ
=125°C
T
VJ
= 125°C
T
VJ
=25°C
IC=25A
VCE =600V
VGE =±15V
TVJ = 125°C
RG=39
VCE =600V
VGE =±15V
TVJ =125°C
Eon
Eoff
IC=35A
VCE = 600 V
Boost IGBT
IXYS reserves the right to change limits, conditions and dimensions. 20120618Data according to IEC 60747and per semiconductor unless otherwise specified
© 2012 IXYS all rights reserved
IXA40RG1200DHGLB
tentative
400 600 800 1000
1
2
3
4
5
6
0.0 0.5 1.0 1.5 2.0 2.5 3.0
0
10
20
30
40
50
60
Q
rr
[μC]
I
F
[A]
V
F
id]V[
F
/dt [A/μs]
15 A
30 A
60 A
Fig. 1 Typ. Forward current
versus V
F
Fig. 2 Typ. reverse recov.charge
Q
rr
versus di/dt
400 600 800 1000
10
20
30
40
50
60
70
[A]
di
F
/dt [A/μs]
15 A
30 A
60 A
Fig. 3 Typ. peak reverse current
I
RM
versus di/dt
400 600 800 1000
100
200
300
400
500
600
700
t
rr
[ns]
di
F
/dt [A/μs]
15 A
30 A
60 A
Fig. 5 Typ. recovery time
t
rr
versus di/dt
Fig. 6 Typ. recovery energy
E
rec
versus di/dt
400 600 800 1000
0.4
0.6
0.8
1.0
1.2
1.4
1.6
E
rec
[mJ]
di
F
/dt [A/μs]
15 A
30 A
60 A
Fig. 4 Dynamic parameters
Q
rr
,I
RM
versus di/dt
Fi
g
.7 T
yp
. transient thermal im
p
edance
j
unction to case
TVJ =125°C
TVJ =25°C TVJ = 125°C
VR=600V
TVJ =125°C
VR=600V
TVJ =125°C
VR= 600 V
TVJ = 125°C
VR=600V
Boost Diode BD
IXYS reserves the right to change limits, conditions and dimensions. 20120618Data according to IEC 60747and per semiconductor unless otherwise specified
© 2012 IXYS all rights reserved
